Number | Name | Date | Kind |
---|---|---|---|
4173766 | Hayes | Nov 1979 | A |
5168334 | Mitchell et al. | Dec 1992 | A |
5349221 | Shimoji | Sep 1994 | A |
5644533 | Lancaster et al. | Jul 1997 | A |
5877050 | Gardener et al. | Mar 1999 | A |
5966603 | Eitan | Oct 1999 | A |
6001709 | Chuang et al. | Dec 1999 | A |
6030871 | Eitan | Feb 2000 | A |
Entry |
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“A True Single-Transistor Oxide-Nitride-Oxide EEPROM Device,” T.Y. Chan, et al., IEEE Electron Device Letters, vol. EDL 8, No. 3, Mar. 1987. |
“An Electrically Alterable Nonvolatile Memory Cell Using a Floating-Gate Structure,” Daniel C. Guterman, et al., IEEE Transactions on Electron Devices, vol. ED-26, No. 4, Apr. 1979. |