Claims
- 1. A single crystal monolithic sensor comprising:a single crystal substrate; a doped microstructure made from the, single crystal and movably supported by but electrically isolated from the substrate for sensing a condition; and circuitry formed on the substrate and coupled to the doped microstructure for resolving a signal based on the sensed condition.
- 2. The monolithic sensor as claimed in claim 1 wherein the circuitry includes bipolar circuit elements.
- 3. m The monolithic sensor as claimed in claim 1 wherein the circuitry includes MOS circuit elements.
- 4. The monolithic sensor as claimed in claim 1 wherein the circuitry includes both MOS and bipolar circuit elements.
- 5. The monolithic sensor as claimed in claim 1 wherein the single crystal is a single crystal semiconductor.
- 6. The monolithic sensor as claimed in claim 5 wherein the semiconductor is silicon.
- 7. The monolithic sensor as claimed in claim 1 wherein the doped microstructure is a resonator.
- 8. The monolithic sensor as claimed in claim 1 further comprising an electrically isolating diode between the doped microstructure and the substrate to electrically isolate the doped microstructure from the substrate.
CROSS-REFERENCE TO RELATED APPLICATION
This is a divisional of copending application(s) Ser. No. 09/325,204 filed on Jun. 3, 1999 now U.S. Pat. No. 6,136,630.
This application is based on and claims benefit of U.S. Provisional Patent Application Ser. No. 60/087,986, filed Jun. 4, 1998 and entitled “Merged Circuit And Micromechanics Process For Thick Single Crystal Si Micromechanics.”
GOVERNMENT RIGHTS
This invention was made with government support under Contract No. DABT 63-C0111, awarded by the Defense Advanced Research Projects Agency (DARPA). The government has rights in the invention.
US Referenced Citations (9)
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/087986 |
Jun 1998 |
US |