The present invention relates to a nanoimprint mold, a method of forming a nanopattern, and a resin-molded product obtained by the nanopattern-forming method.
It has long been considered that the only way to achieve microfabrication with satisfactory precision and mass productivity was by optical lithography. However, because optical lithography employs propagated light, it is affected by the diffraction limit. For example, in an exposure apparatus with a light source emitting g-line (436 nm) or i-line (365 nm), the maximum resolution has been 0.3 μm to 0.5 μm. To increase the resolution, the wavelength of the exposure light source must be made shorter. For this purpose, research into excimer laser steppers employing KrF (248 nm), ArF (193 nm), and F2 (157 nm), for example, with a view to achieving higher densities in LSIs or the like has been conducted. EUV (comprising X rays of several tens of nanometers) is also being researched as a relevant future technology.
Problems of these technical developments include the inability of the conventional glass materials to support optics, such as lenses, as the wavelength becomes shorter, and the resultant need to develop special materials. There is also the need to develop new resist materials to handle various wavelengths. Furthermore, a great amount of investment must be made in equipment and operational cost that is required by newer generations of the optical lithography technology.
Great expectations are being placed on sub-70 nm or sub-50 nm lithography techniques for the future. In this connection, nanoimprinting has been attempted, which is an application of the press technology used for the mass production of the compact discs or the like to the formation of nanostructures. Nanoimprint technology is capable of achieving a resolution that is on the order of 10 nm, and it can be used for forming micropatterns at very low cost.
Typically, in nanoimprint lithography, a mold with a fine pattern formed on the surface of a substrate made of silicon, for example, is prepared, and the mold is then pressed against a polymer film on another substrate at the glass transition temperature or higher. The polymer film is then cooled and allowed to set, whereby the mold pattern is transferred.
Nanoimprint technology can provide advantages over existing semiconductor microfabrication technologies in that: (1) very fine, highly integrated patterns can be efficiently transferred; (2) the cost of the necessary equipment is low; (3) expensive resists are not required; and (4) complex shapes can be flexibly handled.
As a new material, carbon nanotube is known to be chemically and mechanically strong, and much attention is being focused on it as a material for an electron source. A carbon nanotube consists of one or a plurality of cylinders in a nested structure of graphite carbon atom planes with a thickness of several atoms. It is a very small tube-like substance with an external diameter that is on the nanometer order, and has a length that is on the micrometer order. Carbon nanotubes consisting of a single cylinder are referred to as single-wall nanotubes, and those consisting of a plurality of cylinders in a nested structure are referred to as multiwall nanotubes. Methods for the formation of carbon nanotubes include the arc-discharge method, the CVD method, and the laser abrasion method.
For example, JP Patent Publication (Kokai) No. 2002-234000 A discloses that micropatterns of carbon nanotube film can be easily formed, and that carbon nanotube patterns can be formed with a high level of flatness, with good pattern edge shapes, and with increased reliability in terms of insulation among elements.
In the conventional nanoimprinting technology, the mold and the resin (resist) that are employed have poor releasability, resulting in various problems, such as a decrease in durability of the mold and breakage of the formed pattern. Although attempts have been made to improve the releasability by subjecting the mold to a surface modification treatment, the situation has remained problematic in that the releasability deteriorates after a dozen or so press operations. Further, when a high aspect-ratio pattern is formed, the area of contract between the mold and a resin layer is particularly large, such that sufficient releasability cannot be achieved.
It is therefore an object of the invention to improve the releasability between the mold and the resin during nanoimprinting and to achieve higher mold durability. It is another object of the invention to provide a novel pattern-forming method based on nanoimprint lithography.
The invention is based on the inventors' realization that the aforementioned objects can be achieved by forming a specific nano-sized structure on a nanoimprint mold. Particularly, it was found that carbon nanowalls (CNWs) are suitable as such nano-sized structures. The carbon nanowall according to the present application is a two-dimensional carbon nanostructure. A typical example has a structure in which walls rise upward in substantially uniform directions from the surface of a substrate. Fullerene (such as C60) can be considered to be a zero-dimensional carbon nanostructure, while carbon nanotubes can be considered to be one-dimensional carbon nanostructures. Although carbon nanofrakes refer to a group of flat fragments with two dimensionalities that are similar to carbon nanowalls, they are more like rose petals and are not mutually connected. The carbon nanoflakes, which are carbon nanostructures, have poorer directionality with respect to the substrate than carbon nanowalls. Thus, carbon nanowalls are carbon nanostructures with totally different characteristics from those of fullerenes, carbon nanotubes, carbon nanohorns, and carbon nanoflakes. Methods of manufacturing carbon nanowalls, for example, will be described later.
In one aspect, the invention provides a nanoimprint mold for resin molding that comprises a carbon nanowall layer on the surface thereof. The mold for resin molding may comprise a substrate on the surface of which a carbon nanowall layer is formed. Alternatively, the mold for resin molding may comprise a transferred product formed on the surface thereof, which transferred product having been transferred using a carbon nanowall layer on a substrate as a mold. Further alternatively, the mold for resin molding may comprise a transferred product formed on the surface thereof, which transferred product having been transferred using another transferred product as a mold, the another transferred product having been transferred using a carbon nanowall layer on a substrate as another mold.
In accordance with the invention, the nanoimprint mold may comprise a metal layer formed on a carbon nanowall layer or a transferred product by electroless plating or electrolytic plating, thereby improving the durability and releasability of the mold. Instead of electroless plating or electrolytic plating, a metal layer can be formed on the carbon nanowall layer or the transferred product using a supercritical fluid. Preferably, the metal layer formed on the carbon nanowall layer or the transferred product by electroless plating or electrolytic plating or by means of supercritical fluid is nitrided or carburized (carbonized).
The carbon nanowall formed on the nanoimprint mold generally has a height of 10 nm to several micrometers and a width of several to several hundreds of nanometers.
In another aspect, the invention provides methods of forming a nanopattern using the aforementioned nanoimprint mold. Specifically, one method comprises growing a carbon nanowall layer on the surface of a mold for resin molding, pressing a resin against the mold on which the carbon nanowall layer is formed, and releasing a resin-molded product from the mold. Another method comprises pressing a resin against a mold for resin molding comprising a transferred product on the surface thereof, the transferred product being transferred using a carbon nanowall layer provided on a substrate as a mold, and releasing a resin-molded product from the mold. Yet another method comprises pressing a resin against a mold for resin molding comprising a transferred product on the surface thereof, said transferred product being transferred using, as a mold, another transferred product that has been transferred using a carbon nanowall layer provided on a substrate as a mold, and releasing a resin-molded product from the mold.
Preferably, the step of growing a carbon nanowall layer on the surface of a mold for resin molding involves plasma CVD. Plasma CVD may be performed at atmospheric pressure so that mass productivity can be improved.
Yet another method of forming a nanopattern comprise growing a carbon nanowall layer on a substrate, releasing the carbon nanowall layer that has been grown from the substrate and then affixing the carbon nanowall layer to the surface of a mold for resin molding, pressing a resin against the mold with the carbon nanowall layer affixed thereto, and releasing a resin-molded product from the mold.
In yet another aspect, the invention provides a resin-molded product with a micropattern transferred to the surface thereof by the method of forming a nanopattern according to any one of the aforementioned methods. Preferably, the micropattern comprises a micro-pillar structure in which submicron-order patterns are arranged.
By thus providing the surface of the mold for resin molding with a carbon nanowall layer, a microstructure of the submicron order can be imprinted on the surface of a resin-molded product. The nanoimprint mold of the invention has superior releasability and durability.
Further, because the resin-molded product molded in accordance with the invention has irregularities of the submicron order that are due to the surface structure of the mold, the resin-molded product has a very large surface area. As a result, the mold has greater adhesion with a paint or adhesive agent and therefore provides an anti-peeling effect, without any change in its exterior look.
First, a method for manufacturing a carbon nanowall (CNW) is described.
The invention will be described in detail below with reference to the drawings.
The type of resin used with the method of forming a nanopattern according to the invention is not particularly limited, and any material that can be softened and formed at a predetermined transition temperature (Tg) or above can be used. Specifically, examples include: thermoplastic resins, such as polyethylene, polypropylene, polyvinyl alcohol, polyvinylidene chloride, polyethylene terephthalate, polyvinyl chloride, polystyrene, ABS resin, AS resin, acryl resin, polyamide, polyacetal, polybutylene terephthalate, polycarbonate, modified polyphenylene ether, polyphenylene sulfide, polyether ether ketone, liquid crystalline polymer, fluorine resin, polyarete, polysulfone, polyether sulfone, polyamide-imide, polyether imide, and thermoplastic polyimide; thermosetting resins, such as phenol resin, melamine resin, urea resin, epoxy resin, unsaturated polyester resin, alkyd resin, silicone resin, diallyphthalate resin, polyamidebismaleimide, and polybisamide triazole; and a mixture of two or more of the aforementioned materials.
While the invention is described hereafter with reference to specific embodiments thereof, it should be apparent to those skilled in the art that the invention is not limited by those embodiments.
A mold structure with a CNW-patterned mold was prepared. In the present embodiment, the convex portions of the CNW correspond to the concave portions of a molded product. With reference to
In the present embodiment, the white portions of the SEM image of the CNW correspond to the convex portions of the resin-molded product, as shown in the conceptual images in the drawing.
As shown schematically in
In the present embodiment, the white portions of the SEM image of the CNW correspond to the convex portions of the resin-molded product, as shown in the conceptual images in the drawing.
Industrial Applicability
In accordance with the invention, the releasability and durability of a nanoimprint mold can be improved, thereby contributing to the practical application of the next-generation microstructure fabrication technology.
Number | Date | Country | Kind |
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2004-262946 | Sep 2004 | JP | national |
2005-253441 | Sep 2005 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP05/17000 | 9/8/2005 | WO | 3/7/2007 |