Methods for controlling stray fields of magnetic features using magneto-elastic anisotropy

Information

  • Patent Grant
  • 9934811
  • Patent Number
    9,934,811
  • Date Filed
    Monday, June 23, 2014
    9 years ago
  • Date Issued
    Tuesday, April 3, 2018
    6 years ago
Abstract
Systems and methods for controlling stray fields of a magnetic feature are provided. One such method can involve selecting a plurality of materials for a magnetic feature, selecting a plurality of additives, combining the plurality of materials for the magnetic feature and the plurality of additives in an electrolyte solution to form a combined solution, adding nitrogen to the combined solution, degassing the combined solution, depositing the combined solution as a thin film on a wafer using pulse plating, and lapping the thin film to form an edge of the magnetic feature. In several embodiments, the magnetic feature is a component of a magnetic transducer such as a writer pole, a reader shield, or a writer shield.
Description
BACKGROUND

Magnetic storage systems, such as a hard disk drive (HDD), are utilized in a wide variety of devices in both stationary and mobile computing environments. Examples of devices that incorporate magnetic storage systems include desktop computers, portable notebook computers, portable hard disk drives, digital versatile disc (DVD) players, high definition television (HDTV) receivers, vehicle control systems, cellular or mobile telephones, television set top boxes, digital cameras, digital video cameras, video game consoles, and portable media players.


A typical disk drive includes magnetic storage media in the form of one or more flat disks. The disks are generally formed of two main substances, namely, a substrate material that gives it structure and rigidity, and a magnetic media coating that holds the magnetic impulses or moments that represent data. Such disk drives also typically include a read head and a write head (e.g., writer), generally in the form of a magnetic transducer which can sense and/or change the magnetic fields stored on the disks.


Main pole domain lock up, on track erasure, and side track erasure are typical writer reliability issues. All of these issues are related to writer/head stray fields, which can erase the media unintentionally. As such, a method for controlling stray fields of a writer or other magnetic feature is needed.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a top schematic view of a disk drive including a write head that has been fabricated to minimize stray fields in accordance with one embodiment of the invention.



FIG. 2 is a conceptual schematic diagram of a cube of magnetic materials illustrating some basic physics associated with magneto-elastic energy anisotropy and related writer fabrication characteristics that can be controlled to minimize stray fields in accordance with one embodiment of the invention.



FIG. 3 is a flow chart of a process for controlling stray fields of a magnetic feature that can be used to fabricate a write head in accordance with one embodiment of the invention.



FIGS. 4a, 4b, 4c are schematic cross sectional views of a writer having a writer pole formed of tensile materials disposed within a trench formed of compressive materials in accordance with one embodiment of the invention.



FIG. 5 is a graph of stress versus film Fe concentration for a NiFe film write head subjected to various pH levels and temperatures during write head fabrication in accordance with one embodiment of the invention.



FIG. 6 is a graph of stress versus film Fe concentration for a pulse plated FeCo film write head that was subjected to annealing and pulse plating during write head fabrication in accordance with one embodiment of the invention.



FIG. 7a is a graph of the probability of a domain lock up issue for a write head that has been fabricated to minimize stray fields in accordance with one embodiment of the invention.



FIG. 7b is a graph of domain lock up (DLU) failure rate for a write head that has been fabricated to minimize stray fields in accordance with one embodiment of the invention.





DETAILED DESCRIPTION

In order to address the stray field problem, one can enhance the magnetic anisotropy to the preferred direction. Most commonly, designers might utilize the magnetic shape anisotropy, and/or crystalline anisotropy to achieve something like this. However, due to the complexity of three dimensional (3-D) structures in current perpendicular magnetic writers, most of the time the shape anisotropy is not in the preferred direction. The 3-D device fabrication also limits the implementation of the crystalline anisotropy.


Referring now to the drawings, embodiments of systems and methods for controlling these stray fields of a magnetic feature are illustrated. The methods can involve selecting a plurality of materials for a magnetic feature, selecting a plurality of additives, combining the plurality of materials for the magnetic feature and the plurality of additives in an electrolyte solution to form a combined solution, adding nitrogen (N) to the combined solution, degassing the combined solution, depositing the combined solution as a thin film on a wafer using pulse plating, and lapping the thin film to form an edge of the magnetic feature. In several embodiments, the magnetic feature is a component of a magnetic transducer such as a writer pole, a reader shield, or a writer shield. The systems can involve a magnetic transducer implemented with one of the methods for controlling stray fields of the magnetic feature (e.g., write head).



FIG. 1 is a top schematic view of a disk drive 100 including a write head (e.g., contained with a slider) 108 that has been fabricated to minimize stray fields in accordance with one embodiment of the invention. Disk drive 100 may include one or more of the disks/media 102 to store data. Disks/media 102 reside on a spindle assembly 104 that is mounted to drive housing 106. Data may be stored along tracks 107 in the magnetic recording layer of disk 102. The reading and writing of data is accomplished with the slider/head 108 that can have both read and write elements. The write element (e.g., write head or writer) is used to alter the properties of the magnetic recording layer of disk 102 and thereby write information thereto. In one embodiment, the read element of the head 108 may have tunnel magneto-resistance (TMR) elements.


In operation, a spindle motor (not shown) rotates the spindle assembly 104, and thereby rotates disk 102 to position head 108 at a particular location along a desired disk track 107. The position of head 108 relative to disk 102 may be controlled by position control circuitry 110.



FIG. 2 is a conceptual schematic diagram of a cube of magnetic materials illustrating some basic physics associated with magneto-elastic energy anisotropy and related writer fabrication characteristics that can be controlled to minimize stray fields in accordance with one embodiment of the invention. A tensile stress (σ) is applied to the unit cube, and a magnetization (Ms) of the magnetic materials is initially parallel to the stress. Let Ms then rotate through an angle θ. As it does so, the material will contract along the stress axis when a magneto-striction (λ) is positive. This contraction, in the presence of a tensile stress, means that work is done on the materials. This work is stored as magneto-elastic energy (shifting the system to higher energy state, which may not be preferable) in the materials and is given by the equation:

dEms=−σdλ

for an infinitesimal rotation of Ms.


To maximize the utilization of magneto-elastic anisotropy and thereby minimize the stray field in the magnetic head, aspects of the invention involve a design process to control the materials and structure to meet preselected requirements, such as those illustrated in FIG. 2. For high density type magnetic writer heads, the structure and the materials can be carefully selected and fabricated (e.g., designed) to ensure that no stray field or minimal stray fields come out from the air bearing surface (ABS). In such case, issues like domain lock up (DLU), side track erasure or on track erasure can be reduced or prevented all together. In one embodiment, these goals can be achieved by utilizing the magneto-elastic anisotropy of the system.



FIG. 3 is a flow chart of a process 200 for controlling stray fields of a magnetic feature that can be used to fabricate a write head in accordance with one embodiment of the invention. In particular embodiments, the process 200 can be used to fabricate the write head of FIG. 1. In some embodiments, the magnetic feature can be a component of a magnetic transducer such as a writer pole, a reader shield or a writer shield. In block 202, the process selects a plurality of materials for a magnetic feature. In block 204, the process selects a plurality of additives. In several embodiments, the process selects the materials (e.g., Fe) such that a product of a magneto-striction of the materials for the magnetic feature and a tensile stress of the materials for the magnetic feature is a positive value. In one such case, the material selection involves selecting a dopant and/or the plurality of additives that such that the product of the magneto-striction and the tensile stress is the positive value. The dopants can include one or more materials such as S, O, H, N, C, and combinations of those materials. For example, the process can add one or more of S at about 5×10^20 atoms per cm3, O at about 5×10^20 atoms per cm3, H at about 5×10^20 atoms per cm3, and/or N at about 5×10^20 atoms per cm3. In one such embodiment, providing higher H and lower S can result in higher stress for the pole materials. In one embodiment, the process can select the materials for the writer pole and one or more organic additives to facilitate design features such as high moment, softness and high stress.


In one embodiment, the plurality of additives includes hydroxylmethyl-P-tolysulfone (HPT) in a concentration between about 0 to about 10 parts per million. In other embodiments, other suitable additives can be used. In block 206, the process combines the plurality of materials for the magnetic feature and the plurality of additives in an electrolyte solution to form a combined solution. In block 208, the process adds nitrogen (N) to the combined solution. In one embodiment, adding the nitrogen can effectively remove oxygen from the combined solution. In several embodiments, the process adds the write pole materials and the organic additives to the electrolyte solution with about 0 to about 0.05 ppm of dissolved oxygen.


In block 210, the process degasses the combined solution. In one embodiment, the degassing can remove oxygen and N from the combined solution. In one embodiment, the degassing involves applying a vacuum pressure to a membrane in contact with the combined solution. In such case, the membrane can be configured to allow gas to pass but not liquid. More specifically, the membrane can be configured to allow gas to escape the electrolyte solution but prevent passage of any liquid, thereby helping to eliminate any gas, such as oxygen, from the electrolyte solution. In one embodiment, the electrolyte solution has about 0 to about 0.05 ppm of Fe3+ (e.g., minimal Fe3+ since the oxygen has been minimized or eliminated).


In block 212, the process deposits the combined solution as a thin film on a wafer using pulse plating. Pulse plating of these types of pole materials (e.g., to minimize surface roughness) is described in co-pending U.S. patent application Ser. No. 13/423,009, filed on Mar. 16, 2012, and entitled, “METHOD OF ELECTROPLATING IRON-COBALT ALLOY FILMS USING PULSED ELECTROPLATING METHODS”, the entire content of which is incorporated herein by reference.


In block 214, the process laps the thin film to form an edge of the magnetic feature. In several embodiments, the lapping can optimize the directional stress as described above.


In several embodiments, the magnetic feature is a writer pole. In one such case, the plurality of materials for the magnetic feature can include CoFe having an Fe content between about 50 and about 75 percent. In another such case, the plurality of materials for the magnetic feature include CoFe with a preselected Fe content, where the plurality of additives are selected to achieve the preselected Fe content.


In several embodiments, the magnetic feature includes Fe and the process further provides a sacrificial anode immersed in the combined solution to reverse oxidation of the Fe. In one such case, the magnetic feature includes Fe2+ and the process further provides the sacrificial anode immersed in the combined solution to reverse oxidation of the Fe3+.


In several embodiments, the majority of the writer magnetic materials are electroplated (by volume) alloys, and the properties of electroplated magnetic alloys can be easily tuned by altering the plating process. In several such embodiments, aspects of this invention can utilize the high tensile stress of these magnetic alloys.


In one embodiment, the process of FIG. 3 can perform the sequence of actions in a different order. In another embodiment, the process can skip one or more of the actions. In other embodiments, one or more of the actions are performed simultaneously. In some embodiments, additional actions can be performed.



FIGS. 4a, 4b, 4c are schematic cross sectional views of a writer having a writer pole 302 formed of tensile materials (e.g., FeCo) disposed within a trench 304 formed of compressive materials (e.g., Al2O3) in accordance with one embodiment of the invention.


In one embodiment, the fabrication process of FIG. 3 can involve a different combination of stages. For example, in a first stage of a second exemplary process, the process can involve biasing a sign of the product of the material characteristics (product of magneto-striction and tensile stress or λσ) to configure the system magneto-elastic anisotropy to minimize or eliminate any stray fields. For example, with a positive product of λσ, σ should be parallel to the Ms direction to have the preferred magneto-elastic state (e.g., see FIG. 2 where the direction of Ms is close to being parallel to the direction of σ). However, for a negative product of λσ, σ would be at about 90 degrees relative to the Ms direction, which would not be preferred.


In one example embodiment for a perpendicular magnetic main writer pole where FeCo materials are used as high moment materials, the remanent Ms direction needs to be contained within a plane of the ABS surface, which can be defined as being along the x direction as depicted in FIG. 4b. In such case, since the plated FeCo materials for this example have a positive magneto-striction (λ), the σ (positive tensile stress) anisotropy can be developed to be as high as possible.


In a second stage of the second exemplary process, the writer structure can be formed with the stress anisotropy in the preferred direction. To introduce the stress anisotropy in the writer, the three dimensional structure can be formed by first constructing the trench, then backfilling the magnetic materials, and finally cutting (e.g., lapping or removing) one side of trench structure to relax the stress of backfilled materials inside the trench in that direction.


Still using the FeCo writer as an example, as described earlier, it may be preferable to have higher tensile stress in the writer application. By choosing high Young's Modulus type trench materials (compressive Al2O3 for example) with the good adhesion between the backfill materials and trench side wall, the backfilled FeCo tensile stress can be preserved. In fact, the FeCo tensile stress can be even higher after thermal annealing. At this stage of the second exemplary process, the system may have high isotropic stress, which may not benefit the design goal until after one side of the trench materials has been removed. After lapping through the trench along the ABS surface (see FIG. 4c for example), the backfilled FeCo high tensile stress gets relaxed in the direction normal to the ABS, which can provide the high stress anisotropy for the FeCo materials remaining in the trench. More precisely, FeCo materials will have strong tensile stress along the x direction in the trench, as shown in FIGS. 4a, 4b, and 4c.


In some embodiments, the thin film FeCo has improved corrosion properties (e.g., Ecorr is about −400 mV versus Ag/AgCl reference electrode). In one embodiment, the FeCo film resistivity is less than about 27 micro ohm cm at a film Fe concentration percentage of about 70%. In one embodiment, the HPT byproduct concentration is about 0 to about 10 ppm (0.01 g/l), and includes byproducts such as p-Toluenesulfinte and p-Toluenesulfonate.


In using the positive λ and positive σ for the FeCo pole materials, the constructed high anisotropy tensile stress (magneto-elastic energy anisotropy) can promote the Ms to stay in the x direction (e.g., the preferred low energy state that is roughly parallel to the ABS).


In a third stage of the second exemplary process, the pole material's increased tensile stress can result in stray fields with a preferential orientation (e.g., cross track but parallel to ABS or in the x direction in FIG. 4b). In one aspect for pole damascene, the higher the tensile stress of the FeCo pole materials, the better the writer pole (e.g., writer) will reduce the stray fields along the y direction, thereby reducing or eliminating the potential domain lock up at the pole tip.


In a fourth stage of the second exemplary process, the use of compressive pole materials may be considered. For highly compressive pole materials, the magneto-striction (λ) may need to be negative to have the same effect.


In a fifth stage of the second exemplary process, it can be considered whether a particular application needs to have stray fields come out of the trench lapping surface. If so, the negative λσ materials can be picked by increasing the stress number.


In a sixth stage of the second exemplary process, aspects of the invention can be considered for applications other than a writer. For example, the way to construct the three dimensional feature, the method to grow the property matched material, and the design to utilize the produced magneto-elastic energy term can be generalized for many applications. For magnetic recording, one or more of the magnetic shield layers in the head can benefit from the magnetic writer fabrication processes in a similar way. That is, they may benefit by controlling the stray fields to prevent the unintended erasure.



FIG. 5 is a graph of stress versus film Fe concentration for a NiFe film write head subjected to various pH levels and temperatures during write head fabrication in accordance with one embodiment of the invention. The first option (“Opt-1”) illustrates the NiFe film write head subjected to a pH level of 2.5 and a temperature of 22.5 degrees Celsius (C). The second option (“Opt-2”) illustrates the NiFe film write head subjected to a pH level of 2.5 and a temperature of 25 degrees C. The third option (“Opt-3”) illustrates the NiFe film write head subjected to a pH level of 2.8 and a temperature of 25 degrees C. As can be seen in FIG. 5, fitted polynomial lines have been superimposed on the data points for each of the three options.



FIG. 6 is a graph of stress versus film Fe concentration for a pulse plated FeCo film write head that was subjected to annealing and pulse plating during write head fabrication in accordance with one embodiment of the invention. One set of data shows the stress, in megapascal, with annealing and the other set of data shows the stress without annealing.


Thus, the stress versus film Fe concentration percentage for electroplated NiFe and FeCo are plotted in FIGS. 5 and 6 individually. Both charts indicate that the film stress is function of the film Fe concentration percentage, and that after the write head is thermally annealed, the tensile stress of those materials is further increased.


As an experiment, DC plated FeCo film (which can include properties such as low stress film and low magneto-elastic anisotropy) and pulse plated FeCo film (which can include properties such as high stress and high magneto-elastic anisotropy) have been deposited into a device damascene pole trench (e.g., made of alumina), for given positive magneto-striction FeCo materials. The high tensile stress pulse plated FeCo (as compared to the DC plated FeCo) is expected to have better aligned magnetization along the x direction (within the ABS surface). Backend device domain lock up (DLU) test results have confirmed this, as shown in FIGS. 7a and 7b.



FIG. 7a is a graph of the probability of a domain lock up issue for a write head that has been fabricated to minimize stray fields (e.g., high stress CoFe with varying material concentrations) in accordance with one embodiment of the invention. More specifically, the pulse plating is consistently 2.4 Tesla, while the CoFe has varying Fe percentages of 66, 69, 72, and 75. A reference write head performance is shown for a standard write head with DC plating (see “DC-plating POR” and “POR” curve).



FIG. 7b is a graph of domain lock up (DLU) failure rate (FR in percent) for a write head that has been fabricated to minimize stray fields (e.g., high stress CoFe with varying material concentrations) in accordance with one embodiment of the invention. Similar to the graph of FIG. 7a, the graph of FIG. 7b includes data from write heads involving pulse plating consistently at 2.4 Tesla, while the CoFe has varying Fe percentages of 66, 69, 72, and 75. A reference write head performance is shown for a standard write head with DC plating (see “DC-plating POR” and “POR” curve).


In several embodiments, pulse plated high magneto-elastic energy (high stress) materials has significantly improved domain lock up (DLU) performance.


Most recently, these high magneto-elastic anisotropy (high stress) pulse plated FeCo pole materials have been qualified as being suitable for certain writer pole applications. Magneto-striction is an intrinsic material property, and for most high moment electroplated soft magnetic alloys, it has a positive value. Alloy stress is function of film Fe concentration percentage. High Fe content in the film is one of the signatures of a high stress film which can be utilized to optimize the magneto-elastic energy for head overall stability improvement.


The terms “above,” “below,” and “between” as used herein refer to a relative position of one layer with respect to other layers. As such, one layer deposited or disposed above or below another layer may be directly in contact with the other layer or may have one or more intervening layers. Moreover, one layer deposited or disposed between layers may be directly in contact with the layers or may have one or more intervening layers.


In several embodiments, the deposition of materials described herein can be performed using a variety of deposition sub-processes, including, but not limited to physical vapor deposition (PVD), sputter deposition and ion beam deposition, and chemical vapor deposition (CVD) including plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD) and atomic layer chemical vapor deposition (ALCVD). In other embodiments, other suitable deposition techniques known in the art may also be used.


While the above description contains many specific embodiments of the invention, these should not be construed as limitations on the scope of the invention, but rather as examples of specific embodiments thereof. Accordingly, the scope of the invention should be determined not by the embodiments illustrated, but by the appended claims and their equivalents.


The various features and processes described above may be used independently of one another, or may be combined in various ways. All possible combinations and sub-combinations are intended to fall within the scope of this disclosure. In addition, certain method, event, state or process blocks may be omitted in some implementations. The methods and processes described herein are also not limited to any particular sequence, and the blocks or states relating thereto can be performed in other sequences that are appropriate. For example, described tasks or events may be performed in an order other than that specifically disclosed, or multiple may be combined in a single block or state. The example tasks or events may be performed in serial, in parallel, or in some other suitable manner. Tasks or events may be added to or removed from the disclosed example embodiments. The example systems and components described herein may be configured differently than described. For example, elements may be added to, removed from, or rearranged compared to the disclosed example embodiments.

Claims
  • 1. A method for controlling stray fields of a magnetic feature, the method comprising: determining a product of a magneto-striction and a tensile stress for candidate materials for a magnetic feature;selecting a plurality of materials for the magnetic feature from the candidate materials such that the product of the magneto-striction and the tensile stress of the magnetic feature is a positive value;selecting a plurality of additives;combining the plurality of materials for the magnetic feature and the plurality of additives in an electrolyte solution to form a combined solution;adding N to the combined solution;degassing the combined solution;depositing a thin film on a wafer from the combined solution using pulse plating to form the magnetic feature having the positive value; andlapping the thin film to form an edge of the magnetic feature.
  • 2. The method of claim 1, wherein the magnetic feature is a component of a magnetic transducer selected from the group consisting of a writer pole, a reader shield, and a writer shield.
  • 3. The method of claim 1, wherein the selecting the plurality of materials for the magnetic feature from the candidate materials such that the product of the magneto-striction and the tensile stress of the magnetic feature is the positive value further comprises selecting a dopant and/or the plurality of additives such that the product of the magneto-striction and the tensile stress is the positive value.
  • 4. The method of claim 3, wherein the dopant is a material selected from the group consisting of S, O, H, N, C, and combinations thereof.
  • 5. The method of claim 1, wherein the plurality of additives comprise hydroxylmethyl-P-tolysulfone (HPT) in a concentration between about 0 to about 10 parts per million.
  • 6. The method of claim 1: wherein the magnetic feature comprises a writer pole; andwherein the plurality of materials for the magnetic feature comprise CoFe having an Fe content between about 50 and about 75 percent.
  • 7. The method of claim 1: wherein the magnetic feature comprises a writer pole;wherein the plurality of materials for the magnetic feature comprise CoFe with a preselected Fe content; andwherein the selecting the plurality of additives comprises selecting the plurality of additives to achieve the preselected Fe content.
  • 8. The method of claim 1: wherein the adding the N to the combined solution comprises adding the N to the combined solution to remove oxygen from the combined solution; andwherein the degassing the combined solution comprises degassing the combined solution to remove oxygen and N from the combined solution.
  • 9. The method of claim 1, wherein the degassing the combined solution comprises applying a vacuum pressure to a membrane in contact with the combined solution.
  • 10. The method of claim 1: wherein the magnetic feature comprises Fe; andthe method further comprising providing a sacrificial anode immersed in the combined solution to reverse oxidation of Fe3+ present in the combined solution.
  • 11. The method of claim 10: wherein the plurality of materials comprise Fe2+; andwherein the sacrificial anode comprises an active metal and is immersed in the combined solution to reverse oxidation of the Fe3+.
  • 12. The method of claim 1, wherein the magnetic feature comprises a writer pole.
  • 13. The method of claim 12: wherein the selecting the plurality of materials for the magnetic feature from the candidate materials such that the product of the magneto-striction and the tensile stress of the magnetic feature is the positive value further comprises selecting a dopant and/or the plurality of additives such that the product of the magneto-striction and the tensile stress is the positive value; andwherein the dopant is a material selected from the group consisting of S, O, H, N, C, and combinations thereof.
  • 14. The method of claim 13, wherein the plurality of additives comprise hydroxylmethyl-P-tolysulfone (HPT) in a concentration between about 0 to about 10 parts per million.
  • 15. The method of claim 14: wherein the plurality of materials for the magnetic feature comprise CoFe having an Fe content between about 50 and about 75 percent.
  • 16. The method of claim 15, wherein the degassing the combined solution comprises applying a vacuum pressure to a membrane in contact with the combined solution.
  • 17. The method of claim 16: the method further comprising providing a sacrificial anode immersed in the combined solution to reverse oxidation of Fe3+ present in the combined solution.
  • 18. The method of claim 17: wherein the plurality of materials comprise Fe2+; andwherein the sacrificial anode comprises an active metal and is immersed in the combined solution to reverse oxidation of the Fe3+.
  • 19. The method of claim 1: wherein the selecting the plurality of materials for the magnetic feature from the candidate materials such that the product of the magneto-striction and the tensile stress of the magnetic feature is the positive value further comprises selecting a dopant and/or the plurality of additives such that the product of the magneto-striction and the tensile stress is the positive value; andwherein the dopant comprises S, O, H, and N.
  • 20. The method of claim 1: wherein the selecting, if the product is the positive value, the plurality of materials for the magnetic feature from the candidate materials further comprises selecting a dopant and/or the plurality of additives such that the product of the magneto-striction and the tensile stress is the positive value; andwherein the dopant comprises S and H, wherein a concentration of H is greater than a concentration of S.
CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority to and the benefit of U.S. Provisional Application No. 61/949,390, filed on Mar. 7, 2014, entitled, “METHODS FOR CONTROLLING STRAY FIELDS OF A MAGNETIC HEAD USING MAGNETO-ELASTIC ANISOTROPY”, the entire content of which is incorporated herein by reference.

US Referenced Citations (627)
Number Name Date Kind
4053373 McMullen Oct 1977 A
4661216 Anderson Apr 1987 A
5314596 Shukovsky et al. May 1994 A
6016290 Chen et al. Jan 2000 A
6018441 Wu et al. Jan 2000 A
6025978 Hoshi et al. Feb 2000 A
6025988 Yan Feb 2000 A
6032353 Hiner et al. Mar 2000 A
6033532 Minami Mar 2000 A
6034851 Zarouri et al. Mar 2000 A
6043959 Crue et al. Mar 2000 A
6046885 Aimonetti et al. Apr 2000 A
6049650 Jerman et al. Apr 2000 A
6055138 Shi Apr 2000 A
6058094 Davis et al. May 2000 A
6073338 Liu et al. Jun 2000 A
6078479 Nepela et al. Jun 2000 A
6081499 Berger et al. Jun 2000 A
6094803 Carlson et al. Aug 2000 A
6099362 Viches et al. Aug 2000 A
6103073 Thayamballi Aug 2000 A
6108166 Lederman Aug 2000 A
6118629 Huai et al. Sep 2000 A
6118638 Knapp et al. Sep 2000 A
6125018 Takagishi et al. Sep 2000 A
6130779 Carlson et al. Oct 2000 A
6134089 Barr et al. Oct 2000 A
6136166 Shen et al. Oct 2000 A
6137661 Shi et al. Oct 2000 A
6137662 Huai et al. Oct 2000 A
6160684 Heist et al. Dec 2000 A
6163426 Nepela et al. Dec 2000 A
6166891 Lederman et al. Dec 2000 A
6173486 Hsiao et al. Jan 2001 B1
6175476 Huai et al. Jan 2001 B1
6178066 Barr Jan 2001 B1
6178070 Hong et al. Jan 2001 B1
6178150 Davis Jan 2001 B1
6181485 He Jan 2001 B1
6181525 Carlson Jan 2001 B1
6185051 Chen et al. Feb 2001 B1
6185077 Tong et al. Feb 2001 B1
6185081 Simion et al. Feb 2001 B1
6188549 Wiitala Feb 2001 B1
6190764 Shi et al. Feb 2001 B1
6193584 Rudy et al. Feb 2001 B1
6195229 Shen et al. Feb 2001 B1
6198608 Hong et al. Mar 2001 B1
6198609 Barr et al. Mar 2001 B1
6201673 Rottmayer et al. Mar 2001 B1
6204998 Katz Mar 2001 B1
6204999 Crue et al. Mar 2001 B1
6212153 Chen et al. Apr 2001 B1
6215625 Carlson Apr 2001 B1
6219205 Yuan et al. Apr 2001 B1
6221218 Shi et al. Apr 2001 B1
6222707 Huai et al. Apr 2001 B1
6229782 Wang et al. May 2001 B1
6230959 Heist et al. May 2001 B1
6233116 Chen et al. May 2001 B1
6233125 Knapp et al. May 2001 B1
6237215 Hunsaker et al. May 2001 B1
6252743 Bozorgi Jun 2001 B1
6255721 Roberts Jul 2001 B1
6258468 Mahvan et al. Jul 2001 B1
6266216 Hikami et al. Jul 2001 B1
6271604 Frank, Jr. Aug 2001 B1
6275354 Huai et al. Aug 2001 B1
6277505 Shi et al. Aug 2001 B1
6282056 Feng et al. Aug 2001 B1
6296955 Hossain et al. Oct 2001 B1
6297955 Frank, Jr. et al. Oct 2001 B1
6304414 Crue, Jr. et al. Oct 2001 B1
6307715 Berding et al. Oct 2001 B1
6310746 Hawwa et al. Oct 2001 B1
6310750 Hawwa et al. Oct 2001 B1
6317290 Wang et al. Nov 2001 B1
6317297 Tong et al. Nov 2001 B1
6322911 Fukagawa et al. Nov 2001 B1
6330136 Wang et al. Dec 2001 B1
6330137 Knapp et al. Dec 2001 B1
6333830 Rose et al. Dec 2001 B2
6340533 Ueno et al. Jan 2002 B1
6349014 Crue, Jr. et al. Feb 2002 B1
6351355 Min et al. Feb 2002 B1
6353318 Sin et al. Mar 2002 B1
6353511 Shi et al. Mar 2002 B1
6356412 Levi et al. Mar 2002 B1
6359779 Frank, Jr. et al. Mar 2002 B1
6369983 Hong Apr 2002 B1
6376964 Young et al. Apr 2002 B1
6377535 Chen et al. Apr 2002 B1
6381095 Sin et al. Apr 2002 B1
6381105 Huai et al. Apr 2002 B1
6389499 Frank, Jr. et al. May 2002 B1
6392850 Tong et al. May 2002 B1
6396660 Jensen et al. May 2002 B1
6399179 Hanrahan et al. Jun 2002 B1
6400526 Crue, Jr. et al. Jun 2002 B2
6404600 Hawwa et al. Jun 2002 B1
6404601 Rottmayer et al. Jun 2002 B1
6404706 Stovall et al. Jun 2002 B1
6410170 Chen et al. Jun 2002 B1
6411522 Frank, Jr. et al. Jun 2002 B1
6417998 Crue, Jr. et al. Jul 2002 B1
6417999 Knapp et al. Jul 2002 B1
6418000 Gibbons et al. Jul 2002 B1
6418048 Sin et al. Jul 2002 B1
6421211 Hawwa et al. Jul 2002 B1
6421212 Gibbons et al. Jul 2002 B1
6424505 Lam et al. Jul 2002 B1
6424507 Lederman et al. Jul 2002 B1
6430009 Komaki et al. Aug 2002 B1
6430806 Chen et al. Aug 2002 B1
6433965 Gopinathan et al. Aug 2002 B1
6433968 Shi et al. Aug 2002 B1
6433970 Knapp et al. Aug 2002 B1
6437945 Hawwa et al. Aug 2002 B1
6445536 Rudy et al. Sep 2002 B1
6445542 Levi et al. Sep 2002 B1
6445553 Barr et al. Sep 2002 B2
6445554 Dong et al. Sep 2002 B1
6447935 Zhang et al. Sep 2002 B1
6448765 Chen et al. Sep 2002 B1
6451514 Iitsuka Sep 2002 B1
6452742 Crue et al. Sep 2002 B1
6452765 Mahvan et al. Sep 2002 B1
6456465 Louis et al. Sep 2002 B1
6459552 Liu et al. Oct 2002 B1
6462920 Karimi Oct 2002 B1
6466401 Hong et al. Oct 2002 B1
6466402 Crue, Jr. et al. Oct 2002 B1
6466404 Crue, Jr. Oct 2002 B1
6468436 Shi et al. Oct 2002 B1
6469877 Knapp et al. Oct 2002 B1
6477019 Matono et al. Nov 2002 B2
6479096 Shi et al. Nov 2002 B1
6483662 Thomas et al. Nov 2002 B1
6487040 Hsiao et al. Nov 2002 B1
6487056 Gibbons et al. Nov 2002 B1
6490125 Barr Dec 2002 B1
6496330 Crue, Jr. et al. Dec 2002 B1
6496334 Pang et al. Dec 2002 B1
6504676 Hiner et al. Jan 2003 B1
6512657 Heist et al. Jan 2003 B2
6512659 Hawwa et al. Jan 2003 B1
6512661 Louis Jan 2003 B1
6512690 Qi et al. Jan 2003 B1
6515573 Dong et al. Feb 2003 B1
6515791 Hawwa et al. Feb 2003 B1
6532823 Knapp et al. Mar 2003 B1
6535363 Hosomi et al. Mar 2003 B1
6552874 Chen et al. Apr 2003 B1
6552928 Qi et al. Apr 2003 B1
6577470 Rumpler Jun 2003 B1
6583961 Levi Jun 2003 B2
6583968 Scura et al. Jun 2003 B1
6597548 Yamanaka et al. Jul 2003 B1
6611398 Rumpler et al. Aug 2003 B1
6618223 Chen et al. Sep 2003 B1
6629357 Akoh Oct 2003 B1
6633464 Lai et al. Oct 2003 B2
6636394 Fukagawa et al. Oct 2003 B1
6639291 Sin et al. Oct 2003 B1
6650503 Chen et al. Nov 2003 B1
6650506 Risse Nov 2003 B1
6654195 Frank, Jr. et al. Nov 2003 B1
6657816 Barr et al. Dec 2003 B1
6661621 Iitsuka Dec 2003 B1
6661625 Sin et al. Dec 2003 B1
6674610 Thomas et al. Jan 2004 B1
6680863 Shi et al. Jan 2004 B1
6683763 Hiner et al. Jan 2004 B1
6687085 Minor et al. Feb 2004 B2
6687098 Huai Feb 2004 B1
6687178 Qi et al. Feb 2004 B1
6687977 Knapp et al. Feb 2004 B2
6691226 Frank, Jr. et al. Feb 2004 B1
6697294 Qi et al. Feb 2004 B1
6700738 Sin et al. Mar 2004 B1
6700759 Knapp et al. Mar 2004 B1
6704158 Hawwa et al. Mar 2004 B2
6707083 Hiner et al. Mar 2004 B1
6713801 Sin et al. Mar 2004 B1
6721138 Chen et al. Apr 2004 B1
6721149 Shi et al. Apr 2004 B1
6721203 Qi et al. Apr 2004 B1
6724569 Chen et al. Apr 2004 B1
6724572 Stoev et al. Apr 2004 B1
6729015 Matono et al. May 2004 B2
6735850 Gibbons et al. May 2004 B1
6737281 Dang et al. May 2004 B1
6744608 Sin et al. Jun 2004 B1
6747301 Hiner et al. Jun 2004 B1
6751055 Alfoqaha et al. Jun 2004 B1
6754049 Seagle et al. Jun 2004 B1
6756071 Shi et al. Jun 2004 B1
6757140 Hawwa Jun 2004 B1
6760196 Niu et al. Jul 2004 B1
6762910 Knapp et al. Jul 2004 B1
6765756 Hong et al. Jul 2004 B1
6775902 Huai et al. Aug 2004 B1
6778358 Jiang et al. Aug 2004 B1
6781927 Heanuc et al. Aug 2004 B1
6785955 Chen et al. Sep 2004 B1
6791793 Chen et al. Sep 2004 B1
6791807 Hikami et al. Sep 2004 B1
6798616 Seagle et al. Sep 2004 B1
6798625 Ueno et al. Sep 2004 B1
6801408 Chen et al. Oct 2004 B1
6801411 Lederman et al. Oct 2004 B1
6803615 Sin et al. Oct 2004 B1
6806035 Atireklapvarodom et al. Oct 2004 B1
6807030 Hawwa et al. Oct 2004 B1
6807332 Hawwa Oct 2004 B1
6809899 Chen et al. Oct 2004 B1
6816345 Knapp et al. Nov 2004 B1
6828897 Nepela Dec 2004 B1
6829160 Qi et al. Dec 2004 B1
6829819 Crue, Jr. et al. Dec 2004 B1
6833979 Knapp et al. Dec 2004 B1
6834010 Qi et al. Dec 2004 B1
6855240 Cooper Feb 2005 B2
6859343 Alfoqaha et al. Feb 2005 B1
6859997 Tong et al. Mar 2005 B1
6861937 Feng et al. Mar 2005 B1
6870712 Chen et al. Mar 2005 B2
6873494 Chen et al. Mar 2005 B2
6873547 Shi et al. Mar 2005 B1
6879464 Sun et al. Apr 2005 B2
6888184 Shi et al. May 2005 B1
6888704 Diao et al. May 2005 B1
6891702 Tang May 2005 B1
6894871 Alfoqaha et al. May 2005 B2
6894877 Crue, Jr. et al. May 2005 B1
6906894 Chen et al. Jun 2005 B2
6909578 Missell et al. Jun 2005 B1
6912106 Chen et al. Jun 2005 B1
6934113 Chen Aug 2005 B1
6934129 Zhang et al. Aug 2005 B1
6940688 Jiang et al. Sep 2005 B2
6942824 Li Sep 2005 B1
6943993 Chang et al. Sep 2005 B2
6944938 Crue, Jr. et al. Sep 2005 B1
6947258 Li Sep 2005 B1
6950266 McCaslin et al. Sep 2005 B1
6954332 Hong et al. Oct 2005 B1
6958885 Chen et al. Oct 2005 B1
6961221 Niu et al. Nov 2005 B1
6969989 Mei Nov 2005 B1
6975486 Chen et al. Dec 2005 B2
6987643 Seagle Jan 2006 B1
6989962 Dong et al. Jan 2006 B1
6989972 Stoev et al. Jan 2006 B1
7006327 Krounbi et al. Feb 2006 B2
7007372 Chen et al. Mar 2006 B1
7012832 Sin et al. Mar 2006 B1
7023658 Knapp et al. Apr 2006 B1
7026063 Ueno et al. Apr 2006 B2
7027268 Zhu et al. Apr 2006 B1
7027274 Sin et al. Apr 2006 B1
7035046 Young et al. Apr 2006 B1
7041985 Wang et al. May 2006 B1
7046490 Ueno et al. May 2006 B1
7054113 Seagle et al. May 2006 B1
7057857 Niu et al. Jun 2006 B1
7059868 Yan Jun 2006 B1
7092195 Liu et al. Aug 2006 B1
7110289 Sin et al. Sep 2006 B1
7111382 Knapp et al. Sep 2006 B1
7113366 Wang et al. Sep 2006 B1
7114241 Kubota et al. Oct 2006 B2
7116517 He et al. Oct 2006 B1
7122105 Filas Oct 2006 B1
7124654 Davies et al. Oct 2006 B1
7126788 Liu et al. Oct 2006 B1
7126790 Liu et al. Oct 2006 B1
7131346 Buttar et al. Nov 2006 B1
7133253 Seagle et al. Nov 2006 B1
7134185 Knapp et al. Nov 2006 B1
7154715 Yamanaka et al. Dec 2006 B2
7170725 Zhou et al. Jan 2007 B1
7177117 Jiang et al. Feb 2007 B1
7193815 Stoev et al. Mar 2007 B1
7196880 Anderson et al. Mar 2007 B1
7199974 Alfoqaha Apr 2007 B1
7199975 Pan Apr 2007 B1
7211339 Seagle et al. May 2007 B1
7212384 Stoev et al. May 2007 B1
7238292 He et al. Jul 2007 B1
7239478 Sin et al. Jul 2007 B1
7248431 Liu et al. Jul 2007 B1
7248433 Stoev et al. Jul 2007 B1
7248449 Seagle Jul 2007 B1
7280325 Pan Oct 2007 B1
7283327 Liu et al. Oct 2007 B1
7284316 Huai et al. Oct 2007 B1
7286329 Chen et al. Oct 2007 B1
7289303 Sin et al. Oct 2007 B1
7292409 Stoev et al. Nov 2007 B1
7296339 Yang et al. Nov 2007 B1
7307814 Seagle et al. Dec 2007 B1
7307818 Park et al. Dec 2007 B1
7310204 Stoev et al. Dec 2007 B1
7318947 Park et al. Jan 2008 B1
7333294 Li et al. Feb 2008 B1
7333295 Medina Feb 2008 B1
7337530 Stoev et al. Mar 2008 B1
7342752 Zhang et al. Mar 2008 B1
7349170 Rudman et al. Mar 2008 B1
7349179 He et al. Mar 2008 B1
7354664 Jiang et al. Apr 2008 B1
7363697 Dunn et al. Apr 2008 B1
7371152 Newman May 2008 B1
7372665 Stoev et al. May 2008 B1
7375926 Stoev et al. May 2008 B1
7379269 Krounbi et al. May 2008 B1
7386933 Krounbi et al. Jun 2008 B1
7389577 Shang et al. Jun 2008 B1
7392578 Sasaki et al. Jul 2008 B2
7417832 Erickson et al. Aug 2008 B1
7419891 Chen et al. Sep 2008 B1
7428124 Song et al. Sep 2008 B1
7430098 Song et al. Sep 2008 B1
7436620 Kang et al. Oct 2008 B1
7436638 Pan Oct 2008 B1
7440220 Kang et al. Oct 2008 B1
7443632 Stoev et al. Oct 2008 B1
7444740 Chung et al. Nov 2008 B1
7463449 Hirata et al. Dec 2008 B2
7493688 Wang et al. Feb 2009 B1
7508627 Zhang et al. Mar 2009 B1
7522377 Jiang et al. Apr 2009 B1
7522379 Krounbi et al. Apr 2009 B1
7522382 Pan Apr 2009 B1
7538988 Li et al. May 2009 B2
7542246 Song et al. Jun 2009 B1
7551406 Thomas et al. Jun 2009 B1
7552523 He et al. Jun 2009 B1
7554767 Hu et al. Jun 2009 B1
7576950 Matono Aug 2009 B2
7583466 Kermiche et al. Sep 2009 B2
7595967 Moon et al. Sep 2009 B1
7639457 Chen et al. Dec 2009 B1
7660080 Liu et al. Feb 2010 B1
7672080 Tang et al. Mar 2010 B1
7672086 Jiang Mar 2010 B1
7684160 Erickson et al. Mar 2010 B1
7688546 Bai et al. Mar 2010 B1
7691434 Zhang et al. Apr 2010 B1
7695761 Shen et al. Apr 2010 B1
7719795 Hu et al. May 2010 B2
7726009 Liu et al. Jun 2010 B1
7729086 Song et al. Jun 2010 B1
7729087 Stoev et al. Jun 2010 B1
7736823 Wang et al. Jun 2010 B1
7785666 Sun et al. Aug 2010 B1
7796356 Fowler et al. Sep 2010 B1
7800858 Bajikar Sep 2010 B1
7819979 Chen et al. Oct 2010 B1
7829264 Wang et al. Nov 2010 B1
7846643 Sun et al. Dec 2010 B1
7855854 Hu et al. Dec 2010 B2
7869160 Pan et al. Jan 2011 B1
7872824 MacChioni et al. Jan 2011 B1
7872833 Hu et al. Jan 2011 B2
7910267 Zeng et al. Mar 2011 B1
7911735 Sin et al. Mar 2011 B1
7911737 Jiang et al. Mar 2011 B1
7916426 Hu et al. Mar 2011 B2
7918013 Dunn et al. Apr 2011 B1
7921544 Sasaki et al. Apr 2011 B2
7950137 Bonhote May 2011 B2
7968219 Jiang et al. Jun 2011 B1
7982989 Shi et al. Jul 2011 B1
8008912 Shang Aug 2011 B1
8012804 Wang et al. Sep 2011 B1
8015692 Zhang et al. Sep 2011 B1
8018677 Chung et al. Sep 2011 B1
8018678 Zhang et al. Sep 2011 B1
8024748 Moravec et al. Sep 2011 B1
8072705 Wang et al. Dec 2011 B1
8074345 Anguelouch et al. Dec 2011 B1
8077418 Hu et al. Dec 2011 B1
8077434 Shen et al. Dec 2011 B1
8077435 Liu Dec 2011 B1
8077557 Hu Dec 2011 B1
8079135 Shen et al. Dec 2011 B1
8081403 Chen et al. Dec 2011 B1
8091210 Sasaki et al. Jan 2012 B1
8097846 Anguelouch et al. Jan 2012 B1
8104166 Zhang et al. Jan 2012 B1
8110085 Hsiao et al. Feb 2012 B2
8116043 Leng et al. Feb 2012 B2
8116171 Lee Feb 2012 B1
8125856 Li et al. Feb 2012 B1
8134794 Wang Mar 2012 B1
8136224 Sun et al. Mar 2012 B1
8136225 Zhang et al. Mar 2012 B1
8136805 Lee Mar 2012 B1
8141235 Zhang Mar 2012 B1
8146236 Luo et al. Apr 2012 B1
8149536 Yang et al. Apr 2012 B1
8151441 Rudy et al. Apr 2012 B1
8163185 Sun et al. Apr 2012 B1
8164760 Willis Apr 2012 B2
8164855 Gibbons et al. Apr 2012 B1
8164864 Kaiser et al. Apr 2012 B2
8165709 Rudy Apr 2012 B1
8166631 Tran et al. May 2012 B1
8166632 Zhang et al. May 2012 B1
8169473 Yu et al. May 2012 B1
8171618 Wang et al. May 2012 B1
8179636 Bai et al. May 2012 B1
8191237 Luo et al. Jun 2012 B1
8194365 Leng et al. Jun 2012 B1
8194366 Li et al. Jun 2012 B1
8196285 Zhang et al. Jun 2012 B1
8200054 Li et al. Jun 2012 B1
8203800 Li et al. Jun 2012 B2
8208350 Hu et al. Jun 2012 B1
8220140 Wang et al. Jul 2012 B1
8222599 Chien Jul 2012 B1
8225488 Zhang et al. Jul 2012 B1
8227023 Liu et al. Jul 2012 B1
8228633 Tran et al. Jul 2012 B1
8231796 Li et al. Jul 2012 B1
8233248 Li et al. Jul 2012 B1
8248896 Yuan et al. Aug 2012 B1
8254060 Shi et al. Aug 2012 B1
8257597 Guan et al. Sep 2012 B1
8259410 Bai et al. Sep 2012 B1
8259539 Hu et al. Sep 2012 B1
8262918 Li et al. Sep 2012 B1
8262919 Luo et al. Sep 2012 B1
8264797 Emley Sep 2012 B2
8264798 Guan et al. Sep 2012 B1
8270126 Roy et al. Sep 2012 B1
8273233 Chen et al. Sep 2012 B2
8276258 Tran et al. Oct 2012 B1
8277669 Chen et al. Oct 2012 B1
8279719 Hu et al. Oct 2012 B1
8284517 Sun et al. Oct 2012 B1
8288204 Wang et al. Oct 2012 B1
8289821 Huber Oct 2012 B1
8291743 Shi et al. Oct 2012 B1
8307539 Rudy et al. Nov 2012 B1
8307540 Tran et al. Nov 2012 B1
8308921 Hiner et al. Nov 2012 B1
8310785 Zhang et al. Nov 2012 B1
8310901 Batra et al. Nov 2012 B1
8315019 Mao et al. Nov 2012 B1
8316527 Hong et al. Nov 2012 B2
8320076 Shen et al. Nov 2012 B1
8320077 Tang et al. Nov 2012 B1
8320219 Wolf et al. Nov 2012 B1
8320220 Yuan et al. Nov 2012 B1
8320722 Yuan et al. Nov 2012 B1
8322022 Yi et al. Dec 2012 B1
8322023 Zeng et al. Dec 2012 B1
8325569 Shi et al. Dec 2012 B1
8329320 Zhang et al. Dec 2012 B2
8333008 Sin et al. Dec 2012 B1
8334093 Zhang et al. Dec 2012 B2
8336194 Yuan et al. Dec 2012 B2
8339738 Tran et al. Dec 2012 B1
8341826 Jiang et al. Jan 2013 B1
8343319 Li et al. Jan 2013 B1
8343364 Gao et al. Jan 2013 B1
8349195 Si et al. Jan 2013 B1
8351307 Wolf et al. Jan 2013 B1
8357244 Zhao et al. Jan 2013 B1
8373945 Luo et al. Feb 2013 B1
8375564 Luo et al. Feb 2013 B1
8375565 Hu et al. Feb 2013 B2
8381391 Park et al. Feb 2013 B2
8385157 Champion et al. Feb 2013 B1
8385158 Hu et al. Feb 2013 B1
8394280 Wan et al. Mar 2013 B1
8400731 Li et al. Mar 2013 B1
8404128 Zhang et al. Mar 2013 B1
8404129 Luo et al. Mar 2013 B1
8405930 Li et al. Mar 2013 B1
8409453 Jiang et al. Apr 2013 B1
8413317 Wan et al. Apr 2013 B1
8416540 Li et al. Apr 2013 B1
8419953 Su et al. Apr 2013 B1
8419954 Chen et al. Apr 2013 B1
8422176 Leng et al. Apr 2013 B1
8422342 Lee Apr 2013 B1
8422841 Shi et al. Apr 2013 B1
8424192 Yang et al. Apr 2013 B1
8441756 Sun et al. May 2013 B1
8443510 Shi et al. May 2013 B1
8444866 Guan et al. May 2013 B1
8449948 Medina et al. May 2013 B2
8451556 Wang et al. May 2013 B1
8451563 Zhang et al. May 2013 B1
8454846 Zhou et al. Jun 2013 B1
8455119 Jiang et al. Jun 2013 B1
8456961 Wang et al. Jun 2013 B1
8456963 Hu et al. Jun 2013 B1
8456964 Yuan et al. Jun 2013 B1
8456966 Shi et al. Jun 2013 B1
8456967 Mallary Jun 2013 B1
8458892 Si et al. Jun 2013 B2
8462592 Wolf et al. Jun 2013 B1
8468682 Zhang Jun 2013 B1
8472288 Wolf et al. Jun 2013 B1
8480911 Osugi et al. Jul 2013 B1
8486285 Zhou et al. Jul 2013 B2
8486286 Gao et al. Jul 2013 B1
8488272 Tran et al. Jul 2013 B1
8491801 Tanner et al. Jul 2013 B1
8491802 Gao et al. Jul 2013 B1
8493693 Zheng et al. Jul 2013 B1
8493695 Kaiser et al. Jul 2013 B1
8495813 Hu et al. Jul 2013 B1
8498084 Leng et al. Jul 2013 B1
8506828 Osugi et al. Aug 2013 B1
8514517 Batra et al. Aug 2013 B1
8518279 Wang et al. Aug 2013 B1
8518832 Yang et al. Aug 2013 B1
8520336 Liu et al. Aug 2013 B1
8520337 Liu et al. Aug 2013 B1
8524068 Medina et al. Sep 2013 B2
8526275 Yuan et al. Sep 2013 B1
8531801 Xiao et al. Sep 2013 B1
8532450 Wang et al. Sep 2013 B1
8533937 Wang et al. Sep 2013 B1
8537494 Pan et al. Sep 2013 B1
8537495 Luo et al. Sep 2013 B1
8537502 Park et al. Sep 2013 B1
8545999 Leng et al. Oct 2013 B1
8547659 Bai et al. Oct 2013 B1
8547667 Roy et al. Oct 2013 B1
8547730 Shen et al. Oct 2013 B1
8555486 Medina et al. Oct 2013 B1
8559141 Pakala et al. Oct 2013 B1
8563146 Zhang et al. Oct 2013 B1
8565049 Tanner et al. Oct 2013 B1
8568909 Li et al. Oct 2013 B2
8576517 Tran et al. Nov 2013 B1
8578594 Jiang et al. Nov 2013 B2
8582238 Liu et al. Nov 2013 B1
8582241 Yu et al. Nov 2013 B1
8582253 Zheng et al. Nov 2013 B1
8588039 Shi et al. Nov 2013 B1
8593914 Wang et al. Nov 2013 B2
8597528 Roy et al. Dec 2013 B1
8599520 Liu et al. Dec 2013 B1
8599657 Lee Dec 2013 B1
8603593 Roy et al. Dec 2013 B1
8607438 Gao et al. Dec 2013 B1
8607439 Wang et al. Dec 2013 B1
8611035 Bajikar et al. Dec 2013 B1
8611054 Shang et al. Dec 2013 B1
8611055 Pakala et al. Dec 2013 B1
8614864 Hong et al. Dec 2013 B1
8619512 Yuan et al. Dec 2013 B1
8625233 Ji et al. Jan 2014 B1
8625941 Shi et al. Jan 2014 B1
8628672 Si et al. Jan 2014 B1
8630068 Mauri et al. Jan 2014 B1
8634280 Wang et al. Jan 2014 B1
8638529 Leng et al. Jan 2014 B1
8643980 Fowler et al. Feb 2014 B1
8649123 Zhang et al. Feb 2014 B1
8665561 Knutson et al. Mar 2014 B1
8670211 Sun et al. Mar 2014 B1
8670213 Zeng et al. Mar 2014 B1
8670214 Knutson et al. Mar 2014 B1
8670294 Shi et al. Mar 2014 B1
8670295 Hu et al. Mar 2014 B1
8675318 Ho et al. Mar 2014 B1
8675455 Krichevsky et al. Mar 2014 B1
8681594 Shi et al. Mar 2014 B1
8689430 Chen et al. Apr 2014 B1
8693141 Elliott et al. Apr 2014 B1
8703397 Zeng et al. Apr 2014 B1
8705205 Li et al. Apr 2014 B1
8711518 Zeng et al. Apr 2014 B1
8711528 Xiao et al. Apr 2014 B1
8717709 Shi et al. May 2014 B1
8720044 Tran et al. May 2014 B1
8721902 Wang et al. May 2014 B1
8724259 Liu et al. May 2014 B1
8749790 Tanner et al. Jun 2014 B1
8749920 Knutson et al. Jun 2014 B1
8753903 Tanner et al. Jun 2014 B1
8760807 Zhang et al. Jun 2014 B1
8760818 Diao et al. Jun 2014 B1
8760819 Liu et al. Jun 2014 B1
8760822 Li et al. Jun 2014 B1
8760823 Chen et al. Jun 2014 B1
8763235 Wang et al. Jul 2014 B1
8780498 Jiang et al. Jul 2014 B1
8780505 Xiao Jul 2014 B1
8786983 Liu et al. Jul 2014 B1
8790524 Luo et al. Jul 2014 B1
8790527 Luo et al. Jul 2014 B1
8792208 Liu et al. Jul 2014 B1
8792312 Wang et al. Jul 2014 B1
8793866 Zhang et al. Aug 2014 B1
8797680 Luo et al. Aug 2014 B1
8797684 Tran et al. Aug 2014 B1
8797686 Bai et al. Aug 2014 B1
8797692 Guo et al. Aug 2014 B1
8813324 Emley et al. Aug 2014 B2
20030017362 Minor et al. Jan 2003 A1
20070211379 Kato et al. Sep 2007 A1
20080107922 Ikeda et al. May 2008 A1
20080239582 Kanaya Oct 2008 A1
20090002650 Nomoto Jan 2009 A1
20090073608 Ookawa et al. Mar 2009 A1
20100290157 Zhang et al. Nov 2010 A1
20110086240 Xiang et al. Apr 2011 A1
20120111826 Chen et al. May 2012 A1
20120216378 Emley et al. Aug 2012 A1
20120237878 Zeng et al. Sep 2012 A1
20120298621 Gao Nov 2012 A1
20130216702 Kaiser et al. Aug 2013 A1
20130216863 Li et al. Aug 2013 A1
20130229728 Brinkman et al. Sep 2013 A1
20130257421 Shang et al. Oct 2013 A1
20140154529 Yang et al. Jun 2014 A1
20140175050 Zhang et al. Jun 2014 A1
Non-Patent Literature Citations (4)
Entry
“Electroplating—How It Works” accessed on Aug. 11, 2017 from https://www.finishing.com/faqs/howworks.shtml.
“Electroplating” by K. Osborne accessed on Aug. 11, 2017 from https://nzic.org.nz/ChemProcesses/metals/8G.pdf.
“Electroplating” accessed on Aug. 11, 2017 from https://en.wikipedia.org/wiki/Electroplating.
Ming Sun, et al., U.S. Appl. No. 13/423,009, filed Mar. 16, 2012, 25 pages.
Provisional Applications (1)
Number Date Country
61949390 Mar 2014 US