Claims
- 1. The process of forming an integrated light emitting diode array comprising in combination the steps of; providing a substrate of optically isolating semiconductor material; growing an epitaxial region of a compound semiconductor material selected from the group consisting of AB.sub.1-x C.sub.x and AxB.sub.1-x C, said material having a vertical variation in the x value of the concentration of ingredients and decreasing in the direction of the surface of said region; forming a plurality of p-n junctions to selected depths in said epitaxial region.
- removing portions of said substrate in registration with said p-n junctions; and
- providing electrical contact across each said p-n junction.
- 2. The process of claim 1 including the further step of applying an optically isolating layer with openings formed over said substrate region in registration with each said p-n junction.
- 3. The process of claim 1 wherein said substrate is GaAs and said graded region is Al.sub.x Ga.sub.1-x As.
- 4. The process of claim 1 wherein said substrate is GaP and said graded region is GaAs.sub.1-x P.sub.x.
Parent Case Info
This is a division of application Ser. No. 835,098 filed 09/21/77.
US Referenced Citations (11)
Non-Patent Literature Citations (2)
Entry |
Murray et al., "Lighting Up in a Group", Electronics, Mar. 4, 1968, pp. 104-110. |
Craford et al., "LED Technology", Solid State Technology, Jan. 1974, pp. 39-46 and 58. |
Divisions (1)
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Number |
Date |
Country |
Parent |
835098 |
Sep 1977 |
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