Claims
- 1. A method of manufacturing a semiconductor device comprising:
- forming an impurity diffused region of n-conductivity type in a silicon substrate comprising a semiconductor body of p-conductivity type;
- forming a superposed insulation film structure comprising a first insulation layer and a second insulation layer comprising a film of a component selected from the group consisting of phospho-silicate glass, arseno-silicate glass, boro-phospho-silicate glass, boro-arseno-silicate glass, phospho-arseno-silicate glass, and boro-phospho-arseno-silicate glass, said first insulation layer being formed on said semiconductor body, and said second insulation layer being formed on said semiconductor body, and said second insulation layer being formed on said first insulation layer and containing impurities of n-conductivity type;
- forming in said first and second insulation layers a continuous contact hole opening onto said impurity diffused region;
- forming a single crystalline semiconductor silicon layer of said n-conductivity type in said contact hole of said first and second insulation layers by an epitaxial growth process, with the single crystalline semiconductor silicon layer contacting said second insulation layer to diffuse said impurities from said second insulation layer into said single crystalline semiconductor silicon layer during said epitaxial growth process to increase an impurity concentration in a surface region thereof while said first insulation layer prevents impurity diffusion into the silicon substrate; and
- forming a conductive layer on said semiconductor silicon layer.
- 2. A method of manufacturing a semiconductor device according to claim 1, in which a concentration of impurity of said single crystal semiconductor layer is higher than 4.times.10.sup.18 cm.sup.-3.
- 3. A method of manufacturing a semiconductor device according to claim 1, in which said conductive layer is an aluminum layer.
- 4. A method of manufacturing a semiconductor device according to claim 1, further comprising a step of forming a second conductive layer between said single crystalline semiconductor silicon layer and said conductive layer.
- 5. A method of manufacturing a semiconductor device according to claim 4, in which said second conductive layer is a layer formed of a component selected from the group consisting of molybdenum, titanium, tungsten and tantalum.
- 6. A method of manufacturing a semiconductor device according to claim 4, in which said second conductive layer is a layer formed of an alloy titanium and molybdenum.
- 7. A method of manufacturing a semiconductor device according to claim 4, in which said second conductive layer is a layer formed of a component selected from the group consisting of molybdenum silicide, titanium silicide, tungsten silicide and tantalum silicide.
- 8. A method of manufacturing a semiconductor device according to claim 4, in which said second conductive layer is a layer formed of titanium nitride.
Priority Claims (1)
Number |
Date |
Country |
Kind |
61-275801 |
Nov 1986 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 07/515,695 filed Apr. 26, 1990, which is a continuation of abandoned application Ser. No. 07/374,557, filed Jul. 3, 1989, which is a continuation of abandoned application Ser. No. 07/122,038, filed Nov. 17, 1987.
US Referenced Citations (13)
Foreign Referenced Citations (5)
Number |
Date |
Country |
A0018175 |
Oct 1980 |
EPX |
0037829 |
Mar 1982 |
JPX |
0186051 |
Sep 1985 |
JPX |
0195972 |
Oct 1985 |
JPX |
0245657 |
Oct 1987 |
JPX |
Non-Patent Literature Citations (3)
Entry |
Patent Abstracts of Japan, vol. 9, No. 212 Aug. 1985, Semconductor Device No. JP 60-74675 (A). |
L. Jastrzebski, "Silicon CVD for SOI: Principles and Possible Applications," Solid State Technology, pp. 239-243, Sep. 1984. |
K. Tanno et al., "Selective Silicon Epitaxy Using Reduced Pressure Technique," Japanese Journal of Applied Physics, vol. 21, No. 9, L564-L566, Sep. 1982. |
Continuations (3)
|
Number |
Date |
Country |
Parent |
515695 |
Apr 1990 |
|
Parent |
374557 |
Jul 1989 |
|
Parent |
122038 |
Nov 1987 |
|