The present disclosure relates to nanofabrication. More particularly, the present disclosure relates to the fabrication of nanoparticles.
Nanoparticles are often used in nanoengineering for diverse applications, such as being used as an attachment point for other molecules or to interact with electromagnetic radiation. A nanoparticle is generally defined as a particle between 0.1 and 100 nanometers (nm) in size.
Nanoparticles can be composed of various materials, depending on the application. Commonly used nanoparticle materials include metals and semiconductor particles, such as quantum dots. Such particles typically have somewhat spherical or crystalline shapes.
The use of nanoparticles smaller than about 20 nm in devices, such as sensors for DNA sequencing, is often limited by current methods of fabricating nanoparticles. Even state of the art device fabrication techniques such as extreme Ultra-Violet (UV) lithography, or photolithography with phase shifting masks, and multiple patterning, will only produce nanoparticles of about 20 nm. In addition, nanoparticles smaller than 20 nm that are formed by methods such as by precipitating crystals in a solution may have a variety of different shapes. These nanoparticles may not be compatible with being placed on a surface or substrate in forming a device. The nanoparticle may then undesirably move if it is not energetically stable when placed on the surface or substrate. In addition to the need for smaller nanoparticles, there is also a need for being able to consistently fabricate nanoparticles of a defined shape that can be precisely and stably positioned on a surface or a substrate.
The features and advantages of the embodiments of the present disclosure will become more apparent from the detailed description set forth below when taken in conjunction with the drawings. The drawings and the associated descriptions are provided to illustrate embodiments of the disclosure and not to limit the scope of what is claimed.
In the following detailed description, numerous specific details are set forth to provide a full understanding of the present disclosure. It will be apparent, however, to one of ordinary skill in the art that the various embodiments disclosed may be practiced without some of these specific details. In other instances, well-known structures and techniques have not been shown in detail to avoid unnecessarily obscuring the various embodiments.
Substance 104 can be deposited as a solid-phase thin layer at a particular thickness on substrate 102 centered about location 105 using a deposition process such as sputtering or vapor deposition. Substance 104 may be deposited onto substrate 102 so that substance 104 has a round shape (e.g., disk, oval, bead), a rectangular shape (e.g., square, rectangle), or an irregular shape, as in the example embodiments of
As shown in
The heating of substance 104 can be accomplished by placing substrate 102 and substance 104 in an oven. In some implementations, the heating can be part of an annealing process where substance 104 is heated to a particular temperature for a predetermined period of time and then cooled over another predetermined period of time. Heating could also be combined with or replaced by other annealing processes that allow material systems to transform to lower energy configurations. Such other annealing methods can include exposure to pressure, exposure to ultra-sound, exposure to mechanical vibration, exposure to magnetic fields, exposure to electric fields, exposure to voltage, exposure to light, UV light, or other electromagnetic radiation, or passage of electric current through a system.
Substance 104 is heated in such a way so that it beads up on substrate 102 due to cohesive forces within substance 104 being greater than adhesive forces between substrate 102 and substance 104. As a result, substance 104 is formed into nanoparticle 104′ having a spherical or ball shape centered at or near the same location 105 about which substance 104 was initially located. The resulting spherical shape shown in
Nanoparticle 104′ also has a size dimension or resolution d that is smaller than the starting dimension or resolution D. In some implementations, the smaller size dimension d can be, for example, between 1 to 20 nm. In this regard, the smaller size dimension may or may not be smaller than a size limit of certain state of the art pattern generation processes.
The cohesive forces that cause substance 104 to contract or bead up include attractive intermolecular forces within substance 104, such as attractive Van der Waals forces. On the other hand, adhesive forces between substance 104 and substrate 102 include attractive intermolecular forces between substance 104 and substrate 102, such as electrostatic or mechanical forces. There are also relatively smaller adhesive forces between substance 104 and ambient medium 103 that can affect the ability of substance 104 to bead up, or the shape of the bead. In this regard, the adhesive forces between substance 104 and ambient medium 103 can be advantageously used to control the beading up of substance 104.
As substance 104 is heated, it becomes mobile and transitions to a configuration of minimal energy or a lower energy state. Under appropriate conditions, this will cause substance 104 to contract and bead up into a shape with smaller dimension d containing the same or nearly the same volume of material. The shape of nanoparticle 104′ is generally defined by the bulk and surface interaction energies of the materials used for substance 104, substrate 102, and ambient medium 103. In the example of
The temperature range at which substance 104 is heated is generally well below the melting point of substance 104. For example, in an implementation where substance 104 is gold, substrate 102 is chromium, and ambient medium 103 is air, substance 104 and substrate 102 can be heated to within a range of 390° C. to 410° C. in ambient medium 103 so that substance 104 beads up into a spherical shape over the course of approximately 50 minutes to an hour and ten minutes. In this temperature range, the gold has not reached its melting point of 1,064° C., but the cohesive forces of the gold are able to cause substance 104 to bead up.
Depending on the application, other example implementations can include a substance material such as silver, copper, aluminum, palladium, or another metal on a substrate material including chromium, platinum, palladium, titanium, silicon, or a doped silicon. Other combinations of materials for substance 104 and substrate 102 are possible. In this regard, substrate 102 may include layers of different materials.
Ambient medium 103 can include, for example, a vacuum, argon gas, nitrogen gas, air, or an oil. In other implementations, ambient medium 103 could be a solid material, such as a polymer, metal, semiconductor, or an oxide of these. The ambient medium may also be removable so that it need not be present for subsequent system processing steps or in the final finished device being fabricated. Solid mediums could be removed by the use of a solvent or selective etching process. To facilitate beading up, ambient medium 103 can be selected so that the surface tension of substance 104 at the interface with ambient medium 103 is less than at the interface with substrate 102.
Although the example of
As noted above, the predetermined high temperature in the beading up process is typically below the melting temperature for substance 104. In addition, the high temperature and the time for which substance 104 and other components such as substrate 102 are heated may also depend on preventing damage or alteration due to heating. For example, depending on the material used for substrate 102 or substance 104, heating above the predetermined high temperature can cause an increased risk of unwanted oxidation, corrosion, or structural damage to substance 104 or substrate 102. The application for which substance 104 and substrate 102 are to be used (e.g., antenna or current sensor) can factor into the determination of a heating temperature and heating time so that substance 104 or substrate 102 are not altered to become less useful for their intended purpose.
The size reduction from the patterning scale D to the bead scale d can be quantified assuming that the initial and final volumes of substance 104 and nanoparticle 104′ are the same with:
V(D)=v(d) Equation 1
Where, V is the volume of substance 104, and v is the volume of nanoparticle 104′. For the sake of illustration, the size reduction can be shown for an example where substance 104 is deposited as a disk with diameter D and thickness T, and nanoparticle 104′ is a high surface tension example of a sphere of diameter d. Equating volumes provides:
(π/4)D2T=(τ/6)d3 Equation 2
or
d=r D Equation 3
where the reduction factor, r, is
r=(3T/2D)1/3 Equation 4
As an example, for a high resolution patterning process such as UV-lithography or e-beam lithography, the smallest sized disk that can be patterned may have diameter D of approximately 14 nm. The nominal thickness T, could be taken as low as a single atomic monolayer, with T of approximately 0.2 nm. Using Equation 4, the reduction factor would be r=0.28, or slightly over a 3.5-fold reduction in size below the 14 nm patterning limit, for a final diameter of approximately 3.92 nm. This reduction from a 14 nm size to a 3.92 nm size is a significant reduction in the context of current nanofabrication methods.
As shown in the top view of
In addition, the sizes, shapes, and locations of multiple nanoparticles, as in an array of nanoparticles, become highly reproducible. This advantage is especially useful in nanoengineering where the scale of a finished device is at the nanometer level and relatively small variations of components can have a greater impact on the operation of the finished device.
In some implementations, the combination of the substance material and the substrate material is selected so that the substrate beads up into a predetermined shape or beads up with a particular type of contact angle (e.g., acute or obtuse) between the substance and the substrate. For example, the substance material and the substrate material can be selected so that the adhesive forces between the substance and substrate are relatively stronger so the finished nanoparticle has more of a dome shape instead of a lenticular shape or a spherical shape.
A material for the ambient medium in which the substance will be heated can also be selected in block 202 to help facilitate a particular shape for the finished nanoparticle. In some implementations, the ambient medium is selected so that the adhesive forces between the substance and the ambient medium are negligible when compared to the adhesive forces between the substance and the substrate.
As noted above, some possible combinations of substance material and substrate material can include, for example, a metal such as gold, silver, copper, aluminum, or palladium as a substance material and at least one of chromium, platinum, palladium, titanium, silicon, or doped silicon as a substrate material. Different combinations of substrate and substance materials can result in different characteristics of the finished nanoparticle. In this regard, the selection of the substance and substrate materials can be based on design considerations for a finished device that will include the nanoparticle. For example, the finished nanoparticle may have a predetermined shape and conductivity such that the selection of the substance material for conductivity informs the selection of the substrate material to obtain the predetermined shape.
In block 204, the substrate is provided using the selected substrate material. In some implementations, a preprocessing of the substrate (e.g., a Complementary Metal-Oxide Semiconductor (CMOS) process) may take place in block 204 to form the substrate in a particular shape or provide particular layers of different materials in the substrate. In one example, a substrate layer may be patterned or etched to form the substrate into electrodes or an antenna.
In block 206, the selected substance is deposited on the substrate. In some implementations, the depositing can include a pattern generation process such as electron beam lithography, photolithography, UV lithography, extreme UV lithography, X-ray lithography, nano-imprint lithography, ion beam milling, or a CMOS lithography process that can be deployed at a CMOS fabrication facility used in manufacturing CMOS devices. The pattern generation process may also make use of other techniques such as short wavelength sources, high numerical aperture immersion, phase shifting masks, and/or multiple patterning to produce high-resolution nanoscale features.
For example, a resist material such as polymethyl methacrylate (PMMA) can be layered on the substrate in block 206 and holes or spots can be etched or patterned in the resist for holding the substance. After the substance is deposited into the holes or spots, the resist layer can be removed, such as by using a solvent in a “lift-off” process, to leave portions of the substance on the substrate that will form nanoparticles. In other implementations, the substance may be deposited directly on the substrate without using a resist or a pattern generation process. The substance can be deposited on the substrate using, for example, sputtering, chemical vapor deposition, or other deposition techniques known in the art.
In block 208, at least one portion of the deposited substance is heated or annealed so that the portion or portions bead up to form one or more nanoparticles on the substrate. The beading up can result due to cohesive forces of the portion or portions being greater than adhesive forces between the substrate and the portion or portions. In this regard, substance 104 becomes mobile and transitions to a configuration of minimal energy or a lower energy state. The amount of the substance and surface tensions between the substance and the materials contacting the substance (i.e., the substrate and the ambient medium) can determine how the substance beads up with respect to the changes in the shape of the substance and how long it takes for the substance to bead up at a particular temperature.
As discussed above, the specific temperature at which the substance is heated and the duration of heating can depend on the substance being heated and the risk of unwanted changes to the substance or other components being heated such as the substrate. Heating temperature or duration may also consider the ambient medium surrounding the substance during heating to prevent unwanted changes in the ambient medium. The examples of
In implementations where the substance is annealed, cooling of the substance can be controlled to achieve a finished quality of the nanoparticle, such as a particular hardness. In another example, the substrate and the substance are annealed so as to change electrical properties of the substrate, such as increasing the electrical conductivity, or increasing the voltage at which the system would break down or develop a short circuit.
As best shown in the top views of
In addition, the finished shape of nanoparticle 108′ generally does not depend on the initial shape of the deposited substance 108. In other words, the irregular shape of substance 108 when it is initially deposited of substrate 102 does not affect the final spherical shape of nanoparticle 108′. This advantage can allow for less control or a greater tolerance of the shape of substance 108 when it is initially deposited on substrate 102. In addition, a more consistent or repeatable predetermined shape of finished nanoparticle 108′ is achieved by beading up substance 108 as described above.
As shown in
The size reduction for such a porous, incomplete, or sub-monolayer of substance 112 is even more than the size reduction for a thicker layer of substance 112. This is due to the overall volume of material in such a layer being less than the volume of a full layer of substance 112 without gaps, holes, bubbles, or voids. As a result, it is ordinarily possible to achieve an even smaller finished nanoparticle 112′ by depositing substance 112 with a sub-monolayer thickness or with gaps in substance 112 on substrate 106.
For example, using Equations 1 to 4 discussed above with reference to
On the other hand, a different substance heated on a different substrate 122, forms nanoparticle 118′ having a different predetermined dome shape where the contact angle θ between nanoparticle 118′ and substrate 122 is obtuse. The difference in shape for the finished nanoparticles 116′ and 118′ is due to different configurations of the substance when it reaches an equilibrium point between cohesive forces within the substance and adhesive forces surrounding the substance (i.e., at the substrate and at the ambient medium). The final shape can also be viewed as the configuration of the substance that provides equilibrium between the substance's surface tensions at the substrate interface and at the ambient medium interface.
In other examples, the difference in the final shape of the nanoparticle can be based on the temperature to which the substance is heated. The combination of the substance material and the substrate material, and/or the temperature to which the substance is heated can be selected to obtain a desired contact angle within a predetermined range of angles between the substance and the substrate.
The use of nanoparticles 127 on electrodes 123 and 125 in
The array of
In some implementations, the combination of the substance material and the substrate material is selected so that portions of the substrate bead up into nanoparticles each having a predetermined shape or with a particular type of contact angle (e.g., acute or obtuse) between the portion and the substrate. For example, the substance material and the substrate material can be selected so that the adhesive forces are relatively stronger so the finished nanoparticle shape has more of a dome shape instead of a lenticular shape or a spherical shape.
A material for the ambient medium in which the substance will be heated can also be selected in block 302 to help facilitate a particular shape for the finished nanoparticles. In some implementations, the ambient medium is selected so that the adhesive forces between the substance and the ambient medium are negligible when compared to the adhesive forces between the substance and the substrate. One example can include an implementation where the ambient medium is a vacuum, as produced by the use of vacuum pumping systems available on materials processing equipment
As noted above, some possible combinations of substance material and substrate material can include, for example, a metal such as gold, silver, copper, aluminum, or palladium as a substance material and at least one of a chromium, platinum, palladium, titanium, silicon, and doped silicon substrate material. Different combinations of substrate and substance materials can result in different characteristics of the finished nanoparticle. The selection of the substance and substrate materials can be based on design considerations for a finished device that will include the nanoparticles.
In block 304, one or more substrates are provided using the selected substrate material. In some implementations, an initial processing of the substrate or substrates (e.g., via a CMOS process) may take place in block 304 to form the substrate or substrates in a particular shape or with particular layers of different materials. In one example, an initial substrate layer may be patterned or etched to form multiple substrates as electrodes or antennas.
In block 306, the substance is deposited on one or more substrates. The substance can be deposited on the substrate or substrates using, for example, sputtering, chemical vapor deposition, or other deposition techniques known in the art.
In some implementations, the depositing can include a pattern generation process such as electron beam lithography, photo lithography, UV lithography, extreme UV lithography, X-ray lithography, nano-imprint lithography, ion beam milling, or a CMOS fabrication facility etching process to define multiple portions of the substance. The pattern generation process may also make use of other techniques such as short wavelength sources, high numerical aperture immersion, phase shifting masks, and/or multiple patterning to produce high-resolution nanoscale features.
In block 308, the portions of the substance are heated or annealed so that the portions bead up to form nanoparticles on the substrate. The beading up can result from cohesive forces of the portions being greater than adhesive forces between the substrate and the portions. In this regard, the portions become mobile and transition to a configuration of minimal energy or a lower energy state. The amount of the substance and surface tensions between the substance and the materials contacting the substance (i.e., the substrate and the ambient medium) determines how the substance beads up with respect to the changes in the shape of the portions and how long it takes for the portions to bead up at a particular temperature.
As discussed above, the specific temperature at which the substance is heated and the duration of heating can depend upon the substance being heated and the risk of unwanted changes to the substance or other components that are being heated. Heating temperature or duration may also consider the ambient medium surrounding the substance during heating to prevent unwanted changes in the ambient medium.
In implementations where the substance is annealed, cooling of the substance can be controlled to achieve a finished quality of the nanoparticle, such as a particular hardness. In another example, the one or more substrates and the substance are annealed so as to change electrical properties of the one or more substrates.
In block 310, an optional pattern generation process may be performed on the one or more substrates to define electrodes beneath respective nanoparticles. In one example, the nanoparticles may first be formed on a single substrate and then a pattern generation process may be performed to remove portions of the substrate to define multiple electrodes in the substrate.
After annealing substrate 130 and gold disks 132, the disks 132 form nanoparticles in the form of 18 nm diameter gold beads 132′ that are centered at the same points as the central portions of the original gold disks 132′. The process of
The gold disks are annealed in a vacuum as an ambient medium at a high temperature of 400° C. to yield the array of gold nanoparticles 142. Each of the nanoparticles 142 have a bead shape and a diameter between 4 and 8 nm, thereby achieving diameter reductions of up to approximately 60% relative to the diameter of the initial material deposited. In this regard, the scale of the left image is 200 nm and the scale of the right image is 100 nm. The resulting nanoparticles 142 are super-resolved below the pattern generation limit of 11 nm for e-beam lithography and have a consistent shape and spacing.
In some implementations, the array can be used for different DNA applications depending on the scale of the array. In one example, an array with more than 100 nanoparticles can be used to form electrodes for a molecular electronics sensor array with the capacity for DNA fingerprinting on a DNA sample. In another example, an array with more than 10,000 nanoparticles can be used to form electrodes for a molecular electronics sensor array with the capacity to sequence a DNA fragment including approximately 100 bases. In yet another example, an array with more than 1,000,000 nanoparticles can be used to form electrodes for a molecular electronics sensor array with the capacity to sequence an entire human genome. The nanoparticle fabrication processes described above ordinarily allow for the simultaneous formation of a large number of nanoparticles (e.g., 100 to 1,000,000,000) to efficiently produce large scale arrays. In addition, the foregoing nanoparticle fabrication processes provide a predetermined and consistent shape that can be smaller than a resolution limit of current state of the art patterning processes.
In the example of
The foregoing description of the disclosed example embodiments is provided to enable any person of ordinary skill in the art to make or use the embodiments in the present disclosure. Various modifications to these examples will be readily apparent to those of ordinary skill in the art, and the principles disclosed herein may be applied to other examples without departing from the present disclosure. The described embodiments are to be considered in all respects only as illustrative and not restrictive, and the scope of the disclosure is therefore indicated by the following claims rather than by the foregoing description. All changes which come within the meaning and range of equivalency of the claims are to be embraced within their scope.
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Number | Date | Country | |
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20170240962 A1 | Aug 2017 | US |