Claims
- 1. A microchannel plate-in-wall structure comprising:
- a microchannel plate consisting of semiconducting glass, having anode and cathode surfaces and a plurality of electron multiplier channels therebetween;
- at least one continuous thin planar electrode deposited on each of said surfaces, said electrode extending substantially to the edge of said plate as well as adjacent to and surrounding one end of at least one of said channels; and
- a first hollow generally cylindrical glass wall section axially positioned normal to one of said surfaces and sealed with glass directly to said electrode and plate, said wall section at said surface having a minimum cross-section which encloses all of the ends of said channels at said one surface, and a maximum cross-section smaller than said one surface, whereby said one plate surface and each said one thin planar electrode it supports is divided into a pair of exposed portions which lie on opposite sides of said wall interconnected by a third portion sealed between said wall and said plate.
- 2. A microchannel plate-in-wall structure according to claim 1 wherein said wall comprises:
- a lead oxide glass reduced by heating in a hydrogen atmosphere.
- 3. A microchannel plate-in-wall structure according to claim 1 wherein:
- said wall is sealed to said one surface with a glass frit which has been melted and devitrified.
- 4. A microchannel plate-in-wall structure according to claim 3 wherein:
- said frit is Corning Sealing Glass Code 7575.
- 5. A microchannel plate-in-wall structure according to claim 1 wherein:
- said anode and cathode surfaces each support a plurality of strip electrodes, each electrode on one broad surface surrounding the ends of channels which lie in one of a plurality of rows and each electrode on the remaining broad surfaces surrounding the ends of channels which lie in one of a plurality of columns substantially perpendicular to said rows.
- 6. A microchannel plate-in-wall structure according to claim 1 wherein:
- said microchannel plate is coated with a layer of SiO.sub.x having a thickness of 200 angstroms at least over the area where said wall intersects said one surface.
- 7. A microchannel plate-in-wall structure according to claim 6 wherein:
- the value of "x" is substantially unity.
- 8. A microchannel plate-in-wall structure according to claim 1 wherein:
- a second hollow wall section is sealed to the opposite broad surface of said microchannel plate in the same relationship thereto as said first wall section.
- 9. A microchannel plate-in-wall structure according to claim 5 wherein:
- a second hollow wall section is sealed to the opposite broad surface of said microchannel plate in the same relationship thereto as said first wall section.
Government Interests
The invention described herein may be manufactured, used and licensed by the U.S. Government for governmental purposes without the payment of any royalties thereon.
US Referenced Citations (11)