A 4MB 5V-Only Flash EEPROM With Sector Erase by Stiegler et al., 1990, IEEE Symposium on VLSI Circuits, CH2885-2/90/0000-0103. |
A 5-Volt Contactless Array 256 Kbit Flash EEPROM Technology by Gill et al., 1988, IEDM, CH2528-8/88/0000-0428. |
A 5-V Only 256K Bit CMOS Flash EEPROM by D'Arrigo et al., 1989 IEEE International Solid-State Circuits Conference, 0193-6530/89/000-0132, Session 10, THAM 10.3. |
ATMEL Corp. AT29C256 (265K (32K.times.8)5 Volt Only CMOS PEROM) preliminary device description. |
Flash Memory by Walt Lahti, In-Stat Inc. |
A New Flash E.sup.2 PROM Cell Using Triple Polysilicon Technology by Masuoko et al., 1984, IEDM, CH2099-0/84/0000-0464, Section 17.3. |
A Single Transistor EEPROM Cell and Its Implementation in a 512K CMOS EEPROM by Mukherjee et al., 1985, IEEE, CH2552-5/85/0000-0616, section 26.1. |
A 128K Flash EEPROM Using Double Polysilicon Technology by Samachisa et al., 1987, IEEE International Solid-State Circuits Conference, session VII, WPM 7.4. |
An In-System Reprogrammable 256K CMOS Flash Memory by Kynett et al., 1988, IEEE International Solid-State Circuits Conference, session X, THAM 10.7. |
A 90ns Look Erase/Program Cycle Megabit Flash Memory by Kynett et al., 1989, IEEE International Solid-State Circuits Conference, session X, THAM 10.7. |
1024 K (128K.times.8)CMOS Flash Memory, Apr. 1990, INTEl Corp., 28F010. |