The present invention relates to abatement systems used in electronic device, semiconductor, solar, LCD, film, OLED, and nano manufacturing, and more particularly to methods and apparatus for introducing fluids into an abatement reactor.
Effluent gases from the manufacturing of semiconductor, solar, LCD, film, OLED, and nanomanufacturing materials, and electronic devices, products and memory articles are made up of a wide variety of chemical compounds used and produced in a manufacturing facility. These compounds include inorganic and organic compounds, breakdown products of photo-resist and other reagents, and a wide variety of other gases. These gases are desirable to be removed from the effluent gas before being vented from the process facility into the atmosphere.
A significant problem within the aforementioned manufacturing industries has been the removal of these materials from the effluent gas streams. While virtually all U.S. electronic device and semiconductor, solar, LCD, film, OLED, and nano manufacturing facilities utilize scrubbers or similar means for treatment of such effluent gases, scrubbing technology alone may not be capable of removing all toxic or otherwise unacceptable impurities.
One solution to this problem is to incinerate or combust the effluent gas to oxidize the toxic materials thereby converting them into less toxic forms. In conventional systems, air, oxygen or oxygen-enriched air may be added directly into the combustion chamber of a reactor for mixing with the effluent gas to promote combustion and aid in the conversion of toxic materials to less toxic form.
Accordingly, methods and apparatus for introducing gaseous effluent components into the reactor chamber of an abatement system are desired.
In one aspect of the present invention, a thermal abatement system is provided, including: a thermal abatement reactor; an inlet in fluid communication with the reactor; a process chamber in fluid communication with the inlet; a first sheathing fluid source in fluid communication with the inlet; a first flow control device, adapted to regulate a flow of a first sheathing fluid from the first sheathing fluid source; and a controller, in signal communication with the first flow control device, adapted to regulate the sheathing fluid by operating the first flow control device; wherein the inlet is adapted to receive an effluent stream from the process chamber and the first sheathing fluid from the first sheathing fluid source, to sheathe the effluent stream with the first sheathing fluid to form a sheathed effluent stream, and to introduce the sheathed effluent stream into the reactor.
In another aspect of the present invention, a method for operating a thermal abatement system is provided, including: receiving an effluent stream into an inlet; receiving a first sheathing fluid into the inlet; forming a sheath of the first sheathing fluid around the effluent stream to form a sheathed effluent stream; introducing the sheathed effluent stream from the inlet into a thermal reactor; regulating the first sheathing fluid using a controller; and abating a portion of the effluent stream in the thermal reactor.
In yet another aspect of the present invention, A method for operating a thermal abatement system is provided, including: determining one or more of a chemistry and a flow rate of an effluent stream; selecting a sheathing fluid based on one or more of the chemistry and the flow rate of the effluent stream; supplying the selected sheathing fluid to an inlet by operating at least one flow control device to regulate the flow of at least one sheathing fluid; receiving the effluent into an inlet; forming a sheath of the sheathing fluid around the effluent stream to form a sheathed effluent stream; introducing the sheathed effluent stream from the inlet into a thermal reactor; and abating a portion of the effluent stream in the thermal reactor.
Other features and aspects of the present invention will become more fully apparent from the following detailed description, the appended claims and the accompanying drawings.
The introduction of air, oxygen or oxygen-enriched gas may cause certain unwanted reactions within a reaction chamber. For example, during the introduction of oxygen into a combustion chamber of an abatement unit, certain reactions may take place between the effluent components (e.g., silane) and oxygen (in air or oxygen-enriched air for example) supplied to the reaction chamber. As a result of these reactions, oxides, for example, silicon oxides, may be formed and these oxides may be deposited on the walls of the reaction chamber. In some instances, such deposits may form in or quite near the inlet to the reaction chamber. A mass of silicon oxides formed may be relatively large and the gradual deposition within or near the inlet to the reaction chamber may induce poor combustion and/or may cause clogging of the reaction chamber inlet, thereby necessitating increased maintenance of the reactor. Depending on the circumstances, cleaning of the abatement unit may need to be performed quite often, even as frequently as every three days.
The present invention provides systems, apparatus and methods for eliminating or reducing a severity of such deposits at or near the gas inlet (e.g., the effluent gas inlet) of the reaction chamber. In particular, the present invention may allow the reaction to be moved further into the reactor chamber and away from the gas inlet. The present invention may provide a curtain of a fluid (e.g., nitrogen) proximate the gas inlet to the reaction chamber such that introduced effluent gases do not react with the oxygen or oxygen-enriched air until further into the reactor chamber, and away from the inlet of the reaction chamber. Accordingly, the inlet may be less prone to becoming clogged with the reaction products from the reaction.
In addition, the present invention provides systems, apparatus and methods for enhancing the abatement of various effluents. In particular, the present invention may enhance the abatement of effluent by providing a curtain of a reagent fluid proximate the gas inlet to the reaction chamber such that introduced effluent gases may react with or be catalyzed by the reagent fluid. As such, the effluent may be more effectively abated.
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The process chambers 102 may include, for example, chemical vapor deposition chambers, physical vapor deposition chambers, chemical mechanical polishing chambers, etc. The processes that may be performed in the chambers include, for example, diffusion, PFC etch and epitaxy. Byproduct chemicals to be abated from these processes may include, for example, hydrides of antimony, arsenic, boron, germanium, nitrogen, phosphorous, silicon, selenium, silane, silane mixtures with phosphine, argon, hydrogen, organosilanes, halosilanes, halogens, organometallics and other organic compounds. The halogens, e.g., fluorine (F2) and other fluorinated compounds, are particularly problematic among the various components requiring abatement. The electronics industry frequently uses perfluorinated compounds (PFCs) in substrate processing tools to remove residue from deposition steps and to etch thin films. Examples of some of the most commonly used PFCs include CF4, C2F6, SF6, C3F8, C4F8, C4F8O, NF3, CHF3, CH3F, CH2F2.
A channel 108 (e.g., an exhaust conduit) may extend from each process chamber 102 to allow a flow of one or more effluent gases to exit the process chamber 102. The effluent gases may flow from the process chamber 102 through the channel 108 and into the inlet assembly 106.
The inlet assembly 106 may include one or more openings or inlets or other channels for the reception of effluent gas exhausted from the one or more chambers in processing tools 102. Additionally, the inlet assembly 106 may include one or more openings for receiving a flow of so-called “sheathing fluids” (e.g., oxygen, hydrogen, nitrogen, CDA, methane, etc.) from one or more sheathing fluid sources, such as first sheathing fluid source 110, and second sheathing fluid source 112, into the reactor 104 through conduits 114, 116. The inlet assembly 106 may include 1, 2, 3, . . . , n inlets or openings for such sheathing fluids. As described in more detail below, the inlet may be adapted to sheath an effluent stream with a sheathing gas to form a sheathed effluent stream which may be introduced into the abatement reactor 104.
A controller 120 may be connected to flow control devices 118, 119 through signal lines 122, to the process chamber 102 through signal line 124, and to sensor 126 through signal line 128. The signal lines 122, 124 and 128 may be hardwired connections or may be wireless connections. Although sensors 126 are shown in sensing communication with conduit 108, it should be understood that sensors may also be positioned to sense properties or conditions within the abatement reactor 104, the process chamber 102, or in any other suitable location.
Flow control devices 118, 119 may be valves, pumps, mass flow controllers or any other suitable flow control devices, and may be connected to mixing chamber 130 through conduits 114, 116 and from mixing chamber 130 to inlet 106 through conduit 132. It should be noted that although two flow control devices 118, 119 are shown, fewer or more flow control devices 118, 119 may be used, e.g., 1, 3, 4, 5, or more. The mixing chamber 130 is optional, and may be replaced with a simple y-shaped or other shaped junction of conduits 114, 116. In an alternative embodiment, the mixing chamber 130 may be replaced with or combined with an sheathing fluid pre-heater 130.
The controller 120 may be adapted to regulate the total flow and the flow ratio of one or more sheathing fluids from first and second sheathing fluid sources 110, 112, for example, by operating flow control devices 118, 119. By operating the sheathing fluid sources independently of each other, the controller 120 may be able to regulate the chemistry of a combined sheathing fluid which results from mixing the sheathing fluids. The controller 120 may be able to receive information from several sources. For example, the controller 120 may receive information from the process chamber 102 regarding the process step or steps which are being executed and may be adapted to use this information as a basis for controlling the flow of sheathing fluids. In addition to receiving information from the process chamber 102, the controller 120 may be adapted to receive information from one or more sensors 126, such as a nature of the effluent which is flowing through conduit 108 and/or the flow rate of effluent which is flowing through conduit 108. Thus, sensors 126 may be one or more of a flow sensor, and composition sensor, such as a thermopile detector. As stated above, sensors 126 may also be located in additional locations such as the abatement reactor 104, and/or the process chamber 102. Once again, the controller may use such sensor information as a basis for controlling the flow of sheathing fluids, as described in more detail below.
In some embodiments, the controller 120 may be coupled to and/or otherwise communicate with and/or control operation of the process chamber 102 and abatement systems. The controller 120 may be a microcomputer, microprocessor, logic circuit, a combination of hardware and software, or the like. The controller 120 may include various communications facilities including input/output ports, a keyboard, a mouse, a display, a network adapter, etc.
Typically, processing operations associated with electronic device manufacturing produce effluent gas that may include, for example, one or more of silane, H2, fluorine, silicon tetrafluoride (SiF4), hydrogen fluoride (HF), carbonyl fluoride (COF2), CF4 and C2F6. As described above, abatement systems may include one or more reactors 104 for the treatment of certain components in the effluent gases (e.g., a combustion reactor for combusting flammable or pyrophoric components such as silane and H2). In addition, for example, abatement systems may employ additional wet scrubbing, dry scrubbing, catalytic, plasma and/or similar means for converting the combusted effluent gases from the reactor to less toxic forms.
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As the inlet 202 becomes clogged, the pressure within the inlet 202 may increase. In some instances, the pressure may increase to a point at which an alarm indicator (not shown) may be activated, which may commence a shut-down process. This may result in the inlet 202 needing to be cleaned.
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The current state of the process chamber may be communicated from the process chamber 102, or from a separate process chamber controller (not shown), to the controller 120. Alternatively, the controller 120 may also serve as a process controller, and may contain, or have access to, a schedule of processes to be conducted in each process chamber 102. In such a case, determining the current state of the process chamber may be accomplished by polling a database which may be contained within or without the controller 120. In addition, the current state of the process chamber may be inferred from knowing the state of a gas panel (not shown)which provides reagents to the process chamber 102. Thus, the gas panel (not shown) may be in signal connection with the controller 120. Once the process state is known, the nature (chemical composition) and flow rate of the effluent stream is known.
In step 704, the current state of the process chamber 102, determined in step 702, is used to select a sheathing fluid or, in the case where the process chamber 102 is down, no sheathing fluid at all. For example, it may be desired to flow an inert gas during abatement of a deposition process effluent stream, or during a cleaning process effluent stream. Alternatively, it may be desired to flow one or more reagents, or a mixture of one or more reagents and an inert gas, during abatement of a particular deposition effluent stream, or during abatement of a cleaning process effluent stream. Which sheathing fluid to flow may be determined by the operator of the abatement system, e.g., in advance, and can be programmed into the controller 120.
In step 706, the current state of the process chamber 102, determined in step 702, is used to select a flow rate for the sheathing fluid. Once the current state of the process chamber 102 is known, the flow rate of the effluent stream is known. For example, if the process chamber 102 is down, a zero flow may be selected. If a process is occurring in the process chamber 102, it may be desirable to match the velocity and/or viscosity of the sheathing fluid to the velocity and/or viscosity of the effluent stream in order to achieve laminar flow and/or to reduce turbulence in the sheathed effluent stream. Thus, the flow rate for the one or more sheathing fluids may be selected so that the velocity and/or viscosity of the one or more sheathing fluids matches the velocity and/or viscosity of the effluent stream.
In step 708, one or more flow control devices are commanded to flow the desired sheathing fluid or fluids at the desired flow rate(s). The command may be issued by the controller 120 to the one or more flow control devices 118, 119. Thus, the chemistry of the sheathing fluid may be selected or controlled by appropriately commanding flow ratios between first and second (or more) sheathing fluids, and the overall flow rate of the desired combined or single sheathing fluid may be selected by commanding appropriate magnitudes for the flow rates of the one or more sheathing fluids. The sheathing fluids may optionally be pre-heated.
In step 710, a sheath of sheathing fluid is formed around the effluent stream, and the sheathed effluent stream is introduced into the abatement reactor. The sheath may be formed using the structures and methods described above with respect to
In step 712, a portion of the effluent stream is abated in the abatement reactor using conventional abatement techniques or yet to be discovered abatement techniques.
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In step 804, if chemical composition has been measured in step 802, the chemical composition may be used to select one or more sheathing fluids. One of ordinary skill in the art would be able to program the controller to select appropriate sheathing fluids based upon the chemical composition of the effluent stream. Step 804 is analogous to step 704, discussed above.
In step 806, if effluent stream flow rate has been measured is step 802, the flow rate may be used to select an appropriate sheathing fluid flow rate to achieve a desired laminar flow. Step 806 is analogous to step 706, discussed above.
In step 808, one or more flow control devices are commanded to flow the desired sheathing fluid or fluids at the desired flow rate(s). The discussion above of step 708 is equally applicable to step 808.
In step 810, a sheath of sheathing fluid is formed around the effluent stream, and the sheathed effluent stream is introduced into the abatement reactor. The sheath may be formed using the structures and methods described above with respect to
In step 812, a portion of the effluent stream is abated in the abatement reactor.
The foregoing description discloses only exemplary embodiments of the invention. Modifications of the above disclosed apparatus and methods which fall within the scope of the invention will be readily apparent to those of ordinary skill in the art. In some embodiments, the apparatus and methods of the present invention may be applied to semiconductor, solar, LCD, film, OLED, and nanomanufacturing materials and device processing and/or electronic device manufacturing.
Accordingly, while the present invention has been disclosed in connection with exemplary embodiments thereof, it should be understood that other embodiments may fall within the spirit and scope of the invention, as defined by the following claims.
The present application claims priority to U.S. Provisional Patent Application Ser. No. 61/080,105, filed Jul. 11, 2008 and entitled “METHODS AND APPARATUS FOR MOVING A REACTION FURTHER INTO A REACTOR” (Attorney Docket No. 11627/L), which is hereby incorporated herein by reference in its entirety for all purposes. The present application is related to the following commonly-assigned, co-pending U.S. Patent Application, which is hereby incorporated herein by reference in its entirety for all purposes: U.S. patent application Ser. No. 10/987,921 filed on Nov. 12, 2004, and entitled “REACTOR DESIGN TO REDUCE PARTICLE DEPOSITION DURING PROCESS ABATEMENT.” (Attorney Docket No. 9985) U.S. patent application Ser. No. 08/775,838, filed Dec. 31, 1996, now U.S. Pat. No. 5,955,037 and entitled “EFFLUENT GAS STREAM TREATMENT SYSTEM HAVING UTILITY FOR OXIDATION TREATMENT OF SEMICONDUCTOR MANUFACTURING EFFLUENT GASES.” (Attorney Docket No. 9955). U.S. patent application Ser. No. 09/400,662, filed Sep. 20, 1999, now U.S. Pat. No. 6,333,010 and entitled “EFFLUENT GAS STREAM TREATMENT SYSTEM HAVING UTILITY FOR OXIDATION TREATMENT OF SEMICONDUCTOR MANUFACTURING EFFLUENT GASES.” (Attorney Docket No. 9955/C01). U.S. patent application Ser. No. 09/307,058, filed May 7, 1999, now U.S. Pat. No. 6,322,756, and entitled “EFFLUENT GAS STREAM TREATMENT SYSTEM HAVING UTILITY FOR OXIDATION TREATMENT OF SEMICONDUCTOR MANUFACTURING EFFLUENT GASES.” (Attorney Docket No. 9955/P01). U.S. patent application Ser. No. 11/745,428, filed May 7, 2007, and entitled “EFFLUENT GAS STREAM TREATMENT SYSTEM HAVING UTILITY FOR OXIDATION TREATMENT OF SEMICONDUCTOR MANUFACTURING EFFLUENT GASES.” (Attorney Docket No. 9955/D02). U.S. patent application Ser. No. 09/970,613, filed Oct. 4, 2001, now U.S. Pat. No. 7,214,349, and entitled “EFFLUENT GAS STREAM TREATMENT SYSTEM HAVING UTILITY FOR OXIDATION TREATMENT OF SEMICONDUCTOR MANUFACTURING EFFLUENT GASES.” (Attorney Docket No. 9955/D01/Y02). U.S. patent application Ser. No. 11/552,447, filed Oct. 24, 2006, and entitled “EFFLUENT GAS STREAM TREATMENT SYSTEM HAVING UTILITY FOR OXIDATION TREATMENT OF SEMICONDUCTOR MANUFACTURING EFFLUENT GASES.” (Attorney Docket No. 9955/D01/C02/Y01). U.S. patent application Ser. No. 11/838,549, filed Aug. 14, 2007, and entitled “EFFLUENT GAS STREAM TREATMENT SYSTEM HAVING UTILITY FOR OXIDATION TREATMENT OF SEMICONDUCTOR MANUFACTURING EFFLUENT GASES.” (Attorney Docket No. 9955/D01/C03). U.S. patent application Ser. No. 09/420,080, filed Oct. 18, 1999, now U.S. Pat. No. 6,423,284, and entitled “FLUORINE ABATEMENT USING STEAM INJECTION OXIDATION TREATMENT OF SEMICONDUCTOR MANUFACTURING EFFLUENT GASES.” (Attorney Docket No. 9969). U.S. patent application Ser. No. 10/150,468, filed May 17, 2002, and entitled “FLUORINE ABATEMENT USING STEAM INJECTION OXIDATION TREATMENT OF SEMICONDUCTOR MANUFACTURING EFFLUENT GASES.” (Attorney Docket No. 9969/D01).
Number | Date | Country | |
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61080105 | Jul 2008 | US |