F. Masuoka, M. Asano, H. Iwahashi, T. Komuro and S. Tanaka, "A New Flash E.sup.2 PROM Cell Using Triple Polysilicon Technology", pp. 464-467, Integrated Circuit Div. Toshiba Corp., 1984 IDEM. |
S. Mukherjee, T. Chang, R. Pang, M. Knecht, and D. Hu, "A Single Transistor EEPROM Cell and Its Implementation in a 512K CMOS EEPROM", pp. 616`619, Exel Microelectronics, IEDM 1985. |
Christoph Bleiker and Hans Melchior, "A Four-State EEPROM Using Floating-Gate Memory Cells", Paper 8.13, pp. 357-360. Reprinted from IEEE Journal of Solid-State Circuits, vol. SC-22, No. 3, pp. 460-463, Jun. 1987. |