BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a plane view of a microswitching device manufactured by a microstructure manufacturing method of the invention;
FIG. 2 is a partial plane view of the microswitching device of FIG. 1;
FIG. 3 is a cross-sectional view along line III-III in FIG. 1;
FIG. 4 is a cross-sectional view along line IV-IV in FIG. 1;
FIG. 5 is a cross-sectional view along line V-V in FIG. 1;
FIG. 6 shows a portion of the processes in the microstructure manufacturing method of the first aspect of the invention;
FIG. 7 shows processes following those of FIG. 6;
FIG. 8 shows processes following those of FIG. 7;
FIG. 9 shows processes following those of FIG. 8;
FIG. 10 is a plane view of a first intermediate manufactured object obtained in the course of the microstructure manufacturing method of the first aspect;
FIG. 11 is a plane view of a second intermediate manufactured object obtained in the course of the microstructure manufacturing method of the first aspect;
FIG. 12 is a partial enlarged cross-sectional view along line XII-XII in FIG. 11;
FIG. 13 is a partial enlarged cross-sectional view along line XIII-XIII in FIG. 11;
FIG. 14 is a partial enlarged cross-sectional view showing the same location as FIG. 12, after the cutting process;
FIG. 15 is a partial enlarged cross-sectional view showing the same location as FIG. 13, after the cutting process;
FIG. 16 shows a portion of the processes in the microstructure manufacturing method of a second aspect of the invention;
FIG. 17 shows processes following those of FIG. 16;
FIG. 18 shows processes following those of FIG. 17;
FIG. 19 shows processes following those of FIG. 18;
FIG. 20 is a plane view of a first intermediate manufactured object obtained in the course of the microstructure manufacturing method of the second aspect;
FIG. 21 is a plane view of a second intermediate manufactured object obtained in the course of the microstructure manufacturing method of the second aspect;
FIG. 22 is a partial enlarged cross-sectional view along line XXII-XXII in FIG. 21;
FIG. 23 is a partial enlarged cross-sectional view along line XXIII-XXIII in FIG. 21;
FIG. 24 is a partial enlarged cross-sectional view showing the same location as FIG. 22, after the cutting process;
FIG. 25 is a partial enlarged cross-sectional view showing the same location as FIG. 23, after the cutting process;
FIG. 26 is a plane view of a modified example of the microswitching device shown in FIG. 1;
FIG. 27 is a cross-sectional view along line XXVII-XXVII in FIG. 26;
FIG. 28 is a plane view of a first intermediate manufactured object obtained in the course of the microstructure manufacturing method of the modified example of the first aspect shown in FIG. 26;
FIG. 29 is a plane view of a second intermediate manufactured object obtained in the course of the microstructure manufacturing method of the modified example of the second aspect shown in FIG. 26;
FIG. 30 is a partial plane view of a microswitching device of the prior art, manufactured using MEMS technology;
FIG. 31 is a cross-sectional view along line XXXI-XXXI in FIG. 30;
FIG. 32 shows a portion of the manufacturing method of the microswitching device shown in FIG. 30;
FIG. 33 shows processes following those of FIG. 32; and
FIG. 34 shows a portion of the processes of another manufacturing method of the microswitching device shown in FIG. 30.
Patent Application
20070172988
