Claims
- 1. A method of forming a magnetoresistive sensor comprising:
- depositing a magnetoresistive layer upon a substrate;
- depositing a spacer layer upon the magnetoresistive layer;
- depositing a soft adjacent layer upon the spacer layer;
- depositing a photoresist layer upon a central region of the soft adjacent layer, the photoresist layer defining a central region in each of the soft adjacent layer, the spacer layer, and the magnetoresistive layer, the photoresist layer also at least partially defining first and second outer regions in each of the soft adjacent layer, the spacer layer, and the magnetoresistive layer;
- removing the first and second outer regions in each of the soft adjacent layer and the spacer layer;
- depositing permanent magnet material upon the first and second outer regions of the magnetoresistive layer and upon the photoresist layer, the permanent magnet material deposited upon the first and second outer regions of the magnetoresistive layer forming first and second permanent magnets; and
- removing the photoresist layer and thereby removing the permanent magnet material deposited upon the photoresist layer, the permanent magnets remaining on the first and second outer regions of the magnetoresistive layer each having a surface which is essentially coplanar with a surface of the soft adjacent layer.
- 2. The method of claim 1 further comprising:
- sputter etching a surface of each of the first and second outer regions of the magnetoresistive layer to provide a clean surface on each of the first and second outer regions for depositing the permanent magnet material thereon.
Parent Case Info
This is a divisional of U.S. patent application Ser. No. 08/380,820, filed Jan. 30, 1995, U.S. Pat. No. 5,495,378. Priority of the prior application is claimed pursuant to 35 USC 120.
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Divisions (1)
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Number |
Date |
Country |
Parent |
380820 |
Jan 1995 |
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