Number | Date | Country | Kind |
---|---|---|---|
1-34140 | Feb 1989 | JP | |
1-74229 | Mar 1989 | JP | |
1-74230 | Mar 1989 | JP | |
1-142470 | Jun 1989 | JP | |
1-259393 | Oct 1989 | JP | |
1-302862 | Nov 1989 | JP |
This application is a divisional of U.S. patent application Ser. No. 07/790,107, filed Nov. 7, 1991, now U.S. Pat. No. 6,235,563 which is a continuation of Ser. No. 07/479,396, filed Feb. 13, 1990, now abandoned, each of which is incorporated herein in its entirety by reference.
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3883372 | Lin | May 1975 | A |
4129463 | Cleland et al. | Dec 1978 | A |
4214918 | Gat et al. | Jul 1980 | A |
4249957 | Koliwad et al. | Feb 1981 | A |
4292091 | Togei | Sep 1981 | A |
4314595 | Yamamoto et al. | Feb 1982 | A |
4377605 | Yamamoto | Mar 1983 | A |
4432809 | Chye et al. | Feb 1984 | A |
4448632 | Akasaka | May 1984 | A |
4460417 | Murase et al. | Jul 1984 | A |
4471523 | Hu | Sep 1984 | A |
4514895 | Nishimura | May 1985 | A |
4552595 | Hoga | Nov 1985 | A |
4565584 | Tamura et al. | Jan 1986 | A |
4581814 | Celler et al. | Apr 1986 | A |
4597160 | Ipri | Jul 1986 | A |
4597804 | Imaoka | Jul 1986 | A |
4693759 | Noguchi et al. | Sep 1987 | A |
4751196 | Pennell et al. | Jun 1988 | A |
4772486 | Ishihara et al. | Sep 1988 | A |
4814292 | Sasaki et al. | Mar 1989 | A |
4851370 | Doklan et al. | Jul 1989 | A |
4868140 | Yonehara | Sep 1989 | A |
4905072 | Komatsu et al. | Feb 1990 | A |
Number | Date | Country |
---|---|---|
3241959 | May 1983 | DE |
0 261 666 | Mar 1988 | EP |
0 296 747 | Dec 1988 | EP |
2131407 | Jun 1984 | GB |
56-158431 | Dec 1981 | JP |
58-79718 | May 1983 | JP |
63-10573 | Jan 1988 | JP |
63-42112 | Feb 1988 | JP |
2-81421 | Mar 1990 | JP |
Entry |
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P. Kwizera, et al., “Annealing Behavior of Thin Polycrystalline Silicon Films Damaged by Silicon Ion Implantation in the Critical Amorphization Range”, Thin Solid Films, vol. 100, pp. 227-233 (1983). |
G. N. Parsons, et al., “Defects in a-Si:H Films Produced by Remote Plasma Enhanced Chemical Vapor Deposition”, Journal of Non-Crystalline Solids, vol. 107, pp. 295-300 (1989). |
N. Sax and R. Lewis, Sr., Hawley's Condensed Chemical Dictionary, 11th Ed. (1987) Van Nostrand Reinhold Co., pp. 562, 563, 164. |
T. Noguchi, et al, “Low Temperature Polysilicon Super-Thin-Film Transistor (LFST)”, Japanese Journal of Applied Physics, vol. 25(2), pp. L121-L123 (Feb. 1986). |
A. C. Ipri, et al., “Polysilicon Transistors Fabricated on Plasma-Deposited Amorphous Silicon”, IEEE Transactions on Electron Devices, vol. 35(5), pp. 708-710 (May 1988). |
P. Kwizera et al., “Solid Phase Epitaxial Recrystallization of Thin Polysilicon Films Amorphized By Silicon Ion Implantation”, Applied Physics Letters, vol. 41(4), pp. 379-381, Aug. 15, 1982 (Including vol./No. content page). |
Number | Date | Country | |
---|---|---|---|
Parent | 07/479396 | Feb 1990 | US |
Child | 07/790107 | US |