Claims
- 1. A method of manufacturing a field effect transistor comprising the steps of:
- forming an electrode layer on a semiconductor substrate, forming a first insulating layer constituted by a first upper oxide film (20) covering the top of said electrode layer, and a first side wall insulating film (20a, 20b, 20c, 20d) covering the side thereof, and forming an impurity region (6) adjacent to said first side wall insulating film of said semiconductor substrate,
- forming a conductive layer (15) and a second insulating layer (21) over said semiconductor substrate and on said first insulating layer to pattern a configuration having a side on said first insulating layer,
- forming a third insulating layer (30) on the surface of said semiconductor substrate, and
- etching said third insulating layer to form a second side wall insulating film (21a) contacting the side of said conductive layer located over said first insulating layer, with the bottom side end thereof located on the surface of said first side wall insulating film.
- 2. The method of manufacturing a field effect transistor according to claim 1, wherein said step of forming said second side wall insulating film (20a) comprises the step of forming a side wall insulating film having the bottom side end thereof located outside the side wall of said conductive layer (4b, 4c).
Priority Claims (1)
Number |
Date |
Country |
Kind |
2-115641 |
May 1990 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 07/685,398 filed Apr. 16, 1991 now U.S. Pat. No. 5,157,469.
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Aug 1989 |
|
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Nov 1990 |
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May 1992 |
|
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1-257364 |
Oct 1989 |
JPX |
2-40949 |
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JPX |
Non-Patent Literature Citations (3)
Entry |
Watanabe et al., "Stacked Capacitor Cells for High-density dynamic RAMs", IEEE 1988, pp. 600-603. |
Kimura et al., "An Optically Delineated 4.2.mu.m.sup.2 Self-Aligned Isolated-Plate Stacked-Capacitor DRAM Cell", IEEE Transactions on Electron Devices, vol. 35, No. 10 (Oct. 1988), pp. 1591-1594. |
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Divisions (1)
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Number |
Date |
Country |
Parent |
685398 |
Apr 1991 |
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