Method of manufacturing insulating target material

Abstract

A method of manufacturing an insulating target material for obtaining an insulating complex oxide film of a general formula AB1-xCxO3, the method including: mixing an oxide of an element A, an oxide of an element B, and an oxide of an element C, subjecting the mixed powder to heat treatment, and pulverizing the resulting product to obtain a first powder; mixing the first powder and a solution including at least one of an Si raw material and a Ge raw material and obtaining a second powder from the mixture of the first powder and the solution; subjecting the second powder to heat treatment and pulverizing the resulting product to obtain a third powder; and subjecting the third powder to heat treatment.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a flowchart showing a method of manufacturing an insulating target material according to one embodiment of the invention.

FIG. 2 is a photograph showing the outward appearance of an insulating target material of Example 1 according to the invention.

FIG. 3 is a photograph of an insulating target material of Comparative Example 1.

Claims

1. A method of manufacturing an insulating target material for obtaining an insulating complex oxide film of a general formula AB1-xCxO3, the method comprising: mixing an oxide of an element A, an oxide of an element B, and an oxide of an element C, subjecting the mixed powder to heat treatment, and pulverizing the resulting product to obtain a first powder;mixing the first powder and a solution including at least one of an Si raw material and a Ge raw material and obtaining a second powder from the mixture of the first powder and the solution;subjecting the second powder to heat treatment and pulverizing the resulting product to obtain a third powder; andsubjecting the third powder to heat treatment.

2. The method of manufacturing an insulating target material as defined in claim 1, wherein the element A is at least one element selected from Pb, Bi, Sr, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu;wherein the element B is at least one element selected from Zr, Ti, V, Bi, W, and Hf; andwherein the element C is at least one element selected from Nb and Ta.

3. The method of manufacturing an insulating target material as defined in claim 2, wherein the element A includes at least Pb;wherein the element B is Zr and Ti; andwherein the element C is at least one of Nb and Ta.

4. The method of manufacturing an insulating target material as defined in claim 1, wherein the solution includes at least one of the Si raw material and the Ge raw material in an amount of 2 to 10 mol %.

5. The method of manufacturing an insulating target material as defined in claim 1, wherein the mixed powder is subjected to the heat treatment at 900 to 1000° C.

6. The method of manufacturing an insulating target material as defined in claim 1, wherein the second powder is subjected to the heat treatment at 900 to 1000° C.

7. The method of manufacturing an insulating target material as defined in claim 1, wherein the third powder is subjected to the heat treatment at 1000 to 1500° C.