Claims
- 1. A laser source for generating at least one infared wavelength, comprising in combination:a pump source having peak density that overcomes a threshold of a selected laser transition; means for coupling radiation from the pump source into a laser cavity; a gain material of homium-doped flouride with the laser cavity having a dopant concentration greater than 2 atomic percent holmium; and optic means for generating at least one wavelength between approximately 1.4 μm and approximately 4 μm from said source.
- 2. The laser source of claim 1, wherein the optic means is configured to generate at least two wavelengths.
- 3. The laser source of claim 2, wherein the two wavelengths include:approximately 1.4 μm and approximately 3.9 μm.
- 4. The laser source of claim 2, wherein the two wavelengths include:approximately 2.9 μm and approximately 3.9 μm.
- 5. The laser source of claim 1, wherein the dopant concentration includes:greater than 2 up to approximately 10 atomic percent holmium.
- 6. The laser source of claim 1, wherein the dopant concentration includes:approximately 10 to approximately 20 atomic percent holmium.
- 7. The laser source of claim 1, wherein the dopant concentration includes:greater than approximately 20 atomic percent holmium.
- 8. The laser source of claim 1, wherein the pump source includes:a narrow band source emitting at approximately 532 nm.
- 9. The laser source of claim 1, wherein the pump source is:a frequency-doubled Nd:YAG laser.
- 10. The laser source of claim 1, wherein the pump source includes:a narrow band source emitting at approximately 890 nm.
- 11. The laser source of claim 1, wherein the pump source is: a Cr-doped laser.
- 12. The laser source of claim 1, wherein the pump source is: a Ti doped laser.
- 13. The laser source of claim 1, wherein the pump source is chosen from one of:a diode laser and a diode laser array.
- 14. The laser source of claim 1, wherein the pump source includes:a narrow band source emitting at approximately 1.2 microns.
- 15. The laser source of claim 1, wherein the pump source includes:a fiber laser.
- 16. The laser source of claim 1, wherein the optic means is configured to generate a wavelength of: approximately 2.9 μm.
- 17. The laser source of claim 1, wherein the optic means generates a wavelength of: approximately 3.9 μm.
- 18. The laser source of claim 1, wherein the pump pulse duration provides a switch of said laser transition.
- 19. The laser source of claim 1, wherein the pump pulse duration provides operation at high energy densities.
- 20. The gain material of claim 1, wherein the holmium-doped flouride is selected from one of:Ho;BYF, Ho:YLF, HoNaYF and Ho:KYF.
- 21. The method of claim 20, wherein the pump source in step(a) a Ti doped laser.
- 22. The method of claim 20, wherein the pump source in step(a) is chosen from one of:a diode laser and a diode laser array.
- 23. The method of claim 20, wherein the pump source in step(a) includes:emitting at approximately 1.2 microns.
- 24. The method of claim 20, wherein the pump source in step(a) is a fiber laser.
- 25. The method of claim 20, wherein the generating step(c) includes:a wavelength of approximately 2.9 μm.
- 26. The method of claim 20, wherein the generating step(c) includes:a wavelength of approximately 1.4 μm .
- 27. The method of generating at least one infrared wavelength form a laser source, comprising the steps of:(a) pumping a gain material of holmium(Ho3+) doped flouride with a pump source having a wavelength corresponding to a resonance of the gain material, the pump source having a peak power density that overcomes a threshold of selected laser transition, the holmium doped flouride having a dopant concentration greater than approximately 2 percent by weight of holmium; (b) adjusting the concentration of the holmium to maximize absorption of the pump source wavelength; and (c) generating at least one wavelength between approximately 1.4μm and approximately 4 μm.
- 28. The method of claim 22, wherein step(c) further includes:generating at least two wavelengths.
- 29. The method of claim 23, wherein the two wavelengths include:approximately 1.4 μm and approximately 3.9 μm.
- 30. The method of claims, wherein the two wavelengths include:approximately 2.9 μm and approximately 3.9 μm.
- 31. The method of claim 22, wherein the Ho dopant concentration in step(a) includes:approximately 2 to approximately 10 percent atomic holmium.
- 32. The method of claim 22, wherein the Ho dopant concentration in step(a) includes:approximately 10 to approximately 20 percent by weight holmium.
- 33. The method of claim 22 wherein the Ho dopant concentration in step(a) includes:greater than approximately 20 percent by weight holmium.
- 34. The method of claim 22, wherein the pump source in step (a) includes:emitting at approximately 532 nm.
- 35. The method of claim 22, wherein the pump source in step(a) is a frequency-doubled Nd: YAG laser.
- 36. The method of claim 22 wherein the pump source in step (a) includes:emitting at approximately 890 nm.
- 37. The method of claim 22, wherein the pump source in step(a) is a Cr-doped laser.
- 38. The method of claim 20, wherein the generating step(c) includes:a wavelength of approximately 3.9 μm.
- 39. The method of claims 33, wherein the pulse duration provides a gain switch of said laser transition.
- 40. The method of claim 33, wherein the pump pulse duration provides operation at high energy densities.
- 41. The method of claim 21, wherein the holmium-doped flouride is selected from one of:Ho:BYF, Ho:YLF, Ho-NaYF and Ho:KYF.
Parent Case Info
This invention claims priority based on U.S. Provisional Application Ser. No. 60/135,977 filed May 26, 1999
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Provisional Applications (1)
|
Number |
Date |
Country |
|
60/135977 |
May 1999 |
US |