The present invention relates to a microwave heating device. More particularly, the present invention relates to a microwave heating device which is applicable to a vacuum processing apparatus for processing semiconductors.
Electric resistance heating devices are generally used in semiconductor manufacturing processes. Since a heating coil is covered in a heating body of the electric resistance heating device, the electric resistance heating device itself is difficult to manufacture, and is limited by the manufacturing method, thus causing defects and affecting the service life of the electric resistance heating device. In addition, the electric resistance heating device has a smaller heating rate and has a serious energy consumption problem, which does not meet the requirement of use efficiency.
Therefore, one objective of the present invention is to provide a microwave heating device which has advantages of simple structure, easy operation and energy saving.
According to the aforementioned objectives, the present invention provides a microwave heating device. The microwave heating device includes a waveguide, a metal plate, a magnetron, a heat generating plate, a thermal insulation member and an adjusting member. The waveguide has a waveguide space, in which a sidewall of the waveguide has an opening communicating the waveguide space. The metal plate covers the opening to seal the waveguide space. The magnetron is configured to generate microwaves, in which an output end of the magnetron protrudes into the waveguide space. The heat generating plate is disposed in the waveguide space and is contacted with the metal plate, in which the heat generating plate is configured to absorb microwaves. The thermal insulation member is partially covers the heat generating plate. The adjusting member is disposed in the waveguide space and is located under the heat generating plate.
According to an embodiment of the present invention, the microwave heating device further includes a microwave isolator. The magnetron and the microwave isolator are respectively located at two opposite sides of the adjusting member.
According to an embodiment of the present invention, the waveguide is a WR340 waveguide, and a microwave frequency of the magnetron is 2.45 GHz.
According to an embodiment of the present invention, the waveguide is a WR430 waveguide, and a microwave frequency of the magnetron is 915 MHz.
According to an embodiment of the present invention, the metal plate includes an aluminum plate, an iron plate or a stainless steel plate.
According to an embodiment of the present invention, the heat generating plate includes a silicon carbide plate.
According to an embodiment of the present invention, the thermal insulation member includes a plastic thermal insulation member or a ceramic thermal insulation member.
According to an embodiment of the present invention, the adjusting member includes a trapezoidal structure, and the trapezoidal structure has a top surface and at least two inclined surfaces connected to the top surface, and the top surface is located under the heat generating plate.
According to an embodiment of the present invention, the metal plate has an inner surface and an outer surface opposite to the inner surface, in which the inner surface faces towards the waveguide space and is contacted with the heat generating plate, and the outer surface faces towards an outer side of the waveguide. The microwave heating device further includes a vacuum chamber covering the outer surface of the metal plate.
According to an embodiment of the present invention, the microwave heating device further includes a temperature sensor. The temperature sensor is disposed in the vacuum chamber.
According to the aforementioned embodiments of the present invention, the microwave heating device has the adjusting member, and the microwave heating temperature can be adjusted by changing different heights of adjusting members, or by adjusting the height of the adjusting member under the same condition of the magnetron power. Therefore, the microwave heating device of the present invention has advantages of easy operation and energy saving.
On the other hand, the temperature distribution effect and the heating rate of the microwave heating device of the present invention are better than those of the conventional electric resistance heating device, and the overall structure of the microwave heating device of the present invention is also simpler than that of the electric resistance heating device, and the energy consumption of the microwave heating device of the present invention is also low. In addition, the microwave heating device is easy to control in the single mode and is suitable to be used in a vacuum environment.
The invention can be more fully understood by reading the following detailed description of the embodiment, with reference made to the accompanying drawings as follows:
Reference will now be made in detail to the present embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
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In one embodiment, the waveguide 110 is WR340 waveguide, and the frequency of the magnetron 130 is 2.45 GHz. In other embodiments, the waveguide 110 is WR430 waveguide, and the frequency of the magnetron 130 is 915 MHz. Therefore, microwaves can be formed in TE10 single mode in the waveguide 110. The microwave heating device 100 of the present embodiment is mainly used to heat micro semiconductors with smaller than 1 inch diameter, such as 0.5 inch diameter. In other words, the overall size of the microwave heating device 100 of the present invention is smaller than that of a conventional microwave heating device, and therefore it is merely necessary to use single mode microwave which has an advantage of easy-to-control.
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In some embodiments, a temperature sensor 181 can be disposed in the vacuum chamber 180. The temperature sensor 181 can be used to detect actual temperature of the heat generated from the microwaves which can be used as a reference for a feedback controller. On the other hand, users also can adjust power of the magnetron 130 according to the detected temperature, or can control microwave temperature by changing the adjusting members with different heights.
According to the aforementioned embodiments of the present invention, the microwave heating device has the adjusting member, and the microwave heating temperature can be adjusted by changing different heights of adjusting members, or by adjusting the height of the adjusting member under the same condition of the magnetron power. Therefore, the microwave heating device of the present invention has advantages of easy operation and energy saving.
On the other hand, the temperature distribution effect and the heating rate of the microwave heating device of the present invention are better than those of the conventional electric resistance heating device, and the overall structure of the microwave heating device of the present invention is also simpler than that of the electric resistance heating device, and the energy consumption of the microwave heating device of the present invention is also low. In addition, the microwave heating device is easy to control in the single mode and is suitable to be used in a vacuum environment.
Although the present invention has been described in considerable detail with reference to certain embodiments thereof, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.
It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims.