Claims
- 1. A method of producing a silicon carbide body having homogeneously interconnected parts, comprising the steps of:
- (a) forming an assembly of shaped carbon parts such that junctions are formed between abutting surfaces of said parts, said parts having a density of 0.6 to 1.3 g/cm.sup.3, a porosity of 30 to 70% and an air permeability of 1 to 8 cm.sup.3 /min.;
- (b) immersing said assembly in liquid silicon under a chemically inert atmosphere for a period sufficient at least to enable penetration of liquid silicon into each of said parts throughout the thickness thereof and into said junction and for a period sufficient at least to enable reaction between the penetrating silicon and the carbon of said carbon parts to form a homogeneous silicon carbide structure at each of said junctions and through said parts;
- (c) removing said assembly following step (b) from said liquid silicon; and
- (d) cooling the assembly removed from the liquid silicon under an inert atmosphere.
- 2. A method of producing a silicon carbide body having homogeneously interconnected parts, comprising the steps of:
- (a) forming an assembly of shaped carbon parts such that junctions are formed between abutting surfaces of said parts, and parts having a density of 0.6 to 1.3 g/cm.sup.3, a porosity of 30 to 70% and an air permeability of 1 to 8 cm.sup.3 /min.;
- (b) immersing said assembly in liquid silicon under a chemically inert atmosphere for a period sufficient at least to enable penetration of liquid silicon into each of said parts throughout the thickness thereof and into said junction and for a period sufficient at least to enable reaction between the penetrating silicon and the carbon of said graphite parts to form a homogeneous silicon carbide structure at each of said junctions and through said parts;
- (c) removing said assembly following step (b) from said liquid silicon;
- (d) cooling the assembly removed from the liquid silicon under an inert atmosphere; and
- (e) removing excess silicon from said assembly prior to the cooling thereof by heating said assembly following step (c) to a temperature of at most 2000.degree. C. and sufficient to vaporize adherent adherent elemental silicon in vacuum or in an inert atmosphere.
- 3. A method of producing a silicon carbide body having homogeneously interconnected parts, comprising the steps of:
- (a) forming an assembly of shaped carbon parts such that junctions are formed between abutting surfaces of said parts, said parts having a density of 0.6 to 1.3 g/cm.sup.3, a porosity of 30 to 70% and an air permeability of 1 to 8 cm.sup.3 /min.;
- (b) immersing said assembly in liquid silicon under a chemically inert atmosphere for a period sufficient at least to enable pernetration of liquid silicon into each of said parts throughout the thickness thereof and into said junction and for a period sufficient at least to enable reaction between the penetrating silicon and the carbon of said carbon parts to form a homogeneous silicon carbide structure at each of said junctions and through said parts;
- (c) removing said assembly following step (b) from said liquid silicon;
- (d) cooling the assembly removed from the liquid silicon under an inert atmosphere; and
- (e) eliminating excess silicon adherent to said assembly by immersing said assembly following step (d) in a solution in which elemental silicon is soluble.
- 4. The method defined in claim 1, claim 2 or claim 3 wherein said parts have a density of 0.8 to 1.2 c/cm.sup.3.
- 5. The method defined in claims 1, 2 or claim 3 wherein said parts are formed by the steps of:
- (a.sub.1) coating carbonaceous particles with a binder;
- (a.sub.2) shaping the binder-coated carbonaceous particles to the shape of one of said carbon parts; and
- (a.sub.3) coking the shaped particles and binder.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3037199 |
Oct 1980 |
DEX |
|
Parent Case Info
This application is a continuation of application Ser. No. 307,593 filed Oct. 1, 1981 now abandoned.
US Referenced Citations (4)
Foreign Referenced Citations (1)
Number |
Date |
Country |
841716 |
Jul 1960 |
GBX |
Continuations (1)
|
Number |
Date |
Country |
Parent |
307593 |
Oct 1981 |
|