Electrolyte baths, which are used for electroplating, electroless plating, chemical etching, electrochemical etching, and electropolishing of metals and alloys, typically contain a large number of chemical components. The type and amount of each chemical component of a bath may have an impact on the plating or etching rate and the properties of the resulting surface or deposit. Despite many scientific studies, optimal compositions of electrolyte baths for etching and deposition are often chosen empirically. Often, the type and amount of additives to include in an electrolyte bath are a key consideration in determining bath compositions to perform the desired plating or etching. In other cases, such as alloy deposition, the ratio of salts that yields the desired composition of the deposited film are a key consideration in determining bath composition.
When screening (i.e., comparing) electrolyte bath compositions for their effect on plating or etching performance, the quality (for example, microstructure, composition, surface roughness, surface contamination) of the resulting film is a key consideration. The effect of bath composition on deposition or etch rate may also be a key metric. Screening one electrolyte component or constituent at a time may be costly and time-consuming.
Consideration is now being given to improving systems and methods for screening plating and etching bath compositions. The desirable bath composition screening systems and methods will be able to quickly and accurately determine the effect of a multitude of a multitude of bath compositions on desired plating and etching process characteristics.
Systems and methods for screening electrolyte bath compositions for their effect (e.g., electroplating, electroless plating, electrochemical etching, and chemical etching) on substrates are provided. The systems and methods are configured to screen or measure how electrolyte compositions affect or modify the plating or etching process under well controlled hydrodynamic and electrical conditions.
The systems and methods utilize screening devices with microfluidic channels, mechanisms for easily attaching and detaching substrates onto the devices, controlled movement of fluids, and electrochemical control or characterizing of plating and etching processes. The screening devices are configured to allow interrogation of a multitude of bath compositions in a single test setup.
A substrate is attached to a screening device for testing bath compositions. Portions of the substrate are exposed to the action of electrolyte fluids in the microfluidic channels. After deposition on or etching of the substrate attached to the screening device, the substrate can be detached (from the screening device) and its properties characterized (e.g., film thickness, composition, microstructure, surface contamination, etc.). The characterizations of the detached substrate may be performed with different characterization instruments or tools at different locations.
By enabling the interrogation of a multitude of bath compositions in a single test setup, the screening methods and systems disclosed herein advantageously afford a reduction in the time required to screen bath compositions and minimize the amount of electrolyte used per measurement. Furthermore, the systems can be inexpensively fabricated, lowering overall processing costs.
Further features of the disclosed subject matter, its nature, and various advantages will be more apparent from the following detailed description of the embodiments and the accompanying drawings, wherein like reference characters represent like elements throughout, and in which:
Systems and methods for screening electrolyte bath compositions are provided. The baths may be used for, for example, electroplating, electroless plating, chemical etching, electropolishing, or electrochemical etching processes. The screening systems and methods described herein enable the simultaneous screening of a plurality of bath compositions in a single test setup or experiment.
For convenience in description herein, the terms “plating,” “electroplating” and “electroless plating,” are used interchangeably with the equivalent terms “deposition,” “electrodeposition” and “electroless deposition,” respectively, as is common in the art. Processes such as electrochemical etching and electropolishing, in which a substrate is electrically controlled relative to a cathode to achieve oxidation, may also be called, for example, electro-etching, electrochemical machining or electrochemical polishing, depending on the application. The terms are used herein interchangeably, with an understanding that the need to screen electrolyte bath compositions is a desirable for all of these processes.
The screening systems and methods described herein can also be used to screen bath compositions for their impact on wafer cleaning. Wafer cleaning is an essential process step in modern semiconductor fabrication, which can be employed, for example, before or after other wafer processing steps such as chemical mechanical planarization (CMP). As CMP bath compositions are altered, for example, it is often necessary to screen for an effective composition of the bath fluids.
In addition to inorganic acids or salts, many plating or etching baths contain an extensive combination of organic additives that are present in very small concentrations. Inorganic additives such as chloride ions may also be included at a very small concentration. In plating baths, the organic additives (e.g., levelers, suppressors, inhibitors, accelerators, superfilling agents, surfactants, wetting agents, etc.) have a dramatic effect on deposit properties and also influence the plating rate. For etching baths, organic additives such as corrosion inhibitors, and inorganic ones such as chloride ions, are added to modify etching properties.
The screening systems and methods described herein can be used, for example, to screen for and tailor the amount of organic additives (e.g., accelerators) to be used in electrolyte baths. For the case of an acid-copper bath, for example, the amounts of sulfuric acid and cupric salt in the bath may be held constant and only the amount of, for example, an accelerator additive may be screened. In other cases, for example, the electropolishing of Cu in an electrolyte, various types of corrosion inhibitors in the electrolyte may be screened. The various types of corrosion inhibitors (e.g., a well-known inhibitor such as benzotriazole along with a family of molecules with a similar structure) may be screened in a single experiment or test setup. For the case of deposition of Au—Ag alloys, for example, the ratio of Au and Ag salts included in the deposition bath may be screened.
With bath composition information provided by screening using the systems and methods described herein, users can develop bath compositions which are perhaps completely novel or are simply tailored to a particular processing need at hand. As an important present day example, electroplating is used to deposit copper onto semiconductor wafers for making devices (chips) used in the computer industry. The economics of chip manufacturing requires a very high yield for each individual processing step in making the chips. Yields in a bath processing step can be greatly improved by maintaining electrolyte bath composition within a prescribed window of operation. Furthermore, as device features are reduced in size or materials change, there is a need to re-optimize additive compositions and, in some cases, to introduce new additives. The demand is thus significant for cost-effective screening methods. The disclosed subject matter enables the simultaneous screening of a multitude of bath compositions.
The systems and methods described herein achieve rapid screening using screening devices that utilize microfluidics, an interdisciplinary area of science and technology in which microfabrication methods are used to create small device structures (e.g., electrochemical cells and channels through which fluids can be pumped at low volumetric flow rates). Pumping mechanisms can be either an integral part of a microfabricated device or can exist as an “off-device” part of the system. In one low-cost embodiment, pumping may be achieved by one or more syringe pumps, each of which may drive one or more syringes feeding fluids into the microchannels.
Microfluidic technologies have been previously applied to monitoring how existing plating and etching bath compositions evolve in time due to aging. (See, e.g., West et al., International Patent Application No. PCT/US2006/012756 “SYSTEMS AND METHODS FOR MONITORING PLATING AND ETCHING BATHS,” filed Jun. 4, 2006, which is incorporated by reference herein in its entirety).
In contrast to their previous applications, microfluidic technologies are used in systems and methods disclosed herein as a tool to screen or measure how electrolyte composition modifies or effects the plating or etching process, while maintaining well controlled electrical and hydrodynamic conditions in an electrochemical cell.
Well controlled electrical conditions are necessary for successful application of the electrochemical screening methods. These require reproducible electrode surfaces and suitable electronics to allow for either two- or three-electrode measurements in combination with an electrochemical cell. The suitable electronics may typically include a potentiostat, a galvanostat, and/or a power supply, possibly combined with appropriate auxiliary equipment such as multimeters, voltmeters, coulometers, etc.
Additionally, reproducible and controllable fluid flow within the electrochemical cell is required. A rotating disk electrode is a well known facile method of creating reproducible flow conditions. The disadvantage of a rotating disk electrode, however, is that only a single bath composition can be studied at a time. The systems and methods disclosed herein, utilizing microfluidic technologies, provide very reproducible and controllable fluid flows in an electrochemical cell for screening for one or more bath compositions.
Body 100′ includes microfluidic channels 102 having inlet ports 101 and optional outlet ports (not shown), counterelectrode 103, and an optional reference electrode 104.
In a bath composition screening set-up, device 100 is placed against and clamped to substrate 106, which has a working electrode 105 disposed thereon. Working electrode 105 is coupled or exposed to the fluids filled in microchannels 102. Once assembled, electrolytes of possibly different compositions can flow into ports 101 leading to microfluidic channels 102 and act on portions of substrate 106 coupled to the microchannels 102.
In operation, the potential between the working and counterelectrodes is controlled using suitable electronics to achieve electrochemical reactions between the substrate and the fluids flowing through each of the eight microchannels 102. The electrochemical reactions may be etching or plating of the working electrode. The etching or plating may be different at different locations on the working electrode corresponding to different fluids in each microchannel 102. In the example shown in
Once the screening reactions have been performed, substrate 106/working electrode 105 is unclamped or detached from body 100′, and the impact of bath compositions on the plating or etching reactions on substrate 106 can be analyzed ex situ by any suitable method.
For etching and deposition applications (e.g., Cu deposition) involving silicon substrates commonly used in electronic device fabrication, substrate 106 may be a silicon wafer or a fragment of a silicon wafer on which a metallic film is disposed. The metallic film may be a blanket film of one or more metallic layers. For example, the metallic film may be a relatively flat thin layer of TaN upon which a Ru layer resides. Screening may be desired to investigate how bath additives impact Cu deposition properties (for example, nucleation and growth rates) on Ru. For this example, the subsequent ex situ characterization may involve optical or electron microscopy, or profilometry analysis at different positions on the substrate to determine, for example, deposited Cu film thickness. For other processing reactions of interest, substrate 106 may be a silicon wafer which contains microfabricated features, and the efficacy of additives in filling these features without defects may be screened. In such screening, the silicon substrate may be cross-sectioned and the feature-fill quality characterized by suitable microscopy.
The screening systems and methods disclosed herein advantageously allow screening for the impact of additives such as PVP by systematically varying its concentration in small increments to obtain in one experiment or test setup a detailed characterization of the influence of PVP concentration on deposition or etch rate.
In exemplary screening device 400, the counterelectrode is placed downstream of the working electrode to ensure that reactions occurring on its surface do not interfere with reactions occurring on the working electrode. For some applications, it may be desirable to situate the counterelectrode on the screening device at a location directly across the microfluidic channel from the working electrode. In such case, depending on the dimensions of the working electrode, products of the counterelectrode reaction may be swept downstream before reaching across to the working electrode. This is especially likely if gas bubbles that may be produced on the counterelectrode do not grow too large.
The substrates used with the screening devices (e.g., devices 100 and 400) need not be silicon-based substrates. For example, the substrate may consist of a thin metallic foil that is imbedded in an insulating material such as an epoxy. Such a thin metallic foil/epoxy substrate may be particularly advantageous for etching studies. For example, in the development of electrolytes for use in electrochemical polishing or electrochemical-mechanical polishing of metals such as Cu, Ta, Ru that rest on top of a silicon workpiece, the metallic films may be so thin that screening of the electrolyte using realistic silicon based substrates may not be practical. In such cases, etching studies can be facilitated by using metal foils that are imbedded in an otherwise insulating substrate, which can be easily attached and detached from the screening device (e.g., device 100). The subsequent ex situ characterization methods for the etching studies may involve microscopy or profilometry analysis at different positions on the metal foil/insulating substrate just like in the case of silicon-based substrates.
With renewed reference to
The structures of substrates suitable for use with the screening devices described herein and the fabrication steps for making such substrates may be simplified by including in the screening devices a thin masking layer that masks the fluid flowing in the micro fluid channels from the substrate except at defined openings or windows.
For some applications, the use of the screening devices (e.g., devices 100 and 400) can be further facilitated by integrating the working electrode current collector into body of the device.
It will be understood that substrates with device 700 used may be machined to ensure proper alignment of the substrate in the channels (e.g., channel 703). The electrodes (e.g., working electrodes) on which the electrolyte acts, may be flat or may have noticeable topographic features. For example, the electrodes may have high aspect ratio features that are difficult to plate by standard printed circuit board fabrication methods. In such cases, electrolyte composition may be screened by varying additive amounts. After the screening test, the so-called throwing power, determined by cross-sectioning and microscopy, may be a key metric in bath selection.
For certain applications, the substrates may also have through-mask structures.
It is expected that the systems and methods described herein will be used advantageously for the screening of additive compositions. For alloy composition, it may be desirable that the ratio of inorganic salts (e.g., NiCl2 and FeCl2) for Ni—Fe deposition may be screened. Screening may be accomplished with any of the exemplary devices described above (e.g., devices 100 and 400) with consideration of the type of substrate to be employed. After a screening run, the substrate may be characterized for deposit thickness and structure, and also to determine the deposit alloy composition. In the case of electroplating of gold alloys, it is expected that the systems and methods described herein will be used advantageously for economic screening of electrolyte compositions. The systems and methods described use plating solution volumes that are small relative to conventional testing methods, which feature can translate into significant cost savings because of the cost of gold.
The screening systems and methods have been described herein with regard to the structure of the screening devices and substrates, and the flows of different electrolyte bath compositions. It will be understood that the impact of bath composition on etching or plating processes also depends on the applied potential or current density flowing between the counterelectrode and working electrode. Therefore, for proper or complete screening, the electrolyte-substrate reactions and characterization (e.g., using device 100) may have to be repeated in test setups for different currents flowing between the counterelectrode and working electrode.
It will be understood that various microchannel and electrode configurations can be deployed in a screening device to allow screening of various combinations of electrolyte compositions and electrical potential/current conditions in a single test setup. For example, four bath compositions may be tested at four current densities with a single screening device. The flow of each bath composition fluid may be split into four separate streams via an external or on-chip manifold.
It is noted that the screening systems and methods have been described herein as involving a counterelectrode and suitable electronics since electroplating and electrochemical etching processes require an anode and a cathode. It will be, however, understood, the screening systems and methods disclosed herein may not require the counterelectrode when screening for electroless plating, chemical etching, or wafer cleaning bath composition. The devices disclosed above can be therefore fabricated without them, although for some studies, the counterelectrode and possibly the reference electrode may be desired.
The foregoing merely illustrates the principles of the invention. Various modifications and alterations to the described embodiments will be apparent to those skilled in the art in view of the teachings herein. It will be appreciated that those skilled in the art will be able to devise numerous modifications which, although not explicitly described herein, embody the principles of the invention and are thus within the spirit and scope of the invention.
This application is a continuation of International Application PCT/U.S.07/086,660, filed Dec. 6, 2007, which claims the benefit of U.S. Provisional Patent Application No. 60/868,869, filed Dec. 6, 2006, the contents of each of which are incorporated herein.
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Number | Date | Country | |
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Parent | PCT/US2007/086660 | Dec 2007 | US |
Child | 12478591 | US |