METHOD OF MANUFACTURING HIGH POWER ARRAY TYPE SEMICONDUCTOR LASER DEVICE

Abstract

A method of manufacturing an array type semiconductor laser device. The method includes forming first and second electrodes on lower and upper surfaces of a wafer comprising a plurality of semiconductor laser arrays having a plurality of laser emission regions, and forming a metal bonding layer on the second electrode of the wafer. The method also includes dicing the wafer into the semiconductor laser arrays and mounting each of the individually separated semiconductor laser arrays on a base with the surface of the metal bonding layer in contact with the base. The method further includes melting the metal bonding layer to fix the mounted semiconductor laser array on the base.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

FIGS. 1 a and 1b are perspective views illustrating a conventional manufacturing process of an array type semiconductor laser device;

FIG. 2( a) to 2(c) are perspective views illustrating the procedures of fabricating a semiconductor laser array in the process of manufacturing an array type semiconductor laser device according to the present invention; and

FIG. 3( a) and 3(b) are sectional views illustrating the bonding procedures in the process of manufacturing the array type laser device according to the present invention.

Claims

1. A method of manufacturing a high power array type semiconductor laser device, comprising: forming first and second electrodes on lower and upper surfaces of a wafer comprising a plurality of semiconductor laser arrays having a plurality of laser emission regions;forming a metal bonding layer on the second electrode of the wafer;dicing the wafer into the semiconductor laser arrays;mounting each of the individually separated semiconductor laser arrays on a base with the surface of the metal bonding layer in contact with the base; andmelting the metal bonding layer to fix the mounted semiconductor laser array on the base.

2. The method according to claim 1, wherein the step of forming the first and second electrodes comprises: depositing the first and second electrodes on lower and upper surfaces of the wafer, respectively; andheat-treating the deposited first and second electrodes.

3. The method according to claim 1, wherein the second electrode is closer to an active region of the laser than the first electrode.

4. The method according to claim 1, wherein the step of forming a metal bonding layer comprises: forming a photoresist pattern having open regions formed apart from the edges of the upper surface of the second electrode;depositing a metal bonding layer in the photoresist pattern; andremoving the photoresist pattern by a lift-off process to form a metal bonding layer apart from the edges of the upper surface of the second electrode.

5. The method according to claim 4, wherein the photoresist pattern is formed with a plurality of the open regions spaced apart in a predetermined interval.

6. The method according to claim 1, wherein the metal bonding layer is made of one selected from the group consisting of In, Pb, Sn, Au, Ag and alloys thereof.

7. The method according to claim 1, wherein the base comprises a ceramic substrate or a metal substrate.