The technology disclosed herein relates to fiber lasers and fiber-coupled lasers. More particularly, the disclosed technology relates to methods of manufacturing semiconductors and other electronic devices by adjusting laser beam characteristics at an output of a fiber laser or fiber-coupled laser.
The use of high-power fiber-coupled lasers continues to gain popularity for a variety of applications, such as materials processing, cutting, welding, and/or additive manufacturing. These lasers include, for example, fiber lasers, disk lasers, diode lasers, diode-pumped solid state lasers, and lamp-pumped solid state lasers. In these systems, optical power is delivered from the laser to a work piece via an optical fiber.
Various fiber-coupled laser materials processing tasks require different beam characteristics (e.g., spatial profiles and/or divergence profiles). For example, cutting thick metal and welding generally require a larger spot size than cutting thin metal. Ideally, the laser beam properties would be adjustable to enable optimized processing for these different tasks. Conventionally, users have two choices: (1) Employ a laser system with fixed beam characteristics that can be used for different tasks but is not optimal for most of them (i.e., a compromise between performance and flexibility); or (2) Purchase a laser system or accessories that offer variable beam characteristics but that add significant cost, size, weight, complexity, and perhaps performance degradation (e.g., optical loss) or reliability degradation (e.g., reduced robustness or up-time). Currently available laser systems capable of varying beam characteristics require the use of free-space optics or other complex and expensive add-on mechanisms (e.g., zoom lenses, mirrors, translatable or motorized lenses, combiners, etc.) in order to vary beam characteristics. No solution exists that provides the desired adjustability in beam characteristics that minimizes or eliminates reliance on the use of free-space optics or other extra components that add significant penalties in terms of cost, complexity, performance, and/or reliability. What is needed is an in-fiber apparatus for providing varying beam characteristics that does not require or minimizes the use of free-space optics and that can avoid significant cost, complexity, performance tradeoffs, and/or reliability degradation.
Semiconductor wafers, printed circuit boards, photovoltaic cells, ceramics, metals, and other materials (conductive and insulative) are often laser-processed for micro-electronic fabrication. These laser processing techniques may utilize fixed beams, galvo scanners, or free-space zoom processing optics to drill or trepan cylindrical or shaped holes/vias as well as cut, dice, scribe, score, pattern layers or perform other processes, such as soldering, selective deposition or welding in micro-electronic fabrication. Typically, the laser system for each process is limited to one beam shape designed to do one process, limiting the productivity or versatility of the processing tool.
At least disclosed herein are methods, systems and apparatus for varying optical beam characteristics. Methods may include, perturbing an optical beam propagating within a first length of fiber to adjust one or more beam characteristics of the optical beam in the first length of fiber or a second length of fiber or a combination thereof, coupling the perturbed optical beam into a second length of fiber and maintaining at least a portion of one or more adjusted beam characteristics within a second length of fiber having one or more confinement regions. Methods may further include generating a selected output beam from the second length of fiber having the adjusted beam characteristics responsive to a selection of a first refractive index profile (RIP) of the first length of fiber or a second RIP of the second length of fiber or a combination thereof. In some examples, the one or more beam characteristics of the perturbed optical beam are adjusted based on selection of one or more core dimensions of the first length of fiber or one or more confinement region dimensions of the second length of fiber or a combination thereof to generate an adjusted optical beam responsive to perturbing the first length of fiber, the adjusted optical beam having a particular adjusted: beam diameter, divergence distribution, beam parameter product (BPP), intensity distribution, luminance, M2 value, numerical aperture (NA), optical intensity, power density, radial beam position, radiance, or spot size, or any combination thereof at an output of the second length of fiber. In some example, methods include perturbing the optical beam by bending the first length of fiber to alter a bend radius or alter a length of a bent region of the first length of fiber or a combination thereof such that one or more modes of the optical beam are displaced radially with respect to a longitudinal axis of the first length of fiber wherein the second length of fiber has an RIP that defines a first confinement region and a second confinement region. In some examples, the adjusted one or more beam characteristics are produced by confining the optical beam in the two or more confinement regions of the second length of fiber. The example methods may further comprise launching the perturbed optical beam from the first length of fiber into the first confinement region or the second confinement region or a combination thereof such that one or more displaced modes of the optical beam are selectively coupled into and maintained in the first confinement region or the second confinement region, or a combination thereof. Disclosed methods may include, perturbing the one or more beam characteristics of the optical beam by perturbing the first length of fiber or the optical beam in the first length of fiber or a combination thereof to adjust at least one beam characteristic of the optical beam at an output of the second length of fiber. Perturbing the first length of fiber may include bending, bending over a particular length, micro-bending, applying acousto-optic excitation, thermal perturbation, stretching, or applying piezo-electric perturbation, or any combination thereof. The second length of fiber may comprise a first confinement region comprising a central core and a second confinement region comprising an annular core encompassing the first confinement region. Adjusting the one or more beam characteristics of the optical beam may include selecting a RIP of the first length of fiber to generate a desired mode shape of a lowest order mode, one or more higher order modes, or a combination thereof subsequent to the adjusting. In some examples, the first length of fiber has a core with a parabolic index profile radially spanning some or all of the core. A RIP of the first length of fiber may be selected to increase or decrease a width of the lowest order mode, the higher order modes, or a combination thereof responsive to the perturbing the optical beam. The first length of fiber or the second length of fiber or a combination thereof may include at least one divergence structure configured to modify a divergence profile of the optical beam. The confinement regions may be separated by one or more cladding structures, wherein the divergence structure may be disposed within at least one confinement region separate from the cladding structure and comprising material having a lower index than the confinement region adjacent to the divergence structure. In some examples, the second length of fiber may be azimuthally asymmetric.
Apparatus disclosed herein may include an optical beam delivery device, comprising a first length of fiber comprising a first RIP formed to enable modification of one or more beam characteristics of an optical beam by a perturbation device and a second length of fiber having a second RIP coupled to the first length of fiber, the second RIP formed to confine at least a portion of the modified beam characteristics of the optical beam within one or more confinement regions. In some examples, the first RIP and the second RIP are different. In some examples, the second length of fiber comprises a plurality of confinement regions. The perturbation device may be coupled to the first length of fiber or integral with the first length of fiber or a combination thereof. The first length of fiber may comprise a graded-index RIP in at least a radially central portion and the second length of fiber has a first confinement region comprising a central core and a second confinement region that is annular and encompasses the first confinement region. The first confinement region and the second confinement region may be separated by a cladding structure having a refractive index that is lower than the indexes of first confinement region and the second confinement region. The cladding structure may comprise a fluorosilicate material. The first length of fiber or the second length of fiber or a combination thereof may include at least one divergence structure configured to modify a divergence profile of the optical beam and wherein the divergence structure may comprise a first material having a lower index of refraction than a second material encompassing the divergence structure. The second length of fiber may be azimuthally asymmetric and may comprise a first confinement region comprising a first core and a second confinement region comprising a second core. In some examples, the first confinement region and the second confinement region may be coaxial. In other examples, the first confinement region and the second confinement region may be non-coaxial. The second confinement region may be crescent shaped in some examples. The first RIP may be parabolic in a first portion having a first radius. In some examples, the first RIP may be constant in a second portion having a second radius, wherein the second radius is larger than the first radius. The first RIP may comprise a radially graded index extending to an edge of a core of the first length of fiber, wherein the first RIP is formed to increase or decrease a width of one or more modes of the optical beam responsive to the modification of the beam characteristics by the perturbation device. The first length of fiber may have a radially graded index core extending to a first radius followed by a constant index portion extending to a second radius, wherein the second radius is larger than the first radius. In some examples, the second length of fiber comprises a central core having a diameter in a range of about 0 to 100 microns, a first annual core encompassing the central core having a diameter in a range of about 10 to 600 microns and a second annual core having a diameter in a range of about 20 to 1200 microns. The perturbation device may comprise a bending assembly configured to alter a bend radius or alter a bend length of the first length of fiber or a combination thereof to modify the beam characteristics of the optical beam. In some examples, a perturbation assembly may comprise a bending assembly, a mandrel, micro-bend in the fiber, an acousto-optic transducer, a thermal device, a fiber stretcher, or a piezo-electric device, or any combination thereof. The first length of fiber and the second length of fiber may be separate passive fibers that are spliced together.
Systems disclosed herein may include, an optical beam delivery system, comprising an optical fiber including a first and second length of fiber and an optical system coupled to the second length of fiber including one or more free-space optics configured to receive and transmit an optical beam comprising modified beam characteristics. The first length of fiber may include a first RIP formed to enable, at least in part, modification of one or more beam characteristics of an optical beam by a perturbation assembly arranged to modify the one or more beam characteristics, the perturbation assembly may be coupled to the first length of fiber or integral with the first length of fiber, or a combination thereof. The second length of fiber may be coupled to the first length of fiber and may include a second RIP formed to preserve at least a portion of the one or more beam characteristics of the optical beam modified by the perturbation assembly within one or more first confinement regions. In some examples, the first RIP and the second RIP are different.
The optical beam delivery system may further include a first process fiber coupled between a first process head and the optical system, wherein the first process fiber is configured to receive the optical beam comprising the modified one or more beam characteristics. The first process fiber may comprise a third RIP configured to preserve at least a portion of the modified one or more beam characteristics of the optical beam within one or more second confinement regions of the first process fiber. In an example, at least a portion of the free-space optics may be configured to further modify the modified one or more beam characteristics of the optical beam. The one or more beam characteristics may include beam diameter, divergence distribution, BPP, intensity distribution, luminance, M2 value, NA, optical intensity, power density, radial beam position, radiance, or spot size, or any combination thereof. The third RIP may be the same as or different from the second RIP. The third RIP may be configured to further modify the modified one or more beam characteristics of the optical beam. In some examples, at least one of the one or more second confinement regions includes at least one divergence structure configured to modify a divergence profile of the optical beam. The divergence structure may comprise an area of lower-index material than that of the second confinement region.
The optical beam delivery system may further include a second process fiber having a fourth RIP that is coupled between the optical system and a second process head, wherein the second process fiber may be configured to receive the optical beam comprising the modified one or more beam characteristics within one or more second confinement regions of the second process fiber. In some examples, the first process fiber or the second process fiber or a combination thereof may be configured to further modify the modified one or more beam characteristics of the optical beam. The second process fiber may include at least one divergence structure configured to modify a divergence profile of the optical beam. The second process fiber may comprise a central core surrounded by at least one of the one or more second confinement regions, wherein the core and the second confinement region are separated by a cladding structure having a first index of refraction that is lower than a second index of refraction of the central core and a third index of refraction of the second confinement region, wherein the second confinement region may include the at least one divergence structure. The at least one divergence structure may comprise an area of lower-index material than that of the second confinement region. In an example, the second RIP may be different from the third RIP or the fourth RIP or a combination thereof. Alternatively, the second RIP may be the same as the third RIP or the fourth RIP or a combination thereof. The one or more beam characteristics that may be modified can include beam diameter, divergence distribution, BPP, intensity distribution, luminance, M2 value, NA, optical intensity, power density, radial beam position, radiance, or spot size, or any combination thereof.
In some examples, at least a portion of the free-space optics may be configured to further modify the modified one or more beam characteristics of the optical beam. The first process fiber may be coupled between a first process head and the optical system, wherein the first process fiber is configured to receive the optical beam comprising twice modified one or more beam characteristics. The first process fiber may have a third RIP configured to preserve at least a portion of the twice modified one or more beam characteristics of the optical beam within one or more second confinement regions of the first process fiber. The third RIP may be different from the second RIP, wherein the third RIP is configured to further modify the twice modified one or more beam characteristics of the optical beam.
In some examples, the first process fiber may include a divergence structure configured to further modify the twice modified one or more beam characteristics of the optical beam. In some examples, a second process fiber may be coupled between the optical system and a second process head, wherein the second process fiber is configured to receive the twice modified one or more beam characteristics.
In some examples, the first process fiber or the second process fiber or a combination thereof is configured to further modify the twice modified one or more beam characteristics of the optical beam. The first process fiber or the second process fiber or a combination thereof may include at least one divergence structure configured to further modify the twice modified one or more beam characteristics of the optical beam. The optical system may be a fiber-to-fiber coupler, a fiber-to-fiber switch or a process head, or the like or a combination thereof.
The following embodiments are also included in the present disclosure:
1.01 A method of tailoring beam characteristics of a laser beam during fabrication of an electronic device, the method comprising: providing a substrate comprising one or more layers; adjusting one or more characteristics of a laser beam; and impinging the laser beam having the adjusted beam characteristics on the substrate to carry out at least one process step for fabricating the electronic device. The adjusting of the laser beam comprises: perturbing the laser beam propagating within a first length of fiber to adjust the one or more beam characteristics of the laser beam in the first length of fiber or a second length of fiber or a combination thereof, the second length of fiber having two or more confinement regions; coupling the perturbed laser beam into the second length of fiber; and emitting the laser beam having the adjusted beam characteristics from the second length of fiber.
1.02 The method of claim 1.01, wherein the one or more layers comprise materials chosen from electrical conductors, electrical insulators, semiconductors, and combinations thereof.
1.03 The method according to any of claims 1.01 to 1.02, wherein the at least one process step comprises removing a portion of the one or more layers.
1.04 The method according to any of claims 1.01 to 1.03, wherein the at least one process step comprises drilling a first via in the one or more layers.
1.05 The method according to any of claims 1.01 to 1.04, wherein the one or more layers comprise a first layer and a second layer, the second layer comprising a different material than the first layer.
1.06 The method according to any of claims 1.01 to 1.05, wherein the at least one process step comprises removing a portion of the first layer and then removing a portion of the second layer, the laser beam having a first set of beam characteristics during the removing of the portion of the first layer and a second set of beam characteristics during the removing of the portion of the second layer, the second set of beam characteristics being different than the first set of beam characteristics.
1.07 The method according to any of claims 1.01 to 1.05, wherein the at least one process step comprises removing a portion of the first layer and employing the second layer as a stop layer, the adjusting of the one or more characteristics improving a laser beam selectivity for removing the portion of the first layer from the second layer compared to the laser beam selectivity prior to the adjusting of the one or more characteristics.
1.08 The method according to any of claims 1.01 to 1.07, further comprising drilling a second via, the first via having a first diameter and the second via having a second diameter that is different than the first diameter.
1.09 The method according to claim 1.08, wherein the laser beam has a first set of beam characteristics during the drilling of the first via and a second set of beam characteristics during the drilling of the second via, the second set of beam characteristics being different than the first set of beam characteristics.
1.10 The method according to any of claims 1.04 to 1.09, wherein drilling the via (and optionally the second via) comprises trepanning, the trepanning comprises drilling a hole having a first width in at least one of the one or more layers and then expanding the hole to have a second width that is larger than the first width by moving the laser beam relative to the substrate.
1.11 The method of claim 1.10, wherein the laser beam has a first set of beam characteristics during the drilling of the hole and a second set of beam characteristics during the expanding the hole, the second set of beam characteristics being different than the first set of beam characteristics.
1.12 The method according to any of claims 1.01 to 1.11, wherein the at least one process step comprises scribing the substrate to have a scribe line.
1.13 The method of claim 1.12, wherein adjusting the one or more beam characteristics adjusts a width of the scribe line.
1.14 The method according to any of claims 1.01 to 1.13, wherein the at least one process step comprises annealing at least one of the one or more layers.
1.15 The method according to any of claims 1.01 to 1.14, wherein the adjusting the beam is carried out while the beam impinges on the substrate.
1.16 The method according to any of claims 1.01 to 1.15, wherein adjusting the one or more beam characteristics of the laser beam comprises adjusting one or more of a beam diameter, divergence distribution, beam parameter product (BPP), intensity distribution, luminance, M2 value, numerical aperture (NA), optical intensity, power density, radial beam position, radiance or spot size, or any combination thereof.
1.17 The method according to any of claims 1.01 to 1.16, wherein the adjusting the one or more beam characteristics is carried out without using free-space optics.
1.18 The method according to any of claims 1.01 to 1.17, wherein the adjusting the one or more beam characteristics of the laser beam comprises adjusting a beam parameter product of the laser beam.
1.19 The method according to any of claims 1.01 to 1.18, wherein the adjusting the one or more beam characteristics of the laser beam comprises adjusting one or more of a divergence distribution or an intensity distribution, or a combination thereof.
1.20 The method according to any of claims 1.01 to 1.19, wherein the electronic device is an integrated circuit, a semiconductor device, a microcircuit, a printed circuit board, a flex circuit, a micromachine, a display screen or a photovoltaic cell.
1.21 The method according to any of claims 1.01 to 1.20, wherein the at least one process step comprises selectively depositing a layer onto the substrate.
1.22 The method according to any of claims 1.01 to 1.21, wherein the at least one process step comprises soldering.
1.23 The method according to any of claims 1.01 to 1.22, wherein the at least one process step comprises welding.
2.01 A method of tailoring beam characteristics of a laser beam, the method comprising: perturbing the laser beam propagating within a first length of fiber to adjust the one or more beam characteristics of the laser beam in the first length of fiber or a second length of fiber or a combination thereof, the second length of fiber having two or more confinement regions; coupling the perturbed laser beam into the second length of fiber; and emitting the laser beam having the adjusted beam characteristics from the second length of fiber.
2.02 The method of claim 2.01, wherein the tailoring of the beam characteristics occurs during fabrication of an electronic device.
The accompanying drawings, wherein like reference numerals represent like elements, are incorporated in and constitute a part of this specification and, together with the description, explain the advantages and principles of the presently disclosed technology. In the drawings,
As used herein throughout this disclosure and in the claims, the singular forms “a,” “an,” and “the” include the plural forms unless the context clearly dictates otherwise. Additionally, the term “includes” means “comprises.” Further, the term “coupled” does not exclude the presence of intermediate elements between the coupled items. Also, the terms “modify” and “adjust” are used interchangeably to mean “alter.”
The systems, apparatus, and methods described herein should not be construed as limiting in any way. Instead, the present disclosure is directed toward all novel and non-obvious features and aspects of the various disclosed embodiments, alone and in various combinations and sub-combinations with one another. The disclosed systems, methods, and apparatus are not limited to any specific aspect or feature or combinations thereof, nor do the disclosed systems, methods, and apparatus require that any one or more specific advantages be present or problems be solved. Any theories of operation are to facilitate explanation, but the disclosed systems, methods, and apparatus are not limited to such theories of operation.
Although the operations of some of the disclosed methods are described in a particular, sequential order for convenient presentation, it should be understood that this manner of description encompasses rearrangement, unless a particular ordering is required by specific language set forth below. For example, operations described sequentially may in some cases be rearranged or performed concurrently. Moreover, for the sake of simplicity, the attached figures may not show the various ways in which the disclosed systems, methods, and apparatus can be used in conjunction with other systems, methods, and apparatus. Additionally, the description sometimes uses terms like “produce” and “provide” to describe the disclosed methods. These terms are high-level abstractions of the actual operations that are performed. The actual operations that correspond to these terms will vary depending on the particular implementation and are readily discernible by one of ordinary skill in the art.
In some examples, values, procedures, or apparatus are referred to as “lowest”, “best”, “minimum,” or the like. It will be appreciated that such descriptions are intended to indicate that a selection among many used functional alternatives can be made, and such selections need not be better, smaller, or otherwise preferable to other selections. Examples are described with reference to directions indicated as “above,” “below,” “upper,” “lower,” and the like. These terms are used for convenient description, but do not imply any particular spatial orientation.
Definitions of words and terms as used herein:
Disclosed herein are methods, systems, and apparatus configured to provide a fiber operable to provide a laser beam having variable beam characteristics (VBC) that may reduce cost, complexity, optical loss, or other drawbacks of the conventional methods described above. This VBC fiber is configured to vary a wide variety of optical beam characteristics. Such beam characteristics can be controlled using the VBC fiber thus allowing users to tune various beam characteristics to suit the particular requirements of an extensive variety of laser processing applications. For example, a VBC fiber may be used to tune: beam diameter, beam divergence distribution, BPP, intensity distribution, M2 factor, NA, optical intensity, power density, radial beam position, radiance, spot size, or the like, or any combination thereof.
In general, the disclosed technology entails coupling a laser beam into a fiber in which the characteristics of the laser beam in the fiber can be adjusted by perturbing the laser beam and/or perturbing a first length of fiber by any of a variety of methods (e.g., bending the fiber or introducing one or more other perturbations) and fully or partially maintaining adjusted beam characteristics in a second length of fiber. The second length of fiber is specially configured to maintain and/or further modify the adjusted beam characteristics. In some cases, the second length of fiber preserves the adjusted beam characteristics through delivery of the laser beam to its ultimate use (e.g., materials processing). The first and second lengths of fiber may comprise the same or different fibers.
The disclosed technology is compatible with fiber lasers and fiber-coupled lasers. Fiber-coupled lasers typically deliver an output via a delivery fiber having a step-index refractive index profile (RIP), i.e., a flat or constant refractive index within the fiber core. In reality, the RIP of the delivery fiber may not be perfectly flat, depending on the design of the fiber. Important parameters are the fiber core diameter (dcore) and NA. The core diameter is typically in the range of 10-1000 micron (although other values are possible), and the NA is typically in the range of 0.06-0.22 (although other values are possible). A delivery fiber from the laser may be routed directly to the process head or work piece, or it may be routed to a fiber-to-fiber coupler (FFC) or fiber-to-fiber switch (FFS), which couples the light from the delivery fiber into a process fiber that transmits the beam to the process head or the work piece.
Most materials processing tools, especially those at high power (>1 kW), employ multimode (MM) fiber, but some employ single-mode (SM) fiber, which is at the lower end of the dcore and NA ranges. The beam characteristics from a SM fiber are uniquely determined by the fiber parameters. The beam characteristics from a MM fiber, however, can vary (unit-to-unit and/or as a function of laser power and time), depending on the beam characteristics from the laser source(s) coupled into the fiber, the launching or splicing conditions into the fiber, the fiber RIP, and the static and dynamic geometry of the fiber (bending, coiling, motion, micro-bending, etc.). For both SM and MM delivery fibers, the beam characteristics may not be optimum for a given materials processing task, and it is unlikely to be optimum for a range of tasks, motivating the desire to be able to systematically vary the beam characteristics in order to customize or optimize them for a particular processing task.
In one example, the VBC fiber may have a first length and a second length and may be configured to be interposed as an in-fiber device between the delivery fiber and the process head to provide the desired adjustability of the beam characteristics. To enable adjustment of the beam, a perturbation device and/or assembly is disposed in close proximity to and/or coupled with the VBC fiber and is responsible for perturbing the beam in a first length such that the beam's characteristics are altered in the first length of fiber, and the altered characteristics are preserved or further altered as the beam propagates in the second length of fiber. The perturbed beam is launched into a second length of the VBC fiber configured to conserve adjusted beam characteristics. The first and second lengths of fiber may be the same or different fibers and/or the second length of fiber may comprise a confinement fiber. The beam characteristics that are conserved by the second length of VBC fiber may include any of: beam diameter, beam divergence distribution, BPP, intensity distribution, luminance, M2 factor, NA, optical intensity, power density, radial beam position, radiance, spot size, or the like, or any combination thereof.
A perturbation device 110 is disposed proximal to and/or envelops perturbation region 106. Perturbation device 110 may be a device, assembly, in-fiber structure, and/or other feature. Perturbation device 110 at least perturbs optical beam 102 in first length of fiber 104 or second length of fiber 108 or a combination thereof in order to adjust one or more beam characteristics of optical beam 102. Adjustment of beam 102 responsive to perturbation by perturbation device 110 may occur in first length of fiber 104 or second length of fiber 108 or a combination thereof. Perturbation region 106 may extend over various widths and may or may not extend into a portion of second length of fiber 108. As beam 102 propagates in VBC fiber 100, perturbation device 110 may physically act on VBC fiber 100 to perturb the fiber and adjust the characteristics of beam 102. Alternatively, perturbation device 110 may act directly on beam 102 to alter its beam characteristics. Subsequent to being adjusted, perturbed beam 112 has different beam characteristics than beam 102, which will be fully or partially conserved in second length of fiber 108. In another example, perturbation device 110 need not be disposed near a splice. Moreover, a splice may not be needed at all, for example VBC fiber 100 may be a single fiber, first length of fiber and second length of fiber could be spaced apart, or secured with a small gap (air-spaced or filled with an optical material, such as optical cement or an index-matching material).
Perturbed beam 112 is launched into second length of fiber 108, where perturbed beam 112 characteristics are largely maintained or continue to evolve as perturbed beam 112 propagates yielding the adjusted beam characteristics at the output of second length of fiber 108. In one example, the new beam characteristics may include an adjusted intensity distribution. In an example, an altered beam intensity distribution will be conserved in various structurally bounded confinement regions of second length of fiber 108. Thus, the beam intensity distribution may be tuned to a desired beam intensity distribution optimized for a particular laser processing task. In general, the intensity distribution of perturbed beam 112 will evolve as it propagates in the second length of fiber 108 to fill the confinement region(s) into which perturbed beam 112 is launched responsive to conditions in first length of fiber 104 and perturbation caused by perturbation device 110. In addition, the angular distribution may evolve as the beam propagates in the second fiber, depending on launch conditions and fiber characteristics. In general, fibers largely preserve the input divergence distribution, but the distribution can be broadened if the input divergence distribution is narrow and/or if the fiber has irregularities or deliberate features that perturb the divergence distribution. The various confinement regions, perturbations, and fiber features of second length of fiber 108 are described in greater detail below. Beams 102 and 112 are conceptual abstractions intended to illustrate how a beam may propagate through a VBC fiber 100 for providing variable beam characteristics and are not intended to closely model the behavior of a particular optical beam.
VBC fiber 100 may be manufactured by a variety of methods including PCVD (Plasma Chemical Vapor Deposition), OVD (Outside Vapor Deposition), VAD (Vapor Axial Deposition), MOCVD (Metal-Organic Chemical Vapor Deposition) and/or DND (Direct Nanoparticle Deposition). VBC fiber 100 may comprise a variety of materials. For example, VBC fiber 100 may comprise SiO2, SiO2 doped with GeO2, germanosilicate, phosphorus pentoxide, phosphosilicate, Al2O3, aluminosilicate, or the like or any combinations thereof. Confinement regions may be bounded by cladding doped with fluorine, boron, or the like or any combinations thereof. Other dopants may be added to active fibers, including rare-earth ions such as Er3+ (erbium), Yb3+ (ytterbium), Nd3+ (neodymium), Tm3+ (thulium), Ho3+ (holmium), or the like or any combination thereof. Confinement regions may be bounded by cladding having a lower index than the confinement region with fluorine or boron doping. Alternatively, VBC fiber 100 may comprise photonic crystal fibers or micro-structured fibers.
VBC fiber 100 is suitable for use in any of a variety of fiber, fiber optic, or fiber laser devices, including continuous wave and pulsed fiber lasers, disk lasers, solid state lasers, or diode lasers (pulse rate unlimited except by physical constraints). Furthermore, implementations in a planar waveguide or other types of waveguides and not just fibers are within the scope of the claimed technology.
In an example, first length of fiber 204 has a parabolic-index RIP 212 as indicated by the left RIP graph. Most of the intensity distribution of beam 202 is concentrated in the center of fiber 204 when fiber 204 is straight or nearly straight. Second length of fiber 208 is a confinement fiber having RIP 214 as shown in the right RIP graph. Second length of fiber 208 includes confinement regions 216, 218 and 220. Confinement region 216 is a central core surrounded by two annular (or ring-shaped) confinement regions 218 and 220. Layers 222 and 224 are structural barriers of lower index material between confinement regions (216, 218 and 220), commonly referred to as “cladding” regions. In one example, layers 222 and 224 may comprise rings of fluorosilicate; in some embodiments, the fluorosilicate cladding layers are relatively thin. Other materials may be used as well and claimed subject matter is not limited in this regard.
In an example, as beam 202 propagates along VBC fiber 200, perturbation assembly 210 may physically act on fiber 208 and/or beam 202 to adjust its beam characteristics and generate adjusted beam 226. In the current example, the intensity distribution of beam 202 is modified by perturbation assembly 210. Subsequent to adjustment of beam 202 the intensity distribution of adjusted beam 226 may be concentrated in outer confinement regions 218 and 220 with relatively little intensity in the central confinement region 216. Because each of confinement regions 216, 218, and/or 220 is isolated by the thin layers of lower index material in barrier layers 222 and 224, second length of fiber 208 can substantially maintain the adjusted intensity distribution of adjusted beam 226. The beam will typically become distributed azimuthally within a given confinement region but will not transition (significantly) between the confinement regions as it propagates along the second length of fiber 208. Thus, the adjusted beam characteristics of adjusted beam 226 are largely conserved within the isolated confinement regions 216, 218, and/or 220. In some cases, it be may desirable to have the beam 226 power divided among the confinement regions 216, 218, and/or 220 rather than concentrated in a single region, and this condition may be achieved by generating an appropriately adjusted beam 226.
In one example, core confinement region 216 and annular confinement regions 218 and 220 may be composed of fused silica glass, and cladding 222 and 224 defining the confinement regions may be composed of fluorosilicate glass. Other materials may be used to form the various confinement regions (216, 218 and 220), including germanosilicate, phosphosilicate, aluminosilicate, or the like, or a combination thereof and claimed subject matter is not so limited. Other materials may be used to form the barrier rings (222 and 224), including fused silica, borosilicate, or the like or a combination thereof, and claimed subject matter is not so limited. In other embodiments, the optical fibers or waveguides include or are composed of various polymers or plastics or crystalline materials. Generally, the core confinement regions have refractive indices that are greater than the refractive indices of adjacent barrier/cladding regions.
In some examples, it may be desirable to increase a number of confinement regions in a second length of fiber to increase granularity of beam control over beam displacements for fine-tuning a beam profile. For example, confinement regions may be configured to provide stepwise beam displacement.
Maintaining the bend radius of the fibers across junction 206 ensures that the adjusted beam characteristics such as radial beam position and radiance profile of optical beam 202 will not return to beam 202's unperturbed state before being launched into second length of fiber 208. Moreover, the adjusted radial beam characteristics, including position, divergence angle, and/or intensity distribution, of adjusted beam 226 can be varied based on an extent of decrease in the bend radius and/or the extent of the bent length of VBC fiber 200. Thus, specific beam characteristics may be obtained using this method.
In the current example, first length of fiber 204 having first RIP 212 is spliced at junction 206 to a second length of fiber 208 having a second RIP 214. However, it is possible to use a single fiber having a single RIP formed to enable perturbation (e.g., by micro-bending) of the beam characteristics of beam 202 and also to enable conservation of the adjusted beam. Such a RIP may be similar to the RIPs shown in fibers illustrated in
In an example, if VBC fiber 200 is straightened, LP01 mode will shift back toward the center of the fiber. Thus, the purpose of second length of fiber 208 is to “trap” or confine the adjusted intensity distribution of the beam in a confinement region that is displaced from the center of the VBC fiber 200. The splice between fibers 204 and 208 is included in the bent region, thus the shifted mode profile will be preferentially launched into one of the ring-shaped confinement regions 218 and 220 or be distributed among the confinement regions.
In an example, second length of fiber 208 confinement region 216 has a 100 micron diameter, confinement region 218 is between 120 micron and 200 micron in diameter, and confinement region 220 is between 220 micron and 300 micron diameter. Confinement regions 216, 218, and 220 are separated by 10 um thick rings of fluorosilicate, providing an NA of 0.22 for the confinement regions. Other inner and outer diameters for the confinement regions, thicknesses of the rings separating the confinement regions, NA values for the confinement regions, and numbers of confinement regions may be employed.
Referring again to
It is clear from
In a typical materials processing system (e.g., a cutting or welding tool), the output of the process fiber is imaged at or near the work piece by the process head. Varying the intensity distribution as shown in
In
Despite excitation of the confinement regions from one side at the splice junction 206, the intensity distributions are nearly symmetric azimuthally because of scrambling within confinement regions as the beam propagates within the VBC fiber 200. Although the beam will typically scramble azimuthally as it propagates, various structures or perturbations (e.g., coils) could be included to facilitate this process.
For the fiber parameters used in the experiment shown in
The results shown in
Different fiber parameters than those shown in
In
Similarly,
As noted previously, the divergence angle of a beam may be conserved or adjusted and then conserved in the second length of fiber. There are a variety of methods to change the divergence angle of a beam. The following are examples of fibers configured to enable adjustment of the divergence angle of a beam propagating from a first length of fiber to a second length of fiber in a fiber assembly for varying beam characteristics. However, these are merely examples and not an exhaustive recitation of the variety of methods that may be used to enable adjustment of divergence of a beam. Thus, claimed subject matter is not limited to the examples provided herein.
In laser system 2200, one or more of the free-space optics of assembly 2208 may be disposed in an FFC or other beam coupler 2216 to perform a variety of optical manipulations of an adjusted beam 2214 (represented in
Alternatively, as illustrated in
In an example, beam switch 2332 includes one or more sets of free-space optics 2308, 2316, and 2318 configured to perform a variety of optical manipulations of adjusted beam 2314. Free-space optics 2308, 2316, and 2318 may preserve or vary adjusted beam characteristics of beam 2314. Thus, adjusted beam 2314 may be maintained by the free-space optics or adjusted further. Process fibers 2304, 2320, and 2322 may have the same or a different RIP as VBC delivery fiber 2340, depending on whether it is desirable to preserve or further modify a beam passing from the free-space optics assemblies 2308, 2316, and 2318 to respective process fibers 2304, 2320, and 2322. In other examples, one or more beam portions of beam 2310 are coupled to a workpiece without adjustment, or different beam portions are coupled to respective VBC fiber assemblies so that beam portions associated with a plurality of beam characteristics can be provided for simultaneous workpiece processing. Alternatively, beam 2310 can be switched to one or more of a set of VBC fiber assemblies.
Routing adjusted beam 2314 through any of free-space optics assemblies 2308, 2316, and 2318 enables delivery of a variety of additionally adjusted beams to process heads 2306, 2324, and 2326. Therefore, laser system 2300 provides additional degrees of freedom for varying the characteristics of a beam, as well as switching the beam between process heads (“time sharing”) and/or delivering the beam to multiple process heads simultaneously (“power sharing”).
For example, free-space optics in beam switch 2332 may direct adjusted beam 2314 to free-space optics assembly 2316 configured to preserve the adjusted characteristics of beam 2314. Process fiber 2304 may have the same RIP as VBC delivery fiber 2340. Thus, the beam delivered to process head 2306 will be a preserved adjusted beam 2314.
In another example, beam switch 2332 may direct adjusted beam 2314 to free-space optics assembly 2318 configured to preserve the adjusted characteristics of adjusted beam 2314. Process fiber 2320 may have a different RIP than VBC delivery fiber 2340 and may be configured with divergence altering structures as described with respect to
Process fibers 2304, 2320, and/or 2322 may comprise a RIP similar to any of the second lengths of fiber described above, including confinement regions or a wide variety of other RIPs, and claimed subject matter is not limited in this regard.
In yet another example, free-space optics switch 2332 may direct adjusted beam 2314 to free-space optics assembly 2308 configured to change the beam characteristics of adjusted beam 2314. Process fiber 2322 may have a different RIP than VBC delivery fiber 2340 and may be configured to preserve (or alternatively further modify) the new further adjusted characteristics of beam 2314. Thus, the beam delivered to process head 2326 will be a twice adjusted beam 2330 having different beam characteristics (due to the adjusted divergence profile and/or intensity profile) than adjusted beam 2314.
In
Mandrel 2402 may be used to perturb VBC fiber 200 by providing a form about which VBC fiber 200 may be bent. As discussed above, reducing the bend radius of VBC fiber 200 moves the intensity distribution of the beam radially outward. In some examples, mandrel 2402 may be stepped or conically shaped to provide discrete bend radii levels. Alternatively, mandrel 2402 may comprise a cone shape without steps to provide continuous bend radii for more granular control of the bend radius. The radius of curvature of mandrel 2402 may be constant (e.g., a cylindrical form) or non-constant (e.g., an oval-shaped form). Similarly, flexible tubing 2406, clamps 2416 (or other varieties of fasteners), or rollers 250 may be used to guide and control the bending of VBC fiber 200 about mandrel 2402. Furthermore, changing the length over which the fiber is bent at a particular bend radius also may modify the intensity distribution of the beam. VBC fiber 200 and mandrel 2402 may be configured to change the intensity distribution within the first fiber predictably (e.g., in proportion to the length over which the fiber is bent and/or the bend radius). Rollers 250 may move up and down along a track 2442 on platform 2434 to change the bend radius of VBC fiber 200.
Clamps 2416 (or other fasteners) may be used to guide and control the bending of VBC fiber 200 with or without a mandrel 2402. Clamps 2416 may move up and down along a track 2442 or platform 2446. Clamps 2416 may also swivel to change bend radius, tension, or direction of VBC fiber 200. Controller 2448 may control the movement of clamps 2416.
In another example, perturbation device 110 may be flexible tubing 2406 and may guide bending of VBC fiber 200 with or without a mandrel 2402. Flexible tubing 2406 may encase VBC fiber 200. Tubing 2406 may be made of a variety of materials and may be manipulated using piezoelectric transducers controlled by controller 2444. In another example, clamps or other fasteners may be used to move flexible tubing 2406.
Micro-bend 2404 in VBC fiber is a local perturbation caused by lateral mechanical stress on the fiber. Micro-bending can cause mode coupling and/or transitions from one confinement region to another confinement region within a fiber, resulting in varied beam characteristics of the beam propagating in a VBC fiber 200. Mechanical stress may be applied by an actuator 2436 that is controlled by controller 2440. However, this is merely an example of a method for inducing mechanical stress in fiber 200 and claimed subject matter is not limited in this regard.
Acousto-optic transducer (AOT) 2408 may be used to induce perturbation of a beam propagating in the VBC fiber using an acoustic wave. The perturbation is caused by the modification of the refractive index of the fiber by the oscillating mechanical pressure of an acoustic wave. The period and strength of the acoustic wave are related to the acoustic wave frequency and amplitude, allowing dynamic control of the acoustic perturbation. Thus, a perturbation assembly 110 including AOT 2408 may be configured to vary the beam characteristics of a beam propagating in the fiber. In an example, piezo-electric transducer 2418 may create the acoustic wave and may be controlled by controller or driver 2420. The acoustic wave induced in AOT 2408 may be modulated to change and/or control the beam characteristics of the optical beam in VBC 200 in real-time. However, this is merely an example of a method for creating and controlling an AOT 2408 and claimed subject matter is not limited in this regard.
Thermal device 2410 may be used to induce perturbation of a beam propagating in VBC fiber using heat. The perturbation is caused by the modification of the RIP of the fiber induced by heat. Perturbation may be dynamically controlled by controlling an amount of heat transferred to the fiber and the length over which the heat is applied. Thus, a perturbation assembly 110 including thermal device 2410 may be configured to vary a range of beam characteristics. Thermal device 2410 may be controlled by controller 2450.
Piezo-electric transducer 2412 may be used to induce perturbation of a beam propagating in a VBC fiber using piezoelectric action. The perturbation is caused by the modification of the RIP of the fiber induced by a piezoelectric material attached to the fiber. The piezoelectric material in the form of a jacket around the bare fiber may apply tension or compression to the fiber, modifying its refractive index via the resulting changes in density. Perturbation may be dynamically controlled by controlling a voltage to the piezo-electric device 2412. Thus, a perturbation assembly 110 including piezo-electric transducer 2412 may be configured to vary the beam characteristics over a particular range.
In an example, piezo-electric transducer 2412 may be configured to displace VBC fiber 200 in a variety of directions (e.g., axially, radially, and/or laterally) depending on a variety of factors, including how the piezo-electric transducer 2412 is attached to VBC fiber 200, the direction of the polarization of the piezo-electric materials, the applied voltage, etc. Additionally, bending of VBC fiber 200 is possible using the piezo-electric transducer 2412. For example, driving a length of piezo-electric material having multiple segments comprising opposing electrodes can cause a piezoelectric transducer 2412 to bend in a lateral direction. Voltage applied to piezoelectric transducer 2412 by electrode 2424 may be controlled by controller 2422 to control displacement of VBC fiber 200. Displacement may be modulated to change and/or control the beam characteristics of the optical beam in VBC 200 in real-time. However, this is merely an example of a method of controlling displacement of a VBC fiber 200 using a piezo-electric transducer 2412 and claimed subject matter is not limited in this regard.
Gratings 2414 may be used to induce perturbation of a beam propagating in a VBC fiber 200. A grating 2414 can be written into a fiber by inscribing a periodic variation of the refractive index into the core. Gratings 2414 such as fiber Bragg gratings can operate as optical filters or as reflectors. A long-period grating can induce transitions among co-propagating fiber modes. The radiance, intensity profile, and/or divergence profile of a beam comprised of one or more modes can thus be adjusted using a long-period grating to couple one or more of the original modes to one or more different modes having different radiance and/or divergence profiles. Adjustment is achieved by varying the periodicity or amplitude of the refractive index grating. Methods such as varying the temperature, bend radius, and/or length (e.g., stretching) of the fiber Bragg grating can be used for such adjustment. VBC fiber 200 having gratings 2414 may be coupled to stage 2426. Stage 2426 may be configured to execute any of a variety of functions and may be controlled by controller 2428. For example, stage 2426 may be coupled to VBC fiber 200 with fasteners 2430 and may be configured to stretch and/or bend VBC fiber 200 using fasteners 2430 for leverage. Stage 2426 may have an embedded thermal device and may change the temperature of VBC fiber 200.
Fabrication of Electronic Devices
An embodiment of the present disclosure is directed to a method of tailoring beam characteristics of a laser beam during fabrication of an electronic device. The method includes providing a substrate comprising one or more layers. One or more characteristics of a laser beam are adjusted. The laser beam having the adjusted beam characteristics is impinged on the substrate to carry out at least one process step for fabricating the electronic device. The adjusting of the laser beam can include any of the techniques for adjusting laser beam characteristics, as described herein. In an embodiment, adjusting the laser beam comprises: (i) perturbing the laser beam propagating within a first length of fiber to adjust the one or more beam characteristics of the laser beam in the first length of fiber or a second length of fiber or a combination thereof, the second length of fiber having two or more confinement regions; (ii) coupling the perturbed laser beam into the second length of fiber; and (iii) emitting the laser beam having the adjusted beam characteristics from the second length of fiber.
The substrate employed can be any substrate that is known or hereafter developed for use in an electronic device. In an embodiment, the substrate is a free-standing substrate suitable for providing mechanical support for the electronic device during fabrication, and may or may not be removed during the fabrication process. Examples of suitable substrates include semiconductor substrates, insulating substrates and so forth. Examples of semiconductor substrates include substrates comprising a Group IV semiconductor (e.g., single crystalline silicon, germanium and so forth), or compound semiconductors, such as Group III-V semiconductors (e.g., GaAs, InGaAs, InGaN, InGaAsP, and so forth). Examples of insulating substrates include glass substrates, polymer substrates and ceramic substrates.
The substrate can comprise one or more layers. For instance, the substrate can comprise a single layer of semiconductor material, glass, or any of the substrate materials listed herein. Alternatively, additional layers can be included as part of the substrate. Such layers can be deposited during the fabrication process of a microelectronics device in any suitable manner, such as by chemical vapor deposition techniques, liquid deposition techniques, growth techniques such as thermal oxidation or nitridation, electroplating, bonding, or any other type of deposition process. The one or more layers can comprise materials chosen from electrical conductors, such as metals, conductive polymers or semiconductors doped so as to be electrically conductive; electrical insulators, such as silicon oxides, silicon nitrides, silicon oxynitrides, ceramics, insulating polymers (e.g., plastics, polyimides and so forth); semiconductors, including amorphous, polycrystalline or single crystalline semiconductors, semiconducting polymers; and any combination of these materials. Example resistivities for conductors can range from about 1×10−4 Ω·m to about 1×10−9 Ω·m at 20° C., or any lower resistivity, while resistivities for electrical insulators can range from about 1×103 Ω·m to about 1×1025 Ω·m at 20° C., or any higher resistivity. Resistivities for semiconductors can be any suitable value, and may range, for example, from about 1×10−4 Ω·m to about 1×103 Ω·m.
A laser beam having an adjusted beam characteristic is impinged on the substrate to carry out the at least one process step for fabricating the electronic device. During the processing, the laser beam can be moved relative to the substrate in any suitable manner, such as by holding the substrate in a fixed position and employing a scanning system to position the laser, or by using a fixed laser beam and moving the substrate with respect to the beam, or any combination thereof, such as by moving both the substrate and the laser relative to each other.
The at least one process step can be any laser processing step(s) known or hereafter developed for use in electronics fabrication. In an embodiment, the at least one process step comprises selectively removing a portion of the one or more layers. For example, the at least one process step can comprise drilling a first via in the one or more layers. In an embodiment, the one or more layers comprise a first layer and a second layer, the second layer comprising a different material than the first layer.
In an embodiment, the at least one process step comprises removing a portion of one layer and employing a second layer as a stop layer. In such a process, the adjusting of the one or more characteristics can be carried out to improve the laser beam selectivity for removing the portion of the first layer from the second layer compared to the laser beam selectivity prior to the adjusting of the one or more characteristics. An example of a device formed by this process is the printed circuit board (“PCB”) 3040 of
An embodiment of the present disclosure can comprise drilling a first via and a second via, where the first via has a first width and the second via has a second width that is different than the first width.
In an embodiment, the drilling of a via comprises trepanning. As is known in the art, trepanning comprises laser drilling a hole, such as by percussion laser drilling, in at least one of the one or more layers and then expanding the size (e.g., width) of the hole by scanning the laser relative to the substrate, usually in a spiral type motion around the edge of the hole. For example,
An alternative method of drilling a via hole can include laser drilling a hole, such as by percussion laser drilling, in at least one of the one or more layers and then expanding the size (e.g., width) of the hole by adjusting the beam diameter without scanning the laser relative to the substrate 3164. For example, the first step of this process can be drilling the hole 3162a having a width, w1, that results from percussion drilling with the laser beam 2911. Following the initial drilling of hole 3162a, the beam diameter and/or divergence distribution of the laser beam 2911 can be adjusted to increase the width of the hole. The resulting hole 3162b has a width w2 that is larger than the width, w1, as shown in
The laser techniques of the present application can be employed to selectively remove any portion of a layer, thereby patterning the layer. For instance, portions of an insulating layer over a contact region can be removed to allow electrical contact to be made. In an embodiment, an at least one process step comprises removing a portion of one or more insulating layers (e.g., polymer layers or any of the other insulating layers described herein) from a contact region, where the metal layers (e.g., copper layer, aluminum layer, or any of the other layers described herein, or combinations thereof) may be employed as stop layers. In such a process, the adjusting of the one or more characteristics can be carried out to improve the laser beam selectivity for removing the portion of the insulating layer from the metal contact region compared to the laser beam selectivity prior to the adjusting of the one or more characteristics. An example of a device formed by this process is the flex circuit 3280 of
In an embodiment, the at least one process step comprises scribing the substrate to have a scribe line. Scribing is generally well known in the art as a step carried out as part of the dicing process for semiconductor wafers.
Tailoring (e.g., optimizing) of the beam for forming different scribe line widths or depths could be accomplished for example, by adjusting the beam to have a certain intensity distribution profile, such as any of the beam distribution profiles described herein. For instance, a narrower, high intensity beam distribution, such as that shown in
Tailoring (e.g., optimizing) of the beam for reducing an area of the wafer 70 detrimentally affected by heat during the scribing process can be accomplished for example, by adjusting the beam to have a certain intensity distribution profile, such as any of the beam distribution profiles described herein. For instance, a narrower, high intensity beam distribution, such as that shown in
In an embodiment, the at least one process step comprises annealing at least one of the one or more layers with a laser. The adjusting of the one or more beam characteristics can result in tailoring (e.g., optimizing) of the beam for annealing a single layer or annealing each of a plurality of different layers. For example, the process can comprise depositing an amorphous semiconductor layer and then scanning all or a portion of the semiconductor with a laser, thereby heating the amorphous semiconductor layer sufficiently to crystallize the semiconductor. In the case of silicon, either polycrystalline or single crystalline silicon could be formed. During the annealing, the laser beam can be adjusted to deliver an amount of energy to heat the layer to a desired temperature without removing the amorphous semiconductor. For example, the adjusting of the one or more beam characteristics can result in a modified intensity distribution or divergence distribution, compared to the intensity distribution or divergence distribution that would be used if the same laser were used for drilling a via or otherwise removing the amorphous semiconductor. Any adjustments can be made that result in the beam being tailored (e.g., optimized) for efficiently heating, without removal of the layer material.
In an embodiment, the at least one process step comprises a soldering process, a welding process or a laser deposition process. The soldering process can, for example, include heating solder to join an electrical component to the substrate (e.g., such as attaching a wire or electrical device to a printed circuit board). The welding process can, for example, include welding a component to the substrate. The laser deposition process can, for example, include selectively depositing a layer (e.g., by laser chemical vapor deposition, which is known in the art as LCVD, or by any other laser deposition process) onto the substrate in any desired pattern. Laser processes for soldering, welding and selective deposition are generally well known in the art.
The adjusting of the one or more beam characteristics can result in tailoring (e.g., optimizing) of the beam for the particular soldering, welding or other deposition process. For example, the laser beam can be adjusted to deliver an amount of energy to heat the layer to a desired temperature while reducing hotspots or undesired heat damage to surrounding areas of the substrate, or to increase the efficiency of the process. For example, the adjusting of the one or more beam characteristics can result in increasing or reducing an intensity distribution or increasing or decreasing a divergence distribution, compared to the intensity density or divergence distribution of the beam if the same laser were used without the adjustments made by perturbing the fiber, as discussed herein. For instance, when welding, different materials will absorb heat energy from the laser at different rates. Copper, for example, will reflect laser light and dissipate the lasers energy, while stainless steel more readily absorbs laser energy. Therefore, adjustments can be made to the laser (e.g., adjustments to the intensity profile of the beam, such as those shown in
The adjusting of the beam characteristics can include any beam adjustments described herein. In an embodiment, adjusting the one or more beam characteristics of the laser beam comprises adjusting one or more of a beam diameter, divergence distribution, beam parameter product (BPP), intensity distribution, luminance, M2 value, numerical aperture (NA), optical intensity, power density, radial beam position, radiance or spot size, or any combination thereof. In an embodiment, the adjusting the one or more beam characteristics of the laser beam comprises adjusting a beam parameter product of the laser beam. In an embodiment, the adjusting the one or more beam characteristics of the laser beam comprises adjusting one or more of a divergence distribution or an intensity distribution, or a combination thereof.
As described herein, the adjusting of the one or more beam characteristics can be carried out either with or without using free-space optics. In addition to the adjustments made using the fiber perturbation techniques described herein, other adjustments can also be made to the laser beam, including adjustments to laser power, adjustments to the beam using free-space optics (if employed) and so forth.
The processes of the present disclosure can be employed for fabricating any known or hereafter developed electronic device. In an embodiment, the electronic device is an integrated circuit, semiconductor device, a microcircuit, a printed circuit board, a flex circuit, a micromachine, a display screen (e.g., touch screen, liquid crystal display, light emitting diode display and so forth) or a photovoltaic cell.
In an embodiment, the adjusting of the one or more beam characteristics of the laser beam prior to or during the micro-electronics fabrication process comprises perturbing an optical beam propagating within a first length of fiber to adjust one or more of the beam characteristics of the laser beam in the first length of fiber or a second length of fiber or a combination thereof. As described herein, the perturbed optical beam is coupled into the second length of fiber. At least a portion of one or more adjusted beam characteristics is maintained within the second length of fiber. The first length of fiber and the second length of fiber have different refractive index profiles (RIPs).
Any of the fiber designs described herein can be employed in the electronic device fabrication processes of the present disclosure. In an example, the second length of fiber can be azimuthally asymmetric, such as the fibers in
Having described and illustrated the general and specific principles of examples of the presently disclosed technology, it should be apparent that the examples may be modified in arrangement and detail without departing from such principles. We claim all modifications and variation coming within the spirit and scope of the following claims.
This application is a continuation-in-part of international application PCT/US2017/034848, filed May 26, 2017, which claims the benefit of U.S. Provisional Application No. 62/401,650, filed Sep. 29, 2016. This application is a continuation-in-part of U.S. patent application Ser. No. 15/607,411, filed May 26, 2017, which claims the benefit of U.S. Provisional Application No. 62/401,650, filed Sep. 29, 2016. This application is a continuation-in-part of U.S. patent application Ser. No. 15/607,410, filed May 26, 2017, which claims the benefit of U.S. Provisional Application No. 62/401,650, filed Sep. 29, 2016. This application is a continuation-in-part of U.S. patent application Ser. No. 15/607,399, filed May 26, 2017, which claims the benefit of U.S. Provisional Application No. 62/401,650, filed Sep. 29, 2016. All of the above applications are herein incorporated by reference in their entireties.
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Number | Date | Country | |
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20180284490 A1 | Oct 2018 | US |
Number | Date | Country | |
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62401650 | Sep 2016 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 15607411 | May 2017 | US |
Child | 15934714 | US | |
Parent | 15607399 | May 2017 | US |
Child | 15607411 | US | |
Parent | 15607410 | May 2017 | US |
Child | 15607399 | US | |
Parent | PCT/US2017/034848 | May 2017 | US |
Child | 15607410 | US |