Claims
- 1. The method for fabricating a semiconductor waveguide, comprising:
- providing a semiconductor substrate having a low or intrinsic level of dopant impurities;
- forming a first layer of semiconductor material over one surface of the semiconductor substrate to a predetermined thickness;
- forming a second layer of semiconductor material on the upper surface of the first layer of semiconductor material;
- etching the second layer of semiconductor material to form at least one ridge that functions as an optical waveguide and having at least a lower surface adjacent the upper surface of the first layer of semiconductor material;
- porifying the first layer of semiconductor material; and
- converting the first layer of semiconductor material to silicon dioxide.
RELATED APPLICATIONS
This is a continuation of application Ser. No. 07/326,104 filed Mar. 20, 1989 and entitled "INTEGRATED CIRCUIT WAVEGUIDE", now U.S. Pat. No. 4,927,781.
US Referenced Citations (8)
Foreign Referenced Citations (4)
Number |
Date |
Country |
0020678 |
Feb 1979 |
JPX |
0149749 |
Sep 1982 |
JPX |
0077240 |
May 1983 |
JPX |
0192344 |
Nov 1983 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
326104 |
Mar 1989 |
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