graded composition cladding layers

Industry

CPC
H01S5/3215

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

Current Industry

H01S5/3215graded composition cladding layers

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Method of producing ultraviolet laser diode, and ultraviolet laser...
- Patent number 12,126,141
- Issue date Oct 22, 2024
- Asahi Kasei Kabushiki Kaisha
- Ziyi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cladding glass for solid-state lasers
- Patent number 12,057,679
- Issue date Aug 6, 2024
- Schott AG
- Antoine Carré
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing optical device and optical device
- Patent number 11,909,172
- Issue date Feb 20, 2024
- Asahi Kasei Kabushiki Kaisha
- Ziyi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum cascade laser
- Patent number 11,258,233
- Issue date Feb 22, 2022
- Kabushiki Kaisha Toshiba
- Shinji Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor element
- Patent number 11,088,512
- Issue date Aug 10, 2021
- Asahi Kasei Kabushiki Kaisha
- Kosuke Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser diode
- Patent number 11,056,857
- Issue date Jul 6, 2021
- OSRAM OLED GmbH
- Christoph Eichler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 10,826,276
- Issue date Nov 3, 2020
- OSRAM OLED GmbH
- Christian Lauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional photonic crystal surface-emitting laser with transp...
- Patent number 10,404,036
- Issue date Sep 3, 2019
- National Chiao Tung University
- Tien-Chang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and quantum cascade laser using the same
- Patent number 10,038,306
- Issue date Jul 31, 2018
- SHARP KABUSHIKI KAISHA
- Teruhisa Kotani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of p-type cladding regions using nitrogen gas for...
- Patent number 9,564,736
- Issue date Feb 7, 2017
- Soraa Laser Diode, Inc.
- Po Shan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride laser diode with engineered non-uniform alloy composition i...
- Patent number 9,444,224
- Issue date Sep 13, 2016
- Palo Alto Research Center Incorporated
- Christopher L. Chua
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic semiconductor chip and method for the production the...
- Patent number 9,397,262
- Issue date Jul 19, 2016
- Osram Opto Semiconductors GmbH
- Stephan Lutgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser with improved current conduction
- Patent number 9,373,937
- Issue date Jun 21, 2016
- Osram Opto Semiconductors GmbH
- Uwe Strauβ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method for manufacturing same
- Patent number 9,276,379
- Issue date Mar 1, 2016
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Tomoya Satoh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for producing a radiation-emitting component and radiation-e...
- Patent number 9,018,641
- Issue date Apr 28, 2015
- CSRAM Opto Semiconductors GmbH
- Peter Brick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and production method thereof
- Patent number 8,981,340
- Issue date Mar 17, 2015
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yasutoshi Kawaguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Surface emitting laser, light source, and optical module
- Patent number 8,755,422
- Issue date Jun 17, 2014
- Furukawa Electric Co., Ltd.
- Hitoshi Shimizu
- G02 - OPTICS
Information Patent Grant
Nitride semiconductor light emitting device
- Patent number 8,731,016
- Issue date May 20, 2014
- Sumitomo Electric Industries, Ltd
- Takashi Kyono
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Surface emitting laser, surface emitting laser array, light source...
- Patent number 8,494,022
- Issue date Jul 23, 2013
- Furukawa Electric Co., Ltd.
- Hitoshi Shimizu
- G02 - OPTICS
Information Patent Grant
Semiconductor layer structure with superlattice
- Patent number 8,471,240
- Issue date Jun 25, 2013
- Osram Opto Semiconductors GmbH
- Christoph Eichler
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride based semiconductor device and fabrication method for the same
- Patent number 8,422,527
- Issue date Apr 16, 2013
- Rohm Co., Ltd.
- Daisuke Nakagawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser, semiconductor laser device, and fabrication me...
- Patent number 8,311,073
- Issue date Nov 13, 2012
- Fuji Xerox Co., Ltd.
- Kazutaka Takeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated laser diode chip having a construction as...
- Patent number 8,194,712
- Issue date Jun 5, 2012
- Osram Opto Semiconductors GmbH
- Martin Müller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride based semiconductor device and fabrication method for the same
- Patent number 8,144,743
- Issue date Mar 27, 2012
- Rohm Co., Ltd.
- Daisuke Nakagawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor optical element and manufacturing method thereof
- Patent number 8,124,432
- Issue date Feb 28, 2012
- OpNext Japan, Inc.
- Tomonobu Tsuchiya
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor chip having a reduced band offset in its p-doped regi...
- Patent number 8,093,579
- Issue date Jan 10, 2012
- Osram Opto Semiconductors GmbH
- Bernd Mayer
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor layer structure with superlattice
- Patent number 8,022,392
- Issue date Sep 20, 2011
- Osram Opto Semiconductors GmbH
- Christoph Eichler
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III nitride semiconductor laser
- Patent number 7,949,026
- Issue date May 24, 2011
- Sumitomo Electric Industries, Ltd
- Takashi Kyono
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor layer structure with superlattice
- Patent number 7,893,424
- Issue date Feb 22, 2011
- Osram Opto Semiconductors GmbH
- Christoph Eichler
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitter
- Patent number 7,872,270
- Issue date Jan 18, 2011
- Ricoh Company, Ltd.
- Takashi Takahashi
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PRODUCING ULTRAVIOLET LASER DIODE
- Publication number 20250015562
- Publication date Jan 9, 2025
- Asahi Kasei Kabushiki Kaisha
- Ziyi ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE EMITTING LASER
- Publication number 20240088627
- Publication date Mar 14, 2024
- Sony Semiconductor Solutions Corporation
- Takahiro ARAKIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLADDING GLASS FOR SOLID-STATE LASERS
- Publication number 20210028605
- Publication date Jan 28, 2021
- SCHOTT AG
- Antoine Carré
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER
- Publication number 20190273362
- Publication date Sep 5, 2019
- Osram Opto Semiconductors GmbH
- Christian Lauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM CASCADE LASER
- Publication number 20190199065
- Publication date Jun 27, 2019
- KABUSHIKI KAISHA TOSHIBA
- Shinji SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Laser with Improved Current Conduction
- Publication number 20150255956
- Publication date Sep 10, 2015
- OSRAM Opt Semiconductors GmbH
- Uwe Strauß
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20130223463
- Publication date Aug 29, 2013
- PANASONIC CORPORATION
- Yasutoshi KAWAGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20130142210
- Publication date Jun 6, 2013
- SONY CORPORATION
- Takashi KYONO
- B82 - NANO-TECHNOLOGY
Information Patent Application
Optoelectronic Semiconductor Body with a Quantum Well Structure
- Publication number 20120298951
- Publication date Nov 29, 2012
- Osram Opto Semiconductors GmbH
- Tobias Meyer
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR TWO-PHOTO DEVICE
- Publication number 20120223354
- Publication date Sep 6, 2012
- Technion Research & Development Foundation
- Alex Hayat
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE BASED SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME
- Publication number 20120140785
- Publication date Jun 7, 2012
- Daisuke NAKAGAWA
- B82 - NANO-TECHNOLOGY
Information Patent Application
SURFACE EMITTING LASER, LIGHT SOURCE, AND OPTICAL MODULE
- Publication number 20120020383
- Publication date Jan 26, 2012
- FURUKAWA ELECTRIC CO., LTD.
- Hitoshi SHIMIZU
- G02 - OPTICS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20110272670
- Publication date Nov 10, 2011
- PANASONIC CORPORATION
- Yasutoshi KAWAGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for Producing a Radiation-Emitting Component and Radiation-E...
- Publication number 20110266567
- Publication date Nov 3, 2011
- Osram Opto Semiconductors GmbH
- Peter Brick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Production Method for a III-V Based Optoelectronic Semiconductor Ch...
- Publication number 20110260202
- Publication date Oct 27, 2011
- Osram Opto Semiconductors GmbH
- Stephan Lutgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, LIGHT SOURCE...
- Publication number 20110241564
- Publication date Oct 6, 2011
- FURUKAWA ELECTRIC CO., LTD.
- Hitoshi SHIMIZU
- G02 - OPTICS
Information Patent Application
SEMICONDUCTOR LASER, SEMICONDUCTOR LASER DEVICE, AND FABRICATION ME...
- Publication number 20110222569
- Publication date Sep 15, 2011
- FUJI XEROX CO., LTD
- Kazutaka TAKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE
- Publication number 20110168977
- Publication date Jul 14, 2011
- Osram Opto Semiconductors GmbH, a Germany corporation
- Christoph Eichler
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FO...
- Publication number 20100317136
- Publication date Dec 16, 2010
- Sumitomo Electric Industries, Ltd.
- Katsunori Yanashima
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR LASER
- Publication number 20100189148
- Publication date Jul 29, 2010
- Sumitomo Electric Industries, Ltd.
- Takashi Kyono
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT EMITTER
- Publication number 20100158064
- Publication date Jun 24, 2010
- Takashi Takahashi
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR OPTICAL ELEMENT AND MANUFACTURING METHOD THEREOF
- Publication number 20100150194
- Publication date Jun 17, 2010
- OpNext Japan, Inc.
- Tomonobu TSUCHIYA
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride based semiconductor device and fabrication method for the same
- Publication number 20100008391
- Publication date Jan 14, 2010
- ROHM CO., LTD.
- Daisuke Nakagawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Laser Element and Method of Fabrication Thereof
- Publication number 20090201961
- Publication date Aug 13, 2009
- SONY CORPORATION
- Yoshifumi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Monolithically integrated laser diode chip having a construction as...
- Publication number 20090122823
- Publication date May 14, 2009
- Osram Opto Semiconductors GmbH
- Martin Muller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20090026489
- Publication date Jan 29, 2009
- Mitsubishi Denki Kabushiki Kaisha
- Kyosuke Kuramoto
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor chip and method for producing a semiconductor chip
- Publication number 20090010290
- Publication date Jan 8, 2009
- Osram Opto Semiconductors GmbH
- Bernd Mayer
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20080265275
- Publication date Oct 30, 2008
- Mitsubishi Electric Corporation
- Yoshihiko HANAMAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER DIODE HAVING GRADED INTERLAYER
- Publication number 20080247435
- Publication date Oct 9, 2008
- Yoon Ho CHOI
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LAYER STRUCTURE WITH OVER LATTICE
- Publication number 20080054252
- Publication date Mar 6, 2008
- Christoph Eichler
- B82 - NANO-TECHNOLOGY

graded composition cladding layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of producing ultraviolet laser diode, and ultraviolet laser...

Cladding glass for solid-state lasers

Method for manufacturing optical device and optical device

Quantum cascade laser

Nitride semiconductor element

Laser diode

Semiconductor laser

Two-dimensional photonic crystal surface-emitting laser with transp...

Nitride semiconductor device and quantum cascade laser using the same

Epitaxial growth of p-type cladding regions using nitrogen gas for...

Nitride laser diode with engineered non-uniform alloy composition i...

Optoelectronic semiconductor chip and method for the production the...

Semiconductor laser with improved current conduction

Semiconductor light emitting device and method for manufacturing same

Method for producing a radiation-emitting component and radiation-e...

Nitride semiconductor device and production method thereof

Surface emitting laser, light source, and optical module

Nitride semiconductor light emitting device

Surface emitting laser, surface emitting laser array, light source...

Semiconductor layer structure with superlattice

Nitride based semiconductor device and fabrication method for the same

Semiconductor laser, semiconductor laser device, and fabrication me...

Monolithically integrated laser diode chip having a construction as...

Nitride based semiconductor device and fabrication method for the same

Nitride semiconductor optical element and manufacturing method thereof

Semiconductor chip having a reduced band offset in its p-doped regi...

Semiconductor layer structure with superlattice

Group III nitride semiconductor laser

Semiconductor layer structure with superlattice

Semiconductor light emitter

Patents Applicationslast 30 patents

METHOD OF PRODUCING ULTRAVIOLET LASER DIODE

SURFACE EMITTING LASER

CLADDING GLASS FOR SOLID-STATE LASERS

SEMICONDUCTOR LASER

QUANTUM CASCADE LASER

Semiconductor Laser with Improved Current Conduction

NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

Optoelectronic Semiconductor Body with a Quantum Well Structure

SEMICONDUCTOR TWO-PHOTO DEVICE

NITRIDE BASED SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME

SURFACE EMITTING LASER, LIGHT SOURCE, AND OPTICAL MODULE

NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

Method for Producing a Radiation-Emitting Component and Radiation-E...

Production Method for a III-V Based Optoelectronic Semiconductor Ch...

SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, LIGHT SOURCE...

SEMICONDUCTOR LASER, SEMICONDUCTOR LASER DEVICE, AND FABRICATION ME...

SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE

METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FO...

GROUP III NITRIDE SEMICONDUCTOR LASER

SEMICONDUCTOR LIGHT EMITTER

NITRIDE SEMICONDUCTOR OPTICAL ELEMENT AND MANUFACTURING METHOD THEREOF

Nitride based semiconductor device and fabrication method for the same

Semiconductor Laser Element and Method of Fabrication Thereof

Monolithically integrated laser diode chip having a construction as...

SEMICONDUCTOR LIGHT EMITTING DEVICE

Semiconductor chip and method for producing a semiconductor chip

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR LASER DIODE HAVING GRADED INTERLAYER

SEMICONDUCTOR LAYER STRUCTURE WITH OVER LATTICE