characterised by the proximity or the relative position of the source or drain electrode and the gate electrode

Industry

CPC
H01L29/41775

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/41775characterised by the proximity or the relative position of the source or drain electrode and the gate electrode

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
High electron mobility transistor device
- Patent number 12,176,403
- Issue date Dec 24, 2024
- United Microelectronics Corp.
- Chi-Hsiao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET and method for manufacturing the same
- Patent number 12,176,406
- Issue date Dec 24, 2024
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device with element isolation area
- Patent number 12,170,316
- Issue date Dec 17, 2024
- Kabushika Kaisha Toshiba
- Akira Yoshioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor structure and manufacturing method
- Patent number 12,166,070
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jifeng Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2D channel transistors with low contact resistance
- Patent number 12,166,079
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including spacer structure for transistors
- Patent number 12,159,912
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance
- Patent number 12,148,800
- Issue date Nov 19, 2024
- Samsung Electronics Co., Ltd.
- Sahwan Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact structures with stacked metal silicide layers for...
- Patent number 12,148,807
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Hung Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with wraparound backside amorphous layer
- Patent number 12,148,805
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Chuan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked source-drain-gate connection and process for forming such
- Patent number 12,148,806
- Issue date Nov 19, 2024
- Intel Corporation
- Ehren Mannebach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-sheet-based devices having inner spacer structures or gate por...
- Patent number 12,148,812
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,148,671
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit multi-gate transistors structure with gate via a...
- Patent number 12,142,651
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tze-Liang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a capping pattern
- Patent number 12,142,652
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Seon-Bae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including separation pattern penetrating gate...
- Patent number 12,132,046
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Ho-Jun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices and methods of manufacturing thereof
- Patent number 12,133,391
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a contact to source/drain layers and f...
- Patent number 12,131,990
- Issue date Oct 29, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having substantially parallelepiped-shaped insulatin...
- Patent number 12,125,899
- Issue date Oct 22, 2024
- STMicroelectronics (Rousset) SAS
- Arnaud Regnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconducting metal oxide transistors having a patterned gate and...
- Patent number 12,125,921
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yong-Jie Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate contacts and methods of forming the same
- Patent number 12,119,259
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,113,108
- Issue date Oct 8, 2024
- Samsung Electronics Co., Ltd.
- Dohee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to create air gaps
- Patent number 12,112,980
- Issue date Oct 8, 2024
- Lam Research Corporation
- Patrick A. Van Cleemput
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact positioning under power rail
- Patent number 12,107,132
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor device having a barrier layer wit...
- Patent number 12,100,756
- Issue date Sep 24, 2024
- United Microelectronics Corp.
- Hao-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,094,940
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Doohyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,094,934
- Issue date Sep 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,087,823
- Issue date Sep 10, 2024
- Kabushiki Kaisha Toshiba
- Yosuke Kajiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device interconnects and methods of formation
- Patent number 12,087,832
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Chih Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,087,833
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Heon Bok Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429297
- Publication date Dec 26, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE BOTTOM SEED LAYER FORMATION FOR BOTTOM-UP EPITAXY
- Publication number 20240429313
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Cheng Shiau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR WITH FORKED SEMICONDUCTOR STR...
- Publication number 20240429235
- Publication date Dec 26, 2024
- Intel Corporation
- Bilal Chehab
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE
- Publication number 20240429274
- Publication date Dec 26, 2024
- IMEC vzw
- Geert Hellings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE-BASED DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240429295
- Publication date Dec 26, 2024
- XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD.
- Dongpo CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240429296
- Publication date Dec 26, 2024
- ROHM CO., LTD.
- Shinya TAKADO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO CREATE AIR GAPS
- Publication number 20240429091
- Publication date Dec 26, 2024
- LAM RESEARCH CORPORATION
- Patrick A. Van Cleemput
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20240421070
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Sunjung LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...
- Publication number 20240421201
- Publication date Dec 19, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240413204
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Jeewoong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413216
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Doohyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC FEATURES FOR PARASITIC CAPACITANCE REDUCTION
- Publication number 20240413244
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413203
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Chang Min YOE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOBLE FORMATION METHOD OF CMOS FOR 3D STACKED FET WITH BSPDN
- Publication number 20240413213
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FORMATION THROUGH STIMULATION
- Publication number 20240413215
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Jen Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY
- Publication number 20240413221
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240414923
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT STITCHING
- Publication number 20240405085
- Publication date Dec 5, 2024
- Intel Corporation
- Ehren MANNEBACH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240405080
- Publication date Dec 5, 2024
- HiPer Semiconductor Inc.
- YAN LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240405086
- Publication date Dec 5, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Chi-Ren Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405113
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Yang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THEREOF
- Publication number 20240405114
- Publication date Dec 5, 2024
- Huawei Technologies Co., Ltd
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRIMMED CHANNEL REGION AND METHOD OF MAKI...
- Publication number 20240395880
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240395892
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2d Channel Transistors With Low Contact Resistance
- Publication number 20240395870
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mrunal Abhijith KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE TRANSISTOR STRUCTURE WITH ETCH STOP LAYER
- Publication number 20240395881
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tze-Liang LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240387750
- Publication date Nov 21, 2024
- NUVOTON TECHNOLOGY CORPORATION
- Po-An CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMON RAIL CONTACT
- Publication number 20240387655
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240387275
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240387527
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Ho-Jun KIM
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the proximity or the relative position of the source or drain electrode and the gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High electron mobility transistor device

Trench MOSFET and method for manufacturing the same

Nitride semiconductor device with element isolation area

Semiconductor transistor structure and manufacturing method

2D channel transistors with low contact resistance

Gallium nitride transistor with a doped region

Integrated circuit including spacer structure for transistors

Semiconductor device with reduced contact resistance

Backside contact structures with stacked metal silicide layers for...

Semiconductor structure with wraparound backside amorphous layer

Stacked source-drain-gate connection and process for forming such

Nano-sheet-based devices having inner spacer structures or gate por...

Semiconductor devices and methods of manufacturing thereof

Integrated circuit multi-gate transistors structure with gate via a...

Semiconductor device including a capping pattern

Semiconductor device including separation pattern penetrating gate...

Semiconductor memory devices and methods of manufacturing thereof

Semiconductor structure with a contact to source/drain layers and f...

MOS transistor having substantially parallelepiped-shaped insulatin...

Semiconducting metal oxide transistors having a patterned gate and...

Transistor gate contacts and methods of forming the same

Integrated circuit device

Method to create air gaps

Source/drain contact positioning under power rail

High electron mobility transistor device having a barrier layer wit...

Semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device

Semiconductor device interconnects and methods of formation

Semiconductor device and method for fabricating the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SELECTIVE BOTTOM SEED LAYER FORMATION FOR BOTTOM-UP EPITAXY

COMPLEMENTARY FIELD-EFFECT TRANSISTOR WITH FORKED SEMICONDUCTOR STR...

NANOSHEET DEVICE

GALLIUM NITRIDE-BASED DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE

METHOD TO CREATE AIR GAPS

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

DIELECTRIC FEATURES FOR PARASITIC CAPACITANCE REDUCTION

SEMICONDUCTOR DEVICE

NOBLE FORMATION METHOD OF CMOS FOR 3D STACKED FET WITH BSPDN

INNER SPACER FORMATION THROUGH STIMULATION

INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT STITCHING

HIGH ELECTRON MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE WITH TRIMMED CHANNEL REGION AND METHOD OF MAKI...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

2d Channel Transistors With Low Contact Resistance

MULTI-GATE TRANSISTOR STRUCTURE WITH ETCH STOP LAYER

SEMICONDUCTOR DEVICE

COMMON RAIL CONTACT

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME