Microelectrical Device With Space Charge Effect

Abstract

A microelectrical device comprising two generally parallel electrodes (20,21) at least one of which is movable, and at least one of the electrodes comprising a layer of a semiconductor presenting space charge characteristics. The electrodes have a closed position an open position. A spring effect biases the movable electrode (21) towards the open position. When the movable electrode (21) is closed by a first voltage pulse (P1) a sufficiently high space charge density (10) is generated to hold the movable electrode (21) closed. When zero voltage is applied the movable electrode (21) is held closed by the built in space charge until the application of a second voltage pulse (P2) which decreases the space charge in the semiconductor (10) to allow the movable electrode(s) to be moved to the open position by the spring effect.

Description

BRIEF DESCRIPTION OF DRAWINGS

The invention will be further described by way of example with reference to the accompanying drawings in which:

FIG. 1 is a schematic representation of a device according to the invention in its open position;

FIG. 2 is a diagram illustrating the application of voltage pulses to a device according to the invention, with an indication of the corresponding position of the device;

FIG. 3 is a schematic diagram illustrating the structure of a device according to the invention produced by integrated silicon technology;

FIGS. 4 a to 4e schematically illustrate steps of a process for the manufacture of a device like that of FIG. 3;

FIG. 4 f is a top plan view of the finished device; and

FIG. 5 is a schematic representation of a device according to the invention which has an arrangement to maintain the semiconductor surfaces in depletion mode whatever be the applied voltage.

Claims

1. A microelectrical device comprising two generally parallel electrodes -at least one of which is movable, and at least one of the electrodes comprising a layer of a semiconductor material, the electrodes having a closed position in which they are together and an open position in which the electrodes are spaced by a gap, and means for biasing the movable electrode(s) towards the open position, the electrodes being connectable to a voltage source for applying: a first voltage pulse to move the movable electrode(s) from the open to the closed position against the action of the biasing means,a low or zero voltage, anda second voltage pulse of opposite polarity to the first voltage pulse;such that when the or each movable electrode is moved to the closed position by the application of a first voltage pulse a space charge is generated in the semiconductor to hold the electrodes in contact, and when said low or zero voltage is applied the or each movable electrode is held in the closed position by the space charge until the application of the second voltage pulse which decreases the space charge to allow the movable electrode(s) to be moved to the open position by the action of the biasing means.

2. The microelectrical device of claim 1 wherein one electrode comprises a layer of a p (or n) type semiconductor and the other electrode comprises a layer of an n (or p) type semiconductor or of a metal.

3. The microelectrical device of claim 1 wherein the electrodes are integrated from a semiconductor wafer having a generally planar surface, and the electrodes are parallel to or perpendicular to said planar surface of the wafer.

4. The microelectrical device of claim 1 comprising at least one semiconductor layer covered by an outer insulating layer.

5. The microelectrical device of claim 1 further comprising means to maintain surfaces of the semiconductor layers in depletion mode whatever be the applied potential.

6. The microelectrical device of claim 5 wherein the means to maintain the semiconductor surfaces in depletion mode include a p-type diffusion area in a main n-type semiconductor layer of the electrode, or an n-type diffusion area in a main p-type semiconductor layer of the electrode, or both, and the or each diffusion area is associated with means for applying a biasing potential to maintain the surface of the main semiconductor layer in depletion mode.

7. The microelectric device of claim 1 comprising at least one semiconductor layer of p or n doped silicon with a doping density in the range from 1.1015 cm−3 to 1.1021 cm−3.

8. The microelectrical device of claim 1 which is a capacitor.

9. The microelectrical device of claim 8 which is an RF capacitor.

10. The microelectrical device of claim 1 which is a switch.

11. The microelectrical device of claim 10 which is a bistable switch that remains open or closed as long as no voltage pulse is applied.

12. The microelectrical device of claim 10 which is an RF switch.

13. The microelectrical device of claim 1, which is a position actuator for optical micromirrors or shutters.

14. The micromechanical device of claim 1 which is a micro-relay that actuates another contact for passing a signal current.

15. The micromechanical device of claim 1 comprising a movable electrode made as a resilient flexible membrane that is biased towards the open position by the resiliency of the membrane.

16. The micromechanical device of claim 1 which is incorporated in a deformable mirror, a deformable grating, a display comprising bistable pixels formed by the device, an array of varicaps, or a threshold-based pressure sensor.