Claims
- 1. A method of manufacturing a CCD solid state image sensing device comprising the steps of:
- (a) forming a first insulating layer made of SiO.sub.2 on a P-type layer;
- (b) forming a second insulating layer made of Si.sub.3 N.sub.4 on said first insulating layer;
- (c) forming a third insulating layer made of SiO.sub.2 on said second insulating layer;
- (d) removing said second and third insulating layers formed on a photo-sensitive section;
- (e) forming a transfer electrode on said third insulating layer;
- (f) implanting arsenic into said P-type layer to form a photo-sensitive region using said transfer electrode as a mask; and
- (g) carrying out a heat treatment in a nitrogen atmosphere to form said N-type impurity diffusion region.
- 2. The method according to claim 1, in which said arsenic is implanted at a depth between 0.3 .mu.m to 0.4 .mu.m.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3-051464 |
Mar 1991 |
JPX |
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Parent Case Info
This is a division, of application Ser. No. 07/851,336, filed Mar. 16, 1992 abandoned.
US Referenced Citations (4)
Divisions (1)
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Number |
Date |
Country |
Parent |
851336 |
Mar 1992 |
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