Differential oxidation and etching

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CPC
Y10S438/911

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/911Differential oxidation and etching

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Patents Grantslast 30 patents

Information Patent Grant
Integration of a memory transistor into high-K, metal gate CMOS pro...
- Patent number 8,883,624
- Issue date Nov 11, 2014
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of selective nitridation
- Patent number 7,972,933
- Issue date Jul 5, 2011
- Applied Materials, Inc.
- Christopher S. Olsen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Device comprising a field of tips used in biotechnology applications
- Patent number 7,915,176
- Issue date Mar 29, 2011
- STMicroelectronics Crolles 2 SAS
- Olivier De Sagazan
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Refurbishing a wafer having a low-k dielectric layer
- Patent number 7,695,982
- Issue date Apr 13, 2010
- Applied Matreials, Inc.
- Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture thereof
- Patent number 7,425,480
- Issue date Sep 16, 2008
- Kabushiki Kaisha Tohisba
- Yoshio Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture thereof
- Patent number 7,312,138
- Issue date Dec 25, 2007
- Kabushiki Kaisha Toshiba
- Yoshio Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device using an oxidation p...
- Patent number 7,303,946
- Issue date Dec 4, 2007
- Kabushiki Kaisha Toshiba
- Yoshio Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned mask formed utilizing differential oxidation rates of...
- Patent number 7,288,827
- Issue date Oct 30, 2007
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectively deposited silicon oxide layers on a silicon substrate
- Patent number 7,214,979
- Issue date May 8, 2007
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Refreshing wafers having low-k dielectric materials
- Patent number 7,208,325
- Issue date Apr 24, 2007
- Applied Materials, Inc.
- Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas chemistry cycling to achieve high aspect ratio gapfill with HDP...
- Patent number 7,052,552
- Issue date May 30, 2006
- Applied Materials
- Michael Kwan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deliberate semiconductor film variation to compensate for radial pr...
- Patent number 6,919,277
- Issue date Jul 19, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Radiation hardening method for shallow trench isolation in CMOS
- Patent number 6,890,832
- Issue date May 10, 2005
- Aeroflex UTMC Microelectronic Systems, Inc.
- David B. Kerwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned mask formed utilizing differential oxidation rates of...
- Patent number 6,844,225
- Issue date Jan 18, 2005
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of simultaneously implementing differential gate oxide thick...
- Patent number 6,784,115
- Issue date Aug 31, 2004
- Mosel Vitelic, Inc.
- Cheng-Tsung Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 6,777,333
- Issue date Aug 17, 2004
- Matsushita Electric Industrial Co., Ltd.
- Masahiro Joei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning a layer of magnetic material
- Patent number 6,759,263
- Issue date Jul 6, 2004
- Chentsau Ying
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deliberate semiconductor film variation to compensate for radial pr...
- Patent number 6,716,647
- Issue date Apr 6, 2004
- International Business Machines Corporation
- Toshiharu Furukawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Use of selective ozone teos oxide to create variable thickness laye...
- Patent number 6,617,230
- Issue date Sep 9, 2003
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing internal surfaces of a chemical vapor depositi...
- Patent number 6,610,211
- Issue date Aug 26, 2003
- Micron Technology, Inc.
- F. Daniel Gealy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing magnetoresistance head
- Patent number 6,605,414
- Issue date Aug 12, 2003
- Fujitsu Limtied
- Keiji Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for controlling the oxidation of implanted silicon
- Patent number 6,555,484
- Issue date Apr 29, 2003
- Cypress Semiconductor Corp.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing polysilicon stringer in memory device
- Patent number 6,455,440
- Issue date Sep 24, 2002
- Macronix International Co., Ltd.
- Pei-Ren Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of selective ozone TEOS oxide to create variable thickness laye...
- Patent number 6,368,986
- Issue date Apr 9, 2002
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deliberate semiconductor film variation to compensate for radial pr...
- Patent number 6,344,416
- Issue date Feb 5, 2002
- International Business Machines Corporation
- Toshiharu Furukawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Gas chemistry cycling to achieve high aspect ratio gapfill with HDP...
- Patent number 6,335,288
- Issue date Jan 1, 2002
- Applied Materials, Inc.
- Michael Kwan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure for a MOS transistor
- Patent number 6,239,478
- Issue date May 29, 2001
- Infineon Technologies AG
- Martin Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of generating multiple oxide thicknesses by one oxidation st...
- Patent number 6,225,167
- Issue date May 1, 2001
- Taiwan Semiconductor Manufacturing Company
- Mo-Chiun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multiple contact sizes
- Patent number 6,211,058
- Issue date Apr 3, 2001
- Advanced Micro Devices, Inc.
- John Jianshi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming trench isolation with high integrity, ultra thin...
- Patent number 6,087,243
- Issue date Jul 11, 2000
- Advanced Micro Devices, Inc.
- Larry Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE COMPRISING A FIELD OF TIPS USED IN BIOTECHNOLOGY APPLICATIONS
- Publication number 20110111448
- Publication date May 12, 2011
- STMicroelectronics (Crolles 2) SAS
- Olivier De Sagazan
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
METHOD OF SELECTIVE NITRIDATION
- Publication number 20100248435
- Publication date Sep 30, 2010
- Applied Materials, Inc.
- CHRISTOPHER S. OLSEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacture thereof
- Publication number 20070218605
- Publication date Sep 20, 2007
- Kabushiki Kaisha Toshiba
- Yoshio Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacture thereof
- Publication number 20070218606
- Publication date Sep 20, 2007
- Kabushiki Kaisha Toshiba
- Yoshio Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVING A LOW-K DIELECTRIC LAYER FROM A WAFER BY CHEMICAL MECHANIC...
- Publication number 20070190791
- Publication date Aug 16, 2007
- APPLIED MATERIALS, INC.
- Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVING A LOW-K DIELECTRIC LAYER FROM A WAFER
- Publication number 20070190798
- Publication date Aug 16, 2007
- APPLIED MATERIALS, INC.
- Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINE GRINDING A LOW-K DIELECTRIC LAYER OFF A WAFER
- Publication number 20070190790
- Publication date Aug 16, 2007
- APPLIED MATERIALS, INC.
- Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REFURBISHING A WAFER HAVING A LOW-K DIELECTRIC LAYER
- Publication number 20070190799
- Publication date Aug 16, 2007
- APPLIED MATERIALS, INC.
- Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device comprising a field of tips used in biotechnology applications
- Publication number 20070020786
- Publication date Jan 25, 2007
- STMicroelectronics CROLLES 2 SAS
- Olivier De Sagazan
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Refreshing wafers having low-k dielectric materials
- Publication number 20060160364
- Publication date Jul 20, 2006
- APPLIED MATERIALS, INC.
- Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned mask formed utilizing differential oxidation rates of...
- Publication number 20050079726
- Publication date Apr 14, 2005
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selectively deposited silicon oxide layers on a silicon substrate
- Publication number 20050035418
- Publication date Feb 17, 2005
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned mask formed utilizing differential oxidation rates of...
- Publication number 20040137670
- Publication date Jul 15, 2004
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DELIBERATE SEMICONDUCTOR FILM VARIATION TO COMPENSATE FOR RADIAL PR...
- Publication number 20040127060
- Publication date Jul 1, 2004
- International Business Machines Corporation
- Toshiharu Furukawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20040048462
- Publication date Mar 11, 2004
- Masahiro Joei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of patterning a layer of magnetic material
- Publication number 20040043526
- Publication date Mar 4, 2004
- APPLIED MATERIALS, INC.
- Chentsau Ying
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING MAGNETORESISTANCE HEAD
- Publication number 20020110756
- Publication date Aug 15, 2002
- KEIJI WATANABE
- G11 - INFORMATION STORAGE
Information Patent Application
Use of selective ozone TEOS oxide to create variable thickness laye...
- Publication number 20020098633
- Publication date Jul 25, 2002
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deliberate semiconductor film variation to compensate for radial pr...
- Publication number 20020045357
- Publication date Apr 18, 2002
- Toshiharu Furukawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Gas chemistry cycling to achieve high aspect ratio gapfill with HDP...
- Publication number 20020040764
- Publication date Apr 11, 2002
- Applied Materials, Inc.
- Michael Kwan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Use of selective ozone teos oxide to create variable thickness laye...
- Publication number 20020025666
- Publication date Feb 28, 2002
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS

Differential oxidation and etching

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integration of a memory transistor into high-K, metal gate CMOS pro...

Method of selective nitridation

Device comprising a field of tips used in biotechnology applications

Refurbishing a wafer having a low-k dielectric layer

Semiconductor device and method of manufacture thereof

Semiconductor device and method of manufacture thereof

Method of manufacturing a semiconductor device using an oxidation p...

Self-aligned mask formed utilizing differential oxidation rates of...

Selectively deposited silicon oxide layers on a silicon substrate

Refreshing wafers having low-k dielectric materials

Gas chemistry cycling to achieve high aspect ratio gapfill with HDP...

Deliberate semiconductor film variation to compensate for radial pr...

Radiation hardening method for shallow trench isolation in CMOS

Self-aligned mask formed utilizing differential oxidation rates of...

Method of simultaneously implementing differential gate oxide thick...

Method for fabricating semiconductor device

Method of patterning a layer of magnetic material

Deliberate semiconductor film variation to compensate for radial pr...

Use of selective ozone teos oxide to create variable thickness laye...

Method of processing internal surfaces of a chemical vapor depositi...

Method for manufacturing magnetoresistance head

Method for controlling the oxidation of implanted silicon

Method for preventing polysilicon stringer in memory device

Use of selective ozone TEOS oxide to create variable thickness laye...

Deliberate semiconductor film variation to compensate for radial pr...

Gas chemistry cycling to achieve high aspect ratio gapfill with HDP...

Semiconductor structure for a MOS transistor

Method of generating multiple oxide thicknesses by one oxidation st...

Semiconductor device with multiple contact sizes

Method of forming trench isolation with high integrity, ultra thin...

Patents Applicationslast 30 patents

DEVICE COMPRISING A FIELD OF TIPS USED IN BIOTECHNOLOGY APPLICATIONS

METHOD OF SELECTIVE NITRIDATION

Semiconductor device and method of manufacture thereof

Semiconductor device and method of manufacture thereof

REMOVING A LOW-K DIELECTRIC LAYER FROM A WAFER BY CHEMICAL MECHANIC...

REMOVING A LOW-K DIELECTRIC LAYER FROM A WAFER

FINE GRINDING A LOW-K DIELECTRIC LAYER OFF A WAFER

REFURBISHING A WAFER HAVING A LOW-K DIELECTRIC LAYER

Device comprising a field of tips used in biotechnology applications

Refreshing wafers having low-k dielectric materials

Self-aligned mask formed utilizing differential oxidation rates of...

Selectively deposited silicon oxide layers on a silicon substrate

Self-aligned mask formed utilizing differential oxidation rates of...

DELIBERATE SEMICONDUCTOR FILM VARIATION TO COMPENSATE FOR RADIAL PR...

Method for fabricating semiconductor device

Method of patterning a layer of magnetic material

METHOD FOR MANUFACTURING MAGNETORESISTANCE HEAD

Use of selective ozone TEOS oxide to create variable thickness laye...

Deliberate semiconductor film variation to compensate for radial pr...

Gas chemistry cycling to achieve high aspect ratio gapfill with HDP...

Use of selective ozone teos oxide to create variable thickness laye...