Claims
- 1. A semiconductor device comprising:
- an insulating layer;
- a patterned conductive layer on the insulating layer;
- a semiconductor layer on said patterned conductive layer; and
- a reactive layer formed by reacting said patterned conductive layer with growth nuclei on said patterned conductive layer between said patterned conductive layer and said semiconductor layer, said growth nuclei containing at least one element of group IIIb, group IV, group Vb and group VIIb at least that does not constitute said patterned conductive layer and said insulating layer, wherein said semiconductor layer is grown selectively on said patterned conductive layer wherever said reactive layer is provided.
Priority Claims (2)
Number |
Date |
Country |
Kind |
5-330661 |
Dec 1993 |
JPX |
|
6-049528 |
Mar 1994 |
JPX |
|
Parent Case Info
This is division of Application Ser. No. 08/407,957, filed Mar. 22, 1995, U.S. Pat. No. 5,620,924, which is a division of Application Ser. No. 08/297,155, filed Aug. 29, 1994, U.S. Pat. No. 5,429,983.
US Referenced Citations (5)
Divisions (2)
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Number |
Date |
Country |
Parent |
407957 |
Mar 1995 |
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Parent |
297155 |
Aug 1994 |
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