METHOD OF MANUFACTURING A CMOS IMAGE SENSOR

Abstract

Disclosed is a method of manufacturing a CMOS image sensor, capable of preventing hillock-type defects caused by the delamination of interconnections from occurring in the CMOS image sensor. The method of manufacturing the CMOS image sensor includes preparing a substrate having a first metal interconnection, forming an interlayer insulation layer over the first metal interconnection, forming a contact hole to expose a part of the first metal interconnection by etching the interlayer insulation layer, forming a buffer layer on the interlayer insulation layer along an inner surface of the contact hole, performing an annealing process, forming a spacer on an inner sidewall of the contact hole by etching the buffer layer, forming a barrier metal layer along a top surface of the interlayer insulation layer including the spacer, forming a contact plug on the barrier metal layer such that the contact hole is filled with the contact plug, and forming a second metal interconnection on the interlayer insulation layer such that the second metal interconnection makes contact with the contact plug.

Description

TECHNICAL FIELD

The present invention relates to a semiconductor manufacturing technology, and more particularly to a method of forming a contact plug for manufacturing a CMOS image sensor including a metal interconnection having a multi-layer structure.

BACKGROUND ART

In a method of manufacturing a CMOS image sensor, a high-temperature heat treatment is performed after depositing a passivation layer in order to improve a dark characteristic. However, as shown in FIG. 1, interconnection delamination may occur due to the high-temperature heat treatment, so that the product yield of a device may be reduced and the device may become defective. This is because the heat treatment is performed at the high temperature for a long time after the passivation layer has been formed.

DETAILED DESCRIPTION OF THE INVENTION

Technical Problem

The present invention has been made to solve the problems occurring in the related art, and an object of the present invention is to provide a method of manufacturing a CMOS image sensor, capable of preventing hillock-type defect caused by the delamination of interconnections for a CMOS image sensor.

Technical Solution

In order to accomplish the object, there is provided a method of manufacturing a CMOS image sensor including the steps of preparing a substrate having a first metal interconnection, forming an interlayer insulation layer over the first metal interconnection, forming a contact hole to expose a part of the first metal interconnection by etching the interlayer layer insulation layer, forming a buffer layer on the interlayer insulation layer and an inner surface of the contact hole, performing an annealing process, forming a spacer on a sidewall of the contact hole by etching the buffer layer, forming a barrier metal layer on a surface of the interlayer insulation layer including the spacer, forming a contact plug on the barrier metal layer such that the contact hole is filled with the contact plug, and forming a second metal interconnection on the interlayer insulation layer such that the second metal interconnection makes contact with the contact plug.

Preferably, the buffer layer includes a nitride layer.

Preferably, the annealing process includes a hydrogen (H₂) annealing process.

Preferably, the annealing process is performed at a temperature of 400° C. to 700° C.

Preferably, concentration of H₂ is in a range of 1% to 80% in the hydrogen (H₂) annealing process.

Preferably, the spacer is formed through a dry etching process or a wet etching process.

Preferably, the dry etching process includes an etch back process or a blanket process.

Preferably, the barrier metal layer includes one selected from the group consisting of Ti, TiN, Ta, TaN, AlSiTiN, NiTi, TiBN, ZrBN, TiAlN, TiB₂, Ti/TiN and Ta/TaN.

Preferably, the second metal interconnection includes one selected from the group consisting of Ti/Al/TiN, Ti/Al/Ti/TiN and Ti/TiN/Al/Ti/TiN.

Advantageous Effects

According to the method of manufacturing the CMOS image sensor of the present invention having the above structure, the annealing process for improving a dark characteristic of a CMOS image sensor is performed using a buffer layer as a protective layer after the contact hole has been formed, so that time for an annealing process performed after a passivation process can be reduced or the annealing process can be omitted. Accordingly, thermal budget can be reduced, so that interconnection delamination can be prevented.

Description of Drawings

FIG. 1 is a view showing hillock-type defects occurring in a method of manufacturing a CMOS image sensor according to the related art; and

FIGS. 2 to 8 are sectional views showing a method of manufacturing a CMOS image sensor according to an embodiment of the present invention.

DESCRIPTION OF REFERENCE NUMERALS SHOWN IN THE DRAWINGS

100:	substrate	102:	first metal interconnection
104:	interlayer insulation layer	106:	contact hole
108:	buffer layer	112:	barrier metal layer
114:	contact plug	116:	second metal interconnection

Mode for Invention

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the thickness and the space of layers and regions may be exaggerated to facilitate explanation. When a first layer is referred to as being ‘on’ or ‘above’ a second layer or a substrate, it could mean that the first layer is formed directly on the second layer or the substrate, or it could also mean that a third layer may be formed between the first layer and the substrate. Furthermore, the same reference numerals designate the same layers throughout the drawings. In addition, English characters of the reference numerals refer to partial modification of the same layers by an etch process or a polishing process.

Embodiment

FIGS. 2 to 8 are sectional views showing a method of manufacturing a CMOS image sensor according to an embodiment of the present invention.

As shown in FIG. 2, a first metal interconnection 102 is formed on a substrate 100 including a semiconductor structure including a plurality of transistors and a photodiode serving as a light receiving device. In this case, the first metal interconnection 102 may include one selected from the group consisting of aluminum (Al), copper

(Cu), tungsten (W), or platinum (Pt). Preferably, the first metal interconnection 102 includes Al.

Then, an interlayer insulation layer 104 is formed on the substrate 100 to cover the first metal interconnection 102. In this case, the interlayer insulation layer 104 includes an oxide, preferably, a silicon oxide (SiO₂). For example, the interlayer insulation layer 104 may include one selected from the group consisting of a BPSG (BoroPhosphoSilicate Glass) film, a PSG (PhosphoSilicate Glass) film, a BSG (BoroSilicate Glass) film, a USG (Un-doped Silicate Glass) film, a PE-TEOS (Plasma Enhanced-Tetra Ethyl Ortho Silicate) film, an HDP (High Density Plasma) film and an FSG (Fluorinated Silicate Glass) film. In addition, the interlayer insulation layer 104 may be formed by coating an SOG (Spin On Glass) based oxide layer. In addition, the film may have a stack structure of at least two layers. For example, if the film has the stack structure, the film includes SOG/PE-TEOS films or FSG/PE-TEOS films.

Subsequently, although not shown, if a step exists in the interlayer insulation layer 104, the interlayer insulation layer 104 may be planarized through a CMP (Chemical Mechanical Polishing) process.

Next, the interlayer insulation layer 104 is etched, thereby forming a contact hole 106 to expose a part of the first metal interconnection 102. The etching process includes a dry etching process or a wet etching process.

Thereafter, as shown in FIG. 3, a buffer layer 108 is formed on the interlayer insulation layer 104 and an inner surface of the contact hole 106 (see FIG. 2). In this case, the buffer layer 108 may include a nitride layer, preferably, a silicon nitride layer (Si_xN_y, x and y are natural numbers). The buffer layer 108 may be formed through one selected from the group consisting of a PECVD (Plasma Enhanced Chemical Vapor Deposition) process, an ALD

(Atomic Layer Deposition) process and an MOCVD (Metal Organic CVD) process.

Thereafter, as shown in FIG. 4, a heat treatment process 110 is performed in order to improve a dark characteristic. The heat treatment process 110 includes a hydrogen annealing process, which is performed at the temperature in the range about 400° C. to about 700° C. using the buffer layer 108 as a protective layer. In the hydrogen annealing process, the concentration of H₂ is in the range of 1% to 80%.

Thereafter, as shown in FIG. 5, spacers 108A are formed on the sidewalls of the contact hole 106 by etching the buffer layer 108. The etching process includes a dry etching process or a wet etching process. The dry etching process may include an etch back process or a blanket process.

Next, as shown in FIG. 6, a barrier metal layer 112 is formed on the spacers 108A, the first metal interconnection 102, and the interlayer insulation layer 104 along the inner surface of the contact hole 106. The barrier metal layer 112 may include one selected from the group consisting of Ti, TiN, Ta, TaN, AlSiTiN, NiTi, TiBN, ZrBN, TiAlN, TiB₂, Ti/TiN and Ta/TaN.

Then, as shown in FIG. 7, after depositing a conductive material for a contact plug on a barrier metal layer 112a such that the contact hole 106 is filled with the conductive material, the resultant structure is planarized through an etch back process or a CMP process, thereby forming a contact plug 114. In this case, the planarization process is performed until a top surface of the interlayer insulation layer 104 is exposed. In other words, when the planarization process is performed, the interlayer insulation layer 104 serves as an etch stop layer or a polish stop layer. In this case, the contact plug 114 includes tungsten (W) or a polycrystalline silicon layer. Preferably, the contact plug 114 includes W.

Then, as shown in FIG. 8, a second metal interconnection 116 is formed on the contact plug 114 and the interlayer insulation layer 104 such that the second metal interconnection 116 makes contact with the contact plug 114. The second metal interconnection 116 may include one selected from the group consisting of a Ti/Al/TiN structure, a Ti/Al/Ti/TiN structure and a Ti/TiN/Al/Ti/TiN structure. In addition, the second metal interconnection 116 may have a barrier metal layer/Al/barrier metal layer structure. In this case, the barrier metal layer may include one selected from the group consisting of Ta, TaN, AlSiTiN, NiTi, TiBN, ZrBN, TiAlN, TiB₂ and Ta/TaN.

Although an exemplary embodiment of the present invention has been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Claims

1-9. (canceled)

10. A method of manufacturing an image sensor, the method comprising: forming a first metal interconnection on a substrate of the image sensor;forming an interlayer insulation layer on the first metal interconnection;forming a contact hole through the interlayer insulation layer to expose a part of the first metal interconnection;forming a buffer layer on an inner sidewall of the contact hole;performing an annealing process;etching the buffer layer to form a spacer on the inner sidewall of the contact hole;forming a barrier metal layer on the spacer;filling the contact hole with conductive material to form a contact plug on the barrier metal layer; andforming a second metal interconnection on the interlayer insulation layer and the contact plug.

11. The method of claim 10, wherein said etching the buffer layer, said forming a barrier metal layer, said filling the contact hole, and said forming a second metal interconnection occur after said performing an annealing process.

12. The method of claim 10, wherein said forming a buffer layer comprises forming a nitride layer on the inner sidewall of the contact hole.

13. The method of claim 10, wherein said performing an annealing process comprises performing a hydrogen (H2) annealing process.

14. The method of claim 13, wherein said performing an annealing process comprises performing the annealing process at a temperature of 400° C. to 700° C.

15. The method of claim 13, wherein said performing a hydrogen (H2) annealing process comprises performing said hydrogen (H2) annealing process with a concentration of hydrogen (H2) in a range of 1% to 80%.

16. The method of claim 10, wherein said forming a barrier metal layer comprises forming the barrier metal layer selected from the group consisting of Ti, TiN, Ta, TaN, AlSiTiN, NiTi, TiBN, ZrBN, TiAlN, TiB2, Ti/TiN, and Ta/TaN.

17. The method of claim 10, wherein said forming a second metal interconnection comprises forming the second metal interconnection selected from the group consisting of Ti/Al/TiN, Ti/Al/Ti/TiN, and Ti/TiN/Al/Ti/TiN.

18. A method of manufacturing an image sensor, the method comprising: forming a first metal interconnection on a substrate of the image sensor;forming an interlayer insulation layer on the first metal interconnection;forming a contact hole through the interlayer insulation layer to expose the first metal interconnection;forming a spacer on an inner sidewall of the contact hole;forming a barrier metal layer on an inner sidewall of the spacer; andfilling the contact hole with conductive material to form a contact plug on the barrier metal layer.

19. The method of claim 18, wherein said forming a spacer comprises: forming a buffer layer on the inner sidewall of the contact hole; andetching the buffer layer.

20. The method of claim 19, further comprising annealing the buffer layer.

21. The method of claim 20, wherein said annealing comprises performing a hydrogen (H2) annealing process with a concentration of hydrogen (H2) in a range of 1% to 80%.

22. The method of claim 18, wherein said forming a spacer comprises: forming a nitride layer on the inner sidewall of the contact hole; andetching the nitride layer.

23. The method of claim 22, further comprising annealing the nitride layer.

24. The method of claim 23, wherein said annealing comprises performing a hydrogen (H2) annealing process with a concentration of hydrogen (H2) in a range of 1% to 80%.

25. An image sensor comprising: a substrate including a light-receiving device;a first metal interconnection formed on the substrate;an interlayer insulation layer formed on the metal layer;a contact hole through the interlayer insulation layer;a spacer formed on an inner sidewall of the contact hole;a barrier metal layer formed on an inner sidewall of the spacer; anda conductive contact plug formed on the barrier metal layer and configured to fill the contact hole.

26. The image sensor of claim 25, wherein the barrier metal layer comprises a metal layer selected from the group consisting of Ti, TiN, Ta, TaN, AlSiTiN, NiTi, TiBN, ZrBN, TiAlN, TiB2, Ti/TiN, and Ta/TaN.

27. The image sensor of claim 25, further comprising a second metal interconnection formed on the interlayer insulation layer and coupled to the conductive contact plug.

28. The image sensor of claim 27, wherein the second metal interconnection comprises a metal interconnection selected from the group consisting of Ti/Al/TiN, Ti/Al/Ti/TiN, and Ti/TiN/Al/Ti/TiN.

29. The image sensor of claim 27, wherein the spacer comprises an annealed nitrogen layer.