Claims
- 1. A method of manufacturing a semiconductor device, comprising the steps of:
- forming an insulation film on a semiconductor substrate having an active device;
- forming a hole in said insulation film to expose a forming portion of the active device of said semiconductor substrate;
- uniformly applying silver bromide emulsion onto said insulation film to fill the hole;
- exposing the silver bromide emulsion to form a wiring pattern; and
- laser annealing the silver bromide emulsion to integrally form a flat silver wiring corresponding to the wiring pattern and a contact connecting the silver wiring to the active device.
- 2. The method according to claim 1, wherein said silver bromide emulsion is applied by spin coating.
- 3. The method according to claim 1 wherein said laser annealing is performed by sintering silver at a temperature of 600.degree. C.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-004735 |
Jan 1994 |
JPX |
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Parent Case Info
This is a division of application Ser. No. 08/371,126, filed Jan. 11, 1995 abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0094789 |
Jul 1981 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Wolf, Silicon Processing, vol. 2, 1990, Lattice Press, pp. 101-111. |
IBMTDB, Pressman et al., Silver Metallurgy for Semiconductor Device, vol. 13, No. 5, Oct. 1970 pp. 1118-1119. |
Divisions (1)
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Number |
Date |
Country |
Parent |
371126 |
Jan 1995 |
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