Claims
- 1. A method of manufacturing a semiconductor substrate, comprising the steps of:forming a laminated substrate by bonding a substrate having a single crystal silicon region and an insulating film formed thereon with a silicon substrate through said insulating film, said laminated substrate having non-contact portions where said insulating film does not contact said silicon substrate at an outer peripheral portion; and removing an outer peripheral portion of said single crystal silicon region, so as to expose an outer peripheral portion of said insulating film, and entirely removing said exposed outer peripheral portion of said insulating film, so as to expose an upper surface of an outer peripheral portion of said silicon substrate; whereby said non-contact portions at said outer peripheral portion of said laminated substrate disappear.
- 2. The method of manufacturing a semiconductor substrate according to claim 1, wherein said method further comprises the step of thermally oxidizing said laminated substrate, so that a silicon oxide film is formed on said exposed upper surface of said outer peripheral portion of said silicon substrate.
Priority Claims (2)
Number |
Date |
Country |
Kind |
5-160018 |
Jun 1993 |
JP |
|
6-121146 |
Jun 1994 |
JP |
|
Parent Case Info
This application is a continuation of application Ser. No. 08/642,412 filed May 3, 1996, now abandoned, which is a continuation of application Ser. No. 08/253,164 filed Jun. 2, 1994, which is now abandoned.
US Referenced Citations (7)
Continuations (2)
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Number |
Date |
Country |
Parent |
08/642412 |
May 1996 |
US |
Child |
08/914226 |
|
US |
Parent |
08/253164 |
Jun 1994 |
US |
Child |
08/642412 |
|
US |