The present invention relates generally to systems and methods for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media.
Microfeature workpieces and workpiece assemblies typically include a semiconductor material having features, such as memory cells, that are linked with conductive lines. The conductive lines can be formed by first forming trenches or other recesses in the semiconductor material and then overlaying a conductive material (such as a metal) in and adjacent to the trenches. The conductive material adjacent to the trenches is then selectively removed to leave conductive lines or vias extending from one feature in the semiconductor material to another.
In a typical existing process, two separate chemical-mechanical planarization (CMP) steps are used to remove the excess portions of the conductive material 15 and the barrier layer 14 from the microfeature workpiece 10. In one step, a first slurry and polishing pad are used to remove the conductive material 15 overlying the barrier layer 14 external to the aperture 16, thus exposing the barrier layer 14. In a separate step, a second slurry and a second polishing pad are then used to remove the barrier layer 14 (and the remaining conductive material 15) external to the aperture 16. The resulting conductive line 8 includes the conductive material 15 surrounded by a lining formed by the barrier layer 14.
One drawback with the foregoing process is that high downforces are typically required to remove copper and (particularly) tantalum from the microfeature workpiece 10. High downforces can cause other portions of the microfeature workpiece 10 to become dished, scratched or eroded, and/or can smear structures in other parts of the microfeature workpiece 10. A further drawback is that high downforces typically are not compatible with soft substrate materials. However, it is often desirable to use soft materials, such as ultra low dielectric materials, around the conductive features to reduce and/or eliminate electrical coupling between these features.
The present invention is directed toward methods and systems for removing material from microfeature workpieces by electrochemical-mechanical polishing (ECMP). A method in accordance with one aspect of the invention includes providing a microfeature workpiece having a substrate material and a conductive layer positioned adjacent to a surface of the substrate material, with the conductive layer including at least one of a refractory metal and a refractory metal compound. The method can further include disposing a generally organic and/or generally non-aqueous electrolytic medium in contact with the conductive layer, and positioning first and second electrodes in electrical communication with the conductive layer, with at least one of the electrodes being spaced apart from the workpiece. The method can still further include removing at least a portion of the conductive layer by passing an electrical current along an electrical path that includes the first electrode, the electrolytic medium, and the second electrode.
In further embodiments of the invention, both the first and second electrodes can be spaced apart from the microfeature workpiece. The electrolytic medium can be selected to include methanol or another alcohol. The electrolytic medium can further include a corrosion inhibitor, NH4Cl, CuCl2, K-succinate, NH4-succinate, ammonium acetate and/or hydrogen fluoride. The conductive layer can include a barrier layer deposited beneath a blanket layer (e.g., a copper or a copper compound blanket layer), and the method can include removing at least part of the blanket layer before removing the barrier layer. The portion of the barrier layer can be removed with or without contact between the barrier layer and a polishing pad material.
Another embodiment of the invention is directed to a system for removing material from a microfeature workpiece. The system can include a workpiece support configured to carry a microfeature workpiece at a workpiece location, first and second electrodes positioned proximate to the workpiece support with at least one of the electrodes spaced apart from the workpiece location, and a polishing medium positioned at least proximate to the workpiece location. At least one of the polishing medium and the workpiece support can be movable relative to the other, and the polishing medium can include a polishing pad material and an electrolytic medium. The electrolytic medium can be generally organic and/or generally non-aqueous, and can include a solvent and an electrolyte. In further embodiments, the electrolytic medium can include methanol or another alcohol, and the electrolytic medium can be approximately 99% or more organic, and/or 90% or more non-aqueous. The system can also include an electrical current source coupled to the first and second electrodes.
As used herein, the terms “microfeature workpiece” or “workpiece” refer to substrates on and/or in which microelectronic devices are integrally formed. Typical microdevices include microelectronic circuits or components, thin-film recording heads, data storage elements, microfluidic devices, and other products. Micromachines and micromechanical devices are included within this definition because they are manufactured using much of the same technology that is used in the fabrication of integrated circuits. The substrates can be semiconductive pieces (e.g., doped silicon wafers or gallium arsenide wafers), nonconductive pieces (e.g., various ceramic substrates) or conductive pieces. In some cases, the workpieces are generally round, and in other cases the workpieces have other shapes, including rectilinear shapes. Several embodiments of systems and methods for removing material from microfeature workpieces via electrochemical-mechanical polishing (ECMP) are described below. A person skilled in the relevant art will understand, however, that the invention may have additional embodiments, and that the invention may be practiced without several of the details of the embodiments described below with reference to
One approach for addressing some of the drawbacks described above with reference to
To form an isolated conductive line within the recess 216, the first conductive material 218 and the second conductive material 209 external to the recess 216 are typically removed. In one embodiment, the second conductive material 209 is removed using a CMP process. In other embodiments, an electrochemical-mechanical polishing (ECMP) process or an electrolytic process is used to remove the second conductive material 209. An advantage of electrolytic and ECMP processes is that the downforce applied to the microfeature workpiece 210 during at least some phases of processing can be reduced or in some cases eliminated.
An ECMP system 260b in accordance with an embodiment of the invention includes a polishing medium 285b having at least two electrodes 220 (two are shown in
In operation, an initial portion of the second conductive material 209 can be removed from the workpiece 210 (a) electrolytically via the current supplied by the power source 221, and/or (b) chemically/mechanically as a result of both the chemical interaction between the first electrolytic medium 231a and the second conductive material 209, and the contact and relative motion between the polishing pad material 283b and the workpiece 210. The ECMP system 260b can be operated in different manners, depending on the nature of the workpiece 210 and/or the desired processing parameters. For example, the ECMP system 260b can be operated to remove material via only chemical-mechanical polishing by not activating the electrodes 220, or the ECMP system 260b can be operated to remove material via only electrolytic action by activating the electrodes 220 but not contacting the workpiece 210 with the polishing pad material 283b. The ECMP system 260b can remove material via ECMP by both activating the electrodes 220 and contacting the workpiece 210 with the polishing pad material 283b. Any of the foregoing processes can be conducted at least until the initial portion of the second conductive material 209 is removed to expose the first conductive material 218.
The second electrolytic medium 231b can have a generally organic (i.e., carbon-containing) composition. For example, the second electrolytic medium 231b can include methanol, ethanol, or another alcohol as a solvent. When the first conductive material includes tantalum, the second electrolytic medium can further include NH4Cl, CuCl2, ammonium acetate, and/or other monovalence organic salts. These compounds can be particularly suitable in cases where the first conductive material 218 includes tantalum or tantalum nitride, the second conductive material 209 includes copper and/or a copper compound, and the removal process need not remove the first conductive material 218 more rapidly than the second conductive material 209 (and in fact may remove the second conductive material 209 more rapidly). In other embodiments, the second electrolytic medium 231b can include NH4-succinate, K-succinate and/or other monovalence succinate salts. These compounds can be particularly suitable in cases where it is desirable to remove the second conductive material 209 more rapidly than the first conductive material 218. When the first conductive material 218 includes tantalum nitride, the second electrolytic medium 231b can include hydrogen fluoride in an alcohol or another organic solvent. An advantage of hydrogen fluoride is that it can remove tantalum nitride at a more rapid rate than copper. In one aspect of either embodiment, the second electrolytic medium 231b can be at least approximately 99% organic (e.g., it can contain at least 99% organic constituents, rather than non-carbon-containing constituents, by volume).
The second electrolytic medium 231b can also be generally non-aqueous. For example, when the second electrolytic medium 231b includes hydrogen fluoride, the overall composition of the second electrolytic medium 231b can be about ten percent aqueous or less. When the second electrolytic medium includes other constituents (e.g., NH4Cl, CuCl2, ammonium acetate, NH4-succinate, and/or K-succinate), the overall composition of the second electrolytic medium 231b can be about one percent aqueous or less.
One feature of an embodiment of the foregoing system is that the generally organic (and/or non-aqueous) second electrolytic medium 231b can remove the first conductive material 218 from the workpiece 210 without requiring high downforces even if (in some cases) higher downforces are used to remove the initial portion of the second conductive material 209. For example, when the first conductive material 218 includes tantalum or tantalum nitride, the downforce applied to the workpiece 210 while the first conductive material 218 is being removed can be from about 1.0 psi to zero psi. In one particular embodiment, the downforce can range from about 0.25 psi to about 0.1 psi or less, and in another particular embodiment, the downforce can be about 0.1 psi or less. By contrast, the typical downforce used to remove the first conductive material in conventional processes is generally from about 2.0 psi to about 5.0 psi. Because the downforce is reduced to such low levels, (a) the likelihood for dishing the second conductive material 209 remaining in the recess 216 can be reduced or eliminated, and/or (b) the likelihood for scratching or otherwise damaging the substrate material 213 when the overlying first conductive material 218 is removed can also be reduced or eliminated.
In a particular embodiment for which the first conductive material 218 includes tantalum nitride, the polishing pad material 283b can contact the first conductive material 218 with a vanishingly small downforce. In still another embodiment, the polishing pad material 283b can be out of contact with the workpiece 210 (as indicated by dashed lines in
Another feature of the foregoing embodiments is that one or more of the constituents of the second electrolytic medium 231b can preferentially remove the first conductive material 218. For example, when the first conductive material 218 includes tantalum, and the second conductive material 209 includes copper, both disposed in a tetraethylorthosilicate (TEOS) substrate material 213, the second electrolytic medium 231b can include K-succinate in methanol, which can remove tantalum approximately twice as fast as it removes copper, and can remove little or no TEOS. Accordingly, the second electrolytic medium 231b can remove the first conductive material 218 without dishing the second conductive material 209 and/or without scratching the substrate material 213. It is believed that one explanation for the foregoing behavior is that the second electrolytic medium 231b forms a stable copper-organic complex or other low solubility copper-organic compound at the interface between the copper and the electrolytic medium 231b. Accordingly, the second electrolytic medium 231b passivates the copper while retaining electrolytic properties. The copper-organic complex can be stable in the solid phase, and can have a limited or zero solubility in the second electrolytic medium 231b. The process performed by the second electrolytic medium 231b is therefore unlike that of typical passivating agents, including BTA, which are generally ineffective in a non-aqueous solution, and/or are not stable in the presence of an external electrical current.
Yet another feature of an embodiment of the second electrolytic medium 231b is that, whether it is generally organic, generally non-aqueous, or both, it can effectively remove tantalum and tantalum compounds at rates higher than those available with conventional methods, and/or with downforces lower than those associated with conventional methods. It is believed that at least one mechanism by which embodiments of the second electrolytic medium 231b achieve this result is by reducing and/or eliminating the passivation of tantalum into tantalum oxide (TaOx).
In any of the foregoing embodiments, the first conductive material 218 and the second conductive material 209 external to the recess 216 can be removed to produce a microfeature workpiece 210 having an embedded conductive structure 208, as shown in
In the embodiments described above with reference to
The apparatus 460 can also have a plurality of rollers to guide, position and hold the polishing pad 483 over the top-panel 481. The rollers can include a supply roller 487a, idler rollers 487b, guide rollers 487c, and a take-up roller 487d. The supply roller 487a carries an unused or preoperative portion of the polishing pad 483, and the take-up roller 487d carries a used or postoperative portion of the polishing pad 483. Additionally, the idler rollers 487b and the guide rollers 487c can stretch the polishing pad 483 over the top-panel 481 to hold the polishing pad 483 stationary during operation. A motor (not shown) drives at least one of the supply roller 487a and the take-up roller 487d to sequentially advance the polishing pad 483 across the top-panel 481. Accordingly, clean preoperative sections of the polishing pad 483 may be quickly substituted for used sections to provide a consistent surface for polishing and/or cleaning the microfeature workpiece 210.
The apparatus 460 can also have a carrier assembly 490 that controls and protects the microfeature workpiece 210 during polishing. The carrier assembly 490 can include a workpiece holder 492 to pick up, hold and release the microfeature workpiece 210 at appropriate stages of the polishing process. The carrier assembly 490 can also have a support gantry 494 carrying a drive assembly 495 that can translate along the gantry 494. The drive assembly 495 can have an actuator 496, a drive shaft 497 coupled to the actuator 496, and an arm 498 projecting from the drive shaft 497. The arm 498 carries the workpiece holder 492 via a terminal shaft 499 such that the drive assembly 495 orbits the workpiece holder 492 about an axis E-E (as indicated by arrow “R1”). The terminal shaft 499 may also rotate the workpiece holder 492 about its central axis F-F (as indicated by arrow “R2”).
The polishing pad 483 and a polishing liquid 484 define a polishing medium 485 that electrolytically, chemically-mechanically, and/or electro-chemically-mechanically removes material from the surface of the microfeature workpiece 210. In some embodiments, the polishing pad 483 may be a nonabrasive pad without abrasive particles, and the polishing liquid 484 can be a slurry with abrasive particles and chemicals to remove material from the microfeature workpiece 210. In other embodiments, the polishing pad 483 can be a fixed-abrasive polishing pad in which abrasive particles are fixedly bonded to a suspension medium. To polish the microfeature workpiece 210 with the apparatus 460, the carrier assembly 490 can position the microfeature workpiece 210 with a process surface of the workpiece 210 at a workpiece location in contact with the polishing liquid 484. Optionally the carrier assembly 490 can also press the microfeature workpiece 210 against a polishing surface 488 of the polishing pad 483. The drive assembly 495 then orbits the workpiece holder 492 about the axis E-E and optionally rotates the workpiece holder 492 about the axis F-F to translate the substrate 210 across the polishing surface 488. As a result, the abrasive particles and/or the chemicals in the polishing medium 485 and/or electrolytic action remove material from the surface of the microfeature workpiece 210 in a chemical and/or chemical-mechanical and/or electrochemical-mechanical polishing process.
During ECMP processing, the polishing liquid 484 can include an electrolyte which can be pre-mixed in the polishing liquid 484 or stored in an electrolyte supply vessel 430 and delivered with a conduit 437, as described in greater detail below with reference to
The electrodes 520a and 520b can be electrically coupled to the microfeature workpiece 210 (
The carrier assembly 790 controls and protects the microfeature workpiece 210 during the material removal process. The carrier assembly 790 typically has a substrate holder 792 with a pad 794 that holds the microfeature workpiece 210 via suction. A drive assembly 796 of the carrier assembly 790 typically rotates and/or translates the substrate holder 792 (arrows “I” and “J,” respectively). Alternatively, the substrate holder 792 may include a weighted, free-floating disk (not shown) that slides over the polishing pad 783.
To remove material from the microfeature workpiece 210 with the apparatus 760 in one embodiment, the carrier assembly 790 positions the microfeature workpiece 210 and (optionally) presses the microfeature workpiece 210 against a polishing surface 788 of the polishing pad 783. The platen 780 and/or the substrate holder 792 then move relative to one another to translate the microfeature workpiece 210 across the polishing surface 788. As a result, the abrasive particles in the polishing pad 783 and/or the chemicals in the planarizing liquid 784 remove material from the surface of the microfeature workpiece 210.
The apparatus 760 can also include a current source 721 coupled with leads 728a and 728b to one or more electrode pairs 770 (one of which is shown in
The foregoing apparatuses described above with reference to
The voltage applied to the workpiece 210 can be selected based on the material removed from the workpiece 210. For example, when removing tantalum from the workpiece 210, the current can be applied at a potential of 7.8 volts rms. When tantalum nitride is removed from the workpiece 210, the current can be applied at a potential of about 15 volts rms. In both embodiments, the workpiece 210 can be rotated at a speed of about 30 RPM.
The methods described above with reference to
From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the spirit and scope of the invention. For example, methods and features shown and/or described in the context of certain embodiments of the invention can be eliminated, combined or re-ordered in other embodiments. Accordingly, the invention is not limited except as by the appended claims.
This application is a continuation of U.S. application Ser. No. 12/488,062 filed Jun. 19, 2009, which is a divisional of U.S. application Ser. No. 10/933,053 filed Sep. 1, 2004, now U.S. Pat. No. 7,566,391, each of which is incorporated herein by reference in its entirety.
Number | Name | Date | Kind |
---|---|---|---|
2315695 | Faust | Apr 1943 | A |
2516105 | der Mateosian | Jul 1950 | A |
3239439 | Helmke | Mar 1966 | A |
3334210 | Williams et al. | Aug 1967 | A |
4613417 | Laskowski et al. | Sep 1986 | A |
4839005 | Katsumoto et al. | Jun 1989 | A |
5098533 | Duke et al. | Mar 1992 | A |
5162248 | Dennison et al. | Nov 1992 | A |
5244534 | Yu et al. | Sep 1993 | A |
5300155 | Sandhu et al. | Apr 1994 | A |
5344539 | Shinogi et al. | Sep 1994 | A |
5562529 | Kishii et al. | Oct 1996 | A |
5567300 | Datta et al. | Oct 1996 | A |
5575885 | Hirabayashi et al. | Nov 1996 | A |
5618381 | Doan et al. | Apr 1997 | A |
5624300 | Kishii et al. | Apr 1997 | A |
5676587 | Landers et al. | Oct 1997 | A |
5681423 | Sandhu et al. | Oct 1997 | A |
5780358 | Zhou et al. | Jul 1998 | A |
5800248 | Pant et al. | Sep 1998 | A |
5807165 | Uzoh et al. | Sep 1998 | A |
5840629 | Carpio | Nov 1998 | A |
5843818 | Joo et al. | Dec 1998 | A |
5846398 | Carpio | Dec 1998 | A |
5863307 | Zhou et al. | Jan 1999 | A |
5888866 | Chien | Mar 1999 | A |
5897375 | Watts et al. | Apr 1999 | A |
5911619 | Uzoh et al. | Jun 1999 | A |
5930699 | Bhatia | Jul 1999 | A |
5934980 | Koos et al. | Aug 1999 | A |
5952687 | Kawakubo et al. | Sep 1999 | A |
5954975 | Cadien et al. | Sep 1999 | A |
5954997 | Kaufman et al. | Sep 1999 | A |
5972792 | Hudson | Oct 1999 | A |
5993637 | Hisamatsu et al. | Nov 1999 | A |
6001730 | Farkas et al. | Dec 1999 | A |
6007695 | Knall et al. | Dec 1999 | A |
6010964 | Glass | Jan 2000 | A |
6024856 | Haydu et al. | Feb 2000 | A |
6033953 | Aoki et al. | Mar 2000 | A |
6039633 | Chopra | Mar 2000 | A |
6046099 | Cadien et al. | Apr 2000 | A |
6051496 | Jang | Apr 2000 | A |
6060386 | Givens | May 2000 | A |
6060395 | Skrovan et al. | May 2000 | A |
6063306 | Kaufman et al. | May 2000 | A |
6066030 | Uzoh | May 2000 | A |
6066559 | Gonzalez et al. | May 2000 | A |
6068787 | Grumbine et al. | May 2000 | A |
6077412 | Ting et al. | Jun 2000 | A |
6083840 | Mravic et al. | Jul 2000 | A |
6100197 | Hasegawa | Aug 2000 | A |
6103096 | Datta et al. | Aug 2000 | A |
6103628 | Talieh | Aug 2000 | A |
6103636 | Zahorik et al. | Aug 2000 | A |
6115233 | Seliskar et al. | Sep 2000 | A |
6117781 | Lukanc et al. | Sep 2000 | A |
6121152 | Adams et al. | Sep 2000 | A |
6132586 | Adams et al. | Oct 2000 | A |
6143155 | Adams et al. | Nov 2000 | A |
6162681 | Wu | Dec 2000 | A |
6171467 | Weihs et al. | Jan 2001 | B1 |
6174425 | Simpson et al. | Jan 2001 | B1 |
6176992 | Talieh | Jan 2001 | B1 |
6180947 | Stickel et al. | Jan 2001 | B1 |
6187651 | Oh | Feb 2001 | B1 |
6190494 | Dow | Feb 2001 | B1 |
6196899 | Chopra et al. | Mar 2001 | B1 |
6197182 | Kaufman et al. | Mar 2001 | B1 |
6206756 | Chopra et al. | Mar 2001 | B1 |
6218309 | Miller et al. | Apr 2001 | B1 |
6250994 | Chopra et al. | Jun 2001 | B1 |
6259128 | Adler et al. | Jul 2001 | B1 |
6273786 | Chopra et al. | Aug 2001 | B1 |
6276996 | Chopra | Aug 2001 | B1 |
6280581 | Cheng | Aug 2001 | B1 |
6287974 | Miller | Sep 2001 | B1 |
6299741 | Sun et al. | Oct 2001 | B1 |
6303956 | Sandhu et al. | Oct 2001 | B1 |
6313038 | Chopra et al. | Nov 2001 | B1 |
6322422 | Satou | Nov 2001 | B1 |
6328632 | Chopra | Dec 2001 | B1 |
6368184 | Beckage | Apr 2002 | B1 |
6368190 | Easter et al. | Apr 2002 | B1 |
6379223 | Sun et al. | Apr 2002 | B1 |
6395152 | Wang | May 2002 | B1 |
6395607 | Chung | May 2002 | B1 |
6416647 | Dordi et al. | Jul 2002 | B1 |
6455370 | Lane | Sep 2002 | B1 |
6461911 | Ahn et al. | Oct 2002 | B2 |
6464855 | Chadda et al. | Oct 2002 | B1 |
6504247 | Chung | Jan 2003 | B2 |
6515493 | Adams et al. | Feb 2003 | B1 |
6537144 | Tsai et al. | Mar 2003 | B1 |
6551935 | Sinha et al. | Apr 2003 | B1 |
6599806 | Lee | Jul 2003 | B2 |
6603117 | Corrado et al. | Aug 2003 | B2 |
6605539 | Lee et al. | Aug 2003 | B2 |
6607988 | Yunogami et al. | Aug 2003 | B2 |
6620037 | Kaufman et al. | Sep 2003 | B2 |
6632335 | Kunisawa et al. | Oct 2003 | B2 |
6653226 | Reid | Nov 2003 | B1 |
6689258 | Lansford et al. | Feb 2004 | B1 |
6693036 | Nogami et al. | Feb 2004 | B1 |
6705926 | Zhou et al. | Mar 2004 | B2 |
6722942 | Lansford et al. | Apr 2004 | B1 |
6722950 | Dabral et al. | Apr 2004 | B1 |
6726823 | Wang et al. | Apr 2004 | B1 |
6736952 | Emesh et al. | May 2004 | B2 |
6753250 | Hill et al. | Jun 2004 | B1 |
6776693 | Duboust et al. | Aug 2004 | B2 |
6780772 | Uzoh et al. | Aug 2004 | B2 |
6797623 | Sato et al. | Sep 2004 | B2 |
6808617 | Sato et al. | Oct 2004 | B2 |
6811680 | Chen et al. | Nov 2004 | B2 |
6846227 | Sato et al. | Jan 2005 | B2 |
6848970 | Manens et al. | Feb 2005 | B2 |
6852630 | Basol et al. | Feb 2005 | B2 |
6858124 | Zazzera et al. | Feb 2005 | B2 |
6867136 | Basol et al. | Mar 2005 | B2 |
6867448 | Lee et al. | Mar 2005 | B1 |
6881664 | Catabay et al. | Apr 2005 | B2 |
6884338 | Kesari et al. | Apr 2005 | B2 |
6893328 | So | May 2005 | B2 |
6899804 | Duboust et al. | May 2005 | B2 |
6951599 | Yahalom et al. | Oct 2005 | B2 |
6977224 | Dubin et al. | Dec 2005 | B2 |
7074113 | Moore | Jul 2006 | B1 |
7078308 | Lee et al. | Jul 2006 | B2 |
7094131 | Lee et al. | Aug 2006 | B2 |
7112121 | Lee et al. | Sep 2006 | B2 |
7112122 | Lee et al. | Sep 2006 | B2 |
7129160 | Chopra | Oct 2006 | B2 |
7153777 | Lee | Dec 2006 | B2 |
7192335 | Lee et al. | Mar 2007 | B2 |
7229535 | Wang et al. | Jun 2007 | B2 |
20010035354 | Ashjaee et al. | Nov 2001 | A1 |
20020025759 | Lee et al. | Feb 2002 | A1 |
20020025760 | Lee et al. | Feb 2002 | A1 |
20020025763 | Lee et al. | Feb 2002 | A1 |
20020104764 | Banerjee et al. | Aug 2002 | A1 |
20020115283 | Ho et al. | Aug 2002 | A1 |
20030054729 | Lee et al. | Mar 2003 | A1 |
20030064669 | Basol et al. | Apr 2003 | A1 |
20030109198 | Lee et al. | Jun 2003 | A1 |
20030113996 | Nogami et al. | Jun 2003 | A1 |
20030127320 | Emesh et al. | Jul 2003 | A1 |
20030129927 | Lee et al. | Jul 2003 | A1 |
20030178320 | Liu et al. | Sep 2003 | A1 |
20030226764 | Moore et al. | Dec 2003 | A1 |
20030234184 | Liu et al. | Dec 2003 | A1 |
20040043582 | Chopra | Mar 2004 | A1 |
20040043629 | Lee et al. | Mar 2004 | A1 |
20040043705 | Lee et al. | Mar 2004 | A1 |
20040154931 | Hongo et al. | Aug 2004 | A1 |
20040192052 | Mukherjee et al. | Sep 2004 | A1 |
20040259479 | Sevilla | Dec 2004 | A1 |
20050016861 | Laursen et al. | Jan 2005 | A1 |
20050020004 | Chopra | Jan 2005 | A1 |
20050020192 | Lee et al. | Jan 2005 | A1 |
20050034999 | Moore et al. | Feb 2005 | A1 |
20050035000 | Moore et al. | Feb 2005 | A1 |
20050056550 | Lee et al. | Mar 2005 | A1 |
20050059324 | Lee et al. | Mar 2005 | A1 |
20050133379 | Basol et al. | Jun 2005 | A1 |
20050173260 | Basol et al. | Aug 2005 | A1 |
20050178743 | Manens et al. | Aug 2005 | A1 |
20050196963 | Lee | Sep 2005 | A1 |
20060042956 | Lee et al. | Mar 2006 | A1 |
20060163083 | Andricacos et al. | Jul 2006 | A1 |
20060189139 | Lee | Aug 2006 | A1 |
20060191800 | Moore | Aug 2006 | A1 |
20060199351 | Lee et al. | Sep 2006 | A1 |
20060208322 | Lee et al. | Sep 2006 | A1 |
20060217040 | Moore | Sep 2006 | A1 |
Number | Date | Country |
---|---|---|
0459397 | Dec 1991 | EP |
1 123 956 | Aug 2001 | EP |
1241129 | Sep 1989 | JP |
06120182 | Apr 1994 | JP |
10335305 | Dec 1998 | JP |
11-145273 | May 1999 | JP |
2000-269318 | Sep 2000 | JP |
2001077117 | Mar 2001 | JP |
516471 | Jan 2003 | TW |
0026443 | May 2000 | WO |
0028586 | May 2000 | WO |
0032356 | Jun 2000 | WO |
0059008 | Oct 2000 | WO |
0059682 | Oct 2000 | WO |
02064314 | Aug 2002 | WO |
02085570 | Oct 2002 | WO |
03072672 | Sep 2003 | WO |
Entry |
---|
Aboaf, J.A. and R.W. Broadie, IBM Technical Disclosure Bulletin, Rounding of Square-Shape Holes in Silicon Wafers, vol. 19, No. 8, p. 3042, Jan. 1977, XP-002235690, NN 77013042. |
ATMI, Inc., adapted from a presentation at the Semicon West '99 Low Dielectric Materials Technology Conference, San Francisco, California, Jul. 12, 1999, pp. 13-25. |
Bassous, E., IBM Technical Disclosure Bulletin, Low Temperature Methods for Rounding Silicon Nozzles, vol. 20, No. 2, Jul. 1977, pp. 810-811, XP-002235692, NN 7707810. |
Bernhardt, A.F., R.J. Contolini, and S.T. Mayer, “Electrochemical Planarization for Multi-Level Metallization of Microcircuitry,” CircuiTree, vol. 8, No. 10, pp. 38, 40, 42, 44, 46, and 48, Oct. 1995. |
D'Heurle, F.M. and K.C. Park, IBM Technical Disclosure Bulletin, Electrolytic Process for Metal Pattern Generation, vol. 17, No. 1, pp. 271-272, Jun. 1974, XP-002235691, NN 7406271. |
Frankenthal, R.P. and Eaton, D.H., “Electroetching of Platinum in the Titanium-Platinum-Gold Metallization Silicon Integrated Circuits,” Journal of the Electrochemical Society, vol. 123, No. 5, pp. 703-706, May 1976, Pennington, New Jersey. |
Huang, C.S. et al., “A Novel UV Baking Process to Improve DUV Photoresist Hardness,” pp. 135-138, Proceedings of the 1999 International Symposium, VLSI Technology, Systems, and Applications: Proceedings of Technical Papers: Jun. 8-10, 1999, Taipei, Taiwan, Institute of Electrical and Electronics Engineers, Inc., Sep. 1999. |
Juchniewicz, R. et al. “Influence of Pulsed Current Plantinised Titanium and Tantalum Anode Durability,” Internaitonal Congress Metallic Corrosion, Proceedings—vol. 3, pp. 449-453, Toronto, Jun. 3/7, 1984. |
Kondo, S. et al., “Abrasive-Free Polishing for Copper Damascene Interconnection,” Journal of the Electrochemical Society, vol. 147, No. 10, pp. 3907-3913, The Electrochemical Society, Inc., Pennington, New Jersey, 2000. |
McGraw-Hill, “Chemical bonding,” Concise Encyclopedia of Science & Technology, Fourth Edition, Sybil P. Parker, Editor in Chief, p. 367, McGraw-Hill, New York, New York, 1998. |
Micro Photonics, Inc. CSM Application Bulletin. Low-load Micro Scratch Tester (MST) for characterization of thin polymer films [online]. 3 pages. Retrieved from the Internet Jul. 25, 2002. <http://www.microphotonics.com/mstABpoly.html>. |
Micro Photonics, Inc. CSM Nano Hardness Tester [online]. 6 pages. Retrieved from the Internet, Jul. 29, 2002. <http://www.microphotonics.com/nht.html>. |
PhysicsWorld. Hard Materials (excerpt of Superhard superlattices) [online]. S. Barnett and A. Madan, Physics World, Jan. 1998, Institute of Physics Publishing Ltd., Bristol, United Kingdom. Retrieved from the Internet, Jul. 29, 2002 <http://physicsweb.org/box/world/11/1/11/world-11-1-11-1>. |
Wolf, S. et al. Silicon Processing for the VLSI Era, vol. 1: Process Technology, pp. 188-189, Lattice Press, 1986. |
Number | Date | Country | |
---|---|---|---|
20130102154 A1 | Apr 2013 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 12488062 | Jun 2009 | US |
Child | 13711432 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 10933053 | Sep 2004 | US |
Child | 12488062 | US |