Claims
- 1. A method of fabricating a buried heterojunction laser diode comprising the steps of:
- providing a heterostructure including a single quantum well or multi-quantum well active layer vertically confined between a p-type cladding layer and an n-type cladding layer; and
- impurity disordering the heterostructure to delineate an active laser stripe, the step of impurity disordering the heterostructure including the steps of
- implanting a first chemical species into the heterostructure to create a first impurity disordered region within at least a portion of the active layer and one of the cladding layers;
- implanting a second chemical species into the heterostructure to create a second impurity disordered region within at least a portion of the active layer and the other one of the cladding layers; and
- activating the first and the second chemical species.
- 2. A method as set forth in claim 1 wherein the step of activating includes a step of thermally annealing the heterostructure.
- 3. A method as set forth in claim 1 wherein the step of activating includes a step of forming a p-n junction between each of the impurity disordered regions and adjacent material of an associated one of the cladding layers.
- 4. A method as set forth in claim 1 wherein each of the steps of implanting includes an initial step of selecting the chemical species to cause, when activated, the associated disordered region to have an opposite type of electrical conductivity from that of the associated cladding layer.
Parent Case Info
This is a Division of application Ser. No. 469,996 filed Jan. 25, 1990
Government Interests
The Government has rights in this invention pursuant to Contract No. DE-AC04-76DP00789 awarded by the U.S. Department of Energy to AT&T Technologies, Inc.
US Referenced Citations (6)
Divisions (1)
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Number |
Date |
Country |
Parent |
469996 |
Jan 1990 |
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