An Isolated-Merged Vertical Capacitor Cell for Large Capacity dRAM; Nakajima et al., IEDM, 1984, pp. 240-243. |
Lee et al., "Short-Channel Field Effect Transistors in V-Grooves", IBM TDB, vol. 22, No. 8B, Jan. 1980, pp. 3630-3634. |
Chang et al., "Fabrication of V-MOS or U-MOS Random Access Memory Cells with a Self Aligned Word Line", IBM TDB, vol. 22, Dec. 1979, pp. 2768-2771. |
Barson, "Dynamic DMOS Random-Access Memory Cell Design With Trench", IBM TDB, vol. 21, No. 7, Dec. 1978, pp. 2755-2756. |
Kenney, "V-Groove Dynamic Memory Cell", IBM TDB, vol. 23, No. 9, Feb. 1981, pp. 967-969. |
Kenney, "Reduced Bit Line Capacitance in VMOS Devices", IBM TDB, vol. 23, No. 9, Feb. 1981, pp. 4052-4053. |
Fatula et al, "N Skin Elimination in UMOS Device by Reoxidation", IBM TDB, vol. 22, No. 8A, Jan. 1980 pp. 3204-3205. |
Chang, "Vertical FET Random-Access Memories with Deep Trench Isolation", IBM TDB, vol. 22, No. 8B, Jan. 1980, pp. 3683-3687. |
"CMOS Dynamic Random-Access Memory Cell", IBM Tech. Disc. Bull., vol. 28-6 Nov. 1985, pp. 2578-2579. |