Method of monitoring current probe transformer temperature

Information

  • Patent Grant
  • 6817760
  • Patent Number
    6,817,760
  • Date Filed
    Monday, September 22, 2003
    20 years ago
  • Date Issued
    Tuesday, November 16, 2004
    19 years ago
Abstract
A current probe transformer temperature monitoring method determines an initial transformer temperature of the current probe as a function of the winding resistance of the transformer. A relative temperature of the Hall Effect device is also determined as a function of resistance change of the Hall Effect device. The initial transformer temperature and the relative Hall Effect device temperature are combined to produce a continuous transformer temperature indicative of the temperature of the transformer. The current signal to the multi-turn winding is removed when the continuous transformer temperature exceeds a threshold temperature value and a visual indication may be provided.
Description




BACKGROUND OF THE INVENTION




Transformer heating in current probes has always been a problem with respect to the customer's safety and the probe's reliability. Measuring higher currents at higher frequencies continues to push the envelope on what probes/amplifiers can provide. In the past, derating curves have been used to indicate the safe operating areas of the probe but could not detect situations in which a customer was exceeding the derating curves. The ability to constantly measure and monitor the temperature of the transformer allows control of the maximum temperatures that the probe can reach and limit potential damage to the probe as well as safety issues for customers. The below described invention disclosures a method for monitoring the transformer temperature in current probes.




SUMMARY OF THE INVENTION




Accordingly, the present invention is a method of monitoring the temperature of a transformer winding in a current probe. The current probe includes a magnetic core having a multi-turn winding disposed there-around forming a probe transformer. A Hall Effect device is disposed within the magnetic core for generating a differential output signal for producing a current signal through the multi-turn winding. The current probe transformer temperature monitoring method determines an initial transformer temperature of the current probe as a function of the winding resistance of the transformer. A relative temperature of the Hall Effect device is also determined as a function of resistance change of the Hall Effect device. The initial transformer temperature and the relative Hall Effect device temperature are combined to produce a continuous transformer temperature indicative of the temperature of the transformer. The current signal to the multi-turn winding is removed when the continuous transformer temperature exceeds a threshold temperature value and a visual indication may be provided.




The initial transformer temperature determining step includes the steps of storing the thermal coefficient of copper, α, an initial transformer temperature, T


0


, and a termination resistance, R


termination


, in memory. Digital values representative of an input voltage, Vin, to the multi-turn winding and an output voltage, Vout, from the multi-turn winding are generated and an initial probe resistance, R


0


, is calculated using the termination resistance and the digital values of the input and output voltages. The initial transformer temperature, T


probe


, is calculated using the function:







T
probe

=


T
0

+


1
α



(




R
termination



(

Vin
-
Vout

)


-


R
0


Vout




R
0


Vout


)













The relative temperature of the Hall Effect device determining step includes the steps of storing a thermal coefficient of resistance value of the Hall Effect device, α


H


, a Hall Effect device bias voltage source value, V


Bias+


, and a resistance bias value, R


Bias


, in memory. A digital value representative of a voltage, V


Hall+


, across the Hall Effect device is generated and an initial Hall Effect device resistance value, R


Hall


, calculated using the function:







R
Hall

=

(


2
×

V

Hall
+




R
Bias




V

Bias
+


-

V

Hall
+




)











and stored in memory as R


Hall Init.


. Additional digital values representative of the voltage, V


Hall+


are generated and Hall Effect resistance values, R


Hall


, representing changes in the resistance of the Hall Effect device as a function of temperature are calculated. Changes in temperature of the Hall Effect device, ΔT


probeHall


, are calculated using the function:







Δ






T
probeHall


=


1

α
H




(



R
Hall

-

R

Hall






Init
.





R

Hall






Init
.




)












temperature value.




Alternately, the first order equation may be modified to include first and second order terms, k


1


and k


2


, to increase the accuracy of the change in temperature calculation.






Δ


T




probeHall




=k




1


(


R




Hall




−R




Hall Init.


)+


k




2


(


R




Hall




−R




Hall Init.


)


2








The objects, advantages and novel features of the present invention are apparent from the following detailed description when read in conjunction with appended claims and attached drawings.











BRIEF DESCRIPTION OF THE DRAWING FIGURES





FIG. 1

is a representative schematic diagram of the probe transformer and termination resistance forming a voltage divider network in a current probe incorporating the method of monitoring current probe transformer temperature according to the present invention.





FIG. 2

is a representative schematic diagram of the Hall Effect device and Hall bias source resistor forming a voltage divider network in a current probe incorporating the method of monitoring current probe transformer temperature according to the present invention.





FIG. 3

is a block diagram of a current probe incorporating the method of monitoring current probe transformer temperature according to the present invention.











DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT




A first measurement uses the winding resistance of the probe transformer as an indication of the transformer temperature. The probe transformer resistance and termination resistance, as shown in

FIG. 1

, form a voltage divider. With a known termination resistance, R


termination


, Vin and Vout, R


probe


can be calculated. This resistance is directly related to the wire temperature. For example, with copper, α, the thermal coefficient of resistance, is ˜0.38% per degree C. With an initial probe resistance, R


0


, at an initial temperature of T


0


, the temperature of the probe transformer, T


probe


, can be calculated as follows:










T
probe

=


T
0

+


1
α



(




R
termination



(

Vin
-
Vout

)


-


R
0


Vout




R
0


Vout


)







(
1
)













A second measurement takes advantage of the thermal properties of a Hall device. As the temperature of the Hall device increases, the resistance of the device, R


Hall


, decreases, see FIG.


2


. By measuring the voltage across the Hall device, two times V


Hall+


, R


Hall


can be calculated.










R
Hall

=

(


2
×

V

Hall
+




R
Bias




V

Bias
+


-

V

Hall
+




)





(
2
)













With an initial Hall device resistance, R


Hall Init


, at a specific temperature, T


probe


, and a thermal coefficient of resistance of the Hall device, α


H


(% per degree C.), the change in temperature can be calculated as follows:










Δ






T
probeHall


=


1

α
H




(



R
Hall

-

R

Hall






Init
.





R

Hall






Init
.




)






(
3
)













Due to Hall device characteristic variations, this measurement is best used for relative temperature changes only.




Alternately, the first order equation (3) may be modified to include first and second order terms, k


1


and k


2


, to increased accuracy of the change in temperature calculation. The first and second order terms, k


1


and k


2


, are empirically derived by measuring the Hall Effect device resistance over a range of temperatures. The values of the first and second order terms will vary depending on the manufacturer of the Hall Effect device.






Δ


T




probeHall




=k




1


(


R




Hall




−R




Hall Init.


)+


k




2


(


R




Hall




−R




Hall Init.


)


2


  (4)






Using the results of the calculations above that establish the absolute temperature of the transformer, T


probe


, and the relative temperature measurement based on the Hall device resistance, ΔT


probe Hall


, the continuous temperature of the transformer can be monitored.








T




probe continuous




=T




probe




+ΔT




probe Hall


  (5)






The combination of these two measurements provide a means to accurately and constantly measure the temperature of the probe's transformer. Because the transformer winding resistance is calculated when the current through the transformer is known and constant during the Vin and Vout measurements, it is not useful during normal operation of the probe, However, this method can be used during the self-calibration routine (that must be run with no input signal) to determine the transformer temperature. The Hall sensor resistance R


Hall Init


, can also be calculated during this routine, Since the Hall resistance can be calculated during normal operation, the temperature of the transformer may always be determined. The system can then react to the overheating of the transformer by shutting down the circuit and/or giving the user feedback via a visual or audio indicator.





FIG. 3

illustrates a simplified AC/DC current probe system


10


having a current probe


12


with a split core


14


of magnetic material defining an aperture


16


through which a conductor


18


carrying a current to be measured extends. A multi-turn winding


20


is wrapped around one leg of the core


14


forming a probe transformer. A thin film semiconductor Hall Effect device


22


is disposed within the magnetic core


14


. A bias source


24


housed in a current probe amplifier


26


provides power for the Hall Effect device


22


via resistor


23


and


25


and a multi-conductor cable


28


coupled to a connector on the front panel


60


of the current probe amplifier


26


. The Hall Effect device


22


provides a differential input signal to a Hall pre-amplifier


30


in the current probe amplifier


26


via the multi-conductor cable


28


. The output of the Hall pre-amplifier


30


is coupled through switch


33


and applied to a power amplifier


32


that is provided with a feedback resistor


34


. The output of the power amplifier


32


is connected via the multi-conductor cable


28


to one end of the multi-turn winding


20


and the opposite end of the winding


20


is connected via the multi-conductor cable


28


to an AC/DC switching circuit


36


. The switching circuit


36


has input and output switches


38


and


40


that either directly couples the current signal from the current probe


12


to the output terminal


42


of the current probe amplifier


26


or AC couples the signal to the output terminal


42


of the current probe amplifier


26


. The AC coupling circuit has a DC terminating shunt resistor


44


coupled to receive the current input from the current probe


12


. The DC terminating shunt resistor


44


is coupled in series with a high inductive value synthesized inductor


46


. The synthesized inductor


46


is preferably an operational amplifier


48


having its inverting input node directly coupled to the output node of the amplifier. The DC terminating shunt resistor


44


is coupled to the inverting input node of the amplifier


48


. The non-inverting node of the operation amplifier


48


is coupled to the junction between a shunt capacitor


50


that is coupled in parallel with the shunt resistor


44


and the synthesized inductor


46


and a termination resistor


52


. The other end of the shunt capacitor


50


is coupled to receive the input from the current probe


12


. The current signal is coupled through coupling capacitor


54


to the output switch


40


. The output switch


40


is coupled to the output terminal


42


, which in turn is coupled via a coaxial cable


56


to the input of a measurement test instrument


58


, such as an oscilloscope or the like. The coaxial cable


56


includes a TekProbe-BNC interface, manufactured and sold by Tektronix, Inc., Beaverton, Oreg. providing a serial bus from the measurement instrument


58


to the current probe amplifier


26


.




The current probe amplifier


26


includes a front panel


60


having buttons, knob, LEDs and the like for controlling the operation of the amplifier and connectors for coupling the current probe


12


and measurement test instrument


58


to the amplifier


26


. The front panel circuitry is coupled via controller bus


62


to the a controller


64


. The controller bus


62


is also coupled to memory


66


that store parameter values and program instruction executed by the controller


64


. The memory


66


may be separate RAM and ROM semiconductor devices or a part of the controller


64


. The controller bus


62


is also coupled to an analog-to-digital converter (ADC)


68


that is coupled to the output of the power amplifier


32


. The controller bus is coupled to a second ADC


70


that is coupled to the positive bias output of the Hall bias source


24


. The controller bus is coupled to a third ADC


72


that is coupled to the output of the current probe amplifier


26


. The front panel


60


includes buttons, knob, LEDs and the like for controlling the operation of the amplifier and has connectors for coupling the current probe


12


and measurement test instrument


58


to the amplifier


26


. Depressing the appropriate buttons on the current probe amplifier


26


apply signals to a controller


64


that selectively couple the DC or AC signal path between the input and output of the current probe amplifier


26


and the current probe transformer temperature measurement system.




The resistance of the current probe windings


20


R


0


is measured at an arbitrary temperature, which in the preferred embodiment is 23° C. and stored in memory


66


as well as the thermal coefficient of resistance for copper, the thermal coefficient of resistance of the Hall device, the voltage of V


Bias+


, the R


Bias


resistance, and the termination resistance R


termination


. The controller


64


executes routines stored in memory


66


to determine the temperature of the probe transformer using equation 1. The probe transformer temperature and the Hall sensor resistance is calculated during a degaussing progress initiated by the user from the front panel


60


. The termination resistance R


termination


is the value of the termination resistor in the measurement instrument, which in the preferred embodiment is 50 ohms. The ADC


68


converts the Vin voltage at the input of the winding


20


to a digital value for processing by the controller


64


. The ADC


72


converts the Vout voltage at the input of the winding


20


to a digital value for processing by the controller


64


. The calculated temperature of the probe is stored in memory


66


.




The controller


64


further executes routines stored in memory


66


to determine the resistance of the Hall device using equation 2. The ADC


70


converts the V


Hall+


voltage at the Hall device


22


to a digital value for processing by the controller


64


. The controller


64


processes the acquired and stored data and generates a resistance value R


Hall


that is stored in memory


66


as R


Hall Init


. The controller


64


executes routines stored in memory


66


to continuously monitor the temperature of the Hall device acquiring digital data samples of the V


Hall+


voltage and executing equation 3. The controller


64


executes additional routines stored in memory


66


to continuously calculate the temperature of probe transformer using equation 4. If the temperature of the probe transformer exceeds a threshold value stored in memory


66


, the controller


64


initiates a command the cause switch


33


to open and disconnect the Hall device output from the power amplifier


32


. This prevents current from flowing through the probe transformer windings


20


. The controller


64


further initiates a signal to an LED on the front panel


60


that causes the LED to flash to indicate to the user that the probe transformer has exceeded the safe temperature limit.




The present invention has been described with a current probe amplifier


26


having memory


66


that stores constants, variables and executable routines that implement the current probe transformer temperature monitoring method. The current probe amplifier


26


may also use the serial bus associated with the coaxial cable


56


to download executable routines and constants from the measurement instrument


58


.




It will be obvious to those having skill in the art that many changes may be made to the details of the above-described embodiments of this invention without departing from the underlying principles thereof. The scope of the present invention should, therefore, be determined only by the following claims.



Claims
  • 1. A method of monitoring the temperature of a transformer winding in a current probe wherein the current probe includes a magnetic core having a multi-turn winding disposed there-around forming a probe transformer and a Hall Effect device disposed within the magnetic core for generating a differential output signal for producing a current signal through the multi-turn winding, the method comprising:determining an initial transformer temperature of the current probe as a function of the winding resistance of the transformer; determining a relative temperature of the Hall Effect device as a function of resistance change of the Hall Effect device; and combining the initial transformer temperature and the relative Hall Effect device temperature to produce a continuous transformer temperature indicative of the temperature of the transformer.
  • 2. The method of monitoring the temperature of a transformer winding in a current probe as recited in claim 1 further comprising the step of removing the current signal from the multi-turn winding when the continuous transformer temperature exceeds a threshold temperature value.
  • 3. The method of monitoring the temperature of a transformer winding in a current probe as recited in claim 2 further comprising the step of providing a visual indication when the continuous transformer temperature exceeds a threshold temperature value.
  • 4. The method of monitoring the temperature of a transformer winding in a current probe as recited in claim 1 wherein the initial transformer temperature determining step further comprises the steps of:storing the thermal coefficient of copper, α, an initial transformer temperature, T0, and a termination resistance, Rtermination, in memory; generating digital values representative of an input voltage, Vin, to the multi-turn winding and an output voltage, Vout, from the multi-turn winding; calculating an initial probe resistance, R0, using the termination resistance and the digital values of the input and output voltages; and calculating the initial transformer temperature, Tprobe, using the function Tprobe=T0+1α⁢(Rtermination⁡(Vin-Vout)-R0⁢VoutR0⁢Vout).
  • 5. The method of monitoring the temperature of a transformer winding in a current probe as recited in claim 1 wherein the relative temperature of the Hall Effect device determining step further comprises the steps of:storing a thermal coefficient of resistance value of the Hall Effect device, αH, a Hall Effect device bias voltage source value, VBias+, and a resistance bias value, RBias, in memory; generating a digital value representative of a voltage, VHall+, across the Hall Effect device; calculating an initial Hall Effect device resistance value, RHall, using the function RHall=(2×VHall+⁢RBiasVBias+-VHall+) and storing the resistance value in memory as RHall Init.; generating additional digital values representative of the voltage, VHall+ and calculating Hall Effect resistance values, RHall, representing changes in the resistance of the Hall Effect device as a function of temperature; and calculating changes in temperature of the Hall Effect device, ΔTprobeHall, using the function Δ⁢ ⁢TprobeHall=1αH⁢(RHall-RHall⁢ ⁢Init.RHall⁢ ⁢Init.).
  • 6. The method of monitoring the temperature of a transformer winding in a current probe as recited in claim 1 wherein the relative temperature of the Hall Effect device determining step further comprises the steps of:storing first and second thermal coefficient of resistance values of the Hall Effect device, k1 and k2, a Hall Effect device bias voltage source value, VBias+, and a resistance bias value, RBias, in memory; generating a digital value representative of a voltage, VHall+, across the Hall Effect device; calculating an initial Hall Effect device resistance value, RHall, using the function RHall=(2×VHall+⁢RBiasVBias+-VHall+) and storing the resistance value in memory as RHall Init.; generating additional digital values representative of the voltage, VHall+ and calculating Hall Effect resistance values, RHall, representing changes in the resistance of the Hall Effect device as a function of temperature; and calculating changes in temperature of the Hall Effect device, ΔTprobeHall, using the function ΔTprobeHall=k1(RHall−RHall Init.)+k2(RHall−RHall Init.)2.
CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of the U.S. Provisional Application No. 60/428,649, filed Nov. 22, 2002.

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Provisional Applications (1)
Number Date Country
60/428649 Nov 2002 US