Patent Application
20230396931
This application claims the benefit of Taiwan Patent Application No. 111120507, filed on 1 Jun. 2022, which is hereby incorporated by reference for all purposes as if fully set forth herein.
The present invention mainly relates to an acoustic device, and in particular, to a microphone applied to the acoustic field and a micro-electromechanical system (MEMS) acoustic sensor therefor.
There are many kinds of microphones, such as a moving-coil microphone, a condenser microphone, an aluminum ribbon microphone, a carbon microphone, and the like. In addition, in mobile devices such as a mobile phone, an electret (ECM) condenser microphones and a micro-electromechanical system (MEMS) microphone are the most common. The MEMS utilizes the semiconductor process to manufacture micro-mechanical components and complete manufacturing of an acoustic sensor of the microphone through the semiconductor technology such as deposition and selective etching of the material layer.
The main factor affecting the sensitivity of the acoustic sensor of the conventional microphone is thicknesses of the electrode layer and the insulation layer of the manufactured acoustic sensor. Due to over-etching in the etching stage, the electrode layer and the insulation layer are jointly eroded, or upper and lower electrodes are adsorbed together, affecting the yield of the acoustic sensor and reducing the sensitivity of the acoustic sensor.
In view of this, it is necessary to provide a microphone and a micro-electromechanical system acoustic sensor therefor, so as to solve the above problems.
The present invention is intended to provide a micro-electromechanical system (MEMS) acoustic sensor, so as to increase the amplitude of electrode vibration caused by a sound source.
Another objective of the present invention is to provide a microphone having the MEMS acoustic sensor.
In order to achieve the objective, the present invention provides a MEMS acoustic sensor, including: a silicon substrate layer; at least one insulation layer arranged above the silicon substrate layer; two first electrode layers, respectively arranged above the at least one insulation layer and arranged opposite to each other at intervals; and two second electrode layers, respectively arranged above the two first electrode layers, where each of the second electrode layers is provided with at least one support member connected to the corresponding first electrode layer, the two second electrode layers form an acoustic flow channel together with a part of the insulation layer and the two first electrode layers, the acoustic flow channel has an inlet, the each second electrode layer has a front section closer to the inlet and a rear section, an outer side surface of the front section facing away from the acoustic flow channel forms a diverging first cambered surface along an acoustic flow direction of the acoustic flow channel, and an outer side surface of the rear section facing away from the acoustic flow channel continuously extends from a surface of the first cambered surface, and forms a tapered second cambered surface along the acoustic flow direction.
The present invention provides a MEMS acoustic sensor, including: a silicon substrate layer; at least one insulation layer arranged above the silicon substrate layer; two first electrode layers, respectively arranged above the at least one insulation layer and arranged opposite to each other at intervals; and two second electrode layers, respectively arranged above the two first electrode layers, where each of the second electrode layers is provided with at least one support member connected to the corresponding first electrode layer, the two second electrode layers form an acoustic flow channel together with a part of the insulation layer and the two first electrode layers, the acoustic flow channel has an inlet, the each second electrode layer has a front section closer to the inlet and a rear section, an inner side surface of the front section facing the acoustic flow channel forms a diverging first cambered surface along an acoustic flow direction of the acoustic flow channel, and an inner side surface of the rear section facing the acoustic flow channel continuously extends from a surface of the first cambered surface, and forms a tapered second cambered surface along the acoustic flow direction.
The present invention further provides a microphone, including a housing, having a first stacked region, a second stacked region, and a third stacked region, where the second stacked region is located between the first stacked region and the third stacked region, the first stacked region, the second stacked region, and the third stacked region jointly form an accommodating space, and the housing has a sound hole; the MEMS acoustic sensor, located in the accommodating space, where an inlet of the acoustic flow channel faces the sound hole; and an integrated circuit chip, electrically connected to the MEMS acoustic sensor and located in the accommodating space.
In some embodiments, each of the first electrode layers is composed of at least one electrode layer, a number of the at least one electrode layer is equal to a number of support members of each second electrode layer, and a cross-sectional area of the electrode layer is not less than a cross-sectional area of the support member.
In some embodiments, a number of support members of the each second electrode layer is two, and a through hole is provided between the two support members.
In some embodiments, a junction of the front section and the rear section is opposite to a central position of one of the two support members closer to the inlet.
In some embodiments, a material of the silicon substrate layer is silicon, silicon germanium, silicon carbide, a glass substrate, or a III-V compound substrate.
In some embodiments, a material of the insulation layer is silicon oxide, silicon nitride, silicon oxynitride, a dielectric material with a dielectric constant in a range of 2.5 to 3.9, or a dielectric material with a dielectric constant less than 2.5.
In some embodiments, the two first electrode layers and the two second electrode layers are all made of a conductive material.
In some embodiments, the conductive material is metal, a metal compound, or an ion-doped semiconductor material.
In some embodiments, a through hole is formed in the second stacked region in a radial direction of the accommodating space to form the sound hole.
In some embodiments, a through hole is formed in the third stacked region in an axial direction of the accommodating space to form the sound hole.
The microphone and the MEMS acoustic sensor therefor of the present invention have the following characteristics. By causing the front section of the second electrode layer to form a diverging cambered surface and the rear section of the second electrode layer to form a tapered cambered surface, the two second electrode layers can relatively shake when the sound source passes, resulting in the change in a distance between the two electrode layers, further changing the capacitance value, and finally causing the sound source to converge on an end of the each second electrode layer. Therefore, the microphone and the MEMS acoustic sensor therefor of the present invention have the effects of improving sensitivity and high directivity.
Embodiments of the present invention are described in detail below with reference to the accompanying drawings, the accompanying drawings are mainly simplified schematic diagrams, and only exemplify the basic structure of the present invention schematically. Therefore, only the components related to the present invention are shown in the drawings, and are not drawn according to the quantity, shape, and size of the components during actual implementation. During actual implementation, the type, quantity, and proportion of the components may be changed, and the layout of the components may be more complicated.
The directional terms mentioned in present invention, like “above”, “below”, “front”, or “back”, refer to the directions in the accompanying drawings. Therefore, the used direction terms are intended to describe and understand the present invention, but are not intended to limit the present invention. In addition, in the specification, unless explicitly described as contrary, the word “include” is understood as referring to including the element, but does not exclude any other elements.
Referring to
In this embodiment, a material of the silicon substrate layer 1 may be silicon, silicon germanium, silicon carbide, a glass substrate, or a III-V compound substrate (for example, a gallium nitride substrate and a gallium arsenide substrate).
The at least one insulation layer 2 is arranged above the silicon substrate layer 1. In this embodiment, a material of the insulation layer 2 may be silicon oxide, silicon nitride, silicon oxynitride, or a dielectric material. The dielectric material may be a low dielectric constant material (a dielectric constant ranges from 2.5 to 3.9) or an ultra-low dielectric constant material (a dielectric constant is less than 2.5).
In this embodiment, the two first electrode layers 3 may be made of a conductive material such as metal, a metal compound, or an ion-doped semiconductor material. The two first electrode layers 3 are respectively arranged above the insulation layer 2 and arranged opposite to each other at intervals.
In this embodiment, the two second electrode layers 4 may also be made of a conductive material such as metal, a metal compound, or an ion-doped semiconductor material. The two second electrode layers 4 are respectively arranged above the two first electrode layers 3. Each of the second electrode layers 4 has at least one support member 41 connected to the corresponding first electrode layer 3.
Referring to
Referring to
For example, when a number of the support members 41 is two, a through hole H is formed between the two support members 41. A junction of the front section 4a and the rear section 4b is opposite to a central position of one of the two support members 41 closer to the inlet E1.
Referring to
Referring to
Referring to
The housing 5 has a first stacked region 5a, a second stacked region 5b, and a third stacked region 5c. The second stacked region 5b is located between the first stacked region 5a and the third stacked region 5c. The first stacked region 5a, the second stacked region 5b, and the third stacked region 5c jointly form an accommodating space S. In this embodiment, the first stacked region 5a may be made of a conductive material or a printed circuit board, and the second stacked region 5b and the third stacked region 5c may be made of various plastic, metal, ceramic, a bakelite plate, glass fiber, or ceramic materials. The second stacked region 5b and the third stacked region 5c may be separated from each other or integrally formed.
The housing 5 has a sound hole 51 and a sound expelling hole 52. The sound hole 51 is used for external sound to enter the accommodating space S, and the sound expelling hole 52 is used for expelling the sound inside the housing 5, so that the sound will not generate echo in the housing 5 and affects the performance of the microphone. In this embodiment, a through hole may be formed in the second stacked region 5b in a radial direction of the accommodating space S according to the acoustic flow direction D of the acoustic flow channel C to extend through left and right surfaces of the corresponding second stacked region 5b, so as to form the sound hole 51, so that the sound hole 51 faces the inlet E1 of the acoustic flow channel C.
In another embodiment, a through hole may be formed in the third stacked region 5c in an axial direction of the accommodating space S to extend through upper and lower surfaces of the corresponding third stacked region 5c, so as to form the sound hole 51, so that the sound hole 51 faces the inlet E1 of the acoustic flow channel C. It is to be noted that in this embodiment, the arrangement direction of the MEMS acoustic sensor is such that the inlet E1 of the acoustic flow channel C faces the third stacked region 5c, so that the formed sound hole 51 can face the inlet E1.
On the other hand, an other through hole may be formed in the second stacked region 5b in a radial direction of the accommodating space S to extend through left and right surfaces of the corresponding second stacked region 5b, so as to form the sound expelling hole 52. Alternatively, an other through hole may be formed in the third stacked region 5c in an axial direction of the accommodating space S to extend through upper and lower surfaces of the corresponding third stacked region 5c, so as to form the sound expelling hole 52. Preferably, the sound expelling hole 52 is located on an opposite side of the sound hole 51.
Referring to
Carrying on with the above, according to the microphone and the MEMS acoustic sensor therefor of the present invention, by causing the front section of the second electrode layer to form a diverging cambered surface and the rear section of the second electrode layer to form a tapered cambered surface, the two second electrode layers can relatively shake when the sound source passes, resulting in the change in a distance between the two electrode layers, further changing the capacitance value, and finally causing the sound source to converge on ends of the second electrode layers. Therefore, the microphone and the MEMS acoustic sensor therefor of the present invention have the effects of improving sensitivity and high directivity.
The above embodiments merely exemplify the principles, features, and effects of the present invention, but are not intended to limit the implementation scope of the present invention. A person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present invention. Any equivalent change or modification made using the contents disclosed by the present invention shall fall within the scope of the claims below.
| Number | Date | Country | Kind |
|---|---|---|---|
| 111120507 | Jun 2022 | TW | national |
