characterised by the proximity or the relative position of the source or drain electrode and the gate electrode

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CPC
H01L29/41775

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/41775characterised by the proximity or the relative position of the source or drain electrode and the gate electrode

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,300,751
- Issue date May 13, 2025
- Samsung Electronics Co., Ltd.
- Junggil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 12,294,021
- Issue date May 6, 2025
- Kioxia Corporation
- Tomonori Kajino
- G11 - INFORMATION STORAGE
Information Patent Grant
High electron mobility transistor with improved barrier layer
- Patent number 12,294,026
- Issue date May 6, 2025
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer for semiconductor device
- Patent number 12,283,618
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Ting Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multiple electrodes and an insulation film
- Patent number 12,283,615
- Issue date Apr 22, 2025
- Kabushiki Kaisha Toshiba
- Hiroki Hatada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source leakage current suppression by source surrounding gate struc...
- Patent number 12,278,272
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Aurelien Gauthier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having capping layers with different germanium...
- Patent number 12,278,271
- Issue date Apr 15, 2025
- Samsung Electronics Co., Ltd.
- Dahye Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D selective material transformation to integrate 2D material elements
- Patent number 12,272,692
- Issue date Apr 8, 2025
- Tokyo Electron Limited
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-line interconnect structure and manufacturing method
- Patent number 12,272,731
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective and isotropic etch of silicon over silicon-germanium allo...
- Patent number 12,272,558
- Issue date Apr 8, 2025
- Tokyo Electron Limited
- Matthew Flaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 12,272,734
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shiang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device including etch stop pattern and method of forming the...
- Patent number 12,268,007
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor nanostructures device structure with backside contact
- Patent number 12,266,700
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,261,208
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Yonghee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,217
- Issue date Mar 25, 2025
- Fuji Electric Co., Ltd.
- Masakazu Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Topology selective and sacrificial silicon nitride layer for genera...
- Patent number 12,255,240
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yang Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etching method and semiconductor structure manufactured u...
- Patent number 12,255,074
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Da Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including plurality of gate fingers with vario...
- Patent number 12,249,543
- Issue date Mar 11, 2025
- Sumitomo Electric Industries, Ltd.
- Kenya Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning gate lengths in multi-gate field effect transistors
- Patent number 12,249,636
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having spacer between contract patterns
- Patent number 12,249,648
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Hyun-Seung Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for auto-aligned manufacturing of a VDMOS transistor, and au...
- Patent number 12,243,922
- Issue date Mar 4, 2025
- STMicroelectronics S.r.l.
- Vincenzo Enea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,243,938
- Issue date Mar 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,237,383
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Dohee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and forming method thereof
- Patent number 12,237,384
- Issue date Feb 25, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- ChihCheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including insulation patterns with different...
- Patent number 12,237,385
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Bongkwan Baek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with continuous active region and raised source/...
- Patent number 12,230,684
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jinha Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source contact formation of MOSFET with gate shield buffer for pitc...
- Patent number 12,230,707
- Issue date Feb 18, 2025
- Silanna Asia Pte Ltd
- Touhidur Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 12,224,203
- Issue date Feb 11, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device using gate-through imp...
- Patent number 12,224,211
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Hee Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming backside power rails
- Patent number 12,224,324
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS
- Publication number 20250072099
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT...
- Publication number 20250072105
- Publication date Feb 27, 2025
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE
- Publication number 20250072032
- Publication date Feb 27, 2025
- Industrial Technology Research Institute
- Shin-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250072034
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Yosuke HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250063799
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Structures for Dual-Thickness Active Area SOI FETS
- Publication number 20250063822
- Publication date Feb 20, 2025
- pSemi Corporation
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH GATE SPACER AND METHOD FOR FORM...
- Publication number 20250062158
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Li CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD
- Publication number 20250056846
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056866
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENHANCED PLACEHOLDER POSITION MARGIN
- Publication number 20250056864
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS
- Publication number 20250056867
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250048694
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hsien YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF
- Publication number 20250048711
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Ting KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR CHANNEL REGIONS AND METHODS OF FORMING THE SAME
- Publication number 20250040238
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...
- Publication number 20250040165
- Publication date Jan 30, 2025
- STMicroelectronics (Rousset) SAS
- Arnaud REGNIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS
- Publication number 20250022877
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...
- Publication number 20250022945
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250022946
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250015157
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Beomjin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250015084
- Publication date Jan 9, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND MANUFACTURING METHOD T...
- Publication number 20250015079
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250014995
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Jinwoo LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE CONTACT OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTU...
- Publication number 20250015153
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guo-Zhou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH DUAL LAYER ISOLATION STRUCTURE AND METHOD
- Publication number 20250006548
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Chih HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACER LINERS
- Publication number 20250006808
- Publication date Jan 2, 2025
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250006792
- Publication date Jan 2, 2025
- Samsung Electronics Co., Ltd.
- Tae Hyun Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER
- Publication number 20250006807
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chuan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429297
- Publication date Dec 26, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the proximity or the relative position of the source or drain electrode and the gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor memory device

High electron mobility transistor with improved barrier layer

Inner spacer for semiconductor device

Semiconductor device with multiple electrodes and an insulation film

Source leakage current suppression by source surrounding gate struc...

Semiconductor device having capping layers with different germanium...

3D selective material transformation to integrate 2D material elements

Middle-of-line interconnect structure and manufacturing method

Selective and isotropic etch of silicon over silicon-germanium allo...

Semiconductor device and method for forming the same

Memory device including etch stop pattern and method of forming the...

Semiconductor nanostructures device structure with backside contact

Integrated circuit device

Semiconductor device

Topology selective and sacrificial silicon nitride layer for genera...

Selective etching method and semiconductor structure manufactured u...

Semiconductor device including plurality of gate fingers with vario...

Tuning gate lengths in multi-gate field effect transistors

Semiconductor device having spacer between contract patterns

Method for auto-aligned manufacturing of a VDMOS transistor, and au...

Semiconductor device and method for manufacturing the same

Integrated circuit device

Semiconductor device and forming method thereof

Semiconductor devices including insulation patterns with different...

Integrated circuit with continuous active region and raised source/...

Source contact formation of MOSFET with gate shield buffer for pitc...

Air gap spacer formation for nano-scale semiconductor devices

Manufacturing method of semiconductor device using gate-through imp...

Method of forming backside power rails

Patents Applicationslast 30 patents

REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS

VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT...

SEMICONDUCTOR POWER DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

Contact Structures for Dual-Thickness Active Area SOI FETS

SEMICONDUCTOR DEVICE STRUCTURE WITH GATE SPACER AND METHOD FOR FORM...

TRANSISTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE WITH ENHANCED PLACEHOLDER POSITION MARGIN

INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF

STACKED TRANSISTOR CHANNEL REGIONS AND METHODS OF FORMING THE SAME

MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS

SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND MANUFACTURING METHOD T...

SEMICONDUCTOR DEVICES

CONDUCTIVE CONTACT OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTU...

FIELD EFFECT TRANSISTOR WITH DUAL LAYER ISOLATION STRUCTURE AND METHOD

INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACER LINERS

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER

SEMICONDUCTOR DEVICE