Claims
- 1. A method of manufacturing a semiconductor memory device having a capacitor formed by arranging a dielectric film consisting of two layers of a silicon oxide film and a silicon nitride film between a silicon film and another electrode film;said method comprising the steps, for forming said dielectric film, of: forming a silicon oxide film on said silicon film by dry oxidation method; and thereafter forming a silicon nitride film on the interface of said silicon film with said silicon oxide film by thermally nitriding said silicon film using NO gas.
- 2. The method of manufacturing a semiconductor memory device according to claim 1, wherein said silicon film is formed of a phosphorus-doped amorphous silicon film.
- 3. The method of manufacturing a semiconductor memory device according to claim 1, wherein said silicon oxide film is further annealed in a steam atmosphere for forming a dense silicon oxide film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-156424 |
Jun 1999 |
JP |
|
Parent Case Info
This application is a divisional of application Ser. No. 09/440,701 filed Nov. 16, 1999 now U.S. Pat. No. 6,344,394.
US Referenced Citations (17)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0 571 692 |
Jan 1993 |
EP |