Micro-switching device actuated by low voltage

Information

  • Patent Grant
  • 6700465
  • Patent Number
    6,700,465
  • Date Filed
    Friday, July 26, 2002
    22 years ago
  • Date Issued
    Tuesday, March 2, 2004
    20 years ago
Abstract
A micro-switching device actuated by a low voltage is provided. The micro-switching device includes a spring operating elastically; a membrane formed on one side of the spring, being held by the spring; and a lower electrode formed below the membrane, for generating an electrostatic attraction when a voltage is applied thereto, wherein the membrane is non-planar. This micro-switching device is advantageous in that it can be actuated by a low voltage and prevents the adhesion that occurs commonly in micro devices.
Description




Priority is claimed to Patent Application No. 2001-73574 filed in Republic of Korea on Nov. 24, 2001, herein incorporated by reference.




BACKGROUND OF THE INVENTION




1. Field of the Invention




The present invention relates to a micro-switching device actuated by low voltage, using an electrostatic attraction.




2. Description of the Related Art




In general, an RF switch is a kind of switch for turning a device on or off by using electrostatic attraction to bring a structure into contact with a signal line. In this case, a predetermined voltage is applied to the signal line so as to generate an electrostatic attraction required. Here, the voltage required is determined by the rigidity of a spring supporting a microstructure. Preferably, the spring has low rigidity so as to allow actuation by a low voltage.




When a microstructure constituting a micro device is in contact with a signal line or an electrode, they may, however, be adhered to each other. This problem may also occur when a voltage is applied to and then removed from an electrode. As a result, the microstructure is kept in contact with the signal line, thereby preventing the proper switching control of the micro device.




To solve this problem, the restoring capability of an actuated structure must be strengthened, to make the actuated structure return back to its original position. Thus, the structure has to be supported by a spring of high rigidity. However, as described above, the voltage applied to an electrode must be increased in order to use a spring of high rigidity. Nevertheless, a spring of high rigidity is often adopted in a micro switching device at the present time, so as to prevent the adhesion of a micro device to a signal line or an electrode. As a result, the necessary voltage is increased, and thus it is very difficult to make a micro switching device that can be actuated by a low voltage.





FIG. 1A

is a perspective view of a conventional micro-switching device. The micro-switching device is supported by anchors


13


, which are fixed onto a substrate, and springs


14


which are formed on the anchors


13


, and includes a membrane


15


above the substrate, a lower electrode


11


corresponding to the membrane


15


, and insulating layers


12


. If a voltage is applied to the lower electrode


11


, an electrostatic attraction is generated to actuate the springs


14


. Then, the membrane


15


approaches the lower electrode


11


due to the electrostatic attraction, comes into contact with a signal line


16


, and is then switched on.





FIGS. 1B and 1C

are views for explaining defects of a conventional micro-switching device. Here, for convenience's sake, the defects are diagrammatically viewed with regard to a general representation of a conventional micro-switching device.

FIG. 1B

is a view of a micro-switching device in which a membrane


15


is actuated by applying power to a lower electrode


11


, and

FIG. 1C

is a view of the micro-switching device in which the membrane


15


is actuated and approaches closely to the lower electrode


11


. More specifically, while the membrane


15


is not in contact with the lower structure of the lower electrode


11


and insulating layers


12


, with its body held by the springs


14


, an electrostatic attraction is generated between the membrane


15


and the lower electrode


11


when a voltage is applied to the lower electrode


11


, thereby attracting the membrane


15


to the lower electrode


11


. At this time, the more closely the membrane


15


approaches the lower electrode


11


, the more the electrostatic attraction between the membrane


15


and the lower electrode


11


is increased. As a result, the displacement of the membrane


15


increases. Then, the displacement of the springs


14


increases to increase their restoring capability.




Here, the electrostatic attraction between the membrane


15


and the lower electrode


11


is calculated by the following equation:










F
E

=


1
2




ε






AV
2




(


g
0

-

U
z


)

2







(
1
)













wherein F


E


denotes an electrostatic attraction, A denotes a corresponding area, V denotes voltage applied to the lower electrode


11


, U


z


denotes the driving distance of the membrane


15


, and g


0


denotes a distance between the membrane


15


and the lower electrode


11


. As shown in the equation (1), an increase in the driving distance U


z


of the membrane


15


results in an increase in the electrostatic attraction F


E


.




The restorability capability of the springs


14


can be expressed by the following equation:







F




s




=kU




z


  (2)




wherein Fs denotes the restoring capability of the springs


14


, k denotes a spring constant, and Uz denotes the displacement of the membrane


15


. From the equation 2, it is noted that the restoring capability Fs of the springs


14


increases linearly according to the displacement of the membrane


15


.





FIG. 2

is a graph illustrating the relationship between the restoring capability of the springs


14


and the electrostatic attraction due to the displacement of the membrane


15


. This graph reveals that the electrostatic attraction changes greatly, and the restoring capability of the springs


14


changes linearly, according to the driving distance of the membrane


15


. The electrostatic attraction may be greater than or less than the restoring capability of the springs


14


according to the displacement of the membrane


15


. This is caused by the use of a spring having a relatively large spring constant, or a low voltage applied to the lower electrode


11


. Then, the driving distance of the membrane


15


is limited, i.e., it is actuated to a predetermined point and does not operate, and thus cannot function as a switch. However, referring to

FIG. 2

, the electrostatic attraction is always greater than the restoring capability of the springs


14


, at which time the membrane


15


becomes in contact with the lower structure of the lower electrode


11


, the insulating layer


12


, and the signal line


16


, due to the electrostatic attraction. At this time, the membrane can function as a switch.




Once a voltage is applied to the lower electrode


11


, the membrane


15


comes into contact with the signal line


16


, i.e. it is switched on, and thus the electrostatic attraction is far greater than the restoring capability of the springs


14


. Then, the voltage is removed to make the membrane


15


switch off. However, adhesion, which is an inherent property of a micro device, may occur between the membrane


15


and the lower structure of the lower electrode


11


, the insulating layer


12


and the signal line


16


, thereby reducing the restoring capability of the springs


14


. To prevent a reduction in the restoring capability of the springs


14


, a spring having a large spring constant K may be used, but this is disadvantageous because a high voltage must be applied to the lower electrode


11


.




The above problem can be solved by applying a predetermined force to the micro-switching device so that the membrane can return back to its original position without using a spring of high rigidity. That is, a spring of low rigidity is used, and means for applying a predetermined force onto the micro-switching device is additionally installed to separate the membrane from a lower structure.




For instance, electrodes for applying a driving force may be installed at the top as well as the bottom of the membrane. To actuate a microstructure and make it return back to its original position, a voltage is applied to the upper and lower electrodes of a microstructure. Then, the membrane may be driven in both directions, i.e. upward and downward, and thus can be easily separated from the electrodes to return to its original state. However, this method is disadvantageous in that the manufacturing process is complicated, thereby reducing the yield. Also, in fact, it is difficult to obtain sufficient restoring force to actuate the microstructure and return it to its original state with a low voltage.




SUMMARY OF THE INVENTION




To solve the above problems, it is an object of the present invention to provide a micro-switching device that can be actuated by a low voltage, easily deforms with a electrostatic attraction, and prevents the adhesion between elements while using a spring of low rigidity.




To achieve the object, there is provided a micro-switching device, including a spring operating elastically; a membrane formed on one side of the spring, being held by the spring; and a lower electrode formed below the membrane, for generating an electrostatic attraction when a voltage is applied thereto, wherein the membrane is non-planar.




Preferably, the spring is formed on an anchor which is formed on a substrate, and the membrane is actuated not to be in contact with the substrate while being held by the spring.




Preferably, the micro-switching device further includes a means for applying voltage to the membrane and the lower electrode.




Preferably, the lower surface of the membrane has a concave portion or protrusion, and the membrane is cut partially spherical.











BRIEF DESCRIPTION OF THE DRAWINGS




The above object and advantages of the present invention will become more apparent by describing in detail a preferred embodiment thereof with reference to the attached drawings in which:





FIG. 1A

is a perspective view of a conventional micro-switching device;





FIGS. 1B and 1C

are views explaining the operational principles of the conventional micro-switching device of

FIG. 1A

;





FIG. 2

is a graph illustrating the relationship between an electrostatic attraction and the restoring capability of the spring of

FIG. 1A

with regard to the driving distance of the membrane of

FIG. 1A

;





FIGS. 3A through 3C

are views explaining a micro-switching device actuated by a low voltage, according to the present invention;





FIG. 4

is a graph illustrating the relationship between an electrostatic attraction and the restoring capability of a spring with regard to the driving distance of a membrane of a micro-switching device, according to the present invention; and





FIGS. 5A through 5C

are views of a micro-switching device actuated by a low voltage, according to a preferred embodiment of the present invention.











DETAILED DESCRIPTION OF THE INVENTION




Hereinafter, the structure and operational principles of a micro-switching device actuated by a low voltage, according to a preferred embodiment of the present invention, will be described with reference to

FIGS. 3A through 3C

. The micro-switching device according to the present invention is different from the conventional micro-switching device illustrated in

FIGS. 1A through 1C

in that the lower surface of a membrane


35


is concave or convex, not planar.




For convenience's sake, a micro switching device having the membrane


35


of predetermined curvature is illustrated conceptually in

FIGS. 3A through 3C

. More specifically,

FIG. 3A

shows when the membrane


35


approaches a lower electrode


31


but has yet to contact the lower electrode


31


, when voltage is applied to the lower electrode


31


. At this time, the shape of the membrane


35


does not transform and still has predetermined curvature.




As shown in

FIG. 3B

, an increase in the displacement of the membrane


35


results in an increase in the electrostatic attraction. Thus in the event that the displacement of the membrane


35


increases, it comes into contact with a lower structure of a lower electrode


31


and an insulating layer


32


, below the membrane


35


. In detail, if the displacement of the membrane


35


increases, its lower surface comes into contact with the lower structure and then deforms due to a strong electrostatic attraction between the membrane


35


and the lower structure. In general, a micro-sized membrane is an elastic material, and thus it deforms under a predetermined force. Therefore, due to the electrostatic attraction, the protruding edges of the lower surface of membrane


35


which protrude lower than the rest of the membrane


35


make first contact the lower structure of the lower electrode


31


and insulating layer


32


. As a result, the lower surface of the membrane


35


, in contact with the lower structure, is semi-spherical as shown in FIG.


3


B. Then, as shown in

FIG. 3C

, the membrane


35


deforms due to the strong electrostatic attraction, bringing its whole lower surface including the concave portion closely into contact with the lower structure


31


and


32


.




Here, since the membrane


35


is formed of a material of high rigidity, a strong electrostatic attraction is required to bring the lower surface of the membrane


35


into contact with the lower structure


31


and


32


. Referring to

FIG. 3B

, when the membrane


35


approaches very close to the lower electrode


31


, the electrostatic attraction increases greatly. When the membrane


35


is in contact with the lower structure, the micro-switching device is switched on. When a voltage is removed from the lower electrode


31


so as to switch off the micro switching device, the membrane


35


is separated from the lower structure


31


and


32


by the elastic restoring force due to the deformation of the membrane


35


, in addition to the restoring capabilities of an anchor


33


and a spring


34


.




In the conventional micro-switching device, the restoring capability of the spring increases linearly with the driving distance of the membrane, whereas in the micro-switching device according to the present invention, the membrane


35


is separated from the lower structure by the deformation of the membranes


35


as well as the restoring capability of the spring


34


. Accordingly, the overall restoring capability of the micro-switching device according to the present invention increases nonlinearly with the driving distance Uz of the membrane


35


, as illustrated in FIG.


4


. More specifically, as can be seen from

FIG. 4

, an electrostatic attraction (?) and the restoring capability of the micro-switching device according to the present invention increase linearly with the driving distance Uz, if the driving distance Uz is short, i.e., in an “A” region, as in the conventional micro-switching device (see FIG.


2


). However, the restoring capability of the micro-switching device according to the present invention increases nonlinearly with the driving distance Uz in a “B” region in which the membrane


35


is in contact with the lower electrode


31


, because the deformation of the membrane


35


augments the restoring capability of the spring


34


, unlike in a conventional micro-switching device.




Meanwhile, the restoring capability of the micro-switching device is dependent largely on the shape of the membrane. Thus the shape of the membrane is very important in a micro-switching device. Preferably, a micro-switching device actuated by a low voltage includes a spherical membrane having a predetermined curvature. If the lower surface of the membrane is spherical, the circumference of the lower surface of the round membrane comes into contact first with the lower electrode or a signal line. At this time, the lower surface between the edges of the round membrane


35


approach more closely to the lower electrode than the lower surfaces of other membranes having different shapes. Therefore, a relatively high electrostatic attraction is formed between the lower surface of the membrane


35


and the lower electrode


31


, so that a large deformation of the membrane


35


can be obtained even though a micro-switching device is actuated by a low voltage.




On the other hand, if the membrane is not round, for instance, it is rectangular, the distance between its lower surface and the lower electrode is greater than that between of the round membrane, when the edges of the lower surface of the membrane are in contact with the lower electrode. Therefore, a relatively high voltage is required to make the concave portion of the membrane contact the lower electrode.





FIGS. 5A through 5C

are views of a micro-switching device actuated by a low voltage, according to a preferred embodiment of the present invention. Referring to

FIG. 5A

, lower electrodes


52


are formed on a substrate


51


to drive a membrane


55


. Also, anchors


53


are formed on the substrate


51


to fix springs


54


for supporting the membrane


55


to the substrate


51


. The membrane


55


is positioned above the lower electrodes


52


, held by the springs


54


fixed to the anchors


53


. Below the membrane


55


are formed signal lines


56


in addition to the lower electrodes


52


. Here, the membrane


55


is a non-planar type and has predetermined curvature. When a voltage is applied to the lower electrodes


52


, the membrane


55


moves toward the lower electrodes


52


due to an electrostatic attraction between the membrane


55


and the lower electrodes


52


, and then contacts signal lines


56


. As a result, the two separated signal lines


56


are electrically connected to each other, and the micro-switching device is switched on.





FIG. 5B

is a view of a quarter of a micro-switching device having a rectangular membrane


55


whose lower circumferences protrude downward and whose center bulges up.

FIG. 5C

is a view of a micro-switching device having a spherical membrane


55


whose center bulges up, that is, the inner side of its lower surface is formed to have a predetermined curvature. Referring to

FIGS. 5B and 5C

, C and C′ denote points of the membranes


55


which are positioned the closest to a substrate


51


, and D and D′ denote the centers of the membranes


55


, which are positioned the farthest from the substrate


51


. It is understood that the closer the points C and C′ are to the points D and D′ on the membranes


55


, the more the distances between the membranes


55


and the substrates


51


is increased. For this reason, the shape of the membrane according to the present invention is very important. The voltages required to actuate the micro-switching devices of

FIGS. 5B and 5C

are different from each other, even though the sizes of the lower surfaces of the membranes


55


, the spring constants of the springs


54


, and stress grade values of the membranes


55


are set to be the same. For instance, a voltage of 10.3 V is required to actuate the rectangular membrane


55


of

FIG. 5B

, whereas a voltage of 3 V is sufficient to actuate the spherical membrane of FIG.


5


C. That is, the driving voltage required by the spherical membrane of

FIG. 5C

is reduced to 30% of that required by the rectangular membrane of FIG.


5


B.




In conclusion, the restoring capabilities of both the micro-switching devices of FIG.


5


B and

FIG. 5C

are both better than those of a conventional micro-switching device having a planar membrane. However, since the micro-switching device of

FIG. 5C

having a spherical membrane has a predetermined inner curvature, it can be actuated by a lower voltage than the micro-switching device of

FIG. 5B

having a rectangular membrane. This is because the difference in height between the points C′ and D′ of the round membrane of

FIG. 5C

is less than that between the points C and D of the rectangular membrane of

FIG. 5B

having the same curvature and size. For this reason, a stronger electrostatic attraction operates on the round membrane of

FIG. 5C

than on the rectangular membrane of

FIG. 5B

, when a voltage is applied to the lower electrode. Also, the round membrane of

FIG. 5C

has greater geometric rigidity than the rectangular membrane of

FIG. 5B

, and thus has better restoring capability.




A micro-switching device according to the present invention is characterized in that the lower surface of its membrane is curved rather than planar. However, the shape of the membrane is not restricted. That is, the membrane may be formed to have the circumference of the lower surface protruding, or the center of the lower surface protruding. To guide the inner curvature of the membrane, a sacrificial layer may be formed generally on the membrane and the lower structure such as a lower electrode or a signal line, to have an inclination with regard to the circumference of the membrane, when manufacturing the micro switching device.




While the present invention has been particularly shown and described with reference to a preferred embodiment thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope thereof as defined by the appended claims.




As described above, a micro-switching device according to the present invention can be actuated by a low voltage, preventing the adhesion which commonly occurs in micro devices. According to the present invention, it is possible to fabricate a micro-switching device which can be actuated by a low voltage, and the concepts of the present invention can be easily applied to various micro devices by forming a concave portion or a protrusion on the lower surface of a membrane corresponding to a lower electrode.



Claims
  • 1. A micro-switching device actuated by a low voltage, comprising:a spring operating elastically; a membrane formed on one side of the spring, being held by the spring; and a lower electrode formed below the membrane, for generating an electrostatic attraction when a voltage is applied thereto, wherein the membrane is non-planar.
  • 2. The micro-switching device of claim 1, wherein the spring is formed on an anchor which is formed on a substrate.
  • 3. The micro-switching device of claim 2, wherein the membrane is actuated not to be in contact with the substrate while being held by the spring.
  • 4. The micro-switching device of claim 3 further comprising a signal line formed on the substrate and being in contact with the membrane when the membrane is actuated.
  • 5. The micro-switching device of claim 1, wherein the lower surface of the membrane is formed such that its circumference has a lower curvature than its center.
  • 6. The micro-switching device of claim 5, wherein the membrane is cut partially spherical.
  • 7. The micro-switching device of claim 1, wherein the lower surface of the membrane is formed such that its circumference has a higher curvature than its center.
  • 8. The micro-switching device of claim 6, wherein the membrane is cut partially spherical.
Priority Claims (1)
Number Date Country Kind
2001-73574 Nov 2001 KR
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