Number | Name | Date | Kind |
---|---|---|---|
RE35036 | Yabu et al. | Sep 1995 | |
4232439 | Shibata | Nov 1980 | |
5188975 | Kojima et al. | Feb 1993 | |
5190887 | Tang et al. | Mar 1993 | |
5198384 | Dennison | Mar 1993 | |
5240874 | Roberts | Aug 1993 | |
5344787 | Nagalingam et al. | Sep 1994 | |
5346841 | Yajima | Sep 1994 | |
5355006 | Iguchi | Oct 1994 | |
5382540 | Sharma et al. | Jan 1995 | |
5386131 | Sato | Jan 1995 | |
5416349 | Bergemont | May 1995 | |
5429960 | Hong | Jul 1995 | |
5432107 | Uno et al. | Jul 1995 | |
5441910 | Nakashiba | Aug 1995 | |
5705410 | Guegan | Jan 1998 | |
5770502 | Lee | Jun 1998 | |
5783457 | Hsu | Jul 1999 | |
5851886 | Peng | Dec 1998 | |
5891774 | Ueda et al. | Apr 1999 | |
5915185 | Fratin et al. | Jun 1999 | |
5920776 | Fratin et al. | Jul 1999 |
Entry |
---|
Electronics and Communications in Japan, Part 2, vol. 73, No. 3, 1990 "Improvement of Asymmetrical Characteristics in Submicron CMOS Devices". |
IEEE CAT., No. 88 CH-2597-3, 1988 Symposium of VLSI Technology Digest of Technical Papers, May 10-13, 1988, A New Submicron MOSFET with LATID (Large Tilt-Angle Implanted Drain) Structure. |