This invention relates to the field of heat exchangers. More specifically, this invention relates to micro-channel structures used in a heat exchanger for carrying heat-absorbing fluids.
Heat sinks are an important component in many devices, particularly in semiconductor devices, where smaller device-geometries in more powerful circuits generate more heat in a smaller area. Overheated components often fail and must be replaced, an expensive and time-consuming process.
Many heat sinks contain channels that span the entire length of a heat-generating device. These heat sinks suffer from several drawbacks. For example, these heat sinks do not allow heat-absorbing materials to be concentrated in a specific area. These heat sinks also suffer from pressure drops along the length of the channels, preventing a uniform flow of a cooling material along the channel. Also, because the channels span a relatively long distance, after they absorb heat along a first section of the channel, they are less able to absorb heat along later sections of the channel. The heat-absorbing ability of the cooling material circulating along the channel is thus diminished, and the heat-generating device is not sufficiently cooled.
Accordingly, there is a need for a structure and method of circulating a cooling material within a heat exchanger to overcome these and other disadvantages when cooling a heat-generating device.
A heat exchanger provides vertically stacked multichannels, which together effectively draw heat away from a heat-generating device. The vertically stacked multichannels allow substantially uniform pressure flows within the channels and allow the flow of cooling materials to be accurately concentrated over specific areas.
In a first aspect of the present invention, a heat exchanger comprises a manifold layer and an interface layer. The manifold layer has a first plurality of openings for providing a cooling material to the heat exchanger and a second plurality of openings for removing the cooling material (e.g., liquid or vapor) from the heat exchanger. The interface layer is coupled to the manifold layer and has a plurality of routes that each extends from one of the first plurality of openings and terminates at a corresponding one of the second plurality of openings. The routes are used to carry the cooling material. The plurality of routes are substantially contained in a plane non-parallel, preferably substantially perpendicular, to a heat-exchanging plane. Preferably, each route is adjacent to another route, whereby heat can be exchanged between cooling material circulating within adjacent routes. In one embodiment, each route extends from one of the first plurality of openings toward the heat-exchanging plane and then turns to extend away from the heat-exchanging plane toward a corresponding one of the second plurality of openings. Preferably, each route is substantially U shaped. In another embodiment, after a route extends from one of the first plurality of openings and before the route extends toward one of the second plurality of openings, the route extends substantially parallel to the heat-exchanging plane. In another embodiment, the interface layer comprises a structural material having a thermal conductivity of at least approximately 20 W/m-K. Preferably, the structural material comprises a semiconductor. Alternatively, the structural material comprises a metal, a porous material that defines the plurality of routes, such as a porous metal or a silicon foam, or a composite of materials. The cooling material typically comprises a liquid but could also comprise one or more gases (e.g. air), vapor, or a combination of one or more liquids, gases, and vapors. Preferably, the liquid comprises water. In another embodiment, the first plurality of openings and the second plurality of openings lie substantially in a single plane.
In another embodiment, the heat exchanger further comprises a heat insulator between the first plurality of openings and the second plurality of openings. Preferably, the heat insulator comprises an air gap. Alternatively, the heat insulator can comprise a vacuum gap or any thermally-insulating material having a thermal conductivity of approximately 5 W/m-K or less. In another embodiment, a cross-sectional dimension of a route, such as an area, changes as it extends from one of the first plurality of openings to a corresponding one of the second plurality of openings. Preferably, a cross-sectional dimension of a route increases uniformly as it extends from one of the first plurality of openings to one of a second plurality of openings.
In another embodiment, the heat exchanger further comprises a heat-generating device coupled to a bottom surface of the interface layer. In another embodiment, the heat-generating device is formed integrally with the bottom surface of the interface layer. Preferably, the heat-generating device is a semiconductor device. In another embodiment, each route comprises a channel. In another embodiment, the plurality of routes is defined by a plurality of pin fins. Preferably, the plurality of pin fins are positioned crosswise to the plurality of routes. In another embodiment, the heat exchanger further comprises a pump coupled to the first plurality of openings. In another embodiment, the manifold layer and the interface layer form a monolithic device.
In a second aspect of the present invention, a method of forming a heat exchanger comprises forming a manifold layer having a first plurality of openings for providing a cooling material to the heat exchanger and a second plurality of openings for removing the cooling material from the heat exchanger, and forming an interface layer coupled to the manifold layer. The interface layer has a plurality of routes that each extends from one of the first plurality of openings and terminates at a corresponding one of the second plurality of openings. Each route is used to carry the cooling material. The plurality of routes are substantially contained in a plane non-parallel, preferably substantially perpendicular, to a heat-exchanging plane. In one embodiment, each route is adjacent to another route. In another embodiment, each route extends from one of the first plurality of openings toward the heat-exchanging plane and then turns to extend away from the heat-exchanging plane toward a corresponding one of the second plurality of openings. Preferably, each route is substantially U shaped. In another embodiment, after a route extends from one of the first plurality of openings and before the route extends toward one of the second plurality of openings, the route extends substantially parallel to the heat-exchanging plane.
In one embodiment, the interface layer comprises a structural material having a thermal conductivity of at least approximately 20 W/m-K. Preferably, the structural material comprises a semiconductor. In another embodiment, the interface layer comprises a structural material that exhibits anisotropic etching. Preferably, the structural material that exhibits anisotropic etching is selected from the group consisting of micro-scale copper tubing and copper filaments. Alternatively, the structural material comprises a metal, a porous material that defines the plurality of routes, such as a porous metal or a silicon foam, or a composite of materials. In another embodiment, the first plurality of openings and the second plurality of openings lie substantially in a single plane.
In another embodiment, the method further comprises forming a heat insulator between the first plurality of openings and the second plurality of openings. Preferably, the heat insulator comprises an air gap. Alternatively, the heat insulator can comprise a vacuum gap or any thermally-insulating material having a thermal conductivity of approximately 5 W/m-K or less. In another embodiment, a cross-sectional dimension of a route changes as it extends from one of the first plurality of openings to a corresponding one of the second plurality of openings. Preferably, a cross-sectional dimension of a route increases uniformly as it extends from one of the first plurality of openings to a corresponding one of a second plurality of openings.
In another embodiment, the method further comprises coupling a heat-generating device to a bottom surface of the interface layer. In another embodiment, the method comprises integrally forming the heat-generating device to the bottom surface of the interface layer. Preferably, the heat-generating device is a semiconductor device. In another embodiment, each route comprises a channel. In another embodiment, each route is defined by a plurality of pin fins. Preferably, the pin fins are positioned crosswise to the plurality of routes. In another embodiment, the manifold layer and the interface layer form a monolithic device. In another embodiment, the step of forming an interface layer comprises patterning a semiconductor device and etching the patterned semiconductor device to form the interface layer. In another embodiment, the step of forming the interface layer comprises stamping a thin sheet of metal. In another embodiment, the step of forming the interface layer comprises molding a material in the form of the interface layer, such as molding a metal using metal injection molding (MIM) or plastic injection molding to form the interface layer.
In a third aspect of the present invention, a method of cooling a device comprises transmitting a cooling material from an inlet manifold, through a plurality of stacked routes positioned over the device, and to an outlet manifold. In one embodiment, the stacked routes comprise a structural material having a thermal conductivity of at least approximately 20 W/m-K. Preferably, the structural material comprises a semiconductor. In other embodiments, the structural material comprises a metal or a porous material such as a porous metal or a silicon foam. In another embodiment, the plurality of stacked routes comprise pin fins. In another embodiment, the cooling material comprises water. Alternatively, the cooling material comprises one or more gases (e.g., air), vapors, or any combination of liquids, gases, and vapors.
The manifold layer 101 comprises a plurality of openings 105, 110, and 115 and heat insulators 155 and 160, described in more detail below. It will be appreciated that the heat insulators 155 and 160 are not required to practice the present invention. The interface layer 150 comprises a plurality of channels 105A, 105B, 105C, 115A, 115B, 115C, 160A, 160B, and 160C, as well as the heat insulators 155 and 160. The insulators 155 and 160 thus extend from and form part of both the manifold layer 101 and the interface layer 150. As illustrated in
Other structures for manifold layers are taught, for example, in co-pending U.S. patent application Ser. No. 10/439,635, filed on May 16, 2003, and titled “Method and Apparatus for Flexible Fluid Delivery for Cooling Desired Hot Spots in a Heat Producing Device,” which is hereby incorporated by reference.
As illustrated in
The channels 115A, 115B, and 115C each has one end coupled to the opening 115 and another end coupled to the opening 110. Each of the channels 115A–C extends from the opening 110, toward the bottom plane 150A, turns, extends substantially parallel to the bottom plane 150A, turns away from the bottom plane 150A, and then extends to the opening 110, terminating at the opening 110. Thus, each of the channels 115A–C has an elongated elbow or U-shape.
Finally, the channels 160A, 160B, and 160C each has one end coupled to the opening 115 and another end (not shown) coupled to an opening (not shown). In that section of the heat exchanger 100 illustrated in
As described in more detail below and, for example, illustrated in
Similarly, the channel 115A is defined by the ridged fins 152A and 152B, each extending from one side of the spines 202 and 203; the channel 115B is defined by the ridged fins 152B and 152C, each extending from the side of the spines 202 and 203; and the channel 115C is defined by the ridged fins 152C and 152D, each extending from the side of the spines 202 and 203. The channel 160A is defined by the ridged fins 153A and 153B, each extending from one side of the spine 203; the channel 160B is defined by the ridged fins 153B and 153C, each extending from the side of the spine 203; and the channel 160C is defined by the ridged fins 153C and 153D, each extending from the side of the spine 203.
As illustrated in
Referring to
In operation, a heat-generating device 180 is coupled to the interface layer 150, as illustrated in
Still referring to
It will be appreciated that cooling material circulating within the channels 115A–C and 160A–C absorb heat from the heat-generating device 180 in a similar manner. Thus, in the discussions that follow, explanations about the channels 105A–C also apply to the channels 115A–C and 160A–C.
The cooling material in the channels 105A–C are hotter at the end coupled to the opening 110 (the discharge end) than at the end coupled to the opening 105 (the introducing end). The heat insulator 155 is used to insulate the introducing end from the discharge end, ensuring that the cooling material at the discharge end does not pre-heat the cooling material in the introducing end of a channel, thus limiting the amount and rate of the heat absorption by the cooling material. Preferably, the insulators 155 and 160 are air gaps. Alternatively, the insulators 155 and 160 are vacuum gaps, an insulating material, or any structure that insulates the introducing end of a channel, such as the channel 105A, from the discharge end of the channel, so that the cooling material is not pre-heated. Preferably, insulating materials and structures used in accordance with the present invention have a thermal conductivity of approximately 5 W/m-K or less.
It is believed that stacking channels as illustrated by, for example, the channels 105A–C in
In addition, the uniform elongated U-shape depicted in
Heat exchangers in accordance with the present invention can have any number of channels having any combinations of cross-sectional dimensions. In one embodiment, the cross-sectional dimensions of the channels are chosen small enough to maximize the surface-to-volume ratio but large enough to ensure that pressure drops within the channels are small. Also, as discussed below, because channels closest to a heat-exchanging plane absorb more heat than those channels farther from the heat-exchanging plane, channels closer to the heat-exchanging plane can have cross-sectional dimensions larger or smaller than those of channels farther from the heat-exchanging plane, depending on the design preference.
It will be appreciated that the discussions above relating to
In accordance with the present invention, a heat-sink slice (e.g.,
The heat exchanger 300 advantageously allows a cooling material to be routed to selected areas of a heat-generating device coupled to the heat exchanger 300. For example, if a heat-generating device only generates heat below the channels 305A–C, then a cooling material need be introduced only into the inlet manifold 305 above the channels 305A–C and removed from the outlet manifold 310. In this way, the amount of both cooling material and energy used to pump the cooling material is minimized. Similarly, as described below in relation to
For ease of illustration,
It will be appreciated that the components that comprise a heat exchanger can have alternative structures. For example,
A heat exchanger 800 shown in
It will be appreciated that a heat-sink in accordance with the present invention can comprise other path-defining structures having a plurality of stacked routes. For example,
It will be appreciated that a cooling material such as a fluid can travel many paths within the array of pin fins. Thus, the cooling material can travel in vertically stacked paths from the inlet manifold 805 to the outlet manifold 810, for example, using routes other than those depicted in
A heat exchanger in accordance with the present invention can be fabricated in a number of ways. For example, one or more heat-sink slices can be formed from a semiconductor or other material using semiconductor-fabrication techniques. An interface layer of a heat-sink slice can be formed from a semiconductor device that is patterned using photo-lithography and then etched to form the microchannels. Plasma etching, chemical etching, or other types of etching can be performed. Multiple heat-sink slices can then be fused together and diced (if necessary). Heat-sink slices can be bonded together and a manifold layer bonded to form a heat exchanger, such as the heat exchanger 300 of
Similarly, a semiconductor layer can be patterned and etched to form one or more inlet manifolds, one or more outlet manifolds, and an array of projecting fins, as, for example, illustrated in
It will be appreciated that an interface layer in accordance with the present invention can comprise one or more heat-conducting materials such as a semiconductor, molded plastics, materials covered in a metal, porous metals, a silicon foam, or other materials. Preferably, the interface layer comprises a semiconductor such as silicon. The interface layer can also comprise a material that exhibits anisotropic etching so that the interface layer can be fabricated using patterning and anisotropic etching techniques. Materials exhibiting anisotropic etching, which can be used in accordance with the present invention, include, but are not limited to, micro-scale copper tubing and copper filaments. Alternatively, the interface layer can be formed from stamped metal sheets, such as stamped copper sheets, as described below, machined metals, plated metals, and other materials. A manifold layer in accordance with the present invention can be formed from a number of materials including, but not limited to, glass, molded plastics, machined metals, etched metals, or any combination of these materials. Manifold layers can be bonded to interface layers using many techniques including, but not limited to, adhesive bonding, chemical bonding, ultrasonic welding, eutectic bonding, or any combination of these methods.
It will be appreciated that interface layers and manifold layers can be formed and combined in other ways to form vertically stacked channels in accordance with the present invention. For example, channels, manifold inlets, manifold outlets, any array of pin fins, or a combination of these can be formed by stamping a sheet of metal in the shape of the channels, manifold inlets, manifold outlets, or array of pin fins. Alternatively, these structures can be formed using metal injection molding (MIM), plastic injection molding, other forms of molding, or by many other means.
In accordance with the present invention, heat exchangers circulate a cooling material to carry heat from a heat-generating device. Heat exchangers in accordance with the present invention comprise vertically stacked routes containing cooling material used to absorb heat from the heat-generating device and transfer the heat among the vertically-stacked routes, away from the heat-generating device. The routes can have any cross-sectional dimensions configured to carry cooling material to absorb heat from micro devices, such as semiconductor processors, or from larger devices. The cross-sectional dimensions can be configured to fit the application at hand. Such heat exchangers can be used to efficiently cool heat-generating devices such as semiconductor processing devices, motors, light-emitting devices, process chambers, MEMS, and any other devices that generate heat. Many forms of cooling materials can be transmitted through the vertically-stacked channels including, but not limited to, liquids such as water, air, other gases, vapors, refrigerants such as Freon, or any material or combination of materials that can absorb and transport heat efficiently.
The present invention has been described in terms of specific embodiments incorporating details to facilitate the understanding of the principles of construction and operation of the invention. As such, references herein to specific embodiments and details thereof are not intended to limit the scope of the claims appended hereto. It will be apparent to those skilled in the art that modifications can be made to the embodiments chosen for illustration without departing from the spirit and scope of the invention.
This application claims priority under 35 U.S.C. § 119(e) of the co-pending U.S. provisional patent application Ser. No. 60/455,729, filed on Mar. 17, 2003, and titled “Microchannel Heat Exchanger Apparatus with Porous Configuration and Method of Manufacturing Thereof.” The provisional patent application Ser. No. 60/455,729, filed on Mar. 17, 2003, and titled “Microchannel Heat Exchanger Apparatus with Porous Configuration and Method of Manufacturing Thereof” is hereby incorporated by reference.
Number | Name | Date | Kind |
---|---|---|---|
0596062 | Firey | Dec 1897 | A |
2039593 | Hubbuch et al. | May 1936 | A |
2273505 | Florian | Feb 1942 | A |
3361195 | Motto, Jr. et al. | Jan 1968 | A |
3771219 | Tuzi et al. | Nov 1973 | A |
3817321 | von Cube et al. | Jun 1974 | A |
3948316 | Souriau | Apr 1976 | A |
4109707 | Wilson et al. | Aug 1978 | A |
4211208 | Lindner | Jul 1980 | A |
4312012 | Frieser et al. | Jan 1982 | A |
4450472 | Tuckerman et al. | May 1984 | A |
4467861 | Kiseev et al. | Aug 1984 | A |
4485429 | Mittal | Nov 1984 | A |
4494171 | Bland et al. | Jan 1985 | A |
4516632 | Swift et al. | May 1985 | A |
4561040 | Eastman et al. | Dec 1985 | A |
4567505 | Pease et al. | Jan 1986 | A |
4573067 | Tuckerman et al. | Feb 1986 | A |
4574876 | Aid | Mar 1986 | A |
4644385 | Nakanishi et al. | Feb 1987 | A |
4758926 | Herrell et al. | Jul 1988 | A |
4866570 | Porter | Sep 1989 | A |
4868712 | Woodman | Sep 1989 | A |
4893174 | Yamada et al. | Jan 1990 | A |
4894709 | Phillips et al. | Jan 1990 | A |
4896719 | O'Neill et al. | Jan 1990 | A |
4903761 | Cima | Feb 1990 | A |
4908112 | Pace | Mar 1990 | A |
4938280 | Clark | Jul 1990 | A |
5009760 | Zare et al. | Apr 1991 | A |
5016090 | Galyon et al. | May 1991 | A |
5016138 | Woodman | May 1991 | A |
5043797 | Lopes | Aug 1991 | A |
5057908 | Weber | Oct 1991 | A |
5070040 | Pankove | Dec 1991 | A |
5083194 | Bartilson | Jan 1992 | A |
5088005 | Ciaccio | Feb 1992 | A |
5099311 | Bonde et al. | Mar 1992 | A |
5099910 | Walpole et al. | Mar 1992 | A |
5125451 | Matthews | Jun 1992 | A |
5131233 | Cray et al. | Jul 1992 | A |
5145001 | Valenzuela | Sep 1992 | A |
5161089 | Chu et al. | Nov 1992 | A |
5179500 | Koubek et al. | Jan 1993 | A |
5203401 | Hamburgen et al. | Apr 1993 | A |
5218515 | Bernhardt | Jun 1993 | A |
5228502 | Chu et al. | Jul 1993 | A |
5232047 | Matthews | Aug 1993 | A |
5239200 | Messina et al. | Aug 1993 | A |
5239443 | Fahey et al. | Aug 1993 | A |
5263251 | Matthews | Nov 1993 | A |
5265670 | Zingher | Nov 1993 | A |
5269372 | Chu et al. | Dec 1993 | A |
5274920 | Matthews | Jan 1994 | A |
5275237 | Rolfson et al. | Jan 1994 | A |
5309319 | Messina | May 1994 | A |
5310440 | Zingher | May 1994 | A |
5316077 | Reichard | May 1994 | A |
5317805 | Hoopman et al. | Jun 1994 | A |
5325265 | Turlik et al. | Jun 1994 | A |
5346000 | Schlitt | Sep 1994 | A |
5380956 | Loo et al. | Jan 1995 | A |
5383340 | Larson et al. | Jan 1995 | A |
5386143 | Fitch | Jan 1995 | A |
5388635 | Gruber et al. | Feb 1995 | A |
5417280 | Hayashi et al. | May 1995 | A |
5427174 | Lomolino, Sr. et al. | Jun 1995 | A |
5436793 | Sanwo et al. | Jul 1995 | A |
5459099 | Hsu | Oct 1995 | A |
5490117 | Oda et al. | Feb 1996 | A |
5508234 | Dusablon, Sr. et al. | Apr 1996 | A |
5514832 | Dusablon, Sr. et al. | May 1996 | A |
5514906 | Love et al. | May 1996 | A |
5544696 | Leland | Aug 1996 | A |
5548605 | Benett et al. | Aug 1996 | A |
5564497 | Fukuoka et al. | Oct 1996 | A |
5575929 | Yu et al. | Nov 1996 | A |
5585069 | Zanzucchi et al. | Dec 1996 | A |
5641400 | Kaltenbach et al. | Jun 1997 | A |
5658831 | Layton et al. | Aug 1997 | A |
5675473 | McDunn et al. | Oct 1997 | A |
5692558 | Hamilton et al. | Dec 1997 | A |
5696405 | Weld | Dec 1997 | A |
5727618 | Mundinger et al. | Mar 1998 | A |
5740013 | Roesner et al. | Apr 1998 | A |
5763951 | Hamilton et al. | Jun 1998 | A |
5768104 | Salmonson et al. | Jun 1998 | A |
5774779 | Tuchinskiy | Jun 1998 | A |
5800690 | Chow et al. | Sep 1998 | A |
5801442 | Hamilton et al. | Sep 1998 | A |
5810077 | Nakamura et al. | Sep 1998 | A |
5835345 | Staskus et al. | Nov 1998 | A |
5858188 | Soane et al. | Jan 1999 | A |
5863708 | Zanzucchi et al. | Jan 1999 | A |
5870823 | Bezama et al. | Feb 1999 | A |
5874795 | Sakamoto | Feb 1999 | A |
5880524 | Xie | Mar 1999 | A |
5901037 | Hamilton et al. | May 1999 | A |
5921087 | Bhatia et al. | Jul 1999 | A |
5936192 | Tauchi | Aug 1999 | A |
5945217 | Hanrahan | Aug 1999 | A |
5964092 | Tozuka et al. | Oct 1999 | A |
5965001 | Chow et al. | Oct 1999 | A |
5978220 | Frey et al. | Nov 1999 | A |
5993750 | Ghosh et al. | Nov 1999 | A |
5997713 | Beetz, Jr. et al. | Dec 1999 | A |
5998240 | Hamilton et al. | Dec 1999 | A |
6007309 | Hartley | Dec 1999 | A |
6019165 | Batchelder | Feb 2000 | A |
6034872 | Chrysler et al. | Mar 2000 | A |
6039114 | Becker et al. | Mar 2000 | A |
6054034 | Soane et al. | Apr 2000 | A |
6068752 | Dubrow et al. | May 2000 | A |
6090251 | Sundberg et al. | Jul 2000 | A |
6096656 | Matzke et al. | Aug 2000 | A |
6100541 | Nagle et al. | Aug 2000 | A |
6101715 | Fuesser et al. | Aug 2000 | A |
6119729 | Oberholzer et al. | Sep 2000 | A |
6126723 | Drost et al. | Oct 2000 | A |
6129145 | Yamamoto et al. | Oct 2000 | A |
6131650 | North et al. | Oct 2000 | A |
6140860 | Sandhu et al. | Oct 2000 | A |
6146103 | Lee et al. | Nov 2000 | A |
6159353 | West et al. | Dec 2000 | A |
6167948 | Thomas | Jan 2001 | B1 |
6174675 | Chow et al. | Jan 2001 | B1 |
6176962 | Soane et al. | Jan 2001 | B1 |
6186660 | Kopf-Sill et al. | Feb 2001 | B1 |
6196307 | Ozmat | Mar 2001 | B1 |
6206022 | Tsai et al. | Mar 2001 | B1 |
6210986 | Arnold et al. | Apr 2001 | B1 |
6216343 | Leland et al. | Apr 2001 | B1 |
6221226 | Kopf-Sill | Apr 2001 | B1 |
6234240 | Cheon | May 2001 | B1 |
6238538 | Parce et al. | May 2001 | B1 |
6253832 | Hallefalt | Jul 2001 | B1 |
6253835 | Chu et al. | Jul 2001 | B1 |
6257320 | Wargo | Jul 2001 | B1 |
6301109 | Chu et al. | Oct 2001 | B1 |
6313992 | Hildebrandt | Nov 2001 | B1 |
6317326 | Vogel et al. | Nov 2001 | B1 |
6321791 | Chow | Nov 2001 | B1 |
6322753 | Lindberg et al. | Nov 2001 | B1 |
6324058 | Hsiao | Nov 2001 | B1 |
6330907 | Ogushi et al. | Dec 2001 | B1 |
6336497 | Lin | Jan 2002 | B1 |
6337794 | Agonafer et al. | Jan 2002 | B1 |
6351384 | Daikoku et al. | Feb 2002 | B1 |
6366462 | Chu et al. | Apr 2002 | B1 |
6366467 | Patel et al. | Apr 2002 | B1 |
6367544 | Calaman | Apr 2002 | B1 |
6388317 | Reese | May 2002 | B1 |
6397932 | Calaman et al. | Jun 2002 | B1 |
6400012 | Miller et al. | Jun 2002 | B1 |
6406605 | Moles | Jun 2002 | B1 |
6415860 | Kelly et al. | Jul 2002 | B1 |
6417060 | Tavkhelidze et al. | Jul 2002 | B1 |
6424531 | Bhatti et al. | Jul 2002 | B1 |
6431260 | Agonafer et al. | Aug 2002 | B1 |
6437981 | Newton et al. | Aug 2002 | B1 |
6438984 | Novotny et al. | Aug 2002 | B1 |
6443222 | Yun et al. | Sep 2002 | B1 |
6444461 | Knapp et al. | Sep 2002 | B1 |
6457515 | Vafai et al. | Oct 2002 | B1 |
6459581 | Newton et al. | Oct 2002 | B1 |
6466442 | Lin | Oct 2002 | B1 |
6477045 | Wang | Nov 2002 | B1 |
6492200 | Park et al. | Dec 2002 | B1 |
6508301 | Marsala | Jan 2003 | B1 |
6519151 | Chu et al. | Feb 2003 | B1 |
6533029 | Phillips | Mar 2003 | B1 |
6536516 | Davies et al. | Mar 2003 | B1 |
6537437 | Galambos et al. | Mar 2003 | B1 |
6543521 | Sato et al. | Apr 2003 | B1 |
6553253 | Chang | Apr 2003 | B1 |
6578626 | Calaman et al. | Jun 2003 | B1 |
6581388 | Novotny et al. | Jun 2003 | B1 |
6587343 | Novotny et al. | Jul 2003 | B1 |
6588498 | Reysin et al. | Jul 2003 | B1 |
6591625 | Simon | Jul 2003 | B1 |
6600220 | Barber et al. | Jul 2003 | B1 |
6601643 | Cho et al. | Aug 2003 | B1 |
6606251 | Kenny, Jr. et al. | Aug 2003 | B1 |
6609560 | Cho et al. | Aug 2003 | B1 |
6632655 | Mehta et al. | Oct 2003 | B1 |
6632719 | DeBoer et al. | Oct 2003 | B1 |
6651735 | Cho et al. | Nov 2003 | B1 |
6729383 | Cannell et al. | May 2004 | B1 |
6743664 | Liang et al. | Jun 2004 | B1 |
20010016985 | Insley et al. | Aug 2001 | A1 |
20010024820 | Mastromatteo et al. | Sep 2001 | A1 |
20010045270 | Bhatti | Nov 2001 | A1 |
20010046703 | Burns et al. | Nov 2001 | A1 |
20020075645 | Kitano et al. | Jun 2002 | A1 |
20020121105 | McCarthy, Jr. et al. | Sep 2002 | A1 |
20030062149 | Goodson et al. | Apr 2003 | A1 |
20030121274 | Wightman | Jul 2003 | A1 |
20030213580 | Philpott et al. | Nov 2003 | A1 |
20040040695 | Chesser et al. | Mar 2004 | A1 |
20040052049 | Wu et al. | Mar 2004 | A1 |
20040089008 | Tilton et al. | May 2004 | A1 |
20040112571 | Kenny et al. | Jun 2004 | A1 |
20040125561 | Gwin et al. | Jul 2004 | A1 |
20040160741 | Moss et al. | Aug 2004 | A1 |
20040188069 | Tomioka et al. | Sep 2004 | A1 |
20050168949 | Tilton et al. | Aug 2005 | A1 |
Number | Date | Country |
---|---|---|
197 10 716 | Sep 1998 | DE |
1-256775 | Oct 1989 | JP |
10-99592 | Apr 1998 | JP |
2001-326311 | Nov 2001 | JP |
WO 0125711 | Apr 2001 | WO |
Number | Date | Country | |
---|---|---|---|
20040182548 A1 | Sep 2004 | US |
Number | Date | Country | |
---|---|---|---|
60455729 | Mar 2003 | US |