Claims
- 1. A method of manufacturing a semiconductor memory device having a capacitor formed by arranging a dielectric film consisting of two layers of a silicon oxide film and a silicon nitride film between a silicon film and another electrode film;said method comprising the steps, for forming said dielectric film, of: thermally nitriding said silicon film by using NO gas to form a silicon nitride film on said silicon film; and thereafter laminating a silicon oxide film on said silicon nitride film.
- 2. The method of manufacturing a semiconductor memory device according to claim 1, wherein said silicon film is formed of a phosphorus-doped amorphous silicon film.
- 3. The method of manufacturing a semiconductor memory device according to claim 1, wherein said silicon oxide film is further annealed in a steam atmosphere for forming a dense silicon oxide film.
- 4. The method of manufacturing a semiconductor memory device according to claim 2, wherein said phosphorus-doped amorphous silicon film is crystallized when said step of nitriding said silicon film is carried out.
- 5. The method of manufacturing a semiconductor memory device according to claim 1, wherein said step of nitriding said silicon film is carried out at a temperature between 850° C. to 1150° C.
- 6. The method of manufacturing a semiconductor memory device according to claim 1, further comprising the step of forming said another electrode film on said silicon oxide film with the bottom of said another electrode film contacting said silicon oxide film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-156424 |
Jun 1999 |
JP |
|
Parent Case Info
This application is a divisional of application Ser. No. 10/059,122 filed Jan. 31, 2002, U.S. Pat. No. 6,448,189 which is a divisional of Ser. No. 09/440,701, Filed Nov. 16. 1999, now U.S. Pat. No. 6,344,394
US Referenced Citations (18)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0 571 692 |
Jan 1993 |
EP |
9-205155 |
Aug 1997 |
JP |