Claims
- 1. An infrared detection circuit comprising:
- an infrared hot electron transistor having an emitter, base, and collector, the base being common;
- an emitter voltage supply connected between the emitter and the base;
- a collector voltage supply connected between the collector and the base; and
- a load connected between the collector and said collector supply voltage,
- wherein an amplified output voltage is obtained when infrared radiation is detected by said infrared hot electron transistor and wherein: ##EQU8## wherein, R.sub.L =the value of said load,
- r=the value of the internal resistance between the emitter and the base, and
- .alpha.=the value of said infrared hot electron transistor photocurrent transfer ratio.
- 2. An infrared detection circuit comprising:
- an infrared hot electron transistor having an emitter, base, and collector, the base being common;
- an emitter voltage supply connector between the emitter and the base;
- a collector voltage supply connected between the collector and the base;
- a load connected between the collector and said collector voltage supply; and
- a non-inverting constant gain multiplier coupled between the collector and the base of said infrared hot electron transistor, wherein the photovoltage is amplified.
- 3. An infrared detection circuit as in claim 2 wherein:
- said non-inverting constant gain multiplier is DC coupled.
- 4. An infrared detection circuit as in claim 2 wherein:
- said non-inverting constant gain multiplier includes an operational amplifier.
GOVERNMENT INTEREST
The invention described herein may be manufactured, used, and licensed by or for the government for governmental purposes without the payment to me of any royalty thereon.
US Referenced Citations (6)
Non-Patent Literature Citations (1)
Entry |
K. Choi, "10 Micrometer infrared hot-electron transistors", Applied Physicsetters, vol. 57, (1990), pp. 1348-1350. |