Multilayer electronic device and the production method

Abstract

A production method of a multilayer electronic device having an element body configured by alternately stacked dielectric layers and internal electrode layers: wherein a particle diameter α of conductive particles and a particle diameter β of co-material particles satisfies a relationship of α/β=0.8 to 8.0, and an adding quantity of the co-material particles to the conductive paste is larger than 30 wt % and smaller than 65 wt %.

Description

BRIEF DESCRIPTION OF DRAWINGS

These and other objects and features of the present invention will become clearer from the following description of the preferred embodiments given with reference to the attached drawings, in which:

FIG. 1 is a sectional view of a multilayer ceramic capacitor according to an embodiment of the present invention; and

FIG. 2 is a schematic view of key parts for explaining electrode breaking.

Claims

1. A production method of a multilayer electronic device configured that dielectric layers formed by using dielectric paste and internal electrode layers formed by using conductive paste are alternately stacked: whereinsaid conductive paste is added with conductive particles and co-material particles;when assuming that an average particle diameter of the conductive particles is α and an average particle diameter of the co-material particles is β in said conductive paste, α/β is 0.8 to 8.0; andsaid co-material particles are added by a ratio of larger than 30 wt % and smaller than 65 wt % with respect to 100 parts by weight of said conductive particles.

2. The production method of a multilayer electronic device as set forth in claim 1, wherein Ni particles are used as said conductive particles.

3. The production method of a multilayer electronic device as set forth in claim 1, wherein BaTiO3 particles are used as said co-material particles.

4. The production method of a multilayer electronic device as set forth in claim 1, wherein a ratio of said co-material particle is 40 wt % or larger to 60 wt % or smaller.

5. The production method of a multilayer electronic device as set forth in claim 1, wherein α/β is 1.0 to 5.0.

6. A multilayer electronic device produced by the production method as set forth in claim 1.

7. The multilayer electronic device as set forth in claim 6, wherein a length is 2.0 mm or longer and a width is 1.2 mm or longer.

8. The multilayer electronic device as set forth in claim 6, wherein the number of stacked layers of said dielectric layers is 100 or larger.

9. The multilayer electronic device as set forth in claim 6, wherein an electrode coverage rate of the outermost layer of said internal electrode layers in the stacking direction is 60% or higher.

10. The production method of a multilayer electronic device as set forth in claim 2, wherein BaTiO3 particles are used as said co-material particles.

11. The production method of a multilayer electronic device as set forth in claim 2, wherein a ratio of said co-material particle is 40 wt % or larger to 60 wt % or smaller.

12. The production method of a multilayer electronic device as set forth in claim 2, wherein α/β is 1.0 to 5.0.

13. A multilayer electronic device produced by the production method as set forth in claim 2.

14. The multilayer electronic device as set forth in claim 13, wherein a length is 2.0 mm or longer and a width is 1.2 mm or longer.

15. The multilayer electronic device as set forth in claim 13, wherein the number of stacked layers of said dielectric layers is 100 or larger.

16. The multilayer electronic device as set forth in claim 13, wherein an electrode coverage rate of the outermost layer of said internal electrode layers in the stacking direction is 60% or higher.