Claims
- 1. A method of storing data in a Langmuir film deposited on a conducting substrate, said film containing an excess of positive ions, comprising the steps of:
- bombarding a surface of said film at an address on said surface where a data bit is to be stored with a low intensity electron beam;
- applying simultaneously with said bombardment of said address a potential to said substrate adapted to generate a gradiant sufficient to mobilize said ions towards the surface of said film; and
- removing said potential and said bombardment when said ions are proximate said surface.
- 2. A method of storing data as in claim 1 wherein the polarity of said potential applied to said substrate is such that said ions mobilize toward the base of said film.
- 3. A method of storing data as in claim 1 and including means for erasing said stored data by moving charged particles to one surface of a film.
CROSS-REFERENCE TO OTHER APPLICATIONS
This is a division of application Ser. No. 507,278, filed Sept. 19, 1974, which issued as U.S. Pat. No. 3,936,690 on Feb. 3, 1976.
US Referenced Citations (4)
Divisions (1)
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Number |
Date |
Country |
Parent |
507278 |
Sep 1974 |
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