1. Field of the Invention
The present invention relates to gas sensors which detect gas by measuring the change in magnetic properties of a ferromagnetic material.
2. Related Art
Solid materials are either crystalline or amorphous. A crystalline solid is one in which the atomic arrangement is regularly repeated, and which is likely to exhibit an external morphology of planes making characteristic angles with each other. In many materials, there are actually a variety of solid phases, each corresponding to a unique crystal structure. These varying crystal phases of the same substance are called “allotropes” or “polymorphs”. The mechanical, thermal, optical, electronic, and magnetic properties of crystals are strongly influenced by the periodic arrangement of their atomic cores. A nanoscale particle is a particle having a measurement of 100 nm or less in at least one direction.
A crystal may be regarded as a three-dimensional diffraction grating for energetic electromagnetic waves (typically X-rays) of a wavelength comparable with the atomic spacing; the diffraction pattern will provide information about the periodic arrangements of the atoms. Constructive interference of the electromagnetic waves may occur where the following minimum condition (called the Bragg equation) is satisfied:
2d sin θ=nλ
where d is the spacing between crystalline planes, θ is the angle of incidence between the beam of X-rays and the parallel crystalline planes, n is an integer, and λ is the wavelength of the X-rays. This equation will not be satisfied for most angles θ; to investigate crystals of unknown orientation, the rotating crystal method is used, wherein θ is varied as a function of time while X-rays of a single wavelength are presented to a single crystal. A cylinder of photographic film records a spot whenever the Bragg condition is fulfilled.
In the Debye-Scherrer technique, instead of using a single X-ray wavelength and a time-dependent angle of incidence, a crystalline sample is presented with every θ simultaneously. This is achieved by using a finely powdered crystalline sample in which the crystalline orientations are random. Rays for which one crystallite or another satisfy the Bragg condition emerge from the sample as a series of cones concentric with the incident beam direction. Thus a photographic plate records a series of concentric circles. The spacing and pattern of these circles is used to determine the atomic structure of the crystal.
Particle-induced x-ray emission (PIXE) is an analytical technique capable of trace element detection sensitivity of a few parts per million. When ions pass through matter, they interact with the electrons in the atoms and occasionally a vacancy is produced by an excited electron. When this occurs in an inner shell, the vacancy is filled by an electron from an outer shell, and an x-ray photon of characteristic energy is emitted. By measuring the energy of the photon, one can determine the atomic number of the element and the amount of the element present that can be extracted from the area under the x-ray peak. For identification and quantification of trace elements, PIXE is 100 times more sensitive than electron micro-analysis systems.
Mossbauer spectroscopy is a spectroscopic technique based on the Mossbauer effect. In its most common form, Mossbauer Absorption Spectroscopy, a solid sample is exposed to a beam of gamma radiation, and a detector measures the intensity of the beam that is transmitted through the sample. The gamma-ray energy is varied by accelerating the gamma-ray source through a range of velocities with a linear motor. The relative motion between the source and the sample results in an energy shift due to the Doppler effect. In the resulting spectra, gamma-ray intensity is plotted as a function of the source velocity. At velocities responding to the resonant energy levels of the sample, some of the gamma-rays are absorbed, resulting in a dip in the measured intensity and a corresponding dip in the spectrum. The number, positions, and intensities of the dips (also called peaks) provide information about the chemical environment of the absorbing nuclei and can be used to characterize the sample.
In x-ray photoelectron spectroscopy, the sample is illuminated with soft x-radiation in an ultrahigh vacuum. The photoelectric effect leads to the production of photoelectrons, the energy spectrum of which can be determined in a beta-ray spectrometer. The difference between the x-ray photon energy, which is known, and the electron energy, which can be measured, results in the binding energy of the orbital from which the electron was expelled. Measurement of the relative areas of the photoelectron peaks allows the composition of the sample to be determined.
In discussing magnetic fields, the relationship between the magnetic field intensity H and the corresponding magnetic induction B is
where M is the magnetization, χm is the magnetic susceptibility, μm is the relative permeability, μ is the absolute permeability, and μ0=4π×10−7H/m is the permeability of free space.
The magnetic response of most solids is dominated by the orientation of permanent dipoles. The response of a magnetic material is usually expressed in terms of either the magnetization M or the magnetic susceptibility χ, where
M=χH
and
χ=M/H
A spinning charged particle constitutes a magnetic dipole. The magnetic dipole moment of an electron is attributed to its “spin,” and creates a magnetic field pointing in a direction perpendicular to the plane in which the electron is spinning, as shown in
There are four different kinds of magnetic behavior which involve permanent dipoles in a solid, namely paramagnetic, antiferromagnetic, ferromagnetic, and ferrimagnetic. The low temperature ordering, if any, of neighboring dipoles, and the consequent behavior of spontaneous magnetization and/or susceptibility results in hysteresis loops (shown in
Paramagnetic behavior, shown in
χm=C/T
where C is the Curie constant of the solid, and T represents the temperature of the solid.
Antiferromagnetic behavior, shown in
χm=C/(T+θ)
A ferromagnetic solid, represented in
χm=C/(T−Tc)
Ferromagnetism involves the cooperative alignment of permanent atomic dipoles, which arise in atoms having unpaired electrons. The strength of each individual dipole is small, but a completely ordered array of such moments produces a large spontaneous magnetization Ms.
The low temperature ordering in a ferrimagnetic material, as shown in
Hysteresis loops demonstrate a phenomenon wherein a material that did not show any magnetization before the application of a magnetic field exhibits remanent magnetization after the applied magnetic field is removed, as shown in
Oxide semiconductors have been used to detect gases. However, these have all been non-magnetic oxide semiconductors. Their electrical and semiconducting properties (determined by electrical resistivity, carrier concentration, and carrier mobibility) vary with oxygen stoichiometry. Oxygen stoichiometry can be changed by passing a reducing or oxidizing gas. Thus, traditionally, monitoring the changes in the electrical properties with the type and flow rates of gases has been used as a sensing method.
Tin Dioxide, SnO2, is an oxide semiconductor with a wide band gap of ˜3.6 eV. When prepared with oxygen vacancies, SnO2 becomes an n-type semiconductor. When doped with iron (Fe) or cobalt (Co), SnO2 remains an n-type semiconductor. Development of room-temperature ferromagnetism (RTFM) in conventional semiconductors is currently attracting intense interest due to their potential use in spintronics applications. However, most traditional transition metal-doped magnetic semiconductor systems exhibit ferromagnetism only at temperatures that are well below room temperature.
The present invention is a gas sensor that detects the presence of a gas by measuring the change in the magnetic properties of a ferromagnetic material as the gas flows across the material. This detector has been enabled by the invention of a material exhibiting ferromagnetism at room temperature, preferably in powder form. The preferred material is iron-doped tin dioxide.
FIGS. 6(a) and 6(b) show XRD patterns of Sn1-xFexO (prepared at 200° C.), and Sn1-xFexO2 (prepared at 600° C.), respectively, along with reference lines of orthorhombic SnO2 (solid lines, marked “O”), romarchite SnO (dotted lines, marked “R”), cassiterite SnO2 (dashed lines, marked “C”) phases, hematite (marked “H”), and maghemite (marked “M”) phases of Fe2O3.
FIGS. 8(a) and (b) show (a) XRD patterns of 5% Fe-doped samples prepared by annealing the reaction precipitate at different temperatures shown above, along with reference lines of orthorhombic SnO2 (solid lines, marked “O”), romarchite SnO (dotted lines, marked “R”) cassiterite SnO2 (dashed lines, marked “C”) phases, hematite (marked “H”) and maghemite (marked “M”) phases of Fe2O3; (b) Changes in the lattice parameter a and the lattice volume of cassiterite Sn0.95Fe0.05O2 as a function of preparation temperature. The change in the lattice parameter c was minimal.
FIGS. 9(a)-(d) show (a) intensity of the tetragonal cassiterite peak (110) and the orthorhombic fraction x0 of Sn1-xCoxO2 prepared at 600° C. as a function of Co percentage; (b) the particle size of Sn1-xCoxO2 as a function of x calculated from the XRD tetragonal cassiterite peak (110). The particle sizes determined from TEM are marked with stars; (c) changes in the lattice parameters a and c of cassiterite SnO2 as a function of Co percentage. Stars indicate the bulk values of the SnO2 lattice parameters from XRD reference files; (d) changes in the (110) cassiterite peak position with Co concentration. The lattice parameters were calculated using (110) and (202) peaks of the tetragonal cassiterite phase.
FIGS. 10(a) and (b) show diffuse reflectance spectra of Sn1-xCoxO2 samples prepared at 600° C. (a) The changes in the absorption edge with Co concentration; inset in panel (a) shows the changes in the band gap energy estimated from the reflectance data as a function of Co concentration and (b) shows the complete spectra indicating the extent of Co3O4 formation.
FIGS. 11(a)-(c) show (a) Raman spectra of Sn1-xCoxO2 prepared at 600° C. as a function of x; (b) Raman spectra of pure SnO2, 1% Co-doped SnO2 and a physical mixture of pure SnO2 and Co3O4; (c) the apparent disappearance of SnO2 Raman peak at 630 cm−1 and the emergence of the 617 cm−1 peak of Co3O4 for x>0.01.
FIGS. 12(a)-(c) show panels (a) and (b) which show transmission electron microscopy (TEM) images of Sn1-xFexO2 prepared at 600° C. with x=0.01 and 0.05, respectively. Panel (c) shows the TEM image of Sn1-xFexO2 prepared at 200° C. with x=0.05.
FIGS. 13(a) and (b) show panels (a) and (b) which show TEM images of Sn0.95Fe0.05O2 prepared at 350 and 900° C. respectively.
FIGS. 14(a)-(c) show panel (a) which shows the room-temperature Mossbauer spectra of Sn0.95Fe0.05O. Panels (b) and (c) show the room-temperature Mossbauer spectra of Sn0.95Fe0.05O2 prepared at 350 and 600° C., respectively.
FIGS. 18(a) and (b) show (a) XPS spectra of Sn1-xCoxO2 prepared at 600° C. as a function of Co percentage and (b) shows similar data of Co3O4 (x=1) and SnO2 (x=0) reference samples prepared under identical synthesis conditions.
FIGS. 19(a) and (b) show the variation of the atomic percentages of Co, Sn, and O and the Co/Sn ratio as a function of Co concentration calculated using the corresponding XPS peak intensities.
FIGS. 20(a)-(c) show (a) and (c) M vs H data of Sn1-xFexO2 measured at 300 and 5K, respectively; (b) M−χPH as a function of H for the Sn1-xFexO2 samples measured at 300K. Solid lines through the data points in (c) are theoretical fits using the modified Brillouin function for a paramagnetic system.
FIGS. 23(a) and (b) show XRD data collected from separate angular regions for Sn0.95Fe0.05O2 (data points), pure SnO2 (dashed line), and pure Fe2O3, all prepared at 600° C. following identical synthesis procedures. The intensity is plotted on a log scale.
FIGS. 24(a)-(c) show changes in (a) saturation magnetization Ms and lattice volume V, (b) remanence Mr and the linear paramagnetic component χp, and (c) interaction parameter T0 and Curie-Weiss temperature θ (obtained from the paramagnetic component in
FIGS. 31(a) and (b) show M vs H data for Sn1-xFexO samples measured at 5 and 300 K, respectively. Similar M vs H data collected from pure iron oxide (maghemite) prepared under identical conditions (but with no Sn precursors) are also shown. Solid lines through the data points are theoretical fits using the modified Brillouin-function-based form for a paramagnetic system.
FIGS. 32(a)-(c) show (a) the low field region of the room-temperature hysteresis loop of 600° C. prepared Sn0.99Co0.01O2 sample showing a coercivity of 9 Oe; the inset in (a) shows the complete hysteresis loop of 600° C. prepared Sn0.99Cu0.01O2 showing saturation of the sample magnetization expected for a ferromagnetic system; (b) variation of the room-temperature coercivity Hc and remanence Mr of Sn1-xCoxO2 prepared at 350° C. as a function x; inset in (b) shows the expanded view of the low-field region of the hysteresis loop of 350° C. prepared Sn0.995Co0.005O2 sample; and, (c) variation of the saturation magnetization Ms with x of Sn1-xCoxO2 samples prepared at 350 (open circles) and 600° C. (solid stars), and the lattice volume V calculated using the a and c values of
1. The Materials Used in the Gas Sensing Process
The preferred embodiment is a powder comprising an oxide semiconductor that is transition-metal doped; preferably, the semiconductor is SnO2. Impurities from other elements could be present and not significantly affect the magnetic properties of the composition. The invention does not have to be in powder form, as the composition manufactured by the preferred process can be converted into other forms, such as films. In the preferred embodiment, the transition metal is iron (Fe), the doping concentration is between 0.5% and 10%, the Curie temperatures is as high as 850K, the composition takes on a powder form with nanoscale particles of which 95% are believed to be less than 100 nm in length, there are no phases, or clusters of Fe, in the composition, meaning that the Fe is evenly distributed throughout the composition, and the composition is intrinsically ferromagnetic, meaning that the Fe atoms take the place of the Sn atoms in the lattice, and are substitutionally incorporated into the SnO2 lattice at the Sn sites. Preparation conditions have a strong effect on the observed magnetic properties and might act as a useful control parameter.
The preferred embodiment, Sn1-xFexO2, is manufactured by the following preferred process, which is less expensive than other methods of manufacturing ferromagnetic oxide semiconductors. Appropriate amounts of tin dichloride (SnCl2) of minimum 99% purity, iron dichloride (FeCl2) of minimum 99.5% purity, and NH4OH are added to de-ionized water to produce solutions with molarities of 1, 0.02, and SM, respectively. All the samples are prepared by reacting the 0.02M FeCl2 and 1 M SnCl2 solutions at 80° C. {molar ratio of x=[Fe]/([Fe]+[Sn])} with a large amount (˜1.5 times the precursor solution volume) of a SM solution of NH4OH. The resulting precipitate is washed to remove any water-soluble byproducts and annealed in air for three hours at 600° C. to obtain powder samples of Sn1-xFexO2; in the case of the ratios of 0.02 M FeCl2 and 1 M SnCl2 in one embodiment, Sn0.98Fe0.02O2 is obtained. Samples of Sn0.95Fe0.05O2 have also been prepared by annealing the same precipitate at temperatures of 350, 450, 750, and 900° C. for the purpose of investigating the effect of the annealing temperature. When the precipitate is annealed at 200° C., iron-doped tin monoxide (Sn1-xFexO) results. Pure iron oxide samples have been prepared following identical synthesis procedures without using any SnCl2 to obtain insight into possible Fe impurity phases that might form under these synthesis conditions.
In an alternative embodiment, cobalt-doped tin dioxide, Sn1-xCo2O2, with x being 1% or less, exhibiting room-temperature ferromagnetism, has been developed. In this alternative embodiment, magnetic hysteresis loops are observed at 300 K (room-temperature) with coercivity Hc ˜630 Oe, saturation magnetization Ms˜0.233 μB/Co ion and about 31% remenance. SnO2 samples doped with ≦1% Co showed RTFM with significantly high coercivity (˜630 Oe), moderate remenance (˜31%) and better squareness of the hysteresis loop, but had a lower magnetic moment of 0.133 μB/Co ion. However, for x>0.01, this ferromagnetism was completely destroyed and the samples demonstrated paramagnetic behavior. Preferably, the Co is evenly distributed throughout the SnO2 lattice, and the composite takes on a nanoscale particle form.
The Sn1-xCoxO2 is preferably prepared using a wet chemical method by reacting 0.02 M CoCl2.6H2O and 1 M SnCl2 with a molar ratio of x=[Co/(Co+Sn)]. A few drops of concentrated HCl are added to ensure dissolution. This solution is added to a 5M solution of NH4OH, and the resulting mixture is heated to 80° C. for several hours. The precipitate is annealed in air at various temperatures for three hours to obtain Sn1-xCoxO2. Chemically synthesized Sn1-xCoxO2 powders have been shown to exhibit RTFM for x≦0.01 when prepared in the 350 to 600° C. range.
The sol-gel based wet chemistry used to manufacture the two preferred embodiments is preferred over other possible means because it is relatively inexpensive, it intrinsically excludes the segregation of transition metal nanoparticles, it has the ability to kinetically stabilize metastable phases (such as orthorhombic SnO2) and extended solid solutions, and it is very efficient for the controlled syntheses of materials in the nanosize range.
For both Fe- and Co-doped SnO2 with preparation temperatures of <300° C. and >750° C., there is no ferromagnetism and the particles are not nanoscale in size. It is believed that a ferromagnetic powder with nanoscale particles can be achieved with an annealing temperature above 300° C. and below 750° C.
A. Confirmation of Nominal Doping Concentrations
The nominal Fe doping concentrations of both Sn1-xFexO2 and Sn1-xFexO have been confirmed by PIXE measurements. The powder samples were first mixed with a very small amount of polyvinyl alcohol and then palletized using a hand-held press. The samples were then irradiated with a 2.0 MeV He+ ion beam and the x-rays emitted during the de-excitation process within the atoms were analyzed using an x-ray spectrometer.
The PIXE data obtained from selected samples of Sn1-xFexO2 are shown in
Typical PIXE spectra from Sn1-xCoxO2 samples are shown in
B. Crystalline Structure of the Compositions
X-ray diffraction (XRD) studies utilizing the Debye-Scherrer technique were used to determine the crystalline structure of the compositions obtained. XRD spectra were recorded at room temperature on a Phillips X′Pert x-ray diffractometer with a CuKα source (μ=1.5418 Å) is Bragg-Brentano geometry. The loose powder samples were leveled in the sample holder to ensure a smooth surface and mounted on a fixed horizontal sample plane. Data analyses were carried out using profile fits of selected XRD peaks.
As shown in
The XRD patterns of powder Sn1-xFexO samples, on the other hand, showed strong peaks of tetragonal SnO with some weak SnO2 traces, as shown in
The directly opposite changes in the lattice parameters observed in Sn1-xFexO2 and Sn1-xFexO with Fe doping concentration might reflect the effect of substituting Fe3+ for Sn4+ ions in SnO2 and for Sn2+ ions in SnO. This might require rearrangement of neighboring oxygen ions for charge neutrality. When the 5% Fe-doped Sn1-xFexO2 samples were prepared at different temperatures in the 200 to 900° C. range, the tetragonal SnO phase was observed at 200° C. and showed a gradual conversion to the SnO2 phase with increasing preparation temperature until its apparent disappearance at ≧450° C., as illustrated in
XRD patterns of the Sn1-xCOxO2 samples showed the formation of tetragonal cassiterite SnO2 with a very small fraction of metastable orthorhombic phase. For x≧0.08, weak peaks of Co3O4 started appearing and gradually strengthened with increasing Co doping, suggesting a saturation limit of Co in SnO2. It is noted that with increasing Co concentration, the intensity of the cassiterite SnO2 phase decreased while the relative concentration of the orthorhombic phase gradually increased. Changes in the XRD peak intensity of the cassiterite phase (Ic110) and the orthorhombic phase fraction (xo) of SnO2 are shown in
using K=2.69. Formation of the high-temperature orthorhombic SnO2 phase at ambient conditions has been observed in thin films and nanoscale powders. Nucleation of the metastable orthorhombic phase has been attributed to thin film strains and size-dependent internal pressures due to surface stresses in nanoparticles. Therefore, the increasing orthorhombic fraction of SnO2 with Co concentration indicates that Co doping causes structural disorder and strain, and possible changes in the particle size. The growth of the orthorhombic fraction is fast up to 1% Co, above which a slower growth is observed, as shown in
Average particle size L of the tetragonal SnO2 phase was calculated using the width of the (110) peak and the Scherrer relation,
(where θ is the peak position, λ is the x-ray wavelength and B=(Bm2−Bs2)1/2 was estimated using the measured peak width Bm and the instrumental width Bs). These estimates showed that the crystallite size decreased with increased Co doping, as shown in
XRD peak positions showed significant changes with Co doping as shown in FIGS. 9(c) and 9(d). The tetragonal cassiterite SnO2 peaks initially shifted to the higher 2θ angles as x increased to 0.01, as shown in
Interstitial incorporation of Co2+ ions might cause significant changes and disorder in the SnO2 structure as well as many dramatic changes in the properties of the material, which is discussed in the following sections. The large difference in the charges and coordination numbers of Sn4+ and Co2+ ions will also contribute to the structural disorder in SnO2 due to the removal of some oxygen ions that were attached to the octahedrally coordinated Sn4+. For x≧0.03, the observed expansion along the a-direction and continued contraction along the c-direction shown in
In
C. Optical Properties of the Cobalt-Doped Tin Dioxide
Room-temperature optical spectra in the ultraviolet and visible light wavelength ranges were collected for the Sn1-xCoxO2 samples using a CARY 5000 spectrophotometer fitted with an integrating sphere diffuse reflectance accessory. The spectrophotometer measures reflectance relative to a background scatterer, which was powdered BaSO4. These studies indicated that samples with x≦1 do not have any Co3O4 phases.
Preliminary optical characterization of the pure and Co doped SnO2 powders were carried out by measuring the diffuse reflectance at room-temperature.
Diffuse reflectance measurements carried out on a pure nanoscale Co3O4 reference sample prepared using an identical procedure (with x=1), showed prominent signatures at lower energies as shown in
D. Raman Spectra of the Sn1-xCoxO2 Samples
Raman spectra were collected for the Sn1-xCoxO2 samples using a Renishaw S2000 Raman microscope. Samples were all probed using identical instrument conditions: 783 nm diode laser, 1200 line/mm grating, over a Stokes Raman shift range of 50-1000 cm−1. A line focus accessory was also employed, which permitted the collection of photon scatter data from an area ˜2 μm by 60 μm, rather than a discreet 1-2 μm diameter spot. Incident laser power was not measured; however, power at the laser head was ˜28 mW, which would be expected to produce ˜2-4 mW at the sample. Sample preparation consisted of loosely packing the powder into a stainless steel die accessory, which was then mounted on the microscope stage for probing.
For Sn1-xCoxO2 samples with x≧0.03, there is an apparent disappearance of the SnO2 peaks. This disappearance is most obvious for the 630 cm−1 SnO2 peak as illustrated in
As discussed above, at 0.5 and 1 molar percent of Co, a small Raman peak is present at 692 cm−1. However, when the Co molar percentage is increased to 3, an intense Raman peak at 688 cm−1 appears. The width of the 688 cm−1 peak precludes determination if the 692 cm−1 is still present. Two obvious conclusions are possible: i) the 692 cm−1 peak represents a very small amount of Co3O4, and ii) the 692 cm−1 mode represents a vibrational mode of Sn1-xCoxO2.
E. Shape and Size of the Particles in the Compositions
The shape and size of the particles in the compositions were determined using transmission electron microscopy. This showed that the Sn1-xFexO2 particles were all elongated with their average aspect rations changing from 1.25 and 70 nm long for x=0.01 to 1.7 and 25 nm long for x=0.05. It is estimated that for ferromagnetic Sn1-xFeO2 in this preferred embodiment, 95% of the particles are shorter than 100 nm long. It is estimated that at least 95% of the Sn1-xCoxO2 particles are less than 50 nm long.
High-resolution transmission electron microscopy (TEM) analysis was carried out on a JEOL JEM 2010 microscope with a specified point-to-point resolution of 0.194 nm. The operating voltage of the microscope was 200 kV. All images were digitally recorded with a slow scan CCD camera (image size 1024×1024 pixels), and image processing was carried out using the Digital Micrograph software from Gatan (Pleasant, California). Energy dispersive x-ray spectroscopy (EDX) was carried out using the Oxford Link system attached to the TEM.
The transmission electron microscopy measurements showed significant changes in the shape and size of the Sn1-xFexO2 particles depending on the level of Fe-doping and the preparation temperature. Sn1-xFexO2 particles prepared at 600° C. are shown in FIGS. 12(a) and 12(b). These particles were all elongated with their aspect ratios and average length L changing from ˜1.25 and 70 nm, for x=0.01, to 1.7 and 25 nm for x=0.05. Sn0.95Fe0.05O2 particles annealed at 600° C. and 900° C. are shown in FIGS. 13(a) and 13(b). It is estimated that for ferromagnetic Sn1-xFexO2 in this preferred embodiment, 95% of the particles are shorter than 100 nm long. These crystallite sizes match very well with similar estimates obtained from the XRD data, shown in
TEM images also revealed significant differences in the shape of the 600° C. prepared Sn1-xCOxO2 particles doped with different percentages of Co. The Sn0.99Co0.01O2 nanoparticles shown in
F. Mossbauer spectra of Sn1-xFexO2
Mossbauer spectroscopy measurements showed that Sn0.95Fe0.05O2 exhibited ferromagnetically ordered Fe3+ spins when prepared at 350° C., but that these ferromagnetically ordered Fe3+ spins were converted to a paramagnetic spin system as the preparation temperature increased to 600° C. For these measurements, randomly oriented absorbers were prepared by mixing approximately 30 mg of sample with petroleum jelly in a 0.375 inch thick and 0.5 inch internal diameter Cu holder sealed at one end with clear tape. The holder was entirely filled with the sample mixture and sealed at the other end with tape. Spectra were collected using a 50 mCi (initial strength) 57Co/Rh source. The velocity transducer MVT-1000 (WissEL) was operated in constant acceleration mode (23 Hz, ∓12 mm/s). An Ar—Kr proportional counter was used to detect the radiation transmitted through the holder, and the counts stored in a multichannel scalar as a function of energy (transducer velocity) using a 1024 channel analyzer. Data were folded to 512 channels to give a flat background and a zero-velocity position corresponding to the center shift (CS or δ) of a metallic iron foil at room temperature. Calibration spectra were obtained with a 20 μm thick α-Fe(m) foil (Amersham, England) placed in exactly the same position as the samples to minimize any errors due to changes in geometry. Sample thickness corrections were not carried out. The data were modeled with RECOIL software (University of Ottawa, Canada) using a Voigt-based spectral fitting routine.
Three selected samples, Sn0.95Fe0.05O prepared at 200° C., Sn0.95Fe0.05O2 prepared at 35° C., and Sn0.95Fe0.05O2 prepared at 600° C., were investigated using Mossbauer spectroscopy, and their spectra are shown in
Experimental and fit-derived RT Mossbauer spectra of the Sn0.95Fe0.05O2 sample prepared at 350° C. are shown in
The derived Mossbauer parameters of the central doublet, which is due to contribution from paramagnetic Fe site(s) to the sample, do not favor the formation of small particle magnetite and goethite. Small-particle Fe oxides such as magnetite (<10 nm), goethite (<15 nm), and hematite (<8 nm) display a doublet at room temperature (well below their magnetic ordering temperature) due to superparamagnetism. The parameters of the doublet in
Thus, the Mossbauer data shown in
E. The Distribution of the Dopant throughout the Crystallite
1. Confirmation by x-ray diffraction studies of Sn1-xFexO2
X-ray diffraction (XRD) studies utilizing the Debye-Scherrer technique have also shown that the Fe is evenly distributed throughout the SnO2, meaning that there are no phases or clusters of the Fe. The pure iron oxide samples (prepared under identical synthesis conditions, but with no SnCl2) showed maghemite [γ-Fe2O3,
2. Confirmation by X-Ray Photoelectron Spectroscopy Studies
X-ray photoelectron spectroscopy studies (XPS) showed that Sn1-xFexO2 and Sn1-xCoxO2 prepared according to the methods disclosed herein produce a uniform distribution of the dopant in the entire crystallite. XPS measurements for both Fe-doped and Co-doped SnO2 were performed on powder samples using a Physical Electronics Quantum 2000 Scanning ESCA Microprobe. The system used a focused monochromatic A1Kα x-ray (1486.7 eV) source and a spherical section analyzer. The instrument had a 16 element multichannel detector. The x-ray beam used was a 105 W, 100 μm diameter beam that was rastered over a 1.4 mm×0.2 mm rectangle on the sample. The powder samples were mounted using a small amount of double-coated carbon conductive tape. The x-ray beam was incident normal to the sample and the photoelectron detector was at 45° off-normal. Data were collected using a pass energy of 46.95 eV. For the Ag 3d5/2 line, these conditions produce full width at half-maximum of better than 0.98 eV. Although the binding energy (BE) scale was calibrated using the Cu 2p3/2 feature at 932.62∓0.05 eV and Au 4f feature at 83.96∓0.05 eV for known standards, both the Fe-doped and Co-doped SnO2 surfaces experienced variable degrees of charging. Low-energy electrons at ˜1 eV, 21 μA, and low-energy Ar+ ions were used to minimize this charging. The BE positions were referenced using the 486.7 eV position for the Sn 3d5/2 feature for the Sn1-xFexO2 samples and for the Sn1-xCoxO2 samples, and the 486.9 eV position for the Sn1-xFexO samples. XPS spectra were also collected after Ar+ ion sputtering using a 4 kV Ar+ ion beam rastered over a 4 mm×4 mm sample area. The sputter rates were calibrated using a SiO2 standard with known thickness.
The Fe 3p1/2 XPS spectral region of Sn1-xFexO2 (prepared by annealing the precipitate at 600° C.) samples with x=0.01 and 0.05 are shown in
To further confirm the Fe surface diffusion possibility, XPS spectra were collected from the 900° C. prepared Sn1-xFexO2 sample employing Ar+ ion sputtering to remove surface layers from the powder samples mounted on carbon conductive tape, as shown in
The Co 2p3/2 and Co 2p1/2 XPS spectral region of the Sn1-xCoxO2 samples are shown in
Atomic percentages of Sn, Co, and O calculated using the Sn 3d5/2 (486.7 eV), O 1 s (530.65 eV), and Co 2p3/2 (781.4 eV) peaks are shown in
3. Shown by Absence of Iron Oxide Phases in the Sn1-xFexO2
The even distribution of Fe throughout the ferromagnetic Sn1-xCoxO2 powder has been shown by the absence of iron oxide phases in the samples. The origin of ferromagnetism in dilute magnetic semiconductor oxides has been extensively studied recently because of the possible presence of weaker secondary phases. This is particularly important when the ferromagnetic component is weak. The fact that the sol-gel preparation of the samples and their subsequent drying and annealing processes were all conducted in air intrinsically eliminates the possibility of forming metallic Fe particles.
The possibility was investigated that the ferromagnetism observed in Sn1-xCoxO2, when prepared in the 350 to 600° C. range, may be due to weak traces of maghemite or magnetite phases of iron oxide formed in the sample. The pure iron oxide samples prepared under identical synthesis conditions showed the formation of pure maghemite when prepared at 200° C. and pure hematite at 600° C. However, no ferromagnetism was observed in the Sn1-xFexO sample prepared by annealing the precipitate at 200° C., which rules out the presence of any maghemite phase undetected in the XRD data. Therefore, it is unlikely that this phase will appear when the Sn1-xFexO2 sample is prepared by annealing the same precipitate in the 350 to 600° C. range. Investigation of the phase transition of pure iron oxide samples prepared under identical conditions showed that the maghemite phase converted to the hematite phase when annealed at temperatures above 350° C. Thus, it is very unlikely that the maghemite phase of iron oxide is present in the Sn1-xCoxO2 samples prepared by annealing at temperatures ≧350° C.
The M versus H data shown in
Further, careful analysis of the samples using XRD, TEM, and selected area diffractions experiments has ruled out the presence of any iron oxide phases in the Sn1-xCoxO2 samples. Finally, the Mossbauer data, XPS spectra, and hysteresis loop parameters obtained from the Sn1FexO2 samples clearly ruled out the presence of any bulk or nanoscale magnetite, hematite, maghemite, or goethite phases of iron oxide in the samples.
Room-temperature ferromagnetism observed in a Mn-doped ZnO system has been shown to result from a metastable Mn2-xZnXO3-d type phase formed by the diffusion of Zn into Mn oxides. In these studies, peaks due to pure and/or doped manganese oxides were clearly observed in the XRD measurements (plotted on a log scale). In the present work, although the saturation magnetization increases by about four times as Fe concentration increases to 5%, no indication of pure or doped iron oxides or other impurities is observed in the XRD measurements (shown on log scale), as illustrated in
4. Incorporation of Fe into the SnO2 and SnO Lattices
The systematic changes in the lattice parameters, particle size, and shape observed in XRD and TEM studies strongly support the progressive incorporation of Fe into the SnO2 and SnO lattices with increasing x. The one-to-one match in the relative changes in the saturation magnetization Ms and lattice volume V, shown in
The conclusion that the Fe is incorporated into the SnO2 and SnO lattices is also supported by the role of the host system. It is well known that the p-type semiconducting behavior SnO results from an excess of oxygen, whereas the existence of oxygen vacancies in SnO2 make it an excellent n-type semiconductor. The XPS data obtained for 1% and 5% Fe-doped SnO showed identical oxygen atomic percentages (see Table I), whereas the oxygen concentration decreased in Sn1-xFexO2 with Fe concentration. The Sn-O distance of 2.057 Å in SnO2 is lower than the 2.223 Å in SnO, and this might influence the overlap of the electron orbitals. Thus, in Sn1-xFexO, Fe doping might favor the formation of antiferromagnetic Fe3+—O2−Fe3+ groups, whereas Sn1-xFexO2 will have a large number of ferromagnetic Fe3+-[oxygen vacancies]-Fe3+ groups because of the oxygen vacancies. This might explain the observed antiferromagnetic interaction in Sn1-xFexO and ferromagnetism in Sn1-xFexO2.
The Sn1-xFexO2 composition showed a strong structure-magnetic property relationship, as shown in
F. Magnetic Properties of the Compositions
The Sn1-xFexO2 showed ferromagnetic behavior with a Curie temperature of up to 850 K, well above room-temperature, for the 1% Fe-doped sample. All of the Sn1-xFexO2 samples show well-defined hysteresis loops at 300 K, room-temperature, with remanence Mr and saturation magnetization Ms increasing gradually with the level of Fe-doping. The ferromagnetic property is stronger when prepared at lower annealing temperatures, and it gradually declines with increasing preparation temperature and eventually disappears completely for preparation temperatures greater than 600° C. In the preferred embodiment, the Sn1-xFexO2 powder is free of any hematite particles.
Magnetic measurements for both Sn1-xFexO2 and Sn1-xCOxO2 were carried out as a function of temperature (4 to 350 K) and magnetic field (0 to ˜65 kOe) using a commercial magnetometer (Quantum Design, PPMS) equipped with a superconducting magnet. Measurements were carried out on tightly packed powder samples placed in a clear plastic drinking straw. The data reported were corrected for the background signal from the sample holder (clear plastic drinking straw) with diamagnetic susceptibility χ=−4.1×10−8 emu/Oe.
1. Iron Concentration Dependence
a. Sn1-xFeO2
The room-temperature M versus H data of Sn1-xFexO2, shown in
Measurements of the sample magnetization M as a function of magnetic field H and temperature T were carried out using a commercial magnetometer (Quantum Design, PPMS) equipped with a superconducting magnet. The data reported were corrected for the background signal from the sample holder. In the inset of
M=M0{[(2J+1)/2J]coth[(2J+1)y/(2J)]−(½J)coth(y/2J)}
Where y=(gμBJH)/(kT), M0 is the saturation magnetization, g is the spectroscopic splitting factor (g=2.0023 for free electrons), μB is the Bohr magneton and k is the Boltzmann constant. M vs. H data of the Sn1-xCoxO2 samples fit very well with their theoretical estimates yielding a total angular momentum J=1.81±0.1. These values are in good agreement with experimental magnitudes (˜4.8) reported for paramagnetic Co2+ ions with spin S=3/2 [13].
Magnetic susceptibility χ=M/H of the samples measured as a function of temperature at a constant H=500 Oe also showed the expected paramagnetic behavior. In
X=X0+[C/(T+θ)]
Where X0=1.5(0.2)×10−6 emu/g Oe represents weak non-paramagnetic contribution, Curie constant C=Nμ2/3k is a measure of the paramagnetic ion concentration (N=number of magnetic ions/g, μ=magnetic moment of the ion) and θ is the Curie-Weiss temperature which represents the magnetic exchange interactions between the spins. These fits yield θ=0.18 and 1.55K, and C=0.63×10−4 and 1.6×10−4 emu K/g Oe for x=0.01 and 0.03 respectively.
The pure hematite form of iron oxide, prepared at 600° C. following an identical synthesis procedure but with no Sn precursor, showed a weak magnetization, as shown in FIGS. 20(a), 20(c), and 21. The most striking characteristics of bulk hematite include the sharp Morin transition near 263 K in the M versus T data and a spin-flop (SF) transition at HSF˜67.5 kOe in the M versus H data. Both of these transitions were indeed present in our pure hematite as shown in FIGS. 20(a) and 21, albeit with reduced magnitudes which are presumably due to a smaller particle size of ˜53 nm. These transitions were clearly absent in all of the Sn1-xFexO2 samples, ruling out the presence of any hematite particles.
The Sn1-xFexO2 samples showed well defined hysteresis loops at 300 K, as shown in
Some of the samples with 0.5 and 1% Co doping annealed at 600° C. showed a ferromagnetic behavior. In the inset (a) of
The systematic growth of both ferromagnetic and paramagnetic contributions in Sn1-xFexO2 with increasing x, as shown in FIGS. 24(a) and 24(b), suggests that the ferromagnetic component is not growing at the expense of the paramagnetic Fe3+ ions as Fe doping increases. Other researchers have proposed a ferromagnetic exchange mechanism involving oxygen vacancies, which form F-centers with trapped electrons, for the observed ferromagnetism in Fe-doped SnO2 thin films. Overlap of the F-center electron orbitals with the d-orbitals of the neighboring Fe3+ spins to form Fe3+-[oxygen vacancies]-Fe3+ groups is crucial for the proposed ferromagnetic coupling. It has been argued that doped Fe3+ spins might also exist as isolated paramagnetic spin systems wherever the F-center mediated ferromagnetic coupling is not achieved due to lack of Fe3+ neighbors and/or oxygen vacancies. In addition, any Fe3+—O2−—Fe3+ superexchange interactions will be antiferromagnetic in nature. As Fe doping concentration increases, both ferromagnetic and paramagnetic/antiferromagnetic components will increase leading to the observed variations shown in Figures (FIGS. 15(a) and 15(b)). It is believed that Sn1-xFexO2 will exhibit ferromagnetism for any value of x up to the solubility limit of Fe in SnO2, or 10%.
b. Sn1-xFe1O
M=M0{[(2J+1)/2J]coth[(2J+1)y/(2J)]−(½J)coth(y/2J)}
where y=gμBJH/k(T+T0), M0 is the saturation magnetization, g=2.0023 is the spectroscopic splitting factor, μB is the Bohr magneton, and k is the Boltzman constant. Based on the Mossbauer data discussed above, this analysis was carried out assuming that J=5/2 (which is expected for Fe3+). Here, T0 is included as a measure of the magnetic interaction between the Fe spins, which prevents complete alignment of the spins even at the highest magnetic fields employed. A larger T0 indicates stronger antiferromagnetic (AF) interactions between the disordered Fe spins. Magnitudes of M0 and T0 obtained from this analysis are shown in Table II. M versus H plots of Sn1-xFexO samples measured at 300 K showed a linear variation owing to the paramagnetic behavior, as shown in
Magnetization M of the Sn1-xFexO samples measured as a function of temperature T at a constant field H=500 Oe also showed the expected paramagnetic behavior, as shown in
The pure iron oxide sample prepared under identical conditions as Sn1-xFexO was strongly ferromagnetic, as shown in FIGS. 31(a) and 31(b). M versus T data, shown in
2. Cobalt Concentration Dependence
Magnetic measurements carried out on pure SnO2 nanoparticles showed the expected diamagnetism with a negative magnetic susceptibility. Applicant has shown that the Sn1-xCoxO2 samples with x≦0.01 were all ferromagnetic at room-temperature when prepared in the 350 to 600° C. temperature range.
The appearance of ferromagnetism in Sn1-xCoxO2 samples with x≦0.01 and its complete absence at higher Co concentrations can be qualitatively understood by comparing the changes in the magnetic and structural properties noticed in the XRD, Raman, and TEM studies of the 600° C. prepared samples. As shown in the previous sections, for x<0.01 the SnO2 lattice contracts, resulting in the reduction of the distance between nearby Co2+ spins, and possibly triggering a ferromagnetic coupling. Substitution of Sn4+ ions (octahedrally coordinated with six nearest oxygen neighbors) in SnO2 with Co2+ ions will result in the creation of oxygen vacancies and additional charge carriers. It is not clear if this ferromagnetic ordering is carrier mediated or via other mechanisms such as based on localized defects (F-centers). Increasing the Co doping to ≧3% results in a rapid expansion of the SnO2 lattice and significant structural disorder indicated by the rapid broadening and disappearance of the Raman peaks, as shown in
It may be noted that the ferromagnetic regime of Sn1-xCoxO2 with x≦0.01 corresponds to the compositions for which the SnO2 lattice contracts (see FIGS. 32(b) and 32(c)). This might suggest that the observed ferromagnetism may be related to internal pressure changes. Changes in the internal or external lattice volume/pressure have been reported to produce ferromagnetism in itinerant electron metamagnets.
3. Temperature Dependence in Sn1-xFexO2
The ferromagnetic component of Sn1-xFexO2 gradually declines and subsequently disappears as the preparation temperature increases, as shown in
Based on the observed changes in the Fe XPS peak intensity shown in
4. Temperature Dependence in Sn1-xCoxO2
To further investigate the role of synthesis parameters on the ferromagnetic behavior of 1% Co doped SnO2, new samples were prepared by annealing the precipitate at temperatures of 250, 350, 450, 600 and 830° C. in air, taking a fresh portion of the dried precipitate each time. The sample annealed at 830° C. showed only the cassiterite phase of SnO2, but those annealed at 600, 450, and 350° C. showed cassiterite and orthorhombic phases, as shown in
In the main panel of
In conclusion, it has been shown that powder samples of chemically synthesized Sn1-xCOxO2 powders with x≦0.01 exhibit RTFM. These samples exhibit significantly high coercivity (˜630 Oe) and good squareness of the loop, but with low magnetic moment of 0.133 μB/Co ion. Based on the XRD, PIXE, TEM and magnetic data, the observed ferromagnetic interactions seem to be controlled by the oxygen stoichiometry.
II. The Gas Sensing Process
The inventor has developed the ability to detect a gas by causing the gas to flow across a material and measuring the change in a magnetic property, preferably magnetization, of the material. Changes in the magnetic properties of a material by flowing a gas has never been used as a sensing method. The preferred material for the process is Sn0.95Fe0.05O2, the manufacture and properties of which have been described above. However, other magnetic materials could be used, so long as their magnetic properties change as a gas flows across them. A gas detected using this process is molecular oxygen, O2. However, any gas capable of oxidizing or reducing the magnetic material could be used. The preferred apparatus for detecting a gas using this method is shown in
To make the gas sensor 10 usable to detect unknown gases, it must first be calibrated with known gases. The saturation magnetization of Sn0.95Fe0.05O2 is shown in
The magnetic properties of the gas sensing material 30 change because the carrier-mediated ferromagnetism of Sn0.95Fe0.05O2 can be tailored by exposing it to reducing or oxidizing gaseous atmospheres. Thus, carrier-mediated ferromagnetism has been developed as a new, efficient gas sensing parameter.
Compared to their semiconductor gas sensor counterparts which measure changes in electrical properties, a magnetic gas sensor is much more attractive because no electrical contacts are required to detect the response, the detection process requires only a moderate magnetic field to magnetize the sample and a pickup coil to collect the magnetic response of the material, powder samples when used offer a very large surface area and higher sensitivity, magnetic responses are much faster than electrical responses, the lack of electrical contacts and the high magnetic response due to ferromagnetism will further add to the sensitivity of the gas-sensor device, and the operation range can be as high as the Curie temperature Tc.
Since the oxygen stoichiometry in SnO2, the sensing material (before doping), is a surface driven property, the gas-sensing and magnetic properties of a doped oxide semiconductor, when used as the material, are expected to vary significantly with crystalline size, and therefore depend on the doping concentrations and preparation temperatures.
Although this invention has been described above with reference to particular means, materials and embodiments, it is to be understood that the invention is not limited to these disclosed particulars, but extends instead to all equivalents within the scope of the following claims.
This application claims priority based on U.S. Provisional Application No. 60/598,203, Ferromagnetic Powders of Tin Oxide Nanoparticles Doped with Cobalt and Magnetic Gas Sensor Utilizing Them, filed Jul. 30, 2004, and U.S. Provisional Application No. 60/612,708, Development of High Temperature Ferromagnetism in SnO2 and Paramagnetism in SnO by Fe Doping, filed Sep. 23, 2004, the disclosures of both of which are hereby incorporated by reference.
Number | Date | Country | |
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60598203 | Jul 2004 | US | |
60612708 | Sep 2004 | US |