Claims
- 1. A method of making a thin film silicon alloy photovoltaic panel comprising the steps of:
- providing a substantially continuous web of flexible substrate material, said substrate material comprising a support layer having at least one substantially planar deposition surface with a layer of electrically insulating material thereupon;
- providing one or more electrode-forming regions upon the layer of insulating material;
- providing at least three discrete deposition chambers, each chamber including glow discharge means for the deposition of a discrete layer of thin film silicon alloy material; the conductivity type of the layer of silicon alloy material deposited in each chamber differing from one another;
- substantially continuously feeding said web of substrate material through each of the deposition chambers;
- introducing a plurality of reaction gases into each of the deposition chambers;
- providing means between adjacent deposition chambers for isolating the reaction gases in each chamber from one another;
- activating the glow discharge deposition means for disassociating said reaction gases and depositing a successive layer of silicon alloy material in each of the deposition chambers, said layers of silicon alloy material forming a photovoltaic region; and
- forming a thin, flexible electrode layer on said last deposited layer of silicon alloy material.
Parent Case Info
This is a division of application Ser. No. 750,444 filed July 1, 1985, now abandoned, which is a division of application Ser. No. 653,019 filed Sept. 21, 1984, now abandoned, which is a division of application Ser. No. 402,115 filed July 26, 1982, now abandoned, which is a division of application Ser. No. 151,301 filed May 19, 1980, now U.S. Pat. No. 4,400,409 issued Aug. 23, 1983.
US Referenced Citations (3)
Divisions (4)
|
Number |
Date |
Country |
Parent |
750444 |
Jul 1985 |
|
Parent |
653019 |
Sep 1984 |
|
Parent |
402115 |
Jul 1982 |
|
Parent |
151301 |
May 1980 |
|