Claims
- 1. A method for producing a semiconductor device wherein a patterned transparent electrode, a patterned amorphous silicon semiconductor layer and a patterned backside electrode are formed on a substrate sequentially in this order, characterized in that the patterning of at least one of the amorphos silicon semiconductor layer and the backside electrode is carried out in a step of forming at least one of the amorphous silicon semiconductor layer and the backside electrode with a wire mask having a plurality of non-intersecting wires, each of said wires having a diameter of 0.08 mm to 2.0 mm and, each of said wires being brought into substantially close contact with a surface subjected to film forming and step of removing a thin film formed at a region between the wire mask and the surface subjected to film forming in the forming step by non-selectively reducing the thickness of the formed layer.
- 2. The method of claim 1, wherein means employed in the removing step is etching.
- 3. The method of claim 2, wherein the etching is wet etching.
- 4. The method of claim 3, wherein an etching liquid used in the etching of the amorphous silicon semiconductor layer is an aqueous solution of KOH or NaOH.
- 5. The method of claim 3, wherein the backside electrode is made of Al and an etching liquid is selected from a group consisting of liquid mixture of phosphoric acid, acetic acid, nitric acid and pure water; diluted hydrochloric acid; aqueous solution of KOH; and liquid mixture of ferric chloride, concentrated hydrochloric acid and pure water.
- 6. The method of claim 3, wherein the backside electrode is made of Cr and an etching liquid is liquid mixture of ammonium cerium (IV) nitrate, perchloric acid and pure water.
- 7. The method of claim 3, wherein the backside electrode is made of Ag and an etching liquid is selected from a group consisting of liquid mixture of chromic acid anhydride, concentrated sulfuric acid and pure water; aqueous solution of ferric nitrate; liquid mixture of aqueous ammonia and aqueous solution of hydrogen peroxide; and diluted nitric acid.
- 8. The method of claim 3, wherein the backside electrode has a double-layer construction of Cr and Al and an etching liquid is selected from a group consisting of liquid mixture of phosphoric acid, acetic acid, nitric acid and pure water; diluted hydrochloric acid; aqueous solution of KOH; liquid mixture of ferric chloride, concentrated hydrochloric acid and pure water; liquid mixture of ammonium cerium (IV) nitrate, perchloric acid and pure water; diluted hydrochloric acid; and diluted sulfuric acid.
- 9. The method of claim 3, wherein the backside electrode has a double-layer construction of Ag and Al and an etching liquid is selected from a group consisting of liquid mixture of phosphoric acid, acetic acid, nitric acid and pure water; diluted hydrochloric acid; aqueous solution of KOH; liquid mixture of ferric chloride, concentrated hydrochloric acid and pure water; liquid mixture of chromic acid anhydride, concentrated sulfuric acid and pure water; aqueous solution of ferric nitrate; liquid mixture of aqueous ammonia and aqueous solution of hydrogen peroxide; and diluted nitric acid.
- 10. The method of claim 2, wherein the etching is dry etching.
- 11. The method of claim 10, wherein the dry etching is plasma etching.
- 12. The method of claim 1, wherein means employed in the removing step is reverse sputtering.
Priority Claims (1)
Number |
Date |
Country |
Kind |
63-52075 |
Mar 1988 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 318,209 filed Mar. 3, 1989, now abandoned.
US Referenced Citations (7)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0170554 |
Oct 1982 |
JPX |
0025738 |
May 1983 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Ghandhi, S., VLSI Fabrication Principles, pp. 499, 525-526, Wiley & Sons, 1983. |
Continuations (1)
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Number |
Date |
Country |
Parent |
318209 |
Mar 1989 |
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