This invention relates to mass spectrometry, and in particular to the use of mass spectrometry in conjunction with liquid chromatography or capillary electrophoresis with an electrospray ionization source. The invention more particularly relates to a microengineered interface for use in a mass spectrometry system.
Identification of a chemical substance is often carried out using a combination of separation and analysis. Separation of a liquid analyte into its different components is commonly carried out using liquid chromatography (LC) or capillary electrophoresis (CE). To minimise ion fragmentation, analysis is carried out by first ionizing the liquid at atmospheric pressure using an electrospray ionization (ESI) source. However, analysis typically takes place under vacuum, using a mass spectrometer (MS). The ions, which normally comprise a small fraction of an entraining gas flow, must therefore be coupled between regions at atmospheric pressure and at low pressure. Coupling between the two pressure regimes is carried out in an intermediate pressure chamber known as a vacuum interface.
Efficient vacuum interfaces subject the gas and ion flow to an adiabatic compression-expansion process, of the type originally developed for the production of cluster beams [Kistiakowsky 1951; Deckers 1963; Campargue 1964; U.S. Pat. No. 3,583,633] and known as a free jet expansion. Such systems were later adapted to ESI-MS systems [Yamashita 1984; Bruins 1987; U.S. Pat. No. 453,056]. In any such process, supersonic velocities can be achieved, effectively by trading the thermal energy of ions and molecules for kinetic energy in the forward direction. As a result, the flow becomes collimated, allowing a considerable improvement in coupling efficiency into any downstream analysis device such as a mass filter.
A common method of free jet expansion involves expansion of the flow into an intermediate pressure chamber. The gas entering the chamber forms a barrel-shaped volume known as a shock bottle, bounded by oblique shock waves, at the end of which is located a normal shock known a Mach disc. Experiments have shown that, if the Mach disc can be punctured using a sharp conical metal skimmer, the flow through the skimmer orifice can undergo further shock-free expansion into a low-pressure chamber and hence remains collimated.
A key requirement is the ability to construct intermediate chambers with suitable input orifices and skimmer cones. Large metal skimmer cones can be fabricated using conventional machining. Smaller cones can be formed by electroplating layers of metal on the outside of a suitably shaped mandrel, machining away the tip to form an orifice, and detaching the electroplated structure using thermal shock [Gentry 1975]. The cone may then be attached to a bulkhead between the intermediate and low-pressure chambers. However, as systems become miniaturised, it becomes increasingly difficult to form suitable skimmer components with sufficient precision. Microfabrication methods such as electro-discharge-machining (EDM) may be used for the initial shaping [Kuo 1992]. Tapered skimmers with microscopic orifices may be constructed from melted and stretched silica capillaries [Grams 2006]. However, these methods yield discrete components that require alignment and attachment to pressure bulkheads.
In alternative applications, miniature nozzle components have been fabricated by etching pyramidal shaped holes in silicon substrates using anisotropic wet chemical etching [Mukherjee 2000]. However, the application was a microthruster, and cone-shaped skimmers were not formed. Microfabricated nozzles have also been fabricated by first etching a stepped hole in a silicon substrate by deep reactive ion etching (DRIE), forming a layer of silicon dioxide, and partly removing the silicon to reveal the silicon dioxide [Wang 2007]. However, the application was an electrospray source and smooth tapered features were not formed.
Vacuum interface components have been also formed in silicon. U.S. Pat. No. 7,786,434 described a silicon-based vacuum interface, formed by structuring silicon using plasma-based deep reactive ion etching (DRIE) and stacking etched dies together to form a complete intermediate chamber with aligned entrance and exit orifices. Similar components have been incorporated into miniature ESI-MS systems [Wright 2010; Malcolm 2011]. However, the design lacked a suitably shaped skimmer cone and instead used an etched capillary outlet, leading to a significant reduction in useful ion coupling efficiency. U.S. Pat. No. 7,922,920 described a similar interface component formed from stacked silicon dies, incorporating meandered input channels but again lacking a skimmer cone.
Accordingly there is a need to develop new methods capable of combining miniature skimmer cones with the other components needed to construct complete miniature vacuum interfaces capable of providing shock-free supersonic expansions.
These and other problems are addressed in accordance with the present teaching by method and device as detailed in the claims that follow. As will be appreciated from the following, the present teaching provides a method of combining a miniature skimmer cone with the back-plate of a miniature vacuum interface formed in silicon. When combined a front-plate carrying a suitable input orifice, and other components capable of acting as spacers, this allows construction of a complete miniature vacuum interface. The components may be fabricated in wafer-scale batches and then separated into individual dies to allow low cost fabrication of precision miniature components. These and other features will be appreciated with reference to the following detailed description which is provided to assist in an understanding of the present teaching.
The arrangement of
In accordance with the present teaching it is possible to fabricate a plurality of components in an integrated fashion so as to allow fabrication of a miniaturised structure.
The substrate is then immersed in a wet chemical etchant, whose operation is to etch down crystal planes. An example of a suitable etchant is potassium hydroxide (KOH); alternatives include tetramethyl ammonium hydroxide (TMAH). The action of the etchant is to form a square conical hole 204 in the region of the opening 203, whose sidewalls 205 belong to the family of <111> crystal planes and form an angle cos−1(1/√3)=54.536 degrees with the substrate surface. If the etching is carried out for a limited time, the hole will be blind, and the dimension at the base 206 will depend on the dimension of the mask opening 203 and the depth of etching. As a result, a suitable base dimension can be achieved by controlling the etching depth. For standard substrates, the etch depth may easily be several hundred microns. After completion of etching, the surface mask can be removed from both sides to reveal the substrate surface 207.
The etched side of the substrate is then coated with a semi conformal layer of material 208 that will eventually form the skimmer cone. An example of a suitable material is nickel, and an example of a suitable coating process is radio frequency (RF) sputter deposition of a thin adhesion layer and a thin nickel layer to act as a seed, followed by electroplating of a thicker nickel layer. The thick nickel layer is desirably several microns thick. A further thin layer 209 is then deposited to act as an etch stop against subsequent etching. An example of a suitable etch stop layer is titanium and gold, both deposited by RF sputtering. It will be appreciated that the metal layers together then form a blind, thin-walled conical pyramid.
The substrate is then turned over, and a thick layer of photoresist 210 is deposited and patterned lithographically to form a further mask for etching. The features thus defined can include mechanical supports and channels for gas pumping. The exposed substrate surface 211 is then anisotropically etched, to a depth that just reveals the blind tip 212 of the conical metal pyramid. An example of a suitable etching process is deep reactive ion etching, a form of plasma etching that uses inductively coupled plasma etching to remove material rapidly. The nickel layer across the blind tip is then removed by etching the exposed metal in a wet etchant, using the layer 213 as an etch stop. Further anisotropic etching is then carried out until the exposed substrate surface 214 has been lowered to a depth sufficient to achieve a desired height for the skimmer cone. The surface mask 210 and the etch-stop layer 213 are then removed, to leave an opening 215 in the skimmer cone. Dies are then separated along the example lines 216a, 216b to leave a completed part containing a skimmer cone 217 and other etched features 218 supported on a thinned substrate 219. Examples of suitable die singulation processes include cleaving, dicing and laser scribing.
The interface 500 further comprises a skimmer cone 518 integrally formed and extending inwardly from the second wall 503—as described above with reference to
It will be appreciated that the arrangement of
It will be further appreciated that formation of the exit orifice involves etching rather than conventional machining, and removal of the mould involves etching rather than detachment. As a result, the process yields a skimmer cone attached to a thinned substrate that can act as a pressure bulkhead and which forms an integral structure. It will also be appreciated that the bulkhead can carry other features needed in a complete vacuum interface such as mechanical supports and gas pumping channels.
In use the interface component is stacked together and mounted between pressure bulkheads 504 and 505 containing holes 506 and 507 using O-ring seals 508 and 509. The complete interface 500 lies between a high-pressure region 510 provided to a first side of the bulkhead 504 and a low-pressure region 511 provided to a first side of the bulkhead 505. In this way, it will be appreciated that the high and low pressure regions are provided on outer sides of each of the bulkheads 504, 505 whereas the interface is provided between the inner sides of each of the bulkheads 504, 505. It will be appreciated that the seals 508 are examples of resilient seals which are received and retained by the interface so as to allow a location of the interface between the first and second pressure bulkheads 504, 505. It will be appreciated that the formed vacuum interface provides a region of intermediate pressure between a high pressure region—typically atmospheric pressure—and a low pressure region—typically vacuum conditions—within which a mass spectrometer may be operated. In this way the interface with the formed skimmer provides a path to the inlet of a mass spectrometer. In use, the complete miniature vacuum interface as formed from the stacked assembly of a part containing an inlet orifice, a spacer, and the part containing a skimmer cone described above is mounted in an intermediate pressure chamber at the inlet to a mass spectrometer.
It will be appreciated that variants on the processing sequence described above may be used to achieve a substantially similar result. For example, it will be appreciated that processes other than crystal plane etching may be used to form the blind conical. Suitable processes include laser ablation. In this case a skimmer cone with cylindrical pyramidal shape will be obtained; this may be advantageous in reducing downstream shock formation.
It will also be appreciated that metals other than nickel that may also be deposited by electroplating may also be suitable for formation of the cone. Suitable metals include copper. It will also be appreciated that metals such as tungsten that may be deposited by chemical vapour deposition may also be suitable. In this way it will be appreciated that the present teaching is not intended to be limited to any one set of materials or components as departures from the explicit examples described herein will be appreciated by those or ordinary skill in the art.
It will also be appreciated that processes other than etching may be used to reveal the tip of the cone and open its orifice. Suitable processes include chemical mechanical polishing. However, in this case the second lithography step must be carried out after completion of polishing.
Finally it will be appreciated that alternative mask materials may be used. For example, the silicon nitride layer used as a mask against KOH etching may be replaced with silicon dioxide. Similarly, the silicon nitride layer may be retained as a mask during etching of the second set of features, or other masking layers more resilient to etching may be used.
It will be appreciated that the term the term microengineered refers to components that have dimensions of the order of micrometres. Devices per the present teaching may be fabricated using micro system technology and may be considered microelectromechanical (MEMS) type systems.
While exemplary arrangements have been described herein to assist in an understanding of the present teaching it will be understood that modifications can be made without departing from the scope of the present teaching. To that end it will be understood that the present teaching should be construed as limited only insofar as is deemed necessary in the light of the claims that follow. Furthermore, the words comprises/comprising when used in this specification are to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps, components or groups thereof.
Number | Date | Country | Kind |
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1515217.6 | Aug 2015 | GB | national |
Filing Document | Filing Date | Country | Kind |
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PCT/EP2016/066689 | 7/13/2016 | WO | 00 |