Claims
- 1. A method of producing a microscopic structure by ion etching, in which an ion beam emitted by an ion source is irradiated over a workpiece by using a plurality of kinds of resists,
- wherein an angle of incidence of the ion beam relative to the workpiece is changeable,
- etching of an identical layer of the workpiece being repeated while changing the angle of incidence of the ion beam relative to the workpiece each time replacement of the resists is performed, whereby the workpiece has an irregular desired cross-sectional shape.
- 2. A method as claimed in claim 1, wherein the workpiece is formed on a substrate, and after the workpiece formed on substrate has been etched, a further workpiece is formed on the substrate so as to be etched.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2-247713 |
Sep 1990 |
JPX |
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Parent Case Info
This application is a continuation of now abandoned application, Ser. No. 07/757,533, filed Sep. 11, 1991, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (4)
Number |
Date |
Country |
0253066 |
Jan 1988 |
EPX |
2253253 |
Jun 1975 |
FRX |
55-39646 |
Mar 1980 |
JPX |
8900714 |
Jan 1989 |
WOX |
Non-Patent Literature Citations (2)
Entry |
Patent Abstracts of Japan, vol. 6, No. 16 (E-92) Jan. 29, 1982. |
Patent Abstracts of Japan, vol. 14, No. 139 (E-903) Mar. 15, 1990. |
Continuations (1)
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Number |
Date |
Country |
Parent |
757533 |
Sep 1991 |
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